DIM80 Search Results

dynex igbt 1200v

Contextual Info: DIM800FSS12-A000 Single Switch IGBT Module Replaces DS5867-1.1 DS5867-2 November 2010 LN27709 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  Non Punch Through Silicon  Isolated Cu Base with Al2O3 Substrates VCES VCE(sat) * (typ) IC (max)

DIM800NSM33-A000

Contextual Info: DIM800NSM33-A000 DIM800NSM33-A000 Single Switch IGBT Module Replaces October 2001, version DS5486-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5486-3.0 May 2002

DIM800DDM17-A000

Abstract: DIM800DDM17
Contextual Info: DIM800DDM17-A000 DIM800DDM17-A000 Dual Switch IGBT Module Replaces May 2001, version DS5433-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5433-3.0 March 2002

DIM800DCM12-A000

Contextual Info: DIM800DCM12-A000 DIM800DCM12-A000 IGBT Chopper Module DS5548-1.2 May 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat) *

dim800ddm12

Abstract: DIM800DDM12-A000
Contextual Info: DIM800DDM12-A000 DIM800DDM12-A000 Dual Switch IGBT Module Preliminary Information DS5528-1.1 March 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS

DIM800DDM12-A000

Abstract: DIM800DDM12-A
Contextual Info: 6 3 Replaces DS5528-4 FEATURES ±0.2 • ±0.2 10µs Short Circuit Withstand 18 6 x O7 Dual Switch IGBT Module DS5528-5 June 2014 LN31688 14 ±0.2 11.5 ±0.2 DIM800DDM12-A000 KEY PARAMETERS 28 ±0.5  High44 Thermal ±0.2 Cycling Capability  Non Punch

DIM800DDM12-A000

Contextual Info: DIM800DDM12-A000 DIM800DDM12-A000 Dual Switch IGBT Module Preliminary Information Replaces issue March 2002, version DS5528-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

DIODE i2t

Contextual Info: DIM800DCM17-A000 DIM800DCM17-A000 IGBT Chopper Module Preliminary Information DS5433-2.0 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS

Contextual Info: DIM800FSS17-A000 DIM800FSS17-A000 Single Switch IGBT Module Preliminary Information Replaces May 2001 version DS5445-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon DS5445-3.0 October 2001 KEY PARAMETERS

mj power transistor

Abstract: PDS5615-2 DIM800NSM33-F000
Contextual Info: DIM800NSM33-F000 DIM800NSM33-F000 Single Switch IGBT Module Replaces April 2004 version, issue PDS5615-2.1 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability

DIM800FSM12-A000

Contextual Info: DIM800FSM12-A000 Single Switch IGBT Module Replaces DS5531-3.1 DS5531-4 November 2010 LN27682 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Non Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)

Contextual Info: Preliminary Information Data DIM800XSM45-TS000 Single Switch IGBT Module Replaces DS6089-2 DS6089-3 April 2013 LN30438 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ)

Contextual Info: Preliminary Information Data DIM800XSM45-TS001 Single Switch IGBT Module Replaces DS6090-2 DS6090-3 April 2013 LN30437 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ)

Contextual Info: Preliminary Information Data DIM800XSM45-TS001 Single Switch IGBT Module Replaces DS6090-2 DS6090-3 April 2013 LN30437 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ)

DIM800NSM33-A000

Abstract: BIPOLAR TRANSISTOR
Contextual Info: DIM800NSM33-A000 DIM800NSM33-A000 Single Switch IGBT Module Replaces June 2002, version DS5486-4.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5486-5.0 February 2003

bi-directional switches IGBT

Abstract: DIM800FSM17-A000 mj 340
Contextual Info: DIM800FSM17-A000 DIM800FSM17-A000 Single Switch IGBT Module Replaces March 2002, version DS5461-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5461-3.1 July 2002

bi-directional switches IGBT

Abstract: DIM800DDM12-A000
Contextual Info: DIM800DDM12-A000 DIM800DDM12-A000 Dual Switch IGBT Module Replaces July 2002, version DS5528-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5528-3.0 March 2003

Contextual Info: DIM800ECM33-F000 IGBT Chopper Module Replaces DS5815-1.1 DS5815-2 May 2011 LN28343 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 

DIM800ECM33-F000

Abstract: DIM800ECM33-F
Contextual Info: DIM800ECM33-F000 IGBT Chopper Module Replaces DS5815-1.2 DS5815-3 September 2012 LN29759 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)

ge traction motor

Abstract: DIM800XSM33-F000
Contextual Info: . DIM800XSM33-F000 Single Switch IGBT Module DS5906-1.1 May 2007 • 10µs Short Circuit Withstand • Non Punch Through Silicon KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) • Isolated AlSiC Baseplate with AlN Substrates * • High Thermal Cycling Capability

DIM800NSM33-A000

Contextual Info: DIM800NSM33-A000 DIM800NSM33-A000 Single Switch IGBT Module Preliminary Information Replaces August 2001, version DS5486-1.4 FEATURES DS5486-2.0 October 2001 KEY PARAMETERS • 10µs Short Circuit Withstand VCES ■ High Thermal Cycling Capability VCE sat

IGBT inverter wind turbine

Abstract: DIM800DDM12-E000 43054
Contextual Info: DIM800DDM12-E000 DIM800DDM12-E000 Dual Switch IGBT Module PDS5749-1.2 April 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) ■ 10µs Short Circuit Withstand

DIM800JSM33-A000

Contextual Info: DIM800JSM33-A000 DIM800JSM33-A000 High Isolation Single Switch IGBT Module Preliminary Information Replaces December 2001, version DS5512-1.1 FEATURES DS5512-2.0 February 2003 KEY PARAMETERS • 10.5kV Isolation VCES ■ 10µs Short Circuit Withstand VCE sat

DIM800FSS12-A000

Abstract: DIM800FSS12-A
Contextual Info: DIM800FSS12-A000 Single Switch IGBT Module Replaces DS5867-2 DS5867-3 July 2014 LN31763 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  Non Punch Through Silicon  Isolated Cu Base with Al2O3 Substrates VCES VCE(sat) * (typ) IC (max) IC(PK)