DIM30 Search Results

DIM300WHS12-A000

Contextual Info: DIM300WHS12-A000 DIM300WHS12-A000 Half Bridge IGBT Module Replaces January 2004 version, issue PDS5691-1.4 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate PDS5691-2.0 February 2004 KEY PARAMETERS VCES

dynex igbt 1200v

Abstract: DIM300WHS12A000
Contextual Info: DIM300WHS12-A000 DIM300WHS12-A000 Half Bridge IGBT Module PDS5691-1.4 January 2004 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 300A

DIM300XCM45-F000

Contextual Info: DIM300XCM45-F000 IGBT Chopper Module DS5918- 1.3 February 2009 LN26586 FEATURES Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9V 300A

DIM300BSS17-E000

Contextual Info: DIM300BSS17-E000 DIM300BSS17-E000 Half Bridge IGBT Module PDS5720-1.2 February 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

DIM300XCM45-F000

Abstract: AAAD LN25740
Contextual Info: DIM300XCM45-F000 IGBT Chopper Module Provisional DS5918 1.1 November 2007 LN25740 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9 V 300A 600A

DIM300WHS17-E

Abstract: DIM300WHS17-E000 PDS5680-2
Contextual Info: DIM300WHS17-E000 DIM300WHS17-E000 Half Bridge IGBT Module Replaces November 2003, version PDS5680-1.0 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5680-2.1 December 2003

Contextual Info: DIM300WHS12-H000 DIM300WHS12-H000 Fast Half Bridge IGBT Module Target Infomation DS5626-1.3 August 2003 FEATURES • Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ fsw for Applications > 20kHz ■ Isolated Copper Baseplate KEY PARAMETERS VCES

Contextual Info: DIM300BSS12-E000 DIM300BSS12-E000 Single Switch IGBT Module PDS5703-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

DIM300XCM45-F000

Abstract: 8888a
Contextual Info: DIM300XCM45-F000 IGBT Chopper Module Provisional DS5918 1.2 December 2007 LN25834 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9 V 300A 600A

DIM300WHS12-A000

Contextual Info: DIM300WHS12-A000 DIM300WHS12-A000 Half Bridge IGBT Module Replaces February 2004 version, issue PDS5691-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5691-3.0 June 2004 KEY PARAMETERS VCES typ

FDS5694-1

Abstract: DIM300WHS17-A000 1685 transistor
Contextual Info: DIM300WHS17-A000 DIM300WHS17-A000 Half Bridge IGBT Module FDS5694-1.2 December 2003 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V

ic lm 4704

Abstract: 1.2397 DIM300WHS12-E000
Contextual Info: DIM300WHS12-E000 DIM300WHS12-E000 Half Bridge IGBT Module PDS5685-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

DIM300BSS12-E000

Contextual Info: DIM300BSS12-E000 DIM300BSS12-E000 Single Switch IGBT Module PDS5703-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

Contextual Info: DIM300WHS12-E000 DIM300WHS12-E000 Half Bridge IGBT Module PDS5685-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

600w channel audio amp

Abstract: O1602A class d audio amplifier 2kW OPA1604 DIM30 O-1602 OPA1602 600W Audio Amplifier
Contextual Info: OPA1602 OPA1604 Burr-Brown Audio SBOS474B – APRIL 2011 – REVISED NOVEMBER 2011 www.ti.com High-Performance, Bipolar-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1602, OPA1604 FEATURES DESCRIPTION • • • • • • • • The OPA1602

300w audio amp schematic

Contextual Info: OP A1 641 OP A1 OPA1641 OPA1642 OPA1644 642 OP A1 64 4 Burr-Brown Audio www.ti.com SBOS484A – DECEMBER 2009 – REVISED APRIL 2010 High-Performance, JFET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1641, OPA1642, OPA1644 FEATURES DESCRIPTION

300w audio amp schematic circuit

Contextual Info: OP A1 641 OP A1 642 OPA1641 OPA1642 OPA1644 OP A1 64 4 Burr-Brown Audio www.ti.com SBOS484B – DECEMBER 2009 – REVISED AUGUST 2010 High-Performance, JFET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1641, OPA1642, OPA1644 FEATURES DESCRIPTION

Contextual Info: OP A1 641 OP A1 642 OPA1641 OPA1642 OPA1644 OP A1 64 4 Burr-Brown Audio www.ti.com SBOS484B – DECEMBER 2009 – REVISED AUGUST 2010 High-Performance, JFET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1641, OPA1642, OPA1644 FEATURES DESCRIPTION

SBOS484

Abstract: zener diode 100w
Contextual Info: OP A1 641 OP A1 OPA1641 OPA1642 OPA1644 642 OP A1 64 4 Burr-Brown Audio www.ti.com SBOS484A – DECEMBER 2009 – REVISED APRIL 2010 High-Performance, JFET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1641, OPA1642, OPA1644 FEATURES DESCRIPTION

Contextual Info: OP A1 641 OP A1 642 OPA1641 OPA1642 OPA1644 OP A1 64 4 Burr-Brown Audio www.ti.com SBOS484B – DECEMBER 2009 – REVISED AUGUST 2010 High-Performance, JFET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1641, OPA1642, OPA1644 FEATURES DESCRIPTION

Contextual Info: OP A1 641 OP A1 OPA1641 OPA1642 OPA1644 642 OP A1 64 4 Burr-Brown Audio www.ti.com SBOS484A – DECEMBER 2009 – REVISED APRIL 2010 High-Performance, JFET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1641, OPA1642, OPA1644 FEATURES DESCRIPTION

Contextual Info: OPA1602 OPA1604 Burr-Brown Audio SBOS474B – APRIL 2011 – REVISED NOVEMBER 2011 www.ti.com High-Performance, Bipolar-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1602, OPA1604 FEATURES DESCRIPTION • • • • • • • • The OPA1602

Contextual Info: OPA1602 OPA1604 Burr-Brown Audio SBOS474A – APRIL 2011 – REVISED JUNE 2011 www.ti.com High-Performance, Bipolar-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1602, OPA1604 FEATURES DESCRIPTION • • • • • • • • The OPA1602

Tag 225-600

Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half