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    DIFFUSION TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    DIFFUSION TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SB1347

    Abstract: 2SD2029
    Contextual Info: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current


    Original     		2SB1347 2SD2029 2SB1347 2SD2029 PDF

    PU3219

    Abstract: PUA3119 PUA3219 PU3119
    Contextual Info: Power Transistor Arrays PUA3119 PU3119 Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUA3219 (PU3219) Unit: mm • Features Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)


    Original     		PUA3119 PU3119) PUA3219 PU3219) PU3219 PUA3119 PUA3219 PU3119 PDF

    2SD1266

    Abstract: 2SD1266A 2SB0941 2SB941 2SB941A
    Contextual Info: Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0941 2SB941 and 2SB941A (2SB941A) Parameter Symbol Rating Unit VCBO 60 V Collector to base voltage 2SD1266 Collector to emitter voltage


    Original     		2SD1266, 2SD1266A 2SB0941 2SB941) 2SB941A 2SB941A) 2SD1266 2SD1266 2SD1266A 2SB0941 2SB941 2SB941A PDF

    2SB1192

    Abstract: 2SB1192A 2SD1772 2SD1772A
    Contextual Info: Power Transistors 2SD1772, 2SD1772A Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Complementary to 2SB1192 and 2SB1192A Unit: mm Parameter Symbol Collector to 2SD1772 base voltage 2SD1772A Collector to 2SD1772


    Original     		2SD1772, 2SD1772A 2SB1192 2SB1192A 2SD1772 2SB1192A 2SD1772 2SD1772A PDF

    PU4120

    Abstract: PU4220 PU4420 PU4520 PUB4120 PUB4220 PUB4420 PUB4520
    Contextual Info: Power Transistor Arrays PUB4120 PU4120 , PUB4420 (PU4420) Silicon NPN triple diffusion planar type darlington For power amplification Complementary to PUB4220 (PU4220), PUB4520 (PU4520) Unit: mm • Features 9.5±0.2 • High forward current transfer ratio hFE


    Original     		PUB4120 PU4120) PUB4420 PU4420) PUB4220 PU4220) PUB4520 PU4520) PU4120 PU4220 PU4420 PU4520 PUB4120 PUB4220 PUB4420 PUB4520 PDF

    2SB1317

    Abstract: 2SD1975
    Contextual Info: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 Unit: mm Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current


    Original     		2SB1317 2SD1975 2SB1317 2SD1975 PDF

    2SD1266

    Abstract: 2SB941 2SB941A 2SD1266A
    Contextual Info: Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A • Features Parameter 2SD1266 base voltage 2SD1266A Collector to 2SD1266 Ratings 60 VCBO 60 VCEO emitter voltage 2SD1266A


    Original     		2SD1266, 2SD1266A 2SB941 2SB941A 2SD1266 2SD1266 2SB941A 2SD1266A PDF

    2SD1264

    Abstract: 2SB0940 2SB0940A 2SB940 2SB940A 2SD1264A
    Contextual Info: Power Transistors 2SD1264, 2SD1264A Silicon NPN triple diffusion planar type For low-freauency power amplification For TV vertical deflection output Complementary to 2SB0940 2SB940 and 2SB0940A (2SB940A) ● • Absolute Maximum Ratings (TC=25˚C) Parameter


    Original     		2SD1264, 2SD1264A 2SB0940 2SB940) 2SB0940A 2SB940A) 2SD1264 2SD1264 2SB0940 2SB0940A 2SB940 2SB940A 2SD1264A PDF

    2SD1277A

    Abstract: 2SB0951 2SB0951A 2SB951 2SB951A 2SD1277
    Contextual Info: Power Transistors 2SD1277, 2SD1277A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB0951 2SB951 and 2SB0951A (2SB951A) Unit: mm • Parameter Symbol Collector to 2SD1277 base voltage 2SD1277A Collector to


    Original     		2SD1277, 2SD1277A 2SB0951 2SB951) 2SB0951A 2SB951A) 2SD1277 2SD1277A 2SB0951 2SB0951A 2SB951 2SB951A 2SD1277 PDF

    Contextual Info: Power Transistor Arrays PUB4127 PU4127 Silicon NPN triple diffusion planar type For power amplification/switching Unit: mm • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 35±5 V Collector-emitter voltage (Base open)


    Original     		PUB4127 PU4127) PDF

    PU4119

    Abstract: PU4219 PU4419 PU4519 PUB4119 PUB4219 PUB4419 PUB4519
    Contextual Info: Power Transistor Arrays PUB4119 PU4119 , PUB4419 (PU4419) Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUB4219 (PU4219), PUB4519 (PU4519) Unit: mm • Features 9.5±0.2 • High forward current transfer ratio hFE


    Original     		PUB4119 PU4119) PUB4419 PU4419) PUB4219 PU4219) PUB4519 PU4519) PU4119 PU4219 PU4419 PU4519 PUB4119 PUB4219 PUB4419 PUB4519 PDF

    2SD1267A

    Abstract: 2SB0942 2SB0942A 2SD1267
    Contextual Info: Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0942 and 2SB0942A Parameter Collector to base voltage 2SD1267 Collector to emitter voltage 2SD1267 Symbol Rating Unit VCBO 60 V 16.7±0.3


    Original     		2SD1267, 2SD1267A 2SB0942 2SB0942A 2SD1267 2SD1267A 2SB0942A 2SD1267 PDF

    Contextual Info: Power Transistor Arrays PUB4111 PU4111 , PUB4411 (PU4411) Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUB4211 (PU4211), PUB4511 (PU4511) Unit: mm • Features 25.3±0.2 4.0±0.2 9.5±0.2 1.65±0.2 Solder Dip


    Original     		PUB4111 PU4111) PUB4411 PU4411) PUB4211 PU4211) PUB4511 PU4511) PDF

    Contextual Info: Power Transistors 2SC3982, 2SC3982A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm Parameter Symbol Collector to 2SC3982 base voltage 2SC3982A Collector to TC=25˚C 2SC3982 emitter voltage 2SC3982A Ratings


    Original     		2SC3982, 2SC3982A 2SC3982 2SC3982A PDF

    2SB938

    Abstract: 2SB938A 2SD1261 2SD1261A
    Contextual Info: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB938 and 2SB938A • Absolute Maximum Ratings 10.0±0.3 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE


    Original     		2SD1261, 2SD1261A 2SB938 2SB938A 2SD1261 2SB938A 2SD1261 2SD1261A PDF

    2SC496-0

    Abstract: 2SC4960 2SC4960A
    Contextual Info: Power Transistors 2SC4960, 2SC4960A Silicon NPN triple diffusion planar type For power switching Unit: mm • Features ● ● ■ Absolute Maximum Ratings Parameter Symbol Collector to 2SC4960 base voltage 2SC4960A Collector to emitter voltage Collector to


    Original     		2SC4960, 2SC4960A 2SC4960 SC4960, 2SC496-0 2SC4960 2SC4960A PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planar type For high breakdown voltage general amplification For small TV video output Complementary to 2SC1573 and 2SA0879


    Original     		2002/95/EC) 2SC1573, 2SC1573A, 2SC1573B 2SC1573 2SA0879 PDF

    BUD87

    Abstract: smd transistor 023 BUD86 BUD86-SMD smd transistor 239
    Contextual Info: T em ic BUD86 • BUD87 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • Multi diffusion technology High reverse voltage • Glass passivation Short switching times Applications Electronic lamp ballast circuits Switch-mode power supplies


    OCR Scan     		bud86 bud87 BUD86 BUD87 smd transistor 023 BUD86-SMD smd transistor 239 PDF

    BUD86

    Abstract: BUD87
    Contextual Info: BUD86 • BUD87 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D Multi diffusion technology D High reverse voltage D Glass passivation D Short switching times Applications Electronic lamp ballast circuits Switch-mode power supplies


    Original     		BUD86 BUD87 D-74025 BUD86 BUD87 PDF

    Contextual Info: Power Transistor Arrays PUB4119 PU4119 , PUB4419 (PU4419) Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUB4219 (PU4219), PUB4519 (PU4519) Unit: mm • Features 25.3±0.2 9.5±0.2 1.65±0.2 Solder Dip


    Original     		PUB4119 PU4119) PUB4419 PU4419) PUB4219 PU4219) PUB4519 PU4519) PDF

    Contextual Info: Power Transistor Arrays PUA3120 PU3120 Silicon NPN triple diffusion planar type darlington For power amplification Complementary to PUA3220 (PU3220) Unit: mm 20.2±0.3 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60


    Original     		PUA3120 PU3120) PUA3220 PU3220) PDF

    2SB1317

    Abstract: 2SD1975
    Contextual Info: Power Transistors 2SD1975 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1317 5.0±0.3 3.0 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


    Original     		2SD1975 2SB1317 2SB1317 2SD1975 PDF

    2SB1347

    Abstract: 2SD2029
    Contextual Info: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 5.0±0.3 3.0 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


    Original     		2SD2029 2SB1347 2SB1347 2SD2029 PDF

    PU4110

    Abstract: PU4210 PU4410 PU4510 PUB4110 PUB4210 PUB4410 PUB4510
    Contextual Info: Power Transistor Arrays PUB4110 PU4110 , PUB4410 (PU4410) Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUB4210 (PU4210), PUB4510 (PU4510) Unit: mm • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PUB4110 PU4110) PUB4410 PU4410) PUB4210 PU4210) PUB4510 PU4510) PU4110 PU4210 PU4410 PU4510 PUB4110 PUB4210 PUB4410 PUB4510 PDF