DIFFUSION TRANSISTOR Search Results

2SB1347

Abstract: 2SD2029
Contextual Info: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current

PU3219

Abstract: PUA3119 PUA3219 PU3119
Contextual Info: Power Transistor Arrays PUA3119 PU3119 Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUA3219 (PU3219) Unit: mm • Features Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

2SD1266

Abstract: 2SD1266A 2SB0941 2SB941 2SB941A
Contextual Info: Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0941 2SB941 and 2SB941A (2SB941A) Parameter Symbol Rating Unit VCBO 60 V Collector to base voltage 2SD1266 Collector to emitter voltage

2SB1192

Abstract: 2SB1192A 2SD1772 2SD1772A
Contextual Info: Power Transistors 2SD1772, 2SD1772A Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Complementary to 2SB1192 and 2SB1192A Unit: mm Parameter Symbol Collector to 2SD1772 base voltage 2SD1772A Collector to 2SD1772

PU4120

Abstract: PU4220 PU4420 PU4520 PUB4120 PUB4220 PUB4420 PUB4520
Contextual Info: Power Transistor Arrays PUB4120 PU4120 , PUB4420 (PU4420) Silicon NPN triple diffusion planar type darlington For power amplification Complementary to PUB4220 (PU4220), PUB4520 (PU4520) Unit: mm • Features 9.5±0.2 • High forward current transfer ratio hFE

2SB1317

Abstract: 2SD1975
Contextual Info: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 Unit: mm Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current

2SD1266

Abstract: 2SB941 2SB941A 2SD1266A
Contextual Info: Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A • Features Parameter 2SD1266 base voltage 2SD1266A Collector to 2SD1266 Ratings 60 VCBO 60 VCEO emitter voltage 2SD1266A

2SD1264

Abstract: 2SB0940 2SB0940A 2SB940 2SB940A 2SD1264A
Contextual Info: Power Transistors 2SD1264, 2SD1264A Silicon NPN triple diffusion planar type For low-freauency power amplification For TV vertical deflection output Complementary to 2SB0940 2SB940 and 2SB0940A (2SB940A) ● • Absolute Maximum Ratings (TC=25˚C) Parameter

2SD1277A

Abstract: 2SB0951 2SB0951A 2SB951 2SB951A 2SD1277
Contextual Info: Power Transistors 2SD1277, 2SD1277A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB0951 2SB951 and 2SB0951A (2SB951A) Unit: mm • Parameter Symbol Collector to 2SD1277 base voltage 2SD1277A Collector to

Contextual Info: Power Transistor Arrays PUB4127 PU4127 Silicon NPN triple diffusion planar type For power amplification/switching Unit: mm • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 35±5 V Collector-emitter voltage (Base open)

PU4119

Abstract: PU4219 PU4419 PU4519 PUB4119 PUB4219 PUB4419 PUB4519
Contextual Info: Power Transistor Arrays PUB4119 PU4119 , PUB4419 (PU4419) Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUB4219 (PU4219), PUB4519 (PU4519) Unit: mm • Features 9.5±0.2 • High forward current transfer ratio hFE

2SD1267A

Abstract: 2SB0942 2SB0942A 2SD1267
Contextual Info: Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0942 and 2SB0942A Parameter Collector to base voltage 2SD1267 Collector to emitter voltage 2SD1267 Symbol Rating Unit VCBO 60 V 16.7±0.3

Contextual Info: Power Transistor Arrays PUB4111 PU4111 , PUB4411 (PU4411) Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUB4211 (PU4211), PUB4511 (PU4511) Unit: mm • Features 25.3±0.2 4.0±0.2 9.5±0.2 1.65±0.2 Solder Dip

Contextual Info: Power Transistors 2SC3982, 2SC3982A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm Parameter Symbol Collector to 2SC3982 base voltage 2SC3982A Collector to TC=25˚C 2SC3982 emitter voltage 2SC3982A Ratings

2SB938

Abstract: 2SB938A 2SD1261 2SD1261A
Contextual Info: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB938 and 2SB938A • Absolute Maximum Ratings 10.0±0.3 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE

2SC496-0

Abstract: 2SC4960 2SC4960A
Contextual Info: Power Transistors 2SC4960, 2SC4960A Silicon NPN triple diffusion planar type For power switching Unit: mm • Features ● ● ■ Absolute Maximum Ratings Parameter Symbol Collector to 2SC4960 base voltage 2SC4960A Collector to emitter voltage Collector to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planar type For high breakdown voltage general amplification For small TV video output Complementary to 2SC1573 and 2SA0879

BUD87

Abstract: smd transistor 023 BUD86 BUD86-SMD smd transistor 239
Contextual Info: T em ic BUD86 • BUD87 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • Multi diffusion technology High reverse voltage • Glass passivation Short switching times Applications Electronic lamp ballast circuits Switch-mode power supplies

BUD86

Abstract: BUD87
Contextual Info: BUD86 • BUD87 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D Multi diffusion technology D High reverse voltage D Glass passivation D Short switching times Applications Electronic lamp ballast circuits Switch-mode power supplies

Contextual Info: Power Transistor Arrays PUB4119 PU4119 , PUB4419 (PU4419) Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUB4219 (PU4219), PUB4519 (PU4519) Unit: mm • Features 25.3±0.2 9.5±0.2 1.65±0.2 Solder Dip

Contextual Info: Power Transistor Arrays PUA3120 PU3120 Silicon NPN triple diffusion planar type darlington For power amplification Complementary to PUA3220 (PU3220) Unit: mm 20.2±0.3 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60

2SB1317

Abstract: 2SD1975
Contextual Info: Power Transistors 2SD1975 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1317 5.0±0.3 3.0 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2SB1347

Abstract: 2SD2029
Contextual Info: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 5.0±0.3 3.0 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

PU4110

Abstract: PU4210 PU4410 PU4510 PUB4110 PUB4210 PUB4410 PUB4510
Contextual Info: Power Transistor Arrays PUB4110 PU4110 , PUB4410 (PU4410) Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUB4210 (PU4210), PUB4510 (PU4510) Unit: mm • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open)