DI 856 Search Results

63B4

Abstract: 100LA4 63B14 VSF320 100LB4 IEC 90B5 B562-2 56B14 90LB4 63A4
Contextual Info: Pag. Page Indice Index Caratteristiche tecniche Technical characteristics Designazione Designation Versioni Versions Simbologia Symbols Dati di dentatura Toothing data Rendimento Efficiency Posizioni di montaggio Mounting positions Carichi radiali Radial loads

written

Abstract: XC4010E-PQ160 PQ160 PQ208 PQ240 TQ144 XC4000 XC4000E XC4010E XC4013E
Contextual Info: LogiCore PCI Master and Slave Interface User's Guide November 1, 1996 Version 1.1 LC-DI-PCIM-C and LC-DI-PCIS-C Table of Contents LogiCore Facts 1. Introduction . 1 2. Getting Started . 3

ST P239

Abstract: 714 p180 verilog code for pci express memory transaction P181 Japan P135 equivalent 714 p181 XC000E HQ240 XC4013EPQ160 XC4013
Contextual Info: PCI Master Interface, PCI Slave Interface February, 1997 Product Description Features • Fully 2.1 PCI compliant 32 bit, 33MHz PCI Interface ◊ Master Initiator/Target , LC-DI-PCIM-C ◊ Slave (Target-only), LC-DI-PCIS-C PCI Master and Slave Interfaces V1.1.0

M2KA

Abstract: HEPC XS2F-D523-D80-A OMR H C3JW ly2f t2 YAZAKI Terminal7116-4022 WL01CA 54151A
Contextual Info: We surveyed SVHC 161 substances. REACH/SVHC Information Product description SMCI XB. SMC TE SENSOR YA-JA01 PB FREE SENSOR YA-HC05 PBFREE SP SMC DI SENSOR YA-HC04 SMC DI SENSOR YA-JB01 SENSOR YA-HC09(SP) SENSOR YA-HA01PB-FREE(SP) SENSOR YA-HC09 SMC YA-JA02 A-TE SENSOR

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNA3602L PIN Photodiode For optical control systems M Di ain sc te on na tin nc ue e/ d • Features ■ Absolute Maximum Ratings Parameter di p Pl lan nclu ea e se pla m d m des

Contextual Info: Phototransistors PNZ154NC Silicon planar type For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  Fast response  Wide spectral sensitivity characteristics  Adoption of visible light cutoff resin  Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ202S (PN202S) Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. M Di ain sc te on na tin nc ue e/ d • Darlington output, high sensitivity

BT 816 triac

Abstract: ky 202 h thyristor thyristor aeg thyristor BBC CS 8-12 Halbleiterbauelemente DDR ky 201 thyristor tesla typ 202 thyristor thyristor AEG t 10 n 600 thyristor BBC thyristor BBC CS 0,6
Contextual Info: electronica du/dt GT T AV t di/dt Günter Pilz Technische Daten von Thyristoren, Triacs und Diacs electrónica • Band 19G GÜNTER PILZ Technische Daten von Thyristoren, Triacs und Diacs MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK I. Auflage {(j) Militär vorlag

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ300 (PN300), PNZ300F (PN300F) Silicon planar type φ4.6±0.15 PAZ300 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens 0. 15 0± 1. di p Pl lan nclu ea e

PN107F

Abstract: PN108F PNZ107F PNZ108F Lx 3c paz1
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F φ4.6±0.15 M Di ain sc te on na tin nc ue e/ d 12.7 min. For optical control systems • Features 3° 1. 0± 0.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ334 (PN334) Silicon planar type For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  Plastic type package (φ5)  High coupling capabillity suitable for plastic fiber

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ106 (PN106) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features M Di ain sc te on na tin nc ue e/ d 12.7 min. • High sensitivity

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ150 (PN150) Silicon planar type Unit: mm For optical control systems 4.2±0.3 4.5±0.3 φ3.5±0.2 (1.8) 2-0.98±0.2 2-0.45±0.15 10.0 min. 12.8 min. M Di ain sc te on na tin nc

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102 (PN102) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens M Di ain sc te on na tin nc ue e/ d • Features 12.7 min. • High sensitivity

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ313B (PN313B) Silicon planar type For optical control systems Unit: mm 7.0±0.5 Anode mark (φ1.6) • Features 2-1.2±0.15 2.3±0.3 13 min. M Di ain sc te on na tin nc ue e/

PN109F

Abstract: PNZ109F
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109F (PN109F) Silicon planar type Unit: mm φ4.6±0.15 Glass window M Di ain sc te on na tin nc ue e/ d 4.5±0.2 For optical control systems • Features 12.7 min. ue pl d in

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323 (PN323) Silicon planar type For optical control systems • Features  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ106 (PN106) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens M Di ain sc te on na tin nc ue e/ d • Features 12.7 min. • High sensitivity

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ155 (PN155) Silicon planar type Unit: mm 1.6±0.1 For optical control systems 1.6±0.15 0.8±0.1 12.8 min. (2.95) M Di ain sc te on na tin nc ue e/ d 3.9±0.25 • High sensitivity

MM58539

Contextual Info: MM58548 Multiplexed LCD Driver General Description Features The MM58548 is a monolithic integrated circuit utilizing CMOS metal-gate, low threshold P and N-channel devices. It drives a 16-row by 16-column dot matrix LCD array di­ rectly under control o t an external microprocessor. The

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1801L (PN168) Silicon planar type For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High sensitivity  Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108 (PN108) Silicon planar type For optical control systems • Features  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll

2CSC400002D0903

Abstract: 2CSG210200R1211 ABB E 257 C30-230 S465502 2CSG035100R1211 2CSG210100R1211 ABB SACE sn 125 EA1733 LCD TV SCHEMA S550284
Contextual Info: Catalogo tecnico System pro M compact System pro M Interruttori magnetotermici, differenziali e apparecchi modulari per impianti in bassa tensione System pro M compact® - System pro M Per tener conto dell’evoluzione delle Norme e dei materiali, le caratteristiche e le dimensioni di ingombro indicate nel presente

PN109CL

Abstract: PNZ109CL
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109CL (PN109CL) Silicon planar type Unit: mm 3-φ0.43±0.05 M Di ain sc te on na tin nc ue e/ d • High sensitivity: ICE(L) = 2 mA (min.) • Wide directivity characteristics for easy use