DGE MICRO Search Results

frequency divider organs

Abstract: S10130 electronic organ
Contextual Info: S10130 AMERICAN MICROSYSTEMS, INC.I Features General Description □ Contains Six Binary D ividers □ T riggers on N egative-G oing E dge □ H igh Impedance Inputs The S10130 is a monolithic frequency divider circuit fabricated with P-Channel ion-implanted MOS technology.

SMOS182

Contextual Info: TMS626802, TMS636802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS182 - FEBRUARY 1994 TM S626802 LVTTL DGE PACKAGE (TO P VIE W ) 3.3-V Power Supply (10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses) vcc [ 1

TMS6264

Abstract: TMS626812
Contextual Info: TMS626412A, TMS626812A 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS691A - JULY 1997 - REVISED OCTOBER 1997 TMS626412A DGE PACKAGE TOP VIEW 3.3-V Power Supply (±10% Tolerance) Two Banks for On-Chip Interleaving

Contextual Info: TMS465169, TMS465169P 4194304 BY 16ĆBIT EXTENDED DATA OUT DYNAMIC RANDOMĆACCESS MEMORIES SMHS566B − JUNE 1997 − REVISED APRIL 1998 DGE PACKAGE TOP VIEW D Organization . . . 4 194 304 by 16 Bits D Single 3.3-V Power Supply (± 0.3 V Tolerance) VCC

1995 AND sdram AND

Contextual Info: TMS626162 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS683E - FEBRUARY 1995 - REVISED APRIL 1997 Organization . . . 512K x 16 x 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses) DGE PACKAGE

TMS6264

Contextual Info: TMS626402 2097152-WORD BY 4-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS842A - FEBRUARY 1994 - REVISED JUNE 1995 • Organization . . . 2M x 4 x 2 Banks DGE PACKAGE TOP VIEW • 3.3-V Power Supply (±10% Tolerance) • Two Banks fo r On-Chip Interleaving

RF6026EA

Abstract: polar modulator fractional N PLL rf6026 GMSK modulator GSM Transceiver dcr gmsk transceiver DAC CORDIC SSB Modulator RF602
Contextual Info: RF6026EA/GA Quad-Band GSM/GPRS/E DGE Transceiver Module RF6026EA/GA Proposed QUAD-BAND GSM/GPRS/EDGE TRANSCEIVER MODULE RX EN SSB SDI SCLK LDTO E2 F3 C2 G4 F4 F5 G3 RX1900 A6 SAW / LNA Matching General Purpose Outputs Digital LO LNA4 RXEN Features „ Frac-N Digital GMSK Modulator

pjuaa

Abstract: 1993 SDRAM 7216B
Contextual Info: 16 777 216 BIT SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY S M 0 S6 82-J A N U A R Y 1993 DGE PACKAG ET TOP VIEW Organization. . . 1M x 8 x 2 Banks 3.3 V-Power Supply (10% Tolerance) Two Banks For On-Chip Interleaving (Gapless Accesses) * High Bandwidth - Up to 100-MHz Data

frequency divider organs

Abstract: S10129
Contextual Info: AMI S10129 AMERICAN MICROSYSTEMS, INC. Features General Description □ Contains S even Binary D ividers □ T riggers on N egative-G oing E dge □ H igh Im pedance Inputs T he S10129 is a m onolithic freq u e n c y d iv id e r circu it fa b ric ate d w ith P-Channel ion-im planted MOS technology.

Contextual Info: SMJ626162 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY S G M S 737B -JU LY 1997-R E V IS E D APRIL 1998 Organization 512K x 16 Bits x 2 Banks 3.3-V Power Supply ±5% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses) DGE+/HKD PACKAGE

TMS626812

Contextual Info: TMS626812A 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS691B − JULY 1997 − REVISED APRIL 1998 D Organization D D D D D D D D D D D D D D D D TMS626812A DGE PACKAGE TOP VIEW 1M Words x 8 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)

C108

Abstract: DGE MICRO C108D2 C108F1 C108Q1 C108Q2 C108Q3 C108Q4 C108U C108Y2
Contextual Info: DIGITRON O ELECTRONIC R e f e r e n c e Mb, CORP 3bE D 5fl4EtiD7 ODDODIM 3 ?< *> £ S a 6 tty '23 03 SiHcon Controlled Rectifier d^ . T v^ S'/S DGE Flat Pack Design Model C108 Up to 600 Volts 5 Amperes RM$j M A X IM U M A L L O W A B L E R A T IN G S C108

N07A

Abstract: C107 digitron
Contextual Info: DIGITRON ELECTRONIC CORP R e f e r e n c e No. afiMStiD? GD0DD13 1 • DGE 3bE D TVS-if fo o ,a SAG.1TVÏ2 3 ;r . i' O - 0 3 w / Silicon Controlled Rectifier 'J w Flat Pack Design * Model C107 Up to 600 Volts 4 Amperes RMS CIO 7 M A X IM U M A L L O W A B L E R A T IN G S

C106F2

Abstract: C106Y1 C106MI C106D1 c106f C106F1 C106Q1 C106M3 C106D2 C106Y4
Contextual Info: TjlGITRON ELECTRONIC CORP 3bE D • SflMgbO? □O DO Oi a~ T DGE _T’£ 5>/?_ R e f e r e n c e No. 'sÄ'0^ir.Y23 ■ .O - Silicon Controlled Rectifier r* gf o' Flat Pack Design V-'S Op to 600 Volts 4 Amperes RMS M A X IM U M C106 J 'Tj, Model C106 -u U W A B L E R A T IN G S

Contextual Info: iamteo Q iT R IP 0,50mm .0197" (0,80mm) .0315" HQCD, EQCD SERIES E Q C D -0 4 0 -0 4 .0 0 -T T L -S T R -2 H Q C D - 0 3 0 - 0 6 .0 0 - T E D -T E D -1 - F Q STRIP COAX CABLE ASSEMBLIES SPECIFICATIONS For com plete specifications see w w w .sam tec.com ?H Q C D or

Contextual Info: STEVAL-IPE010V2 Energy meter demonstration kit motherboard based on the STPMC1 Data brief Features • Vnom: 230 VRMS ■ Inom CT: 1 A Imax 30 A ■ Inom Sh: 5 A (Imax 80 A) ■ fLIN: 50 / 60 ± 10% Hz ■ Operating temperature: -40 - +85 °C ■ RoHS compliant

10 pin flat cable connector

Abstract: circuit diagram of motherboard STPMC1 schematic diagram of energy meters ALL MOTHERBOARD CIRCUIT DIAGRAM motherboard voltage sensor energy meter circuit diagram MOTHERBOARD CIRCUIT diagram only motherboard schematic diagram STPMS
Contextual Info: STEVAL-IPE010V1 Energy meter demonstration kit motherboard based on the STPMC1 and STPMS1 Data brief Features • Vnom: 230 VRMS ■ Inom CT: 1 A Imax 30 A ■ Inom Sh: 5 A (Imax 80 A) ■ fLIN: 50 / 60 ± 10% Hz ■ Operating temperature: - 40 / + 85 °C

Contextual Info: STEVAL-IPE010V1 Energy meter demonstration kit motherboard based on the STPMC1 and STPMS1 Data brief Features • Vnom: 230 VRMS ■ Inom CT: 1 A Imax 30 A ■ Inom Sh: 5 A (Imax 80 A) ■ fLIN: 50 / 60 ± 10% Hz ■ Operating temperature: - 40 / + 85 °C

M8085A

Abstract: 8355 intel microprocessor notes 8080a intel microprocessor pin diagram A8-15 ALE111 T-60 intel 8080A instruction set 8259 Programmable Interrupt Controller file
Contextual Info: intei M8085A SINGLE CHIP 8-BIT N-CHANNEL MICROPROCESSOR M ILITA R Y • Four Vectored Interrupt Inputs One is non-Maskable Plus an 8080Acompatible interrupt Single +5V Power Supply 100% Software Compatible with 8080A 1.3 jus Instruction Cycle ■ Serial In/Serial Out Port

f90l

Abstract: SDA0810
Contextual Info: SIEMENS Microprocessor-Compatible 10-Bit A/D Converters with 8-Channel Multiplexer SDA 0810 SDA 1810 P re lim in a ry D ata A C M O S IC F eatures • • • • • • • • • • • • • A d va n ce d C M O S AC M O S te ch no lo g y 10-bit resolution

Contextual Info: FAST CMOS 12-BIT SYNCHRONOUS BUS EXCHANGER IDT54/74FCT162H272AT/CT/ET ADVANCE INFORMATION Integrated Device Technology, Inc. FEATURES: • • • < • • • • • • • 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps Low input and output leakage < I^ A (max.)

Contextual Info: EDGE RATE" COAX CABLE ASSEMBLIES SPECIFICATIONS Broadside wiping contacts reduce unwanted crosstalk Mates with: ERF8. ERM8 For com plete specifications and recom m ended PCB layouts see w w w .sam tec.com ?E R C D Cable: 34 AW G coax ribbon cable Signal Routing:

DMX RECEIVER

Abstract: dmx512 receiver UM0791 STM32 firmware library dmx 512 receiver DMX 512 dmx-512 STM32F103Zx stm32 dmx512 dmx512 arm STM32 firmware library
Contextual Info: UM0791 User manual Demonstration firmware for the DMX-512 communication protocol receiver based on the STM32F103Zx Introduction This document describes how to use the demonstration firmware for the DMX-512 communication protocol receiver. The USART universal synchronous asynchronous

c1941 transistor

Abstract: TRANSISTOR C1941
Contextual Info: ISO HIGH-PERFORMANCE AlGaAs PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS II MCT5200 MCT5201 PACKAGE DIMENSIONS DESCRIPTION The MCT520X are high performance logic compatible phototransistor type optically coupled isolator products. They are constructed using a very low degradation and