DGE MICRO Search Results

frequency divider organs

Abstract: S10130 electronic organ
Contextual Info: S10130 AMERICAN MICROSYSTEMS, INC.I Features General Description □ Contains Six Binary D ividers □ T riggers on N egative-G oing E dge □ H igh Impedance Inputs The S10130 is a monolithic frequency divider circuit fabricated with P-Channel ion-implanted MOS technology.

SMOS182

Contextual Info: TMS626802, TMS636802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS182 - FEBRUARY 1994 TM S626802 LVTTL DGE PACKAGE (TO P VIE W ) 3.3-V Power Supply (10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses) vcc [ 1

TMS6264

Abstract: TMS626812
Contextual Info: TMS626412A, TMS626812A 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS691A - JULY 1997 - REVISED OCTOBER 1997 TMS626412A DGE PACKAGE TOP VIEW 3.3-V Power Supply (±10% Tolerance) Two Banks for On-Chip Interleaving

Contextual Info: TMS465169, TMS465169P 4194304 BY 16ĆBIT EXTENDED DATA OUT DYNAMIC RANDOMĆACCESS MEMORIES SMHS566B − JUNE 1997 − REVISED APRIL 1998 DGE PACKAGE TOP VIEW D Organization . . . 4 194 304 by 16 Bits D Single 3.3-V Power Supply (± 0.3 V Tolerance) VCC

1995 AND sdram AND

Contextual Info: TMS626162 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS683E - FEBRUARY 1995 - REVISED APRIL 1997 Organization . . . 512K x 16 x 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses) DGE PACKAGE

TMS6264

Contextual Info: TMS626402 2097152-WORD BY 4-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS842A - FEBRUARY 1994 - REVISED JUNE 1995 • Organization . . . 2M x 4 x 2 Banks DGE PACKAGE TOP VIEW • 3.3-V Power Supply (±10% Tolerance) • Two Banks fo r On-Chip Interleaving

TMS465169

Abstract: TMS465169P
Contextual Info: TMS465169, TMS465169P 4194304 BY 16ĆBIT EXTENDED DATA OUT DYNAMIC RANDOMĆACCESS MEMORIES SMHS566B − JUNE 1997 − REVISED APRIL 1998 D Organization . . . 4 194 304 by 16 Bits D Single 3.3-V Power Supply ± 0.3 V DGE PACKAGE ( TOP VIEW Tolerance) D Performance Ranges:

Contextual Info: UNISONICTECHNOLOGIESCO., LTD TDA7297 LINEAR INTEGRATED CIRCUIT 1 0 +1 0 W DU AL BRI DGE AM PLI FI ER  DESCRI PT I ON The UTC TDA7297 is a dual bridge amplifier, it uses UTC advanced technology to provide customers with wide supply voltage, stand-by function, mute function, thermal overload

RF6026EA

Abstract: polar modulator fractional N PLL rf6026 GMSK modulator GSM Transceiver dcr gmsk transceiver DAC CORDIC SSB Modulator RF602
Contextual Info: RF6026EA/GA Quad-Band GSM/GPRS/E DGE Transceiver Module RF6026EA/GA Proposed QUAD-BAND GSM/GPRS/EDGE TRANSCEIVER MODULE RX EN SSB SDI SCLK LDTO E2 F3 C2 G4 F4 F5 G3 RX1900 A6 SAW / LNA Matching General Purpose Outputs Digital LO LNA4 RXEN Features „ Frac-N Digital GMSK Modulator

pjuaa

Abstract: 1993 SDRAM 7216B
Contextual Info: 16 777 216 BIT SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY S M 0 S6 82-J A N U A R Y 1993 DGE PACKAG ET TOP VIEW Organization. . . 1M x 8 x 2 Banks 3.3 V-Power Supply (10% Tolerance) Two Banks For On-Chip Interleaving (Gapless Accesses) * High Bandwidth - Up to 100-MHz Data

TDA7266

Abstract: TDA7266L
Contextual Info: UNISONICTECHNOLOGIESCO., LTD TDA7266 LINEAR INTEGRATED CIRCUIT 7 +7 W DU AL BRI DGE AM PLI FI ER ̈ DESCRI PT I ON HZIP-15A The UTC TDA7266 is a 7+7W dual bridge amplifier specially designed for TV and Portable Radio applications. ̈ FEAT U RES * Wide Supply Voltage Range 3 ~ 18V

frequency divider organs

Abstract: S10129
Contextual Info: AMI S10129 AMERICAN MICROSYSTEMS, INC. Features General Description □ Contains S even Binary D ividers □ T riggers on N egative-G oing E dge □ H igh Im pedance Inputs T he S10129 is a m onolithic freq u e n c y d iv id e r circu it fa b ric ate d w ith P-Channel ion-im planted MOS technology.

TMS626162A

Contextual Info: TMS626162A 524ā288 BY 16ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS692B − JULY 1997 − REVISED MARCH 1998 D Organization D D D D D D D D D D D D D D D DGE PACKAGE TOP VIEW 512K x 16 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)

Contextual Info: SMJ626162 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY S G M S 737B -JU LY 1997-R E V IS E D APRIL 1998 Organization 512K x 16 Bits x 2 Banks 3.3-V Power Supply ±5% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses) DGE+/HKD PACKAGE

TMS626812

Contextual Info: TMS626812A 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS691B − JULY 1997 − REVISED APRIL 1998 D Organization D D D D D D D D D D D D D D D D TMS626812A DGE PACKAGE TOP VIEW 1M Words x 8 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)

TMS626812A

Abstract: TMS626812
Contextual Info: TMS626812A 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS691B − JULY 1997 − REVISED APRIL 1998 D Organization D D D D D D D D D D D D D D D D TMS626812A DGE PACKAGE TOP VIEW 1M Words x 8 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)

TMS626812B

Abstract: TMS626812
Contextual Info: TMS626812B 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORIES SMOS693A − OCTOBER 1997 − REVISED APRIL 1998 D Organization D D D D D D D D D D D D D D D D D TMS626812B DGE PACKAGE TOP VIEW 1048576 by 8 Bits by 2 Banks 3.3-V Power Supply (± 10% Tolerance)

C108

Abstract: DGE MICRO C108D2 C108F1 C108Q1 C108Q2 C108Q3 C108Q4 C108U C108Y2
Contextual Info: DIGITRON O ELECTRONIC R e f e r e n c e Mb, CORP 3bE D 5fl4EtiD7 ODDODIM 3 ?< *> £ S a 6 tty '23 03 SiHcon Controlled Rectifier d^ . T v^ S'/S DGE Flat Pack Design Model C108 Up to 600 Volts 5 Amperes RM$j M A X IM U M A L L O W A B L E R A T IN G S C108

C108F1

Abstract: "Silicon Controlled Rectifier" C108 C108F2 C108Q1 C108Q2 C108Q3 C108Q4 C108Y1 C108Y2
Contextual Info: DIGITRON ELECTRONIC CORP R e fe r e n c e J fb , 3hE D EflMEbD? a a D o a m 3 DGE $ A 6 TTY'2'3 O 0 3 Silicon Controlled Rectifier y T - J 5-/5 Flat Pack Design I,*»?,.rt M o d e l C 10 8 Up to 600 Volts 5 Amperes RM$j MAXIMUM ALLOW ABLE RATINGS c ía s

C107

Abstract: SK 1117 11 ak 30 a4 C1071 "Silicon Controlled Rectifier" ME 1117 C-107
Contextual Info: DIGITRON ELECTRONIC CORP R e fe re n ce No. 3t,E D Xrê_1?:'é DGE SA-0.1-TY2 3 f O Q ,B i' y o "° 3 Silicon Controlled Rectifier cV Flat PackDesign 5 • Model C107 Up to 600 Volts 4 Amperes RMS C107 M A X IM U M A LLO W A BLE R A T IN G S R epetitive P eak O ff-Stale

N07A

Abstract: C107 digitron
Contextual Info: DIGITRON ELECTRONIC CORP R e f e r e n c e No. afiMStiD? GD0DD13 1 • DGE 3bE D TVS-if fo o ,a SAG.1TVÏ2 3 ;r . i' O - 0 3 w / Silicon Controlled Rectifier 'J w Flat Pack Design * Model C107 Up to 600 Volts 4 Amperes RMS CIO 7 M A X IM U M A L L O W A B L E R A T IN G S

C106F2

Abstract: C106Y1 C106MI C106D1 c106f C106F1 C106Q1 C106M3 C106D2 C106Y4
Contextual Info: TjlGITRON ELECTRONIC CORP 3bE D • SflMgbO? □O DO Oi a~ T DGE _T’£ 5>/?_ R e f e r e n c e No. 'sÄ'0^ir.Y23 ■ .O - Silicon Controlled Rectifier r* gf o' Flat Pack Design V-'S Op to 600 Volts 4 Amperes RMS M A X IM U M C106 J 'Tj, Model C106 -u U W A B L E R A T IN G S

Contextual Info: a Am7990 Local Area Network Controller for Ethernet LANCE Advanced Micro Devices DISTINCTIVE CHARACTERISTICS C om patible w ith Ethernet and IEEE-802.3 10Base5 Type A, and 10Base2 Type B, "C h e a p e rn e t") Easily interfaced to 8086, 68000, Z 8 0 0 0 , LSI-M™

Contextual Info: APR 2 2 19« 57, SGS-THOMSON IMS 1635 • y 8K X 8 CMOS SRAM VERY HIGH SPEED DOUBLE METAL CM OS SRAM ADVANCED PR O C ESS- 1.2 MICRON DESIGN RULES 8 K x 8 BIT ORGANISATION 15, 20, 25, 35ns ADDRESS ACCESS TIMES 15, 20, 25, 35ns CHIP ENABLE ACCESS TIMES 28 FULLY TTL COMPATIBLE