DG75 Search Results

Contextual Info: DG758BX45 DG758BX45 Gate Turn-off Thyristor Replaces March 1998 version, DS4095-5.3 DS4095-6.0 January 2000 APPLICATIONS KEY PARAMETERS ITCM 3000A VDRM 4500V IT AV 870A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC).

DG758BX45

Abstract: DG758BX
Contextual Info: DG758BX45 DG758BX45 Gate Turn-off Thyristor DS4095-7 July 2014 LN31734 APPLICATIONS KEY PARAMETERS 3000A ITCM VDRM 4500V 870A IT(AV) dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC). ■ Uninterruptable Power Supplies

Contextual Info: DG758SU45 Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)4.5k V(RRM) Max. (V) I(T) Rated Maximum (A)600± @Temp. (øC) (Test Condition)80 I(TSM) Max. (A)16k¥ @ t(w) (s) (Test Condition) I(GT) Max. (A)3.5 V(GT) Max.(V)1.0 I(H) Max. (A) Holding Current

Contextual Info: GEC PLESSEY Si S E M I C O N D U C T O R S DS4095-5.2 DG758BX45 GATE TURN-OFF THYRISTOR APPLICATIONS KEY PARAMETERS 3000A •t c m V 4500V DBM 870A 1000V/ps di-p/dt 300A/ iS ■ Variable speed A.C. motor drive inverters (VSD-AC . ■ Uninterruptable Power Supplies

60nf

Abstract: C52250
Contextual Info: @ M ITEL DG758BX45 Gate Turn-off Thyristor SEMICONDUCTOR Supersedes March 1995 version, DS4095 - 5.2 DS4095 - 5.3 APPLICATIONS March 1998 KEY PARAMETERS • Variable speed A.C. motor drive inverters VSD-AC . 't c m 3° ° ° A ■ Uninterruptable Power Supplies

Contextual Info: M ITEL DG758BX45 G ate Turn-off T hyristor SEMICONDUCTOR Supersedes March 1995 version, DS4095 - 5.2 DS4095 - 5.3 March 1998 KEY PARAMETERS APPLICATIONS • Variable speed A.C. motor drive inverters VSD-AC . 't c m 3° ° ° A ■ Uninterruptabie Power Supplies

Contextual Info: DG758BX45 DG758BX45 Gate Turn-off Thyristor Replaces March 1998 version, DS4095-5.3 DS4095-6.0 January 2000 APPLICATIONS KEY PARAMETERS 3000A ITCM VDRM 4500V IT AV 870A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC).

GTO 100A 750V

Abstract: 40A GTO thyristor AN4506 AN4839 DG758BX45
Contextual Info: DG758BX45 DG758BX45 Gate Turn-off Thyristor Replaces March 1998 version, DS4095-5.3 DS4095-6.0 January 2000 APPLICATIONS KEY PARAMETERS 3000A ITCM VDRM 4500V 870A IT AV dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC).

D2290

Abstract: DG752 rs 434 RS 5231 MC3446
Contextual Info: TEXAS INSTR -CLIN/INTFO TI DËJ 0^1754 8 961 72 4 TEXAS INSTR <LIN/INTFC> DG75257 9 1 D 75257 7 D T-S2-3} MÜ3446 QUADRUPLE BUS TRANSCEIVER D2290. JANUARY 1977-REVISED SEPTEMBER 1986 D. J . OR N DUAL-IN-LINE PACKAGE Driver Inputs Compatible with TTL and MOS

DG758BX45

Abstract: 300a 1000v thyristor DS4095-6
Contextual Info: DG758BX45 DG758BX45 Gate Turn-off Thyristor Replaces March 1998 version, DS4095-5.3 DS4095-6.0 January 2000 APPLICATIONS KEY PARAMETERS 3000A ITCM VDRM 4500V IT AV 870A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC).

DG758BX

Abstract: thyristor 830A DG758BX45
Contextual Info: DG758BX45 DG758BX45 Gate Turn-off Thyristor Replaces March 1998 version, DS4095-5.3 DS4095-6.0 January 2000 APPLICATIONS KEY PARAMETERS 3000A ITCM VDRM 4500V IT AV 870A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC).

eprom 27C512 28pin

Contextual Info: F IN A L A Am27C512 M D i l 512 Kilobit 64 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vc c + 1 V ■ Fast access time — Speed options as fast as 55 ns ■ High noise immunity ■ Low power consumption

028-28-Pin

Contextual Info: AMDH Am27X512 512 Kilobit 64 K x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed ■ As a Mask ROM alternative: — Shorter leadtime — Lower volume per code

Contextual Info: FINAL AMD£1 Am27X64 64 Kilobit 8 K x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ ±10% power supply tolerance — Factory optim ized program m ing ■ High noise immunity — Fully tested and guaranteed

Contextual Info: AMD£1 ADVANCE INFORM ATION Am29F004B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ 5.0 Volt single power supply operation ■ Top or bottom boot block configurations available — Minimizes system-level power requirem ents

AM29F01OA-45

Contextual Info: AMDZ1 Am29F010A 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations Embedded Algorithms — Embedded Erase algorithm automatically

11419E-1

Abstract: 11419E-2
Contextual Info: AMDH Am27C64 64 Kilobit 8 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V — Speed options as fast as 45 ns ■ High noise immunity ■ Versatile features for simple interfacing

Contextual Info: AMD3 Am27X256 256 Kilobit 32 K x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed ■ As a Mask ROM alternative: — Shorter leadtime — Lower volume per code

dg7-5

Abstract: db75 potentiometres
Contextual Info: 15' MINIWATT-DARIO t-* V DB7-5 - DG7-5 •DR7-5 139-14S m&x. 160 TUBES f,k n f. f\P9 6 7 $O, ah s g ai a2 ÉLECTROSTATIQUES DE POUR OSC1LLOGRAPHIE 7 cm ¿ J' 3 7 -5 C A R A C T E R I S T I Q U E S D ’U T I L I S A T I O N MODE D ’A T T A Q U E Les tubes d e cette série ont leurs deux paires

AM27X020

Contextual Info: FINAL Am27X020 2 Megabit 256 K x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • ±10% power supply tolerance ■ As an OTP EPROM alternative: ■ High noise immunity ■ Low power dissipation — Factory optimized programming — Fully tested and guaranteed

Contextual Info: ANALOG DEVICES FEATURES High Off Isolation -7 5 dB at 100 MHz -3 dB Signal Bandwidth 300 MHz +1.8 V to +5.5 V Single Supply Low On-Resistance 15 il Fast Switching Times toN Typically 9 ns toFF Typically 3 ns Typical Power Consumption <0.01 (jiW TTL/CM O S Com patible

Contextual Info: GDU 90 20302 JULY 1996 DS4563 - 2.3 GDU 90 20302 GATE DRIVE UNIT This data sheet should be used in conjuction with the publication entitled GDU9X-XXXXX Series, Gate Drive Unit. KEY PARAMETERS APPLICATIONS IFGM IG ON dIGQ/dt • Used with Gate Turn-Off Thyristors in high current switching

Contextual Info: AMD£1 FINAL A m 27X 128 128 Kilobit 16 K x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ ±10% power supply tolerance — Factory optim ized program m ing ■ High noise immunity — Fully tested and guaranteed

Contextual Info: PRELIMINARY m r*% AM D Am7920 y m Subscriber Line Interface Circuit The Am7920 Subscriber Line Interface Circuit implements the basic telephone line interface functions, and enables the design of low cost, high performance, POTS line interface cards. DISTINCTIVE CHARACTERISTICS