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    DG2E Search Results

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    TE Connectivity

    TE Connectivity BACS13DG2E

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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    FDH Electronics BACS13DG2E 1
    • 1 $7.75
    • 10 $7.75
    • 100 $7.75
    • 1000 $6.60
    • 10000 $5.34
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    DG2E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 3DE D NEC • fcj4E7555 DG2ei4SÖ S ■ ELECTRONICS INC LIG HT E M ITTIN G DIODE NDL5314P 1 300 nm O P T IC A L F IB ER C O M M U N IC A T IO N S InGaAsP DOUBLE HETEROSTRUCTURE LED M O DULE DESCRIPTION N D L 5 3 1 4 P is a 1 300 nm InGaAsP double heterostructure L E D with fiber pigtail. It is designed for high speed optical data


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    fcj4E7555 NDL5314P PDF

    Contextual Info: Ordering number :EN5636A Monolithic Linear 1C mlml LA7565B, 7565BM IF Signal-Processing 1C for PAL/NTSC Multi-System Audio TV and VCR Products Overview The LA 7565B/M is a PAL/NTSC m ulti-system audio VIF/SIF signal-processing IC that adopts a m inim al­


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    EN5636A LA7565B, 7565BM 7565B/M LA7565BM 005S347 PDF

    Contextual Info: MITSUBISHI ICs VCR M51646SP/GP SECAM CHROMA PROCESSOR DESCRIPTION The M 51646 for VHS SECAM VCRs divides color signal PIN CONFIGURATION (TOP VIEW) frequencies by four for recording, and multiplies them by four for playback. FEATURES • Color signals are divided and m ultiplied by 4, in a high


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    M51646SP/GP PDF

    TB531

    Abstract: m1573 BYW92 BYW92-50
    Contextual Info: N AMER P H IL IP S /D IS C R E T E 5SE D • ^53= 131 0U 2577S II MAINTENANCE TYPE y 4 ■ BYW92 SERIES y r - o s - i^ ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low


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    002577S ABYW92 BYW92â M1246 bti53cà BYW92 T-03-19 M1578 bbS3131 TB531 m1573 BYW92-50 PDF

    Contextual Info: TOSHIBA 4 ÔE L06IC/NEH0RY •=10=17240 D G S 5 D 7 S D ■lit! 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM PRELIMINARY DESCRIPTION The TC518129A-LV Fam ily is a 1M bit high speed CMOS Pseudo Static RAM organized a s 131,072 w ords b y 8 bits. The TC518129A-LV fam ily utilizing one transistor dynamic m em ory cell w ith CMOS


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    L06IC/NEH0RY TC518129A-LV TC518129APL/AFL/AFWLâ -10LV, -12LV TC518129AFTL/ATRLâ PDF

    Contextual Info: O K I Semiconductor KGF1637_ Plastic GaAs Power FET for FM and FDMA Cellular Applications DESCRIPTION The KGF1637 is a high power, high efficiency GaAs power FET that features high gain at high current w ith ultra low im pedance drive required for cellular, ISM, PH S and PCS applications. This device is


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    KGF1637_ KGF1637 OT-89 b72424D KGF1637 h72424D b72MBM0 PDF

    AM27C256

    Abstract: AM27C256-55 AM27C256-70 AMD 27C256 255
    Contextual Info: ADV MI CRO ME MOR Y 3 ÖE 0 • Ü5S7S2Ö ODSTMSÖ 0 ■ AMD4 '- * 4 6 - 1 2 - 2 ? Advanced Micro Devices Am27C256 32,768 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ ■ ■ Fast access tlme-S5 ns Low power consumption: -100 nA maximum standby current


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    Am27C256 ttme-55 128K-b 02S752Ã 003Q2bb AM27C256-55 AM27C256-70 AMD 27C256 255 PDF