DG037 Search Results

Transistor 10A 60v

Abstract: DG037ST SOLITRON 44SE137 BUY58 T-13 44SE 45WATT SOLITRON DEVICES
Contextual Info: SOLITRON DEVICES INC 4fiE ]> 03bfibOE DG037ST TIT H S O D T-13~l3~CO -Polltron Devices, Inc. BUY58 CHANGED TO 44SE137 Type- NPN SILICON POWER 1 TRANSISTOR C A S E : TO-3 NO.: S P E C I F I C A T I O N S MAXIMUM R A TIN G S 270 Voltage, Collector to Base V CB0

2N2907

Abstract: transistor BR 471 A
Contextual Info: ALLEGRO MICROSYSTEMS INC T3 » 0SGM33Ô DG037D1 1 • ALGR T-91-01 PROCESS JFA Process JFA PNP Small-Signal Transistor Process JFA is a double-diffused PN P silicon epi­ taxial planar device for low-noise, high-gain ampli­ fiers, medium-power switching, and general-purpose

Contextual Info: LF2249 12 x 12-bit Digital Mixer DEVICES INCORPORATED FEATURES _ □ 40 MHz Data and Computation Rate □ Two 12 x 12-bit Multipliers with Individual Data Inputs □ Separate 16-bit Input Port for Cascading Devices □ Independent, User-Selectable 1-16 Clock Pipeline Delay for Each Data

mv50

Abstract: V50B 263-J
Contextual Info: ÖUALITV TEC HNOLOGIES CORP 27E D ? 4 b h a S l QGQ37flS S QUALITY TECHNOLOGIES SUBMINIATURE T-3A SOLID STATE LAMPS 7 • Z .j-f-S .I YELLOW HIGH EFFICIENCY GREEN HIGH EFFICIENCY RED STANDARD RED MV50B HIGH EFFICIENCY RED STANDARD RED MV54B DESCRIPTION PACKAGE DIMENSIONS

Contextual Info: SIE D • Ö13bt>71 DDD37Ö0 ST1 m S E K G s e h ik r ö n T n T SEMIKRDN — Maximum Ratings Symbol Conditions Values Units lc = 1 A, Vbe = - 2 V 600 V VcEV V be = - 2 V 600 V VcBO Ie = 0 600 V VcEVsus V ebo lc = 0 7 V lc D. C. 30 A ICM If = - lc tP = 1 ms

Contextual Info: HY62V256B Series -H Y U N D A I 32K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62V256B is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. The HY62V256B has a data retention mode that guarantees

bq4025

Abstract: bq4025Y 137001
Contextual Info: bq4025/bq4025Y t j BENCHMARQ 256Kx16 Nonvolatile SRAM Features General Description >• D ata retention in th e absence of power T he CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 2 6 2 ,1 4 4 w o rd s b y 16 b its . T h e integral control circuitry and lithium

GM5BW95310A

Abstract: 5819 DIODE 13B1
Contextual Info: PRODUCT DOCUMENTATION Sharp Optoelectronic Components GM5BW95310A Light Emitting Diode Issue Date: August 3, 2005 No: DG-037012 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications if any are for standard use; See Important Restrictions for limitations on special applications. See Limited

Contextual Info: PHILIPS E C G INC 17E Ù • ^ 5 3 1 5 0 00037=17 5 E C G 1 0 3 2 1W OTL AUDIO POWER AMPLIFIER s e m ic o n d u c to rs M A X IM U M POW ER ABSO LU TE D IS S IP A T IO N M A X IM U M Sym bol CURVE R A T IN G S T a - 2 5 t î (D im e n sio n s in m m ' R jtiof

V53C664H

Abstract: mosel MT
Contextual Info: MOSEL VITELIC V53C664H 6 4 K x 16 B IT F A S T P A G E M O D E B Y TE W RITE CM OS D YN A M IC R A M V53C664H 50 55 60 Max. RAS Access Time, tRAC 50 ns 55 ns 60 ns Max. Column Address Access Time, (tCAA) 26 ns 28 ns 30 ns Min. Fast Page Mode Cycle Time, (tpc)

1D200A020

Abstract: 2SB1532 2SB862 2SD1117 2SD1157 2SD847 ETN35-030 T367
Contextual Info: MOLD TYPE BIPOLAR TRANSISTORS Ratings and Specifications 11 General use transistors • Can be a v a ila b le to general a p p lic a tio n s • D e sig n e d fo r c o m p le m e n ta ry use Devicu type VcBO V ceo V i» : le Pc sus) cont. Volts Am ps. W atts

Contextual Info: Novem ber 1990 PRELIM INARY ^ . . ML4415, ML4415R ML4416 ML4416R Micro Linear 15 Channel Read/Write Circuit GENERAL DESCRIPTION FEATURES Th e ML4415, ML4416 d evices are bipolar m onolithic read/write circuits designed for use w ith fixed disk ferrite center-tapped recording heads. Th ey provide a