DF20J Search Results

Contextual Info: 5 /a s /h *- AUT' S H ^ - h Schottky Barrier Diode OUTLINE DIMENSIONS DF20JC10 Unit • mm Packag e I STO -220 -I n 9 ±0.5 nyH B-^ W 100V 20A >SMD US Ir = 0.7 m A n m xm z a m m ► y - h P C , LC D (2 )@ (D > D C /D C D y n - S ’ RATINGS Absolute Maximum Ratings

Contextual Info: Schottky Barrier Diode Twin Diode mwm DF20JC10 o u t lin e 100V 20A Feature • SM D ' SM D • filR=0.7mA 1 Low lR=0.7mA • i» # î ê « b c u : < U 1 Resistance for thermal run-away • /J v 3 ü * * 3 i B 1 High lo R ating-Sm all-PK G Main Use • ^ -S P C -L C D ^ -^ ^

DF20JC10

Contextual Info: SHINDENGEN Shottky Rectifiers SBD DF20JC10 100V 20A Dual OUTLINE DIMENSIONS Case : STO-220 Unit : mm FEATURES 1. Low IR 2. Avoid thermal runaway 3. Available in the STO-220 lead type and surface mount type APPLICATION 1. Secondary rectifiers in notebook PC,

DF20JC10

Contextual Info: SHINDENGEN Shottky Rectifiers SBD DF20JC10 Dual OUTLINE DIMENSIONS Case : STO-220 Unit : mm 100V 20A FEATURES 1. Low IR 2. Avoid thermal runaway 3. Available in the STO-220 lead type and surface mount type APPLICATION 1. Secondary rectifiers in notebook PC,

d 132 smd diode

Contextual Info: Schottky Barrier Diode Twin Diode M fm OUTLINE Package : STO-220 DF20JC10 Unit-mm Weight 1.5g Typ 10.2 100V 20A Feature • SMD • <SlR=0.7mA • SMD • S iy R T È Î E iË c I l_y (<_ <L U'' • Resistance for thermal run-away • High lo Rating-Small-RKG

hm marking smd DIODE

Abstract: DF20JC10 TC121 SHINDENGEN DIODE DIODE marking VU
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF20JC10 o u tlin e 100V 20A Feature • SM D • SMD • filR = 0 .7 m A • L o w lR =0.7m A • jw is æ ç ë c u ic < L ' • Resistance for thermal run-away • High lo Rating -Small-PKG • y -S P C .L C D t-^ ^

7555-T

Abstract: M1FM3
Contextual Info: Al t hough we ar e cons t ant l ymak i ng ev er yef f or tt oi mpr ov et he qual i t yand r el i abi l i t yofourpr oduct s ,t her enev er t hel es sr emai nsacer t ai npr obabi l i t yt hatt he s emi conduct orpr oduct smayoccas i onal l yf ai lormal f unct

F30S

Contextual Info: Schottky Barrier Diodes High frequ e n cy rectifyin g A bsolute M axim um R atings Type No. D F30S C 3M L E lectrical C haracteristics Conditions If Ir m ax V r=V rm (typ) B jc (max) [V] [A] [mA] [pF] [°C/W ] 0.45 12.5 0.55 15 V rm lo Conditions Tc Ifsm

df40sc4

Contextual Info: Surface-Mount Devices Schottky Barrier Diodes Single M1F Absolute M axim um Ratings Type No. lo [V] [A] [°C /W ] [°C/W ] 1.1 1 23 108 - 1.6 2 2.5 0.58 24 90 - 0.58 3 2.5 — 5 5 — 150 150 1.5 31*2 3 8 7 *1 80 12 1 70 3 30 60 6M 60 117 80 40 101 80 6M

DF30SC4M

Abstract: df20jc10 DF10SC9 df20j
Contextual Info: Schottky Barrier Diodes High frequency rectifying Two Terminal Type , Type No. V rm .M ☆ SF20H1R5 ☆SF30H1R5 S5S4M D5S4M SF5S4 D5S6M SF5S6 D5S9M . 15 40 60 90 lo Concilions Tc Ifsm [A] [°C] [A] 20 30 5 5 5 5 5 5 97 89 138 131 136 130 134 121 250