DEVICE MARKING CODE TABLE JS Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel

JS SOT23-3

Abstract: sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT-23 3 CATHODE 1 ANODE SC-88A

BAS19LT1

Abstract: sot-23 MARKING CODE JS BAS19 BAS20 BAS20LT1 BAS21 BAS21LT1 SOT23 Marking JX marking 556c
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol

APM2702

Abstract: APM2702CG STD-020C APM27
Contextual Info: APM2702CG Load Switch with Level-Shift Pin Description Features • -12V/±3A, RDS ON =45mΩ (typ.) @ VGS=-4.5V RDS(ON)=60mΩ (typ.) @ VGS=-2.5V RDS(ON)=82mΩ (typ.) @ VGS=-1.8V • • Low Forward Voltage Lead Free Available (RoHS Compliant) Top View of JSOT-6

Contextual Info: APM2702CG Load Switch with Level-Shift Pin Description Features • -12V/±3A, RDS ON =45mΩ(typ.) @ VGS=-4.5V RDS(ON)=60mΩ(typ.) @ VGS=-2.5V RDS(ON)=82mΩ(typ.) @ VGS=-1.8V • • Low Forward Voltage Lead Free Available (RoHS Compliant) Top View of JSOT-6

APM9984C

Abstract: APM9984CCG STD-020C
Contextual Info: APM9984CCG N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/6A , RDS ON =16mΩ(typ.) @ VGS=4.5V RDS(ON)=19mΩ(typ.) @ VGS=2.5V • • • • Super High Dense Cell Design Top View of JSOT-8 Reliable and Rugged ESD Rating : 2KV HBM (8)

si504

Contextual Info: Si 5 04 A N Y - F REQUENCY 32 K H Z –100 M H Z CMEMS O SCILLATOR Features       Wide frequency range: 32 kHz to 100 MHz Contact Silicon Labs for frequencies above 100 MHz ±20/30/50 ppm frequency stability including 10-year aging

BAS19

Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol

Si502

Contextual Info: Si501/2/3 3 2 K H Z –100 MH Z CMEMS  O SC ILLA TOR Features          Wide frequency range: 32 kHz to 100 MHz Contact Silicon Labs for frequencies above 100 MHz Si501 single frequency w/ OE Si502 dual frequency w/ OE/FS

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Diodes VBUS54ED-FBL ESD-Protection Bus Port Array KEY BENEFITS • • • • Low load capacitance of 0.6 pF Low maximum leakage current of < 0.1 µA at the working voltage of 5.5 V Ultra-compact LLP2510 package

Thunderbolt port

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . I INNOVAT AND TEC O L OGY VBUS54ED-FBL N HN Diodes O 19 62-2012 Diodes - ESD Performance in LLP Package ESD-Protection Bus Port Array KEY BENEFITS • • • • Low load capacitance of 0.6 pF Low maximum leakage current of < 0.1 µA at the working voltage of 5.5 V

si504

Abstract: Si502
Contextual Info: Si501/2/3 3 2 K H Z –100 MH Z CMEMS  O SC ILLA TOR Features          Wide frequency range: 32 kHz to 100 MHz Contact Silicon Labs for frequencies above 100 MHz Si501 single frequency w/ OE Si502 dual frequency w/ OE/FS

m2703

Abstract: Q265 TR-01 APM2703CG STD-020C APM2703 apm27
Contextual Info: APM2703CG Load Switch with Level-Shift Pin Description Features • -12V/±4A, RDS ON =25mΩ (typ.) @ VGS=-4.5V RDS(ON)=35mΩ (typ.) @ VGS=-2.5V RDS(ON)=50mΩ (typ.) @ VGS=-1.8V • • Low Forward Voltage Lead Free Available (RoHS Compliant) Top View of JSOT-6

APM2702CG

Abstract: APM2702 A102 STD-020C marking CODE 001 apm27
Contextual Info: APM2702CG Load Switch with Level-Shift Pin Description Features • -12V/±3A, RDS ON =45mΩ (typ.) @ VGS=-4.5V RDS(ON)=60mΩ (typ.) @ VGS=-2.5V RDS(ON)=82mΩ (typ.) @ VGS=-1.8V • • Low Forward Voltage Lead Free Available (RoHS Compliant) Top View of JSOT-6

CD61000-4-2

Abstract: VBUS54ED-FBL-G4-08 IS61000-4-2
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . I INNOVAT AND TEC O L OGY VBUS54ED-FBL N HN Diodes O 19 62-2012 Diodes - ESD Performance in LLP Package ESD-Protection Bus Port Array KEY BENEFITS • • • • Low load capacitance of 0.6 pF Low maximum leakage current of < 0.1 µA at the working voltage of 5.5 V

RJ 000002 gel

Contextual Info: SHARP REFERENCE SPEC No. ISSUE: E L 0 9 X 0 9 8 Oct 14 1997 To ; S P E C I F I C A T I O N S Product Type_ 1 6 M b i t F l a s h M e m o r y _ L H 2 8 F 0 1 6SCHB-L95 Mo d e l No. L H F 1 6 C 1 3 jStThis s p e c ific a tio n s contains 47 pages including the cover and appendix.

Contextual Info: SHARP SPEC No. ISSUE EL 101072 Apr 2 1998 To ; R s< t i -s- ~\ T 3J S P E C I F I C A T I O N S Product Type 32Mbi t F l a s h M e m o r y _ L H 2 8 F 3 2 0 S 5 H B —L 9 0 Mode l No. LHF 3 2 K 1 6 jSThis specifications contains 53 pages including the cover and appendix.

STD-020C

Abstract: APM2803 APM2803CG
Contextual Info: APM2803CG P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features D MOSFET NC • -20V/-1.5A, C RDS ON =145mΩ(typ.) @ VGS=-4.5V G RDS(ON)=180mΩ(typ.) @ VGS=-2.5V • • • S A Super High Dense Cell Design Reliable and Rugged Top View of JSOT-6

APM2802CG

Abstract: APM2802 STD-020C
Contextual Info: APM2802CG N-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features D MOSFET NC • C 20V/3A, RDS ON =50mΩ(typ.) @ VGS=4.5V G S RDS(ON)=80mΩ(typ.) @ VGS=2.5V • • • A Super High Dense Cell Design Reliable and Rugged Top View of JSOT-6

GEM2928

Contextual Info: APM2802CG N-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features D MOSFET • NC C 20V/3A, G RDS ON =50mΩ(typ.) @ VGS=4.5V S RDS(ON)=80mΩ(typ.) @ VGS=2.5V • • • A Super High Dense Cell Design Reliable and Rugged Top View of JSOT-6

APM2901CG

Abstract: GEM2928 APM2901 diode MARKING CODE CG M2901
Contextual Info: APM2901CG P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-10A, D RDS ON = 9mΩ(typ.) @ VGS= -4.5V D D D G S S RDS(ON)= 12.5mΩ(typ.) @ VGS= -2.5V S RDS(ON)= 18mΩ(typ.) @ VGS= -1.8V • • • Super High Dense Cell Design Top View of JSOT-8

APM2803

Abstract: APM2803CG STD-020C
Contextual Info: APM2803CG P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features D MOSFET NC • -20V/-1.5A, C RDS ON =145mΩ(typ.) @ VGS=-4.5V G RDS(ON)=180mΩ(typ.) @ VGS=-2.5V • • • S A Super High Dense Cell Design Reliable and Rugged Top View of JSOT-6

apm2701

Abstract: APM2701CG STD-020C sot-23-6 n-channel mosfet
Contextual Info: APM2701CG Dual Enhancement Mode MOSFET N and P-Channel Pin Description Features • Top View N-Channel 20V/3A, • G1 1 6 D1 RDS(ON)=50mΩ(typ.) @ VGS=4.5V S2 2 5 S1 RDS(ON)=90mΩ(typ.) @ VGS=2.5V G2 3 4 D2 P-Channel -20V/-1.5A, JSOT-6 Top View of JSOT-6

si5162

Abstract: SI510 Si516
Contextual Info: Si 5 16 D U A L F REQUENCY VOLTAGE - C ON TROLLED C R YS TA L O SCILLATOR V C X O 1 0 0 k H Z T O 250 MH Z Features        Supports any frequency from 100 kHz to 250 MHz Two selectable output frequencies Low-jitter operation Short lead times: <2 weeks