DEVICE MARKING CODE SOT23-5 MOSFET Search Results

MOSFET TRANSISTOR SMD MARKING CODE

Abstract: MOSFET marking smd
Contextual Info: Comchip MOSFET SMD Diode Specialist CJ3404-HF N-Channel Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -N-Channel -Enhancement mode field effect transistor. -Use advanced trench technology to provide

Contextual Info: Product specification DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

BSS127S

Abstract: K29 mosfet BSS127 K28 SOT23
Contextual Info: BSS127 Green N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C 600V 160Ω @ VGS = 10V SC59 SOT23 70mA • • • • • Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage

Contextual Info: Product specification DMG3420U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary 20V • Low On-Resistance RDS ON max ID max TA = +25°C • Low Input Capacitance • Fast Switching Speed 21mΩ @ VGS = 10V 6.5A • Low Input/Output Leakage 25mΩ @ VGS = 4.5V

DS30149

Abstract: BSS84 BSS84 Equivalent BSS84Q-7-F BSS84 MARKING CODE
Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

Contextual Info: Product specification DMP3160L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25°C • Low On-Resistance  Low Gate Threshold Voltage 122m @ VGS = -10V -2.7A  Low Input Capacitance 190m @ VGS = -4.5V -2.0A  Fast Switching Speed

Contextual Info: Product specification DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V Low VGS(th), can be driven directly from a battery

Contextual Info: Product specification DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V 1.0A @ TA = 25°C

Contextual Info: Product specification DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: Product specification DMP2130L P-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • Mechanical Data • • Low RDS ON : • 75 mΩ @VGS = -4.5V • 110 mΩ @VGS = -2.7V • 125 mΩ @VGS = -2.5V Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant

Contextual Info: Product specification DMN2230U N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • Low On-Resistance • 110 mΩ @ VGS = 4.5V • 145 mΩ @ VGS = 2.5V • 230 mΩ @ VGS = 1.8V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

BSS123Q-13

Abstract: DS30366 bss123 c23 K23 SOT23 K23 mOSFET BSS123Q-7
Contextual Info: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating

MARKING 2N4 SOT-23

Abstract: sot-23 Marking 2n4
Contextual Info: Product specification DMG6968U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 25mΩ @ VGS = 4.5V • 29mΩ @ VGS = 2.5V • 36mΩ @ VGS = 1.8V Low Input Capacitance Fast Switching Speed

SOT23 PAB

Contextual Info: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) max Features • • • • • • • • • ID TA = +25°C Package -430mA 0.9Ω @ VGS = -4.5V SOT23 -20V -150mA 2.0Ω @ VGS = -1.8V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

sot-23 body marking DAB

Abstract: DMN5L06KQ-7
Contextual Info: DMN5L06K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 2.0Ω @ VGS = 5.0V 300 mA 2.5Ω @ VGS = 2.5V 200 mA V(BR)DSS ADVANCE INFORMATION Features and Benefits • • • • • • • • • 50V Description and Applications Low On-Resistance

Contextual Info: Product specification DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits • • • • • • • • ID RDS(on) max TA = 25°C 31mΩ@ VGS = -4.5V 5.2A 45mΩ@ VGS =-2.5V 4.3A -12V Low On-Resistance Low Input Capacitance Fast Switching Speed

K23 mOSFET

Abstract: K23 mOSFET DIAGRAM DS30366
Contextual Info: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating

2N7002K-7

Abstract: 2N7002KQ-7 2N7002K1
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"

2n7002k EQUIVALENT

Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"

SOT23 DMB

Contextual Info: Product specification DMP3098L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • • ID RDS on max TA = 25°C 70mΩ@ VGS = -10V -3.8A 120mΩ@ VGS =-4.5V -3.0A -30V • • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

G21 SOT23

Contextual Info: Product specification DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 80mΩ @ VGS = 4.5V -2.7A 110mΩ @ VGS = 2.5V -2.1A V(BR)DSS -20V Features • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed

MARKING C7K

Abstract: 2N7002KQ-13 2N7002K-7
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"

Contextual Info: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max Package -20V 0.9Ω @ VGS = -4.5V 2.0Ω @ VGS = -1.8V SOT23 ID TA = +25°C -430mA -150mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching

2N7002Q

Abstract: equivalent of 2N7002 2N7002-13-F
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed