DEPLETION MOSFET TO220 Search Results

IXTA02N100D2

Abstract: depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2
Contextual Info: Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero VGS=0V .

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

supertex mosfet p-channel TO-220

Abstract: low threshold mosfet p-channel TO-220 p-channel lateral diffused mos N-Channel Depletion-Mode MOSFET high voltage supertex dmos
Contextual Info: M Supertex me. Product Nomenclature / Ordering Information The Supertex DMOS MOSFET family utilizes both vertical and lateral double diffused MOS processes, featuring: High drain-to-source voltage for direct interface to the outside world. • Enhancement-mode and depletion-mode devices available.

Contextual Info: Preliminary Technical Information IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 1.6A 10Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000

Contextual Info: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V

IXTP08N100D2

Abstract: IXTA08N100D2 IXTY08N100D2 08N100 08n10 500VID ixtp08n100 T08N
Contextual Info: Preliminary Technical Information IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V

08N50D

Abstract: IXTY08N50D2
Contextual Info: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 RDS(on) N-Channel = > ≤ 500V 800mA 4.6Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous

IXTY1R6N50D2

Abstract: IXTP1R6N50D2
Contextual Info: Preliminary Technical Information IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 500V 1.6A 2.3Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous

Contextual Info: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 RDS(on) N-Channel = > ≤ 500V 1.6A 2.3Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous

08N50D

Abstract: ixty08n50d2 IXTP08N50D2
Contextual Info: Preliminary Technical Information IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 500V 800mA 4.6Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous

IXTH6N50D2

Abstract: IXTP6N50D2 IXTA6N50D2 6N50D2 IXTP6N50
Contextual Info: Preliminary Technical Information IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 500V 6A 500mΩ Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous

IXTP1R6N100D2

Abstract: IXTY1R6N100D2
Contextual Info: IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 1.6A 10Ω Ω N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings TO-263 AA (IXTA) 1000 V Continuous ±20

IXTH6N100D2

Contextual Info: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V Continuous

08N50

Contextual Info: IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = >  500V 800mA 4.6  TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25C to 150C Maximum Ratings 500 V VGSX Continuous 20 V VGSM Transient

IXTH6N100D2

Abstract: t6n100 IXTA6N100D2 IXTP6N100D2 T6N10 6N100D2 diode 6A 1000v
Contextual Info: Preliminary Technical Information IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V Continuous

Contextual Info: Depletion Mode MOSFET VDSX ID on IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 RDS(on) = > ≤ 1000V 1.6A 10Ω Ω N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings TO-263 AA (IXTA) 1000 V Continuous ±20

Contextual Info: Depletion Mode MOSFET VDSX ID on IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 = > ≤ RDS(on) 500V 6A 550mΩ Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous ±20 V VGSM Transient ±30 V

01N100D

Abstract: 98809b ON 534 TO252 01N1
Contextual Info: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D IXTU 01N100D IXTY 01N100D VDSS = 1000 V ID25 = 100 mA Ω RDS on = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C 1000

IXTP6N50D2

Abstract: IXTH6N50D2 6N50D2 IXTA6N50D2 6n50
Contextual Info: IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 500V 6A 500mΩ Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous ±20 V VGSM Transient ±30 V

6N50D2

Contextual Info: IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 500V 6A 550mΩ Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous ±20 V VGSM Transient ±30 V

02N5

Abstract: IXTP 02N50D
Contextual Info: High Voltage MOSFET N-Channel, Depletion Mode IXTP 02N50D IXTU 02N50D IXTY 02N50D VDSS = 500 V ID25 = 200 mA RDS on = 30 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C 500 V VGS Continuous

3n50d

Contextual Info: Preliminary Technical Information IXTA3N50D2 IXTP3N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 500V 3A 1.5Ω Ω N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ

TO-220AD

Abstract: 02N5 IXTP 02N50D depletion MOSFET
Contextual Info: Advance Technical Information High Voltage MOSFET IXTP 02N50D VDSS ID25 N-Channel, Depletion Mode RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25

Contextual Info: Advance Technical Information IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ