schematics for a PA amplifier
Abstract: MAX2242 APP3249 DECT schematic AN3249
Contextual Info: Maxim/Dallas > App Notes > WIRELESS, RF, AND CABLE Keywords: DECT, Power Amplifier, PA, 1.9GHz, 1905MHz, 1905 MHz, DECT PA, DECT power amplifier May 27, 2004 APPLICATION NOTE 3249 1.9GHz DECT Power Amplifier Delivers +27dBm from 3.6V at 41% PAE The MAX2242 is an ultra-low cost silicon bipolar power amplifier PA with integrated bias-circuitry, logic-level
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1905mhz27dbmmax224229dbm+4schematics for a pa amplifierapp3249dect schematican3249
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draw pin configuration of ic 7400
Abstract: AN96084 BC807 BC858 CGY2030M DTC114YE DECT power philips dect 7.1 power amplifier circuit diagram 4.1 amplifier circuit diagram
Contextual Info: APPLICATION NOTE Application of the CGY2030M power amplifier AN96084 Philips Semiconductors Philips Semiconductors CGY2030M DECT power amplifier Application Note Abstract The CGY2030M is a monolithic GaAs power amplifier for transmission DECT applications.
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cgy2030man96084draw pin configuration of ic 7400bc807+6bc858dtc114yedect powerphilips dect7.1 power amplifier circuit diagram4.1 amplifier circuit diagram
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grm36x7r102k50
Abstract: GRM155F51C104ZA01B GRM155R71C223KA01B M513 MAAPSS0076 MAAPSS0076SMB MAAPSS0076TR-3000 grm36y5v GRM1555C1H1R5CZ01D
Contextual Info: MAAPSS0076 DECT Power Amplifier 1880 - 1930 MHz Rev. V3 Functional Schematic Features • Ideal for DECT Applications • Power Set Pin for Adjustable Output Power High Power Mode: 25.5 dBm Low Power Mode: 17 dBm • Power Gain: 25 dB Typical • Voltage Supply Compensation
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maapss007612-leadgrm36x7r102k50grm155f51c104za01b+6grm155r71c223ka01bm513maapss0076smbmaapss0076tr-3000grm36y5vgrm1555c1h1r5cz01d
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CGY2032TS
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2032TS DECT 500 mW power amplifier Objective specification Supersedes data of 1997 Sep 04 File under Integrated Circuits, IC17 1998 Jun 10 Philips Semiconductors Objective specification DECT 500 mW power amplifier CGY2032TS
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philips dect
Abstract: CGY2032TS
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2032TS DECT 500 mW power amplifier Preliminary specification Supersedes data of 1998 Jun 10 File under Integrated Circuits, IC17 1998 Nov 23 Philips Semiconductors Preliminary specification DECT 500 mW power amplifier CGY2032TS
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cgy2032tsssop16sca60435102/750/03/pp12+1philips dect
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TQFP 44 PACKAGE footprint
Abstract: BC807 BC849C CGY2032BTS SSOP16
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2032BTS DECT 500 mW power amplifier Preliminary specification File under Integrated Circuits, IC17 2000 Mar 14 Philips Semiconductors Preliminary specification DECT 500 mW power amplifier CGY2032BTS FEATURES APPLICATIONS • Power Amplifier PA overall efficiency 55%
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cgy2032bts403506/01/pp12tqfp 44 package footprintbc807+2bc849cssop16
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BC807
Abstract: BC849C CGY2032BTS SSOP16 CGY2032B-CO CGY2032BTS/C1
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2032BTS DECT 500 mW power amplifier Product specification Supersedes data of 2000 Mar 14 File under Integrated Circuits, IC17 2000 Aug 22 Philips Semiconductors Product specification DECT 500 mW power amplifier CGY2032BTS
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cgy2032bts403506/02/pp12bc807bc849c+3ssop16cgy2032b-cocgy2032bts/c1
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M513
Abstract: MAAPSS0113 MAAPSS0113SMB MAAPSS0113TR-3000 Dropping Diode
Contextual Info: MAAPSS0113 DECT Power Amplifier 1880 - 1930 MHz M/A-COM Products Rev. V1 Features • Ideal for DECT Applications • Power Set Pin for Adjustable Output Power High Power Mode: 25 dBm Low Power Mode: 15 dBm • Power Gain: 25 dB Typical • Voltage Supply Compensation
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maapss011312-lead12-leargetm513+3maapss0113smbmaapss0113tr-3000dropping diode
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GRM155F51C104ZA01B
Abstract: GRM155R71C223KA01B GRM36X7R102K50 M513 MAAPSS0076 MAAPSS0076SMB MAAPSS0076TR-3000 GRM36cog DECT telephone schematic
Contextual Info: RoHS Compliant DECT Power Amplifier 1880 - 1930 MHz MAAPSS0076 V3 Features Functional Schematic • Ideal for DECT Applications • Power Set Pin for Adjustable Output Power High Power Mode: 25.5 dBm Low Power Mode: 17 dBm • Power Gain: 25 dB Typical • Voltage Supply Compensation
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maapss007612-leadgrm155f51c104za01bgrm155r71c223ka01b+6grm36x7r102k50m513maapss0076smbmaapss0076tr-3000grm36cogdect telephone schematic
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GRM155F51C104ZA01B
Abstract: GRM155R71C223KA01B GRM36X7R102K50 M513 MAAPSS0076 MAAPSS0076SMB MAAPSS0076TR-3000
Contextual Info: RoHS Compliant DECT Power Amplifier 1880 - 1930 MHz MAAPSS0076 V1 Features Functional Schematic • Ideal for DECT Applications • Power Set Pin for Adjustable Output Power High Power Mode: 25.5 dBm Low Power Mode: 17 dBm • Power Gain: 25 dB Typical • Voltage Supply Compensation
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schematics for a PA amplifier
Abstract: BC807 BC858 CGY2030M SSOP16 CGY20
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2030M DECT 500 mW power amplifier Product specification Supersedes data of 1996 Jul 12 File under Integrated Circuits, IC17 1997 Jan 17 Philips Semiconductors Product specification DECT 500 mW power amplifier CGY2030M FEATURES
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cgy2030mssop16packag31sca53+5437027/1200/03/pp12schematics for a pa amplifierbc807bc858cgy20
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CGY2032TS
Abstract: philips rf manual TQFP 44 PACKAGE footprint BC807 BC849C SSOP16
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2032TS DECT 500 mW power amplifier Product specification Supersedes data of 1998 Nov 23 File under Integrated Circuits, IC17 1999 Jul 21 Philips Semiconductors Product specification DECT 500 mW power amplifier CGY2032TS FEATURES
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cgy2032ts465008/04/pp12philips rf manualtqfp 44 package footprint+3bc807bc849cssop16
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grm36x7r102k50
Abstract: GRM1555C1H1R5CZ01D grm36y5v GRM155F51C104ZA01B GRM155R71C223KA01B M513 MAAPSS0076 MAAPSS0076SMB MAAPSS0076TR-3000 ERJ-2RKF4020X
Contextual Info: RoHS Compliant DECT Power Amplifier 1880 - 1930 MHz MAAPSS0076 V2 Features Functional Schematic • Ideal for DECT Applications • Power Set Pin for Adjustable Output Power High Power Mode: 25.5 dBm Low Power Mode: 17 dBm • Power Gain: 25 dB Typical • Voltage Supply Compensation
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maapss007612-leadgrm36x7r102k50grm1555c1h1r5cz01d+7grm36y5vgrm155f51c104za01bgrm155r71c223ka01bm513maapss0076smbmaapss0076tr-3000erj-2rkf4020x
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DECT telephone schematic
Contextual Info: DECT Power Amplifier 1880 - 1930 MHz Preliminary V2P MAAPSS0071 Lead Free Features • • • • • • • • Functional Schematic Ideal for DECT Applications Saturated Output Power: +26 dBm Typical Power Gain: 26 dB Typical Low Current: 400 mA at PSAT
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CGY2032TS
Abstract: SSOP16 SSOP20
Contextual Info: Philips Semiconductors Objective specification DECT 500 mW power amplifier CGY2032TS FEATURES APPLICATIONS • Power Amplifier PA overall efficiency 50% • 1.88 to 1.9 GHz transceivers for DECT applications • 27 dBm saturated output power • 2 GHz transceivers (PHS, DCS and PCS).
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ntp 3000
Abstract: DECT telephone schematic GRM155F51C104ZA01B GRM1555C1H3R0CZ01B GRM1555C1H1R0CZ01B GRM155R71C223KA01B M513 MAAPSS0071 MAAPSS0071SMB MAAPSS0071TR-3000
Contextual Info: RoHS Compliant DECT Power Amplifier 1880 - 1930 MHz MAAPSS0071 V2 Features • • • • • • • • • • • Functional Schematic Ideal for DECT Applications Saturated Output Power: +26 dBm Typical Power Gain: 26 dB Typical Low Current: 400 mA at PSAT
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maapss007112-leadntp 3000dect telephone schematic+7grm155f51c104za01bgrm1555c1h3r0cz01bgrm1555c1h1r0cz01bgrm155r71c223ka01bm513maapss0071smbmaapss0071tr-3000
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RK73B1ET470J
Abstract: ntp 3000 RK73B1ET101J GRM1555C1H1R0CZ01B GRM1555C1H3R0CZ01B GRM155R71C223KA01B M513 MAAPSS0071 MAAPSS0071SMB MAAPSS0071TR-3000
Contextual Info: MAAPSS0071 DECT Power Amplifier 1880 - 1930 MHz Rev. V3 Features • • • • • • • • • • • • Functional Schematic Ideal for DECT Applications Saturated Output Power: +26 dBm Typical Power Gain: 26 dB Typical Low Current: 400 mA at PSAT
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maapss007112-leadrk73b1et470jntp 3000+7rk73b1et101jgrm1555c1h1r0cz01bgrm1555c1h3r0cz01bgrm155r71c223ka01bm513maapss0071smbmaapss0071tr-3000
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LMX4168
Abstract: SC144XX DECT Transceiver AN-1187 LMX4168FLQ LQA044AF 864kHz
Contextual Info: March 2004 LMX4168 Radio Transceiver for DECT 1.0 General description 2.0 Features The LMX4168 is a radio transceiver integrated circuit optimized for the Digital Enhanced Cordless Telecommunications DECT system. The transceiver, when combined with a power amplifier and a Tx/Rx switch, implements a complete DECT radio transceiver compliant with the ETSI
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DECT telephone schematic
Contextual Info: LEAD FREE DECT Power Amplifier 1880 - 1930 MHz MAAPSS0071 V1 Features • • • • • • • • • • • Functional Schematic Ideal for DECT Applications Saturated Output Power: +26 dBm Typical Power Gain: 26 dB Typical Low Current: 400 mA at PSAT
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Contextual Info: MAAPSS0071 DECT Power Amplifier 1880 - 1930 MHz Rev. V3 Features • • • • • • • • • • • • Functional Schematic Ideal for DECT Applications Saturated Output Power: +26 dBm Typical Power Gain: 26 dB Typical Low Current: 400 mA at PSAT
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ITT2205AF
Abstract: 1008CS j438
Contextual Info: 3.6V 0.5W RF Power Amplifier IC for DECT ITT2205AF Applications Features • • • • • • • DECT PCS Personal Wireless Telephony PWT Cordless PBX Radio/Wireless Local Loop (RLL/WLL) Single Positive Supply 54% Power Added Efficiency 100% Duty Cycle
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Contextual Info: U2761B DECT RF / IF IC Description The U2761B is an integrated circuit manufactured in TEMIC Semiconductors’ UHF5S technology, designed for DECT application. It contains rejection mixer, IF amplifier, FM demodulator, baseband filter, RSSI, TX preamplifier and power-ramping generator for power
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power amplifier block diagram
Abstract: balun diode mixer U2761B ic MA 2831
Contextual Info: U2761B DECT RF / IF IC Description The U2761B is an integrated circuit manufactured in TEMIC’s UHF5S technology, designed for DECT application. It contains rejection mixer, IF amplifier, FM demodulator, baseband filter, RSSI, TX preamplifier and power-ramping generator for power amplifier.
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u2761bd-7402510-mar-98power amplifier block diagram+2balun diode mixeric ma 2831
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ntp 3000
Abstract: RK73B1ET470J GRM1555C1H1R0CZ01B GRM1555C1H3R0CZ01B GRM155R71C223KA01B M513 MAAPSS0071 MAAPSS0071SMB MAAPSS0071TR-3000 DECT power
Contextual Info: RoHS Compliant DECT Power Amplifier 1880 - 1930 MHz MAAPSS0071 V3 Features • • • • • • • • • • • • Functional Schematic Ideal for DECT Applications Saturated Output Power: +26 dBm Typical Power Gain: 26 dB Typical Low Current: 400 mA at PSAT
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maapss007112-leadntp 3000rk73b1et470j+7grm1555c1h1r0cz01bgrm1555c1h3r0cz01bgrm155r71c223ka01bm513maapss0071smbmaapss0071tr-3000dect power
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