DDQ15 Search Results

HY514460

Contextual Info: •HYUNDAI HY514460 Series SEMICONDUCTOR 256 Kx164 R C MO S DRAM with 2 C A S & W P B PRELIMINARY DESCRIPTION The HY514460 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access

TRAY FBGA 11X13

Abstract: S72MS512PE0HF94V MCP NAND sDR S72MS-P BGA 15X15 137-Ball MCP NAND DDR S30MS-P Spansion NAND Flash Spansion NAND Flash DIE
Contextual Info: S72MS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 Data Sheet Advance Information S72MS-P based MCP/PoP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

WS512S

Abstract: S29WS-S S29WS-P AMAX-16 WS512P WS128P 811-X SA-A11 8x116
Contextual Info: Migrating From S29WS-P to S29WS-R and S29WS-S Application Note By: Jan Gatermann, Keith Luo, Rudy Sterner and James Escamilla 1. Introduction Spansion is always seeking to cost reduce its product line. The 65 nm product families, S29WS-R and S29WS-S, continue that tradition while adding improvements such as higher densities, simplified command

S72NS512RE0

Abstract: DDQ15 S72NS512RD0 spansion marking date code S29NS-R S72NS128
Contextual Info: S72NS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-R Based MCPs Cover Sheet Data Sheet (Advance Information)

a/S3C9004/P9004/C9014/Reset Software for Alchemy Au1000 Processor

Contextual Info: RMI Alchemy Au1210™ Navigation Processor and Au1250™ Media Processor Data Book April 2007 Revision A - Preliminary RMI Alchemy™ Au1210™ Navigation Processor and Au1250™ Media Processor Data Book - Preliminary 2007 Raza Microelectronics, Inc. All rights reserved.

512MB NOR FLASH

Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2

c9ab

Abstract: S29NS-N marking w53 S72WS-N S75NS128NDE w933
Contextual Info: S75NS128NDE Based MCPs 1.8 Volt-only, Stacked Multi-Chip Product MCP x16 MirrorBit Flash Memory and DRAM 128 Mb Multiplexed, Simultaneous Read/Write, Burst Mode Code Flash Memory 256 Mb Multiplexed, Burst Mode Data Flash Memory 128 Mb SDR DRAM ADVANCE

ball 128 mcp

Abstract: MCP NAND, DRAM, NOR LJ512 S29NS-P S72NS128PD0 S72NS256PD0 S72NS512PD0 S72NS-P MCP NAND D3-D16
Contextual Info: S72NS-P MCP/PoP Memory System Solutions MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P MCP/PoP Memory System Solutions Cover Sheet

F3F3

Abstract: WS256 bus1
Contextual Info: Design-In Scalable Wireless Solutions with Spansion Products Application Note Introduction This application note provides an overview of the standard package line-up for Spansion wireless Multi-Chip Products MCPs . It is intended to provide customers with a seamless package migration path from one product

PN547

Abstract: D1545 transistor transistor A562 a562 transistor d1545 PN521 dh52 D1136 7416373 b1658
Contextual Info: Freescale Semiconductor User’s Guide PTKIT8102UG Rev. 1, 9/2005 MSC8102 Packet Telephony Farm Card MSC8102PFC The MSC8102 packet telephony farm card (MSC8102PFC) is a PCI telephony mezzanine card (PTMC) for evaluating media gateway products. This card is designed around the StarCore

TCMS

Abstract: S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95
Contextual Info: S72WS256N Based MCPs 256/512 Megabit 16M/32M x 16-bit CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Split Bus ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications

Contextual Info: RMI Alchemy Au1550™ Security Network Processor Data Book May 2007 Revision E RMI Alchemy™ Au1550™ Security Network Processor Data Book 2007 Raza Microelectronics, Inc. All rights reserved. The contents of this document are provided in connection with Raza Microelectronics, Inc. “RMI” products. RMI makes no representations or warranties with

km418c256bj

Abstract: NZ34 A6Dz
Contextual Info: CMOS DRAM KM418C256B 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fam ily of 2 6 2,144 x 18 bit Fast Page M ode C M O S DRAM s. Fast Page M ode o ffe rs high speed random acce ss of m em ory cells w ithin the sam e row. A ccess tim e -6, -7 or -8 , pow er consum ption (Norm al

S72NS256PD0

Abstract: S72NS512PD0 S72NS-P S29NS-P S72NS128PD0
Contextual Info: S72NS-P Based MCPs/PoPs MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P Based MCPs/PoPs Cover Sheet

Contextual Info: L^E » • SôbûMSb DDD12n D12 ■ M M H S HATRA M H S Prelim inary llliH illl I r T lH September 1990 HM65797 DATA SHEET_ 256 K x 1 HIGH SPEED CMOS SRAM FEATURES . FAST ACC ES TIM E IN DU STRIAL/M ILITAR Y : CO M M ER CIA L : 35/45/55 ns max

Contextual Info: S72VS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-Only, Address-Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16M x 16 bit) DDR DRAM on Split Bus S72VS-R Based MCPs Cover Sheet Data Sheet (Advance Information)

S72VS128RD0

Abstract: MB-108 lpddr3 S72VS256RE0AHBH1 S72VS-R S29VS SDM256D166D1R spansion marking date code S72VS128RD0AHBHE
Contextual Info: S72VS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-Only, Address-Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16M x 16 bit) DDR DRAM on Split Bus S72VS-R Based MCPs Cover Sheet Data Sheet (Advance Information)

Dba1 battery

Abstract: Spansion NAND Flash DIE 137-Ball nand flash pcb layout design Flash MCp nand DRAM 137-ball NOR Flash XIP ws512P Satellite A25 NWP date code
Contextual Info: Design-In Scalable Wireless Solutions with Spansion Products Application Note Introduction This application note provides an overview of the standard package line-up for Spansion wireless Multi-Chip Products MCPs . It is intended to provide customers with a seamless package migration path from one product

512MB NOR FLASH

Abstract: BFW transistors Diode Mark N10 MCP NOR FLASH SDRAM 137-Ball 66 ball nor flash JESD 95-1, SPP-010 NAND FLASH BGA S72WS256NDE S72WS256NEE
Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on

Contextual Info: CMOS DRAM KM418C256B 256K x 18 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fa m ily of 262 ,1 4 4 x 18 bit Fast Page M ode CM O S DRA M s. Fast Page M ode o ffe rs high speed random a cce ss of m em ory cells w ithin the sam e row. A ccess tim e -6, -7 or -8 , pow er consum ption (Norm al

Spansion ddr

Abstract: S72NS512RE0AHGG0
Contextual Info: S72NS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-R Based MCPs Cover Sheet Data Sheet (Advance Information)

S72XS256RE0

Abstract: S72XS128RD0 S29VS s72xs128rd0ahbhd RSC133 SDM256D166D3R S29XS
Contextual Info: S72XS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-Only, Address-High, Address-Low, Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16M x 16 bit) DDR DRAM on Split Bus S72XS-R Based MCPs Cover Sheet

Contextual Info: S72NS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-R Based MCPs Cover Sheet Data Sheet (Advance Information)

BGA 130 MCP NAND DDR

Abstract: JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball
Contextual Info: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information