DDDS37 Search Results

Contextual Info: TMBETST DDDS37E 423 AND Ultra Bright LED Lamps: Type 2 Weight: 2.0 mg Unit: mm AND4GA GaP Ultra Bright Green Light Emission Surface Mount Package Features • • • • Small package size 2.0 (I) x 1.25 (w) x 1.1 (h) size Suitable for DIP and REFLOW soldering

C149M10

Contextual Info: 3TE D POWEREX INC • 72=^21 00D5372 mWEREX b HPRX r - a r - 7 C149 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 (412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43)41.14.14 Inverter Grade SCR 63 Amperes RMS

Contextual Info: Ö3Ö23Ö3 D0D53bb 002 « S O N Y SONY CXK1 2 0 2 S Digital D elay Line D e s c rip tio n The CXK1202S is a digital line memory pertaining to 8-b it structure which employs silicon gate CMOS process. It can easily be used to realize compensation for dropout of VTR and

Contextual Info: « X25F128 16K x 8 Bits SerialFIash Memory With Block Lock™ Protection FEATURES DESCRIPTION • 1MHz Clock Rate • SPI Serial Interface • 16K X 8 Bits — 32 Byte Small Sector Program Mode • Low Power CMOS — <1[iA Standby Current — <5mA Active Current

C149M10

Abstract: scr bt 138 inverter grade SCR C149 prx C149 C149M10 scr c14920 scr prx scr inverter PRX SES
Contextual Info: 3TE D POWEREX INC • 72=^21 00D5372 b H P R X mWEREX r - a r - 7 C149 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 (412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43)41.14.14 Inverter Grade SCR 63 Amperes RMS

IC gal16v8

Abstract: CAL16V8 EZ314 cal16v8b 6V8 equivalent 16V8B 16L8* GAL IC GAL 16V8B-15
Contextual Info: GAL16V8 Lattice High Performance E2CMOS PLD Generic Array Logic Semiconductor Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES >HIGH PERFORMANCE E2CMOS TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 3.0 ns Maximum from Clock Input to Data Output

10 35L DIODE

Abstract: diode IO 35L DIODE JSu 537b diode 10 35L DIODE BZ
Contextual Info: 6-Pack IGBT 600 V 30 A F U JI IGBT MODULE F series O utline D raw ings • Features • L o w S a tu r a t io n V o lta g e • V o ltag e D rive • V a r ie ty o f P o w e r C a p a c ity S e rie s ■ A p p lica tio n s • In v e rte r fo r M o to r D rive

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS LU nickicozi Snap-in Term inal T yp e , Sm all-Sized series > Withstanding 3000hours application of ripple current at 85°C . >One rank smaller case sizes than standard LQ series. >Higher production efficiency due to 4.0mm long terminal.

Contextual Info: n ic K ic o n ALUMINUM ELECTROLYTIC CAPACITORS GQ Snap-in T erm inal Type, W ide Tem perature Range A pproved by R e liability C enter fo r Electronic C om ponent. Japan-C ertification NO.RCJ-03-24C Series RCJ Approved Anti-Solvent Feature Through 100V only

Contextual Info: S-MOS S Y S T E M S A Seiko E pson A ffiliate SPC8104 VGA LCD CONTROLLER Data Sheet Copyright 1997 S -M O S Systems Inc. All rights reserved. VD C This document, and any text derived, extracted or transmitted from it, is the sole property of S -M O S Systems Inc. and may not be used, copied,

Contextual Info: XlHE Preliminary Information XM28HC010 1 Megabit Module 128K X 8 Bit 5 Volt, Byte Alterable High Speed E2PROM TYPICAL FEATURES * High Speed 1 Megabit 128K x 8 E2PROM Module * Access Time of 70 ns at -55°C to +125°C * SIMPLE Byte and Page Write —Single 5 Volt Supply