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    DD377 Search Results

    DD377 Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    DD37741-931
    Facon Semiconductor Diode / Thyristor Packs Scan PDF 111.22KB 3
    DD37741931
    Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF 41.23KB 1

    DD377 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    din 41332

    Abstract: siemens CAPACITOR gpf siemens gpf 100 siemens din 41332 gpf CAPACITOR siemens siemens gpf 470/40 gpf CAPACITOR din41332 gpf siemens
    Contextual Info: • Ô235b05 DD377bS E « S I E G 85209 Series General Purpose - 40°C to + 85°C -10 % , +100% or -1 0 % , + 50% Capacitance Tolerance SIEMENS AKTIENGESELLSCHAF ¡p^- j^ e 47E D Aluminum electrolytic capacitor with etched aluminum electrodes, encapsulated in


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    35b05dd377bs2000h/500h/+15217x0248x0268x0315x0335x0394x0din 41332siemens capacitor gpfsiemens gpf 100siemens din 41332gpf capacitor siemenssiemens gpf 470/40gpf capacitordin41332gpf siemens PDF

    IC 7481 pin configuration

    Contextual Info: MITSUBISHI MICROCOMPUTERS 7480/7481 GROUP .•;• « •:*. ••:•; ^ H P '* * 'i.' * « > * SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION PIN CONFIGURATION The 7480/7481 group is the single-chip microcomputer adopting the silicon gate CMOS process. In addition to its simple instruction


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    16/sclkki-9711gd37fi7fiic 7481 pin configuration PDF

    Z80A CPU

    Abstract: Z80A Z80A/B
    Contextual Info: C P U U s e r 's Ma n u a l <£3 L £ E Ch apter 5 Z 8 0 In s t r u c t io n D e s c r ip t io n 5.0 INTRODUCTION: Z80 ASSEMBLY LANGUAGE The assembly language provides a means for writing a program without having to be concerned with actual memory addresses or machine instruction formats. It al­


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    1000h003717bz80a cpuz80a+1z80a/b PDF

    44C16104A

    Abstract: 44c16104
    Contextual Info: KM M53632004A K/A KG DRAM MODULE KM M53632004AK/AKG EDO Mode 32M X 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M53632004A is a 32Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53632004A consists of sixteen CM O S 16Mx4bits and


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    m53632004am53632004ak/akg16mx416mx1+632mx36bitsm53632004akcycles/64ms53632004akg44c16104a44c16104 PDF

    HL 4929 LF

    Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP88CK49/M49 CMOS 8-BIT MICROCONTROLLER TMP88CK49N, TMP88CM49N TMP88CK49F, TMP88CM49F TMP88CK49N, TMP88CM49N, TMP88CK49F, and TMP88CM49F, are high-speed, high-function 8-bit single­ chip microcomputers whose built-in features include large-capacity RAM, multi-function timer/counter, and


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    tmp88ck49/m49tmp88ck49ntmp88cm49ntmp88ck49f+3tmp88cm49f10-bithl 4929 lf PDF

    B32655 MKP

    Abstract: b32655 Siemens B32655 MKP 0,68 x 630 V Siemens B32655 MKP MKP CAPACITORS
    Contextual Info: B535b05 0 0 3 7 b clS 3 • S I E G MKP Capacitors i SIEMENS AKTIENGESELLSCHAF B 32655 M7E D _ A-05-17-27 Metallized polypropylene capacitors - standard version Self-healing wound capacitor w ith face-end contacts, comprising a polypropylene dielectric. Built into flam e-retardant, rectangular plastic case, epoxy resin sealed to ensure


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    b535b05b32655 mkpb32655siemens b32655 mkp 0,68 x 630 v+2siemens b32655 mkpmkp capacitors PDF

    Contextual Info: 55E D Æ 7 • TRSIEB? Q03773D 7Qt. ■ SGTH T-HC-I3-ZÇ, S G S -IH O M S O N S G S- THOMSON * 7 # . M 2 8 F 2 5 6 CMOS 256K 32K x 8 FLASH MEMORY ■ ■ ■ ■ FAST ACCESS TIME: 100ns 1,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 100ns


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    q03773d100nsm28f2560d377m4+328f256pdip32plcc32 PDF

    Contextual Info: 3850 Group MITSUBISHI MICROCOMPUTERS SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION • P o w e r source voltage The 3850 group is the 8-bit m icrocom puter based on th e 740 fa m ­ In high-speed m o d e . 4.0 to 5.5 V


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    gd377hq PDF

    KM416S4030AT

    Contextual Info: KMM466S824AT NEW JEDEC SDRAM MODULE KMM466S824AT SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S824AT is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    kmm466s824at8mx644mx16400mil+3144-pin144-plnkm416s4030at PDF

    km44c16104ak

    Abstract: 44c16104
    Contextual Info: DRAM MODULE KMM53616004AK/AKG KMM53616004AK/AKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 53616004A is a 16Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53616004A consists of eight CM O S 16Mx4bits DRAMs


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    kmm53616004ak/akg16mx416mx13616004a+616mx36bitsm53616004akcycles/64msm53616004akgkm44c16104ak44c16104 PDF

    DMX DECODER IC

    Abstract: HA08 2F75 2f70 DECODER 5.1 dolby bass
    Contextual Info: FUJITSU ASSP CMOS Dolby Digital AC-3 Decoder LSI MB86342B Dolby Digital AC-3 is a perceptual digital audio coding technique of great efficiency, quality and versatility. The MB86342B is Fujitsu’s latest Dolby Digital 5.1-channel decoder. It is fully certified as a “Dolby Digital AC-3 Decoder LSI" by Dolby


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    mb86342b100-pinfpt-100p-m06m5555555555525555+6dmx decoder icha082f752f70decoder 5.1dolby bass PDF

    Contextual Info: MITSUBISHI MICROCOMPUTERS 3851 Group SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION • Power source voltage The 3851 group is the 8-bit microcomputer based on the 740 fam ­ In high-speed m o d e . 4.0 to 5.5 V


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    qd377dd377 PDF

    Contextual Info: microelectronics Preliminary Data Sheet November 1998 group Lucent Technologies Bell Labs Innovations TFRA08C13 Octal T1/E1 Framer Features Facility Data Link Features • Eight independent T1/E1 transmit and receive framers. m Internal DS1 transmit clock synthesis—no external


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    tfra08c13ds99-039t1e1ds98-282t005002b PDF

    5962-9150101MZA

    Abstract: qml-38535 TP1031 S43 SMD TS68332 capacitor 104 4OS smd code marking k3d SMD MARKING CODE s98
    Contextual Info: REVISIONS LTR DESCRIPTION APPROVED DATE YR-MO-DA A Changes in accordance with NOR 5962-R006-98 98-01-22 Monica L. Poelking B Changes in accordance with NOR 5962-R111-98 98-05-22 Monica L. Poelking C Add device 02. Editorial changes throughout. 98-07-01 Monica L. Poelking


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    5962-r006-985962-r111-9810g47db00377b4+85962-9150101mzaqml-38535tp1031s43 smdts68332capacitor 104 4ossmd code marking k3dsmd marking code s98 PDF

    CD40107BE

    Abstract: schematic diagram NAND gates dg37 CD401078 Cd40107be functional diagram 15-V CD40107B
    Contextual Info: 44E D HARRIS SEMICOND SECTOR • *4302271 □ □ 3 7 7 1 1 3 BHAS -Z I U HARRIS CMOS Dual 2-Input NAND Buffer/Driver High-Voltage Type 2 0 -V o lt Rating) ■ CD 40107B is a dual 2 -in p u t N A N D b u ffe r/d riv e r containing tw o independent 2* in p u t N A N D buffers w ith open-drain single


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    cd40107b20-volt14-leadcd40107be+7cd40107bf500pfschematic diagram nand gatesdg37cd401078cd40107be functional diagram15-v PDF

    Contextual Info: Preliminary DRAM MODULE KM M5324000A SW/A SWG KM M5324000AS W/AS WG Fast Page Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 5324000A is a 4Mx32bits Dynamic RAM . Part Identification high density memory module. The Samsung KM M5324000A


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    m5324000as4mx16324000a4mx32bits+4m5324000a4mx16bits72-pin5324000asw PDF

    M53216

    Abstract: 16Mx32-bit
    Contextual Info: DRAM MODULE KM M53216004AK/A KG KMM53216004AK/AKG EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung K M M 53216004A is a 16Mx32bits RAM high density memory module. The Dynamic Samsung -• Part Identification


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    kmm53216004ak/akg16mx43216004a16mx32bits+7m53216004ak/a53216004akcycles/64ms53216004akg1250milm5321616mx32-bit PDF