DD27B Search Results
DD27B Datasheets Context Search
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Contextual Info: i i N AMER PHILIPS/DISCRETE b'lE »’ bbS3T31 DD27b3b TT3 « A P X BCY70 to 72 y v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes intended for general purpose industrial applications. The BCY71 is a low noise version. Q U IC K R E F E R E N C E D A T A |
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Contextual Info: I I I N AUER PHILIPS/DISCRETE t.'lE D bbSa^l DD27bl]i 5 2 3 H A P X P h ilip s S em ico n d u c to rs BCX23 D a ta sh eet statu s P re lim in a ry s p e c ific a tio n d a te o f issue J u n e 1 990 Silicon planar epitaxial transistor QUICK REFERENCE DATA |
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Contextual Info: N AP1ER PHILIPS/DISCRETE b'JE D Philips Semiconductors_ bt.53^31 DD27Bb5 070 * A P X _Preliminary specification Triac BT139 series H GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated 16 A triacs intended for use in applications |
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dd27bb5bt139o220abbt139-+1 | |
bf370Contextual Info: N AMER PHILIPS/DISCRETE bTE D I I bbS3^31 DD27b8D TOO APX o ro /u SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 envelope, intended for use in large-signal handling i.f. pre amplifiers of TV receivers in combination with surface acoustic wave filters. |
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bfp 11A diodeContextual Info: Si GEC PLESSEY S I M I t O N I L C T O H S P D S P 1 6 1 1 6 /A 16 BY 16 BIT COMPLEX MULTIPLIER Supersedes version October 1995 verison, DS3707 - 3.0) The PQSP16116A will multiply two complex (1 6 + 1 6 ) bit words every 50ns and can be configured to output the |
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ds3707pqsp16116apdsp16116/apdsp16318+4 | |
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Contextual Info: HM5216808C Series HM5216408C Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM SSTL-3 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM (SSTL-3) HITACHI ADE-203-617 (Z) Preliminary Rev. 0.0 Jul. 10, 1996 Description A ll inputs and outputs are referred to the rising edge of the clock input. The HM5216808C Series, |
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hm5216808chm5216408c576-word152-word+4 | |
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Contextual Info: N AUER PHILIPS/DISCRETE bSE D bbsa^ai □ D27bBL bSb IAPX D r BF422 SILICON EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelope primarily intended fo r class-B video output stages in colour television and professional monitor equipment. P-N-P complements are BF421 and BF423. |
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d27bblbf422bf421bf423+2 | |
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Contextual Info: M IT S U B IS H I MICROCOMPUTERS M 37710E4BXXXFP M37710E4BFS PROM VERSION of M 37710M 4B XXXFP DESCRIPTION The M37710E4BXXXFP is a built-in PROM single-chip mic rocomputers designed with high-performance CMOS sili con gate technology. This is housed in a 80-pin plastic |
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37710e4bxxxfpm37710e4bfs37710m10-bit+2 | |
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Contextual Info: International Iö R Rectifier Data Sheet No. PD-6.017D IR2125 CURRENT LIMITING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +500V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 12 to 18V |
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Contextual Info: MITSUBISHI MICROCOMPUTERS M37710E4BXXXGP PROM VERSION of M37710M4BXXXGP DESCRIPTION • The M37710E4BXXXGP is a built-in PROM single-chip 16bit microcomputer designed with high-performance CMOS silicon gate technology. This is housed in a small 80-pin plastic molded QFP. The features of this chip are similar to |
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m37710e4bxxxgpm37710m4bxxxgp16bit80-pin+2 | |
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Contextual Info: Si G E C P L E S S E Y S E M I C O N D U C T O R AD VANCE INFORMATION S PDSP16488A SINGLE CHIP 2D CONVOLVER WITH INTEGRAL LINE DELAYS Supersedes October 1995 Edition, DS3713 - 4.0 The PDSP16488A is a fully integrated, application spe cific, image processing device. It performs a two dimensional |
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pdsp16488ads37136488a0e10p | |
OPA2658Contextual Info: B U R R - BROW N E OPA265Q t 1 Dual Wideband, Low Power Voltage Feedback OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • LOW POWER: 50mW/Amp The OPA2650 is a dual, low power, wideband voltage feedback operational amplifier. It features a high band width of 360MHz as well as a 12-bit settling time of |
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opa265q50mw/ampopa2650360mhz+4 | |
photodiode amplifier
Abstract: OPT201 OPT201KP QPT201KP LED 650nm LED Laser International
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650nm400maopt201zz006-1+7 | |
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Contextual Info: HM5216165 Series 524,288-word x 16-bit x 2-bank Synchronous Dynamic RA M HITACHI ADE-203-280 A (Z) Preliminary Rev. 0.1 Oct. 20,1995 Description A ll inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance. |
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M5M418165
Abstract: M5M418165BJ M5M418 m5m418165b
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m5m418165bj16777216-bit1048576-wqrd16-bit+5 | |
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Contextual Info: A d v a n c e I n f o r m a t io n S p e c if ic a t io n < £ 2 iL C E Z86B07 CMOS Z8 8 - B it M ic r o c o n t r o l l e r Fo r I n t e l l ig e n t B a t t e r y C h a r g in g a n d m o n i t o r in g FEATURES • Low-Cost, 8-Bit CMOS MCU Three Digital Inputs at CMOS Levels |
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z86b0718-pin6b0708pscz86b0708ssc+2 | |
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Contextual Info: P r o d u c t S p e c if ic a t io n < £ S LG E Z86C05/C07 C M OS Z8 8-BIT MICROCONTROLLER FEATURES • The Z86C05/C07 Devices Have the Following General Characteristics: Part Z86C05 Z86C07 ROM 1Kbyte 2 Kbytes RAM 124 Bytes 124 Bytes Speed 8 MHz 12 MHz |
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z86c05/c07z86c05z86c0718-pin+1 | |
OO27
Abstract: LCD DISPLAY MODULE sharp LQ
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Contextual Info: 4355455 0 0 2 7 b fll International I R Rectifier Data Sheet No. PD-6.032C IR2131 3 HIGH SIDE AND 3 LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage |
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ir21315m-1982m0-047ac554s2 | |
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Contextual Info: Data Sheet August 1997 microelectronics group Lucent Technologies Bell Labs Innovations LH1465AB/AAE ISDN dc Termination IC Features Description • ANSI U-DSL compatible The LH1465 ISDN dc Termination IC is used on liinterface digital subscriber lines U-DSL and pro |
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lh1465ab/aaelh14656n139s97-414isd+3 | |
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Contextual Info: HM5164165A Series HM5165165A Series 4194304-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-453 B (Z) Preliminary Rev. 0.2 Jun. 12, 1996 Description The Hitachi HM5164165A Series, HM5165165A Series are CMOS dynamic RAMs organized as 4,194,304-word X 16-bit. They employ the most advanced CMOS technology for high performance |
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hm5164165ahm5165165a4194304-word16-bit+2 | |
BCY79Contextual Info: bbS3T31 □□2?b£2 OMb b'lE D N AMER PHILIPS/DISCRETE A APX D L /T /O BCY79 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes, intended for use in amplifier and switching applications. QUICK REFERENCE DATA BCY78 BCY79 Collector-emitter voltage open base |
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Contextual Info: GEC PLESS EY w S I' M I C O IN IJ V C T Ü K Î P D S P 1 6 3 5 0 l/Q SPLITTER / NCO Supersedes version in December 1993 Digital Video & Digital Signal Processing 1C Handbook, HB3923-1) The P D S P 16350 provides an integrated solution to the need for very accurate, digitised, sine and cosine waveforms. |
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hb3923-1fl522pdsp1635037bfls22+1 | |
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Contextual Info: May.7 ‘93 MITSUBISHI LSIs M5M4V16407ATP-10,-12,-15 Preliminary 16M 4194304 - WORD BY 4 - BIT Synchronous DRAM PRELIMINARY This document is a preliminary specification and some of the contents are sub ject to change without notice. DESCRIPTION The M5M4V16407A incorporates 8 bit data registers and amultiplexer into a 4194304-word by 4-bit |
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m5m4v16407atp-10m5m4v16407a4194304-worda0-10+2 | |