DD17777 Search Results

Contextual Info: MSE D • ‘ÌO'ÌTSSD TOSHIBA TOSHIBA TRANSISTOR 2 DD17777 «T O S ii DISCRETE/OPTO 2N5550 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) FO R G E N E R A L P U R P O S E USE HIGH V O L T A G E AMPLIFIER APPLICATIONS. . High C ollector Breakdown Voltage •'

Contextual Info: O K I Semiconductor MSM511001B 1,048,576-Word x 1-Bit DYNAMIC RAM : NIBBLE M ODE TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The

18-PIN

Abstract: 26-PIN ZIP20-P-400 MSM OKI
Contextual Info: O K I Semiconductor MSM5 1 1 0 0 1 B 1,048,576-Word x 1-Bit DY N A M IC R A M : N IBBLE M O D E TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The

Contextual Info: Optical disc ICs $ </> V CO with sensitivity adjustment function I 5 BA7042 The BA7042 is a monolithic 1C comprising a VCO voltage controlled oscillator with sensitivity adjusting capabilities. The oscillation frequency can be set with an external constant, and is controlled according to the control voltage.