DD 65 N 800 K Search Results

TT 80 N 1200

Abstract: ac switches isoPACK z85n DDB6U20N B6U20 TTB6C B6U60 M/MPC 2810
Contextual Info: ISOPACK Modules Type V dr m . VpRM V dsm V rsm Ifr m s m = = V rrm + 100 V V A ¡FSM / i 2d t 10 m s 10 ms, tv, tv -11,1 . A A 2s ld/tc A /° C V T O Tt Ivi ' t«i = t., V R th J C R th C K tv , p e r a rm p e r a rm mQ °c/w °c/w °c '' 1• O u tlin e

DD 127 D

Abstract: dd 127 dd 127 d dd 22 s 800 eupec dd 82 DD 53 S 1200 K DD 127 EUPEC DD 31 800 EUPEC DD 53 s 1200 k
Contextual Info: EUPEC MTE D 34D35T? Fast diode modules Type V RRM If r m s m D D D D in Ifs m / i 2dt 10 ms, 10 ms, tv,= tv j m ax Wj m ax tv j max Ifa v m ^ V TO c SÔ7 • It = tv j max UPEC A A A2s A/°C tvj max K/W K/W °C R th J C 180 °el sin. -d i/d t 100 V R (hC K

thyristor aeg

Abstract: aeg powerblock tt aeg powerblock tt 32 n thyristor AEG t 10 n 600 aeg thyristor aeg powerblock td aeg tt 18 n 1200 aeg tt 46 n 1200 AEG DD 65 N 1200 K AEG DD 31 n 1200
Contextual Info: A E G CORP 17E D • GOa'iMSb 000=1313 4 Powerblocks für netzgeführte Stromrichter Power modules for line commutated converters Modules surmoulés pour applications secteur é zté -o l I - - « r- a 3 TT.N - Vollgesteuerte Kompaktbaustelne/Fully controlled power modules/Modules surmoulés à 2 thyristors

DD 65 N 800 K

Abstract: DD 90 N 1400 k B6U20 DD 152 N DDB2U15N B6U160 DDB6U160N DDB6U20N
Contextual Info: ISOPACK Modules Type V drm, V rrm V dsm V rsM = ^ = IpRMSM drm V rrm + 100 V A V Ifs m / ¡ 2dt V TO It R th J C R .h C K 10 ms, 10 ms, tv] = t„j = per arm per arm tvj max tvj max tvj max tvj max A A2s V mQ °c/w °c/w °c ld/tc A/°C tvj max O utline Single phase diode bridges

transistor 936

Abstract: 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100
Contextual Info: A tÓ K m m an A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 -1 7 5 MHz DU2840V Features • • • • • • N-Channel Enhancement Mode Device HF to VHF Applications 40 Watts CW Common Source Push-Pull Configuration DMOS Structure Aluminum Metallization

44358

Abstract: 4435a serial counter 24129 lek 923 LC587004 LC587006 LC587008 QIP80A 587006
Contextual Info: Ordering number : ENÌK4435A CMOS LSI LC587008, 587006, 587004 Single-Chip 4-Bit Microprocessors with LCD Driver, 2 Kb RAM, and 8,12, or 16 KB ROM on chip Preliminary Overview The LC587004, LC587006 and LC5B7008 are 80-pin lowvoltage CMOS 4-bit microprocessors that include LCD

TIC 33 LCD

Contextual Info: KS0065B 40CH SEGMENT/COMMON DRIVER FOR DOT MATRIX LCD INTRODUCTION 64 QFP The KS0065B is a LCD d rive r LSI w hich is fabricated by low pow er C M O S tech n olo gy. B asically this LSI consists of 2Q¿2bit bidrectional shift register, 2 0 ; ¿2 bit data latch and 2 0 ; ¿2 bit driver,

se012

Abstract: CF455 ni 6008 rom 512x4 se022 LC587204A kd 503 transistor SE012 diagram SE603 lopg
Contextual Info: Ordering number : EN*6008 CM OS 1C LC587208A, 587206A, 587204A, 587202A ¡S A ftY O i 4-Bit Single-Chip Microcontroller LCD Driver ROM: 2,4,6, or 8 K x 16 bits, RAM: 512 x 4 bits Preliminary Overview The LC587202A through LC587208A are 4-bit CMOS microcontrollers that integrate RO M , R A M , and an

Contextual Info: DENSE-PAC 4 Megabit CMOS SRAM MICROSYSTEMS DPS256X32V3 D E SC R IPT IO N : The DPS256X32V3 "VERSA -STAC K" module is a r e v o lu tio n a ry n e w m e m o ry subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic

B2HKF

Abstract: TTB6C110N TDB6HK110N DDB6U160N B2HKF 250 TDB2HKF85 TDB2HKF B6U 205 N L TTB6C cr 4180
Contextual Info: Fast Asymmetric Thyristors Type V drm V rrm V V V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) It r s m A It s m i i 2dt Itavm^c kA A2s A/°C 10ms 10ms tvj max tvj max *103 400 2,5 30 V(TO) rT (di/d t)cr V m ii A/pis tvj = tvj = DIN I EC tvjma* tvj max 747-6

db-26 connector pin assignment

Abstract: AM52-0002TR AM52-0002 N1000
Contextual Info: MÆ Ù kcem an company Preliminary Release AMP 3.5 W High Efficiency Power Amplifier GSM 880 - 915 MHz Features • SOIC-8 Thermally Efficient Plastic Package • +35.5 dBm Typical Power Out With 5.8 V Drain Voltage • +34.5 dBm Typical Power Out With 4.8 V Drain Voltage

Contextual Info: Fast Asymmetric Thyristors T ype V drm V rrm Itrsm Itsm l i 2dt Itavm^ c V V A kA A2s 10ms 10ms tvj max tvj max *103 A /°C 180° el sin V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) 400 2,5 30 V(TO) rT (d i/d t)cr V m i2 A / jjs tvj = tvi = DIN I EC

STH4N80

Contextual Info: SGS-THOMSON KLtKSTT^OKlDCeS STH4N80 STH4N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH4N80 STH4N80FI V dss R dS oii Id 800 V 800 V 3 Q 3 il 4.3 A 2.8 A . • . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: 4 Megabit CMOS SRAM DPS128X32V3 M ! C K O S ¥ S i li M S DESCRIPTION; The DPS128X32V3 "VERSA-STACK" module is a revolutionary new memory subsystem using Dense-Pac Microsystems7ceramic Stackable Lead less Chip Carriers SLCC mounted on a co-fired ceramic

ic ir 2112 pin layout

Abstract: Novatek driver ic NT7605 NT7605-BDW01 y 546 COM16 NT7605H-BDB01 NT7605H-BDT01 S100 54-625
Contextual Info: NT7605 Single-chip 20C X 2L Dot-Matrix LCD Controller / Driver Features ! 2 kinds of LCD pads sequence ! Character Generator ROM CG ROM : 2 kinds of CG ROM sizes: 192 characters: 160 5 X 8 dot patterns 32 5 X 10 dot patterns 240 characters: 192 5 X 8 dot patterns

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

Contextual Info: an A M P com pany RF MOSFET Power Transistor, 2W, 12V 30 - 90 MHz FH2165 Features • • • • • • N -C hannel K nhancem ent M ode Device M eets CRCOM D raw ing A3012716 D esigned for F req u en cy H o p p in g System s 30-90 MHz Lower C ap acitances for B ro a d b an d O p e ra tio n

Contextual Info: S G S - T H O M S O N ¿ 5 S T K 2N 80 ¡m e ra « 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STK2N80 dss 800 V R D S o n Id <7 a 2.1 A • TYPICAL RDS(on) = 5 0 . . AVALANCHE RUGGED TECHNOLOGY ■ . . . . 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: KS0063B 80CH SEGMENT DRIVER FOR DOT MATRIX LCD INTRODUCTION T h e K S 0 0 6 3 B is a LCD driver LSI w hich is fabricated by low power CM OS technology. B asically this LSI consists of 40x2 bit bidrectional shift register, 40x2 bit data latch and 40x2 bit LCD driver

Contextual Info: DENSE-PAC 16 Megabit CMOS SRAM MICROSYSTEMS DPS512X32V3 D E SC R IPT IO N : The DPS512X32V3 "VERSA -STA C K" module is a re v o lu tio n a r y n e w m e m o ry subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic

25 ohm semirigid

Contextual Info: MùkmM m an A M P com pany RF MOSFET Power Transistor, 100W, 28V UF28100M 100-500 MHz V2.00 Features • • • • r»i N -C hannel K nhancem ent M ode Device DMOS S tru ctu re Lower C ap acitances for B ro ad b an d O p e ra tio n High S atu rated O u tp u t Pow er

QFP44-P-910-VK

Abstract: 32-bit shift register MSM5238 MSM5238GS 28 pin DOT MATRIX LCD
Contextual Info: O K I semiconductor MSM5238_ DOT M A T R IX LCD 32 D O T COMMON D R IV E R G E N E R A L D ESCRIPTIO N The O K I M SM 52 38 G S is a dot m a trix L C D 's c o m m o n driver L S I w hich is fa b ric a te d by lo w pow er C M O S metaJ gate technology. The scanning signal in one m atrix display fram e can be divided into up to 1/32 d u ty . T h is L S I consists

Contextual Info: D E N S E -P A C 16 Megabit CMOS SRAM MICROSYSTEMS DPS512X32V3 DESCRIPTION: The D PS512X32V3 'V E R S A -S T A C K " module is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCQ mounted on a co-fired ceramic substrate. It offers

afa75

Contextual Info: DPS256X32V3 Dense-Pac Microsystems. Inc. ^ CERAMIC 256K X 32 CM OS SRAM VERSA-STACK PRELIMINARY DESCRIPTION: The DPS256X32V3 "VER SA-STAC K" m o d u le is a r e v o lu t io n a r y n e w m e m o ry s u b s y s te m u s in g Dense-Pac M icrosystem s' ceram ic Stackable Leadless