DD 65 N 800 K Search Results

thyristor aeg

Abstract: aeg powerblock tt aeg powerblock tt 32 n thyristor AEG t 10 n 600 aeg thyristor aeg powerblock td aeg tt 18 n 1200 aeg tt 46 n 1200 AEG DD 65 N 1200 K AEG DD 31 n 1200
Contextual Info: A E G CORP 17E D • GOa'iMSb 000=1313 4 Powerblocks für netzgeführte Stromrichter Power modules for line commutated converters Modules surmoulés pour applications secteur é zté -o l I - - « r- a 3 TT.N - Vollgesteuerte Kompaktbaustelne/Fully controlled power modules/Modules surmoulés à 2 thyristors

transistor 936

Abstract: 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100
Contextual Info: A tÓ K m m an A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 -1 7 5 MHz DU2840V Features • • • • • • N-Channel Enhancement Mode Device HF to VHF Applications 40 Watts CW Common Source Push-Pull Configuration DMOS Structure Aluminum Metallization

44358

Abstract: 4435a serial counter 24129 lek 923 LC587004 LC587006 LC587008 QIP80A 587006
Contextual Info: Ordering number : ENÌK4435A CMOS LSI LC587008, 587006, 587004 Single-Chip 4-Bit Microprocessors with LCD Driver, 2 Kb RAM, and 8,12, or 16 KB ROM on chip Preliminary Overview The LC587004, LC587006 and LC5B7008 are 80-pin lowvoltage CMOS 4-bit microprocessors that include LCD

TIC 33 LCD

Contextual Info: KS0065B 40CH SEGMENT/COMMON DRIVER FOR DOT MATRIX LCD INTRODUCTION 64 QFP The KS0065B is a LCD d rive r LSI w hich is fabricated by low pow er C M O S tech n olo gy. B asically this LSI consists of 2Q¿2bit bidrectional shift register, 2 0 ; ¿2 bit data latch and 2 0 ; ¿2 bit driver,

se012

Abstract: CF455 ni 6008 rom 512x4 se022 LC587204A kd 503 transistor SE012 diagram SE603 lopg
Contextual Info: Ordering number : EN*6008 CM OS 1C LC587208A, 587206A, 587204A, 587202A ¡S A ftY O i 4-Bit Single-Chip Microcontroller LCD Driver ROM: 2,4,6, or 8 K x 16 bits, RAM: 512 x 4 bits Preliminary Overview The LC587202A through LC587208A are 4-bit CMOS microcontrollers that integrate RO M , R A M , and an

Contextual Info: Fast Asymmetric Thyristors T ype V drm V rrm Itrsm Itsm l i 2dt Itavm^ c V V A kA A2s 10ms 10ms tvj max tvj max *103 A /°C 180° el sin V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) 400 2,5 30 V(TO) rT (d i/d t)cr V m i2 A / jjs tvj = tvi = DIN I EC

Contextual Info: 4 Megabit CMOS SRAM DPS128X32V3 M ! C K O S ¥ S i li M S DESCRIPTION; The DPS128X32V3 "VERSA-STACK" module is a revolutionary new memory subsystem using Dense-Pac Microsystems7ceramic Stackable Lead less Chip Carriers SLCC mounted on a co-fired ceramic

Contextual Info: an A M P com pany RF MOSFET Power Transistor, 2W, 12V 30 - 90 MHz FH2165 Features • • • • • • N -C hannel K nhancem ent M ode Device M eets CRCOM D raw ing A3012716 D esigned for F req u en cy H o p p in g System s 30-90 MHz Lower C ap acitances for B ro a d b an d O p e ra tio n

Contextual Info: S G S - T H O M S O N ¿ 5 S T K 2N 80 ¡m e ra « 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STK2N80 dss 800 V R D S o n Id <7 a 2.1 A • TYPICAL RDS(on) = 5 0 . . AVALANCHE RUGGED TECHNOLOGY ■ . . . . 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: KS0063B 80CH SEGMENT DRIVER FOR DOT MATRIX LCD INTRODUCTION T h e K S 0 0 6 3 B is a LCD driver LSI w hich is fabricated by low power CM OS technology. B asically this LSI consists of 40x2 bit bidrectional shift register, 40x2 bit data latch and 40x2 bit LCD driver

25 ohm semirigid

Contextual Info: MùkmM m an A M P com pany RF MOSFET Power Transistor, 100W, 28V UF28100M 100-500 MHz V2.00 Features • • • • r»i N -C hannel K nhancem ent M ode Device DMOS S tru ctu re Lower C ap acitances for B ro ad b an d O p e ra tio n High S atu rated O u tp u t Pow er

Contextual Info: DENSE-PAC 2 Megabit CMOS SRAM MICROSYSTEMS DPS128X16n3 DESCRIPTION: The DPS128X16n3 SRAM "S T A C K " modules are a revolutionarynew memory subsystem using Dense-PacMicrosystems'ceramicStackable LeadlessChip Carriers SLCC . Available in straight leaded, " J " leaded

KBR1000H

Abstract: 50g k hall LC5872 LC5873 LC5874 LC5876 LC58E76 LC5870 3152A KBR-1000H
Contextual Info: Ordering number : E N ^4434 CMOS 1C LC58E76 SAMYO On-Chip EPROM Microcomputer 4-Bit Single Chip Microprocessor with LCD Driver, 12 Kbytes of EPROM and 1 Kbit of RAM On-Chip Preliminary Overview The LC58E76 is an on-chip EPROM microcontroller in the L C 5 8 7 X se r ie s o f CM O S 4 -b it s in g le ch ip

Contextual Info: • 7TSTE37 0ü 4b l03 2T3 ■ S G T H _ rZ 7 SGS-THOMSON Ä 7# « fô m io * ! S T K 1 7 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ . ■ ■ ■ ■ . TYPE V dss RDS on Id STK17N10 100 V < 0.11 n 17 A TYPICAL RDS(on) = 0.09 Q

Contextual Info: m an A M P com pany Low Noise Amplifier 1.575 GHz AM50-0002 V 2.00 Features SO-8 • Low Noise Figure: 1.1S dH fl B H H PIN E i a m 'k ia • High Gain: 27 dH -2284-2440 3 80 4 K » • Low P o w e r Consum ption: 5 to 5 V, 20 mA O rientation m a rk — _

tlc27m

Contextual Info: TLC27M2, TLC27M2A, TLC27M2B, TLC27M7 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOSQ51C - OCTOBER 1987 - REVISED MAY 1999 Low Noise . . . Typically 32 nV/VHz at f = 1 kHz Trimmed Offset Voltage: TLC27M7 . . . 500 nV Max at 25°C, V DD = 5 V Low P o w e r . . . Typically 2.1 mW at 25°C,

b 595 transistor

Abstract: transistor b 595
Contextual Info: m an A M P com pany Wireless Bipolar Power Transistor, 10W 1.78 -1.90 GHz Features • • • • • PH1819-10 SL.Ü :i4 dd'- D esigned for C ellular Base Station A pplications -30 dBc Typ 3 rd IMD at 10 W atts PEP C o m m o n K m itter C onfig u ratio n

Contextual Info: M a n A M P <c o m p a n y Power GaAs MMIC Amplifier 2 - 6.5 GHz MAAM26100 V 2.00 Features • • • • • +30 dBm Typical Saturated Power 19 clB Typical Gain 30"'' Typical Pow er Added Kftlciency On-Chip Bias Network DC Decoupled Kl; Input and Output

NT7605

Abstract: y 546 ic ir 2112 pin layout
Contextual Info: NT7605 Single-chip 20C X 2L Dot-Matrix LCD Controller / Driver Features ! 2 kinds of LCD pads sequence ! Character Generator ROM CG ROM : 2 kinds of CG ROM sizes: 192 characters: 160 5 X 8 dot patterns 32 5 X 10 dot patterns 240 characters: 192 5 X 8 dot patterns

MSM64172

Abstract: VQH207 P13CO
Contextual Info: O K I Semiconductor MSM64172_ Built-in Serial Port and LCD Driver 4-Bit Microcontroller GENERAL DESCRIPTION The MSM64172 is a low-power 4-bit m icrocontroller that incorporates O K I's C P U core nX-4/20. The MSM64172 has a m inim um instruction execution tim e of 5 is (@ 600 kH z and 3.0 V . The

Contextual Info: □PM Dense-Pac Microsystems, Inc. DPS41288 1 28 K X 8 C M O S S R A M M O D U L E O DESCRIPTION: The DPS41288 is a one m egabit Static Random Access M em o ry SRAM , com p le te w ith m em ory interface logic and on-board capacitor, organized as 128K X 8

Contextual Info: D E N S E -P A C M 1 C R O S Y S T e Ms /H - T c n S k S ¡-j¡gh Density Memory Device 1 Megabit High Speed SRAM dps32KX32Y5 PRELIMINARY DESCRIPTION: The DPS32KX32Y5 a 32K x 32 SRAM module the utilize the new and innovative space saving TSOP stacking technology. The module is constructed of

SA978

Abstract: sa979
Contextual Info: IN TE G R A TE D ClR C U fTS PCA1 67x series 32 kHz watch circuits using a silver-oxide or a 3 V lithium battery Product specification Supersedes data of September 1993 File under Integrated Circuits, IC16 Philips Semiconductors 1997 Apr 22 P H IL IP S PHILIPS

Contextual Info: IN TE G R A TE D C lR C U fT S PCA1 6xx series 32 kHz watch circuits with EEPROM Product specification Supersedes data of September 1993 File under Integrated Circuits, IC16 Philips Semiconductors 1997 Apr 21 PHILIPS P h ilip s S e m i c o n d u c t o r s