DCR604SE Search Results

Contextual Info: GEC PL ES SE Y SI SEPTEMBER 1997 SEMI CO NDUC TOR S DS4450-3.2 DCR604SE PHASE CONTROL THYRISTOR KEY PARAMETERS 2100V DRM 562A Jt AV 8100A TSM dVdt* 1000V/(JS d l/d t 700A/(JS APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control.

DCR604SE

Abstract: DCR604SE17 DCR604SE18 DCR604SE19 DCR604SE20 DCR604SE21
Contextual Info: DCR604SE DCR604SE Phase Control Thyristor Advance Information Supersedes January 2000 version, DS4450-4.0 DS4450-5.0 July 2001 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 2100V ■ High Surge Capability IT AV 706A ITSM 8100A ■ High Mean Current

DCR604SE

Abstract: thyristor Vtm 6.5 DCR604SE17 DCR604SE18 DCR604SE19 DCR604SE20 DCR604SE21
Contextual Info: DCR604SE DCR604SE Phase Control Thyristor Advance Information Supersedes January 2000 version, DS4450-4.0 DS4450-5.0 July 2001 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 2100V IT AV 706A ITSM 8100A ■ High Surge Capability ■ High Mean Current

dcr604se

Abstract: dcr604se18 DS4450 DCR604
Contextual Info: M ITEL DCR604SE Phase Control Thyristor S E M IC O N D U C T O R Supersedes Septem ber 1997 version, DS4450 - 3.2 DS4450 - 3.3 APPLICATIONS • High Pow er Drives. ■ High V oltage Pow er Supplies. ■ DC M otor C ontrol. March 1998 KEY PARAMETERS 2100 V

DCR604SE

Abstract: DCR604SE17 DCR604SE18 DCR604SE19 DCR604SE20 DCR604SE21
Contextual Info: DCR604SE DCR604SE Phase Control Thyristor Advance Information Supersedes January 2000 version, DS4450-4.0 DS4450-5.0 July 2001 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 2100V ■ High Surge Capability IT AV 706A ITSM 8100A ■ High Mean Current

CR8-04

Abstract: 80G180 DCR604 2N684A 16RC15 C36G C141G 25SDG2JHKO S2512BK
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 20 25SDG2JHKO 25SDG2JHNO 2N1794 DCR604SE0202 DCR504ST0202 MCR67-6 MCR68-6 MCR69-6 ~g~j~:~ Motorola Cl08G NCR150B C15G 2Nl773 2Nl773A NCF150C HSE5053 ClOG g~~~ 25 30 NCF150D 2N1845 2N1845A 2N1845B C36G

DS4450

Contextual Info: @ M ITEL DCR604SE Phase Control Thyristor SEMICONDUCTOR Supersedes Septem ber 1997 version, DS4450 - 3.2 DS4450 - 3.3 APPLICATIONS March 1998 KEY PARAMETERS 2100V DRM 562A Jt AV 8100A TSM dVdt* 1000V/(is d l/d t 700A/(is • High Power Drives. ■ High Voltage Power Supplies.

Contextual Info: DCR604SE DCR604SE Phase Control Thyristor Advance Information Supersedes January 2000 version, DS4450-4.0 DS4450-5.0 July 2001 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 2100V IT AV 706A ITSM 8100A ■ High Surge Capability ■ High Mean Current

Contextual Info: DCR604SE DCR604SE Phase Control Thyristor Advance Information Supersedes January 2000 version, DS4450-4.0 DS4450-5.0 July 2001 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 2100V ■ High Surge Capability IT AV 706A ITSM 8100A ■ High Mean Current

DCR504ST

Abstract: DCR604SE DCR720E DCR803SG DCR806SG DCR818SG DCR820SG DCR504
Contextual Info: AN5001 Application Note AN5001 Use Of The VTO, rT On-state Characteristic Model Application Note Replaces July 2002 version, AN5001-4.1 AN5001-5.0 October 2002 The use of the VTO, rT on-state characteristic model and a more accurate alternative. where A, B, C and D are constants with values specific to the

2N2213

Abstract: 2N2046 2N2545 HI-TRON 2N2344 2N2546 transitron diodes 2N2503 2n2047 16RC15 2N2044
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N1847A Franel Corp Inti Rectfr IntlRect JA Semitronics St Semicon Trans-Tek 2N18478 Inti Device IntlRect IT Semitronics Texas Instr 2N1848 Franel Corp Inti Rectfr IntlRect JA Semicon Com Sensitron

DIODE GE

Abstract: DCR604SE DCR504S GE brand thyristor thyristor Vtm 6.5 DCR504ST DCR720E DCR803SG DCR806SG DCR818SG
Contextual Info: AN5001 Application Note AN5001 Use Of The VTO, rT On-state Characteristic Model Application Note Replaces February 2003 version, AN5001-6.0 AN5001-7.0 February 2004 The use of the VTO, rT on-state characteristic model and a more accurate alternative. where A, B, C and D are constants with values specific to the

ln 4871

Abstract: DCR504S
Contextual Info: AN5001 Use Of The VTO, rT On-state Characteristic Model Application Note AN5001-1.1 June 1998 The use of the VTO, rT on-state characteristic model and a more accurate alternative. The inclusion of the theoretical terms VTO and rT in power semiconductor data sheets allows a simple means of calculating power

BST45

Abstract: DCR806 DCR604SE
Contextual Info: phase control th y ris to rs discs 1 Pt D isc D evices l2t @ T v| V IT TO @ T v) @ T vl (kA) (A2sx103) (V) (mil) 717 6.8 231 1.05 1850 1045 1511 2694 3600 2900 1641 2374 4230 5655 32.5 14 26.25 50 61.2 5280 975 3440 12500 18750 100-2100 100-2800 100-2800