DC 20V MOTOR MATSUSHITA Search Results

playstation 2 power supply

Abstract: playstation 1 power supply SONY PLAYSTATION 3 sony playstation 3 power supply sony playstation 1 power supply sony playstation 2 power supply PLAYSTATION 3 power supply sony playstation 2 graphics synthesizer IBM GEKKO
Contextual Info: Discretes and MultiMarket ICs DMI – BL Power 07/08/2002 DMI – BL Power Sony, Playstation, Nintendo, Gamecube, Microsoft and Xbox are trademarks and property of their respective owners. Semiconductors ASPD / page:2 DMI – BL Power Technical • CPU: Sony "Emotion Engine”, 128 bit, 300 MHz

An6652

Abstract: 1500 rpm DC motor 9v dc 20v motor matsushita 12v dc motor tape recorder
Contextual Info: ICs for Motor AN6652 Motor Control Circuit • Overview + 0.5 Unit : mm 8.0 – 0.1 3.05 3.8 nt in ue Pl pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo

dc 20v motor matsushita

Abstract: dc 20v motor matsua AN6652 AN6652 application
Contextual Info: ICs for Motor AN6652 Motor Control Circuit • Overview + 0.5 Unit : mm 8.0 – 0.1 3.05 ■ Features • Small four-lead plastic package for compact motor. 15.0min. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing

Contextual Info: Power F-MOS FETs 2SK1406 Silicon N-Channel Power F-MOS FET • Features unit: mm 0.7 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply

PU7456

Contextual Info: Power Transistor Arrays F-MOS FETs PU7456 Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation

dc 20v motor matsushita

Abstract: 2SK2509
Contextual Info: 2SK2509 Power F-MOS FETs 2SK2509 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed ● High-speed 6.0±0.5 switching 10.0±0.3 ON-resistance 1.0±0.1 M Di ain sc te on na tin nc ue e/ d ● Low 3.4±0.3 8.5±0.2 1.5±0.1 ● Avalanche

chart polygon mirror motor

Abstract: 12v 15A dc motor speed controller circuit diagram laser disk spindle motor controller 12v bidirectional dc motor controller file polygon motor controller polygon mirror motor AN8245 AN8245K AN8245SCR voltage regulator input 120 volt
Contextual Info: ICs for Motor AN8245K, AN8245SCR Laser Disk Spindle Motor Controller • Overview AN8245K The AN8245K and AN8245SCR are speed control drive ICs of the brushless motors by means of the 3-phase fullwave current drive system. They are suitable for controlling/driving the laser disk spindle motors, LBP polygon

Contextual Info: Power F-MOS FETs 2SK2573 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm (2.0) ● Contactless relay ● Diving circuit for a solenoid

Contextual Info: 2SK2509 Power F-MOS FETs 2SK2509 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed ● High-speed switching ON-resistance secondary breakdown 1.0±0.1 M Di ain sc te on na tin nc ue e/ d ● No 6.0±0.5 10.0±0.3 ● Low 3.4±0.3

2SK1833

Abstract: TOP-220 TOP220 top 220 2sk18 ta202
Contextual Info: Power F-MOS FETs 2SK1833 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 90mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 30ns ● No secondary breakdown 16.7±0.3 7.5±0.2 4.0 14.0±0.5 Symbol

2sk2128

Abstract: dc 20v motor matsushita
Contextual Info: Power F-MOS FETs 2SK2128 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±20V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm

TOP-220

Contextual Info: Power F-MOS FETs 2SK1833 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 90mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 30ns ● No secondary breakdown 4.2±0.2 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2

Contextual Info: Power F-MOS FETs 2SK3033 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage

2sk2323

Contextual Info: 2SK758 Power F-MOS FETs 2SK2323 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown 3.0±0.2 15.0±0.3 ON-resistance M Di ain sc te on na tin nc ue e/

Contextual Info: Power F-MOS FETs 2SK3032 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage

2sk2324

Contextual Info: 2SK758 Power F-MOS FETs 2SK2324 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown 3.0±0.2 15.0±0.3 ON-resistance M Di ain sc te on na tin nc ue e/

Contextual Info: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage

Contextual Info: Power F-MOS FETs 2SK3027 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage

Contextual Info: Power F-MOS FETs 2SK3034 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage

Contextual Info: Power F-MOS FETs 2SK3026 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage

Contextual Info: Power F-MOS FETs 2SK2923 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/

Contextual Info: Power F-MOS FETs 2SK2327 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 3.0±0.3 M Di ain sc te on na tin nc ue e/ d φ3.2±0.1 Drain current

Contextual Info: Power F-MOS FETs 2SK2326 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 4.6±0.2 +0.5 13.7–0.2 15.0±0.3 ● Contactless relay ● Diving circuit for a solenoid

Contextual Info: Power F-MOS FETs 2SK3023 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage