DB45 Search Results

gsm module

Abstract: RJ12 connector Serial DB9 to RJ12 gsm module datasheet TC63 modem siemens modem gsm mc55 siemens TC65 RJ12 pin out RJ12 db9 MC45 siemens gsm
Contextual Info: Technical Description ACTE DB45/75 Development kit for Siemens GSM/GPRS/EDGE modules Acte DK45/75 is a starter kit for developing wireless application in the GSM band using Siemens GSM/GPRS/EDGE modules MC75, TC65, TC63 and MC55/56. The development kit contains all the necessary parts and documentation

lapp cable current rating

Abstract: H07V-K DB4520001EN X07V-K HD 21.3 Lapp cable LAPP conduit lapp
Contextual Info: U.I. Lapp GmbH DATA SHEET DB4520001EN valid from: 2010-08-20 H07V-K X07V-K MAKE-UP TYPE H07V-K CERTIFICATION H07V-K ◄HAR► (arrowheads can be blank also) according to harmonisation document HD 21.3/VDE 0281-3 APPLICATION (HD 516/VDE 0298-300) The single-conductor cable H07V-K is a flexible, non-sheathed cable for fix, internal wiring, that is, for fixed installation in pipes on, in and

KSC5601

Abstract: D8A1 KS0040 d6a1 16f7 1B60 H124 128X8 16X16 8X16
Contextual Info: KS0040 65 COM / 132 SEG DRIVER & CONTROLLER FOR STN LCD APRIL. 1999. KS0040 65COM/132SEG DRIVER & CONTROLLER FOR STN LCD KS0040 Specification Revision History Version 0.0 1.0 1.1 2 Content Original 1 Changed function MPU interface pin & method are changed.

CI 3060 elsys

Abstract: rs 3060 cj KS0090 KS* I2C driver LCD driver KS KS0090I SEG60
Contextual Info: Pre! iminary K S0090 26C O M /64SEG DRIVER & CONTROLLER FO R STN LCD Rev. 7.0 1. INTRODUCTION DOT MATRIX LCD CONTROLLER & DRIVER K S 0090/90-I K S 0090 / K S0090I is a d o t matrix LC D driver & controller LSI w hich is fabricated by low p o w e r C M O S technology. It can display 2 or 3 lines with 5 x 8 dots form a t.

hyundai rdram

Abstract: REF05
Contextual Info: HYRDU64164 / HYRDU72184 Series 64/72Mbit Direct RDRAM • HYUNDAI Advanced Information O verview The Direct Rambus™ DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and

da53

Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
Contextual Info: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and

da53

Abstract: uPD488385FB-C60-53-BF1 uPD488385FB-C80-40-BF1 uPD488385FB-C80-45-BF1 uPD488385FB-C80-50-BF1
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD488385 72 M-bit 256K x 18 x 16d Direct Rambus DRAM Description The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where

4458D

Abstract: INTF2300 capacitor ceramic variable RF power supply ic 1507 toko balun MAX2310 MAX2310EVKIT MAX2312 MAX2312EVKIT MAX2314
Contextual Info: 19-1507; Rev 0a; 8/99 MAX2310/MAX2314 Evaluation Kits The MAX2310/MAX2314 evaluation kits EV kits simplify testing of the MAX2310/MAX2314 IF receivers. These kits allow evaluation of the devices’ variable-gain amplifier (VGA), I/Q demodulator, dual-band voltage-controlled oscillators (VCOs), synthesizer, 3-wire programming interface and power-management features.

direct rdram rambus 1200

Contextual Info: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high

da53

Abstract: DB26 0195c Outline T39
Contextual Info: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other

da53

Abstract: DB26
Contextual Info: 1066 MHz RDRAMâ 512/576 Mb 8Mx16/18x4i Advance Information Overview • The 1066 MHz Rambus DRAM (RDRAMâ) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any

Contextual Info: TOSHIBA TENTATIVE TC59R7218XB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAM Direct RDRAMTM ¡s a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video,

METAL OXIDE VARISTOR application note on AC

Abstract: MOV surge on AC mains MOV SUPPRESSOR Transient Voltage Suppression Devices, Harris Metal-Oxide Varistor METAL OXIDE VARISTOR application note on AC mains varistor 6kv 3ka V130LA10A harris varistor transient voltage suppressor diode
Contextual Info: Harris Semiconductor No. AN9306 Harris MOVs August 1993 The New “C” III Series of Metal Oxide Varistors Authors: Martin Corbett and Paul Durnin Introduction The development of more sophisticated and less expensive semiconductors over the last 5 - 10 years has resulted in a

Surgector

Abstract: DB450 P3100SB UL497B P0640SB surge GR-1089 SGT0640SBT V-I characteristics of SIDAC P1300
Contextual Info: An Introduction to the Surface Mount Surgector TVS Technical Brief July 1999 TB373.1 Author: Don Tidey [ /Title TB37 3 /Subject (An Introduction to the Surface Mount Surgec tor TVS) /Autho r () /Keywords (Harris Suppression Products, surface mount surgect

Contextual Info: Preliminary STP2220ABGA S un M ic r o e l e c t r o n ic s J u ly 1997 U2S UPA-to-SBus Interface DATA SHEET D e s c r ip t io n The STP2220ABGA U2S ^ device bridges UPA- UltraSPARC Port Architecture to the SBus. U2S, is the prim ary connection betw een the UPA port (including UltraSPARC-1 processors and m em ory) and the SBus

HYB25M144180C-653

Abstract: HYB25R128160C-653 HYB25R128160C-745 HYB25R128160C-840 HYB25R128160C-845 HYB25R144180C-653 HYB25R144180C-745 HYB25R144180C-840 HYB25R144180C-845 Direct rdram
Contextual Info: Direct RDRAM 128/144-MBit 256Kx16/18×32s Overview The Rambus Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.

diode t29

Abstract: EDR2518ABSE EDR2518ABSE-8C-E T45 to DB9 EDR2518ABSE-8C EDR2518ABSE-AD EDR2518ABSE-AE EDR2518ABSE-AE-E EDR2518ABSE-AEP EDR2518ABSE-AEP-E
Contextual Info: PRELIMINARY DATA SHEET 288M bits Direct Rambus  DRAM EDR2518ABSE 512K words x 18 bits × 32s banks Description Features The EDR2518AB (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including

da53

Abstract: DB26 BE1210 DB62 ROP10
Contextual Info: RAMBUS Direct RDRAM Preliminary Information 256/288-Mbit 512Kx16/18x32s Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application

da53

Abstract: DB26 DL010
Contextual Info: RAMBUS Direct RDRAM Preliminary Information 256/288-Mbit 1Mx16/18x16d Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application

LA25-P

Abstract: DC1931 SEAM-10X40 LTM9013
Contextual Info: DEMO MANUAL DC1931B LTM9013 300MHz Wideband/DPD Receiver Description Demonstration circuit DC1931 is a 300MHz wideband/ digital pre-distortion DPD receiver subsystem featuring the LTM 9013. The DC1931 card is designed to plug into the DC1371 data acquisition demo board. It is configured

BS2779 BSP THREAD

Abstract: IEC60079-14 EX-35-B-1-0-20-M20 M32 nylon cable gland 602 GB Series AMPHENOL dts01 galvanised conduit hazardous area ZP-C-2520-12 Radsok Amphenol Radsok
Contextual Info: Amphenol Cable Glands and Cord Grips 12-055 Amphenol Table of Contents Introduction Amphenol® Cable Glands Page Number 1 2-3 ATEX Approved Glands Featuring Elastometric Seals EX-20 4-5 EX-25 6-7 EE-30 8-9 EX-35 10-11 EX-40 12-13 EX-45 14-15 EE-RG 16-17

RDRAM Clock

Contextual Info: Direct RDRAM PRELIMINARY 128/144-Mbit 256Kx16/18x32s Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and

Contextual Info: DB4 SERIES E 1.10 max. 27.94 mm .500 ± .062 PART NUMBER INDUCTANCE µH @ 1kHz 38.10 mm Designed for switching supply applications. 40 standard items. Inductance range 10µH to 15000µH. Current ratings from .85 to 22.1 amps. Epoxy insulated core. Operating temperature: -55° to +125°C.

METAL OXIDE VARISTOR application note on AC mains

Abstract: MOV surge on AC mains varistor 6kv 3ka mov 6kv 3ka varistor 6kv varistor application note on AC mains C280A Harris Semiconductor TRANSIENT SURGE SUPPRESSOR metal oxide varistor DC "Transient Voltage Suppressor"
Contextual Info: The “C” III Series of Metal Oxide Varistors SEE TION 1, A M 931 FOR D IN TES AN E T A N NO UPD 69 FOR LICATIO 8, AN97 P 3 P 9 A AN August 1999 AN9306.2 Introduction The Transient Environment Transient voltages can result from the sudden release of previously stored energy. Transients are sudden short term