DATA TRANSISTOR 1650 Search Results
DATA TRANSISTOR 1650 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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NFMJMPC226R0G3D | Murata Manufacturing Co Ltd | Data Line Filter, | |||
NFM15PC755R0G3D | Murata Manufacturing Co Ltd | Feed Through Capacitor, | |||
NFM15PC435R0G3D | Murata Manufacturing Co Ltd | Feed Through Capacitor, | |||
NFM15PC915R0G3D | Murata Manufacturing Co Ltd | Feed Through Capacitor, | |||
MP-52RJ11SNNE-015 |
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Amphenol MP-52RJ11SNNE-015 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 15ft |
DATA TRANSISTOR 1650 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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LLE16350X
Abstract: BDT91 BY239
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LLE16350X SCA53 127121/00/04/pp12 LLE16350X BDT91 BY239 | |
diode BY239
Abstract: BD239 BY239 LLE16045X
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LLE16045X SCA53 127147/00/02/pp12 diode BY239 BD239 BY239 LLE16045X | |
blf175
Abstract: ferroxcube 4322 020 97171 MGP063 ferroxcube wideband hf choke
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M3D065 BLF175 MBB072 MSB057 OT123A SCA75 613524/03/pp21 blf175 ferroxcube 4322 020 97171 MGP063 ferroxcube wideband hf choke | |
rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
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REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 | |
philips ferroxcube 4c6
Abstract: mgp063 BLF175 PHILIPS HF CHOKE type 4330 hf amplifier for transformer D1 Marking SOT123 PHILIPS toroidal core MGP080 ferroxcube 4C6 ferroxcube 4322 020 97171
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BLF175 MBB072 MSB057 OT123 philips ferroxcube 4c6 mgp063 BLF175 PHILIPS HF CHOKE type 4330 hf amplifier for transformer D1 Marking SOT123 PHILIPS toroidal core MGP080 ferroxcube 4C6 ferroxcube 4322 020 97171 | |
NP20P04SLG
Abstract: PT138
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NP20P04SLG NP20P04SLG NP20P04SLG-E1-AY NP20P04SLG-E2-AY O-252 O-252) PT138 | |
NP20P06
Abstract: NP20P06SLG NP20P06SLG-E1-AY NP20P06SLG-E2-AY PT138
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NP20P06SLG NP20P06SLG NP20P06SLG-E1-AY NP20P06SLG-E2-AY O-252 O-252) NP20P06 NP20P06SLG-E1-AY NP20P06SLG-E2-AY PT138 | |
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-60A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable tor surface mount applications. The device is intended for use in |
OCR Scan |
BUK465-60A SQT404 | |
BUK465-60AContextual Info: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION BUK465-60A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in |
OCR Scan |
BUK465-60A OT404 BUK465-60A | |
BUK455-50A
Abstract: BUK455-60 BUK465-60A buk455-50
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BUK465-60A OT404 BUK455-50A BUK455-60 BUK465-60A buk455-50 | |
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in |
OCR Scan |
BUK465-100A | |
O2SCContextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in |
OCR Scan |
BUK465-100A SQT404 O2SC | |
BUK455-100A
Abstract: BUK455-100 BUK465-100A
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BUK465-100A OT404 BUK455-100A BUK455-100 BUK465-100A | |
T160RContextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in |
OCR Scan |
BUK465-100A SQT404 T160R | |
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
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2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 | |
A17980Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D065 BLF175 HF/VHF power MOS transistor Product specification Supersedes data of 1997 Dec 15 2003 Jul 22 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 PIN CONFIGURATION FEATURES • High power gain |
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M3D065 BLF175 MBB072 MSB057 OT123A SCA75 613524/03/pp21 A17980 | |
y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
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500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 | |
Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
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2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp | |
Contextual Info: PSMN002-25P; PSMN002-25B N-channel enhancement mode field-effect transistor Rev. 01 — 22 October 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: |
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PSMN002-25P; PSMN002-25B PSMN002-25P O-220AB) PSMN002-25B OT404 OT404, | |
NP88N03KUGContextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N03KUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP88N03KUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP88N03KUG TO-263 MP-25ZK |
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NP88N03KUG NP88N03KUG O-263 MP-25ZK) O-263) | |
NP88N03KDGContextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N03KDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP88N03KDG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP88N03KDG TO-263 MP-25ZK |
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NP88N03KDG NP88N03KDG O-263 MP-25ZK) O-263) | |
MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
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1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 | |
Contextual Info: N AMER PHILIPS/DISCRETE DEVELOPMENT DATA OLE D ~m LbS3T31 DDmTfc,3 • LTE21025R This data sheat contains advance Information and specifications are subject to change w ithout notice. J V r- 2 1 - 0 *? MICROWAVE LINEAR POWER TRANSISTOR N-P’ N Silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4,2 GHz. |
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LbS3T31 LTE21025R FO-41B) | |
Contextual Info: PBSS4041NX 60 V, 6.2 A NPN low VCEsat BISS transistor 11 December 2012 Product data sheet 1. Technical summary NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. |
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PBSS4041NX SC-62) PBSS4041PX. AEC-Q101 |