DATA TRANSISTOR 1650 Search Results

blf175

Abstract: ferroxcube 4322 020 97171 MGP063 ferroxcube wideband hf choke
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF175 HF/VHF power MOS transistor Product specification Supersedes data of 1997 Dec 15 2003 Jul 22 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF175 PIN CONFIGURATION • High power gain

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

BUK465-60A

Contextual Info: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION BUK465-60A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

BUK455-50A

Abstract: BUK455-60 BUK465-60A buk455-50
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-60A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

BUK455-100A

Abstract: BUK455-100 BUK465-100A
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

A17980

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D065 BLF175 HF/VHF power MOS transistor Product specification Supersedes data of 1997 Dec 15 2003 Jul 22 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 PIN CONFIGURATION FEATURES • High power gain

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

Contextual Info: PSMN002-25P; PSMN002-25B N-channel enhancement mode field-effect transistor Rev. 01 — 22 October 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

NP88N03KDG

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N03KDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP88N03KDG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP88N03KDG TO-263 MP-25ZK

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

Contextual Info: N AMER PHILIPS/DISCRETE DEVELOPMENT DATA OLE D ~m LbS3T31 DDmTfc,3 • LTE21025R This data sheat contains advance Information and specifications are subject to change w ithout notice. J V r- 2 1 - 0 *? MICROWAVE LINEAR POWER TRANSISTOR N-P’ N Silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4,2 GHz.

c5750x7s2a106m

Abstract: AD255A mosfet mttf aft20p06
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.

TRANSISTOR SMD MARKING CODE 6d

Abstract: smd transistor 6d PBSS4021NX
Contextual Info: PBSS4021NX 20 V, 7 A NPN low VCEsat BISS transistor 11 December 2012 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.

fqmb

Abstract: LD 25 V BUK793-60A philips ah 686
Contextual Info: Philips Components Data sheet status P re lim in a ry s p e c ific a tio n date of issue PHILIPS March 1991 BUK793-60A PowerMOS transistor SensorFET INTERNATIONAL SbE ]> Li GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a

TRANSISTOR SMD MARKING CODE 6d

Abstract: smd transistor 6d
Contextual Info: PBSS4021NX 20 V, 7 A NPN low VCEsat BISS transistor 9 October 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP

igbt 20A 1200v

Abstract: TRANSISTOR BIPOLAR 400V 20A IRGPH40S
Contextual Info: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz

sot089

Contextual Info: PBSS4041NX 60 V, 6.2 A NPN low VCEsat BISS transistor 10 October 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP

TL 650 ht

Abstract: BUK793-60A d0ss BUK7y3-60A buk793 vmk 5 pin
Contextual Info: Philips Com ponents Data sheet status P re lim in a ry s p e c ific a tio n March 1991 date of issue BUK793-60A PowerMOS transistor SensorFET PHILIPS INTERNATIONAL fa , SbE J> m — GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

TRANSISTOR SMD CODE PACKAGE SOT89

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 4
Contextual Info: PBSS4021PX 20 V, 6.2 A PNP low VCEsat BISS transistor Rev. 01 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS4041NX 60 V, 6.2 A NPN low VCEsat BISS transistor Rev. 01 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.