Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DATA TRANSISTOR 1650 Search Results

    DATA TRANSISTOR 1650 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MP-52RJ11SNNE-010
    Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-010 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 10ft PDF
    MP-52RJ11UNNE-015
    Amphenol Cables on Demand Amphenol MP-52RJ11UNNE-015 CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 15ft PDF
    MP-52RJ11SNNE-007
    Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-007 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 7ft PDF
    MP-52RJ11UNNE-010
    Amphenol Cables on Demand Amphenol MP-52RJ11UNNE-010 CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 10ft PDF
    MP-52RJ11SNNE-015
    Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-015 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 15ft PDF

    DATA TRANSISTOR 1650 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    LLE16350X

    Abstract: BDT91 BY239
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE16350X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 03 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


    Original
    lle16350xsca53127121/00/04/pp12bdt91+1by239 PDF

    diode BY239

    Abstract: BD239 BY239 LLE16045X
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE16045X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


    Original
    lle16045xsca53127147/00/02/pp12diode by239+2bd239by239 PDF

    blf175

    Abstract: ferroxcube 4322 020 97171 MGP063 ferroxcube wideband hf choke
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF175 HF/VHF power MOS transistor Product specification Supersedes data of 1997 Dec 15 2003 Jul 22 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF175 PIN CONFIGURATION • High power gain


    Original
    m3d065blf175mbb072msb057+6ot123asca75613524/03/pp21ferroxcube 4322 020 97171mgp063ferroxcube wideband hf choke PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original
    rej01g0001-0400rjh3047rjh3077rjp3047+7rjh3047dpkrjp3049rjp6065rjp3053rjp3042smd code fx mosfetrjp6055 PDF

    philips ferroxcube 4c6

    Abstract: mgp063 BLF175 PHILIPS HF CHOKE type 4330 hf amplifier for transformer D1 Marking SOT123 PHILIPS toroidal core MGP080 ferroxcube 4C6 ferroxcube 4322 020 97171
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF175 HF/VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF175 PIN CONFIGURATION • High power gain • Low intermodulation distortion


    Original
    blf175mbb072msb057ot123+9philips ferroxcube 4c6mgp063philips hf choke type 4330hf amplifier for transformerd1 marking sot123philips toroidal coremgp080ferroxcube 4c6ferroxcube 4322 020 97171 PDF

    NP20P04SLG

    Abstract: PT138
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP20P04SLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP20P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP20P04SLG-E1-AY Note


    Original
    np20p04slgnp20p04slg-e1-aynp20p04slg-e2-ayo-252+1pt138 PDF

    NP20P06

    Abstract: NP20P06SLG NP20P06SLG-E1-AY NP20P06SLG-E2-AY PT138
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP20P06SLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP20P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP20P06SLG-E1-AY Note


    Original
    np20p06slgnp20p06slg-e1-aynp20p06slg-e2-ayo-252+2np20p06pt138 PDF

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-60A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable tor surface mount applications. The device is intended for use in


    OCR Scan
    buk465-60asqt404 PDF

    BUK465-60A

    Contextual Info: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION BUK465-60A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in


    OCR Scan
    buk465-60aot404 PDF

    BUK455-50A

    Abstract: BUK455-60 BUK465-60A buk455-50
    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-60A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in


    Original
    buk465-60aot404buk455-50abuk455-60+1buk455-50 PDF

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in


    OCR Scan
    buk465-100a PDF

    O2SC

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in


    OCR Scan
    buk465-100asqt404o2sc PDF

    BUK455-100A

    Abstract: BUK455-100 BUK465-100A
    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in


    Original
    buk465-100aot404buk455-100abuk455-100 PDF

    T160R

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in


    OCR Scan
    buk465-100asqt404t160r PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan
    2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931 PDF

    A17980

    Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D065 BLF175 HF/VHF power MOS transistor Product specification Supersedes data of 1997 Dec 15 2003 Jul 22 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 PIN CONFIGURATION FEATURES • High power gain


    Original
    m3d065blf175mbb072msb057+4ot123asca75613524/03/pp21a17980 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711 PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan
    2phx11136q-17motorola transistors mrf 947trimpots 3296transistor c5386+71n47402n5591 motorola2n5688cq 542 transistor npn motorolaequivalent transistor of 2sc3358hb215/dic cd 2399 gp PDF

    Contextual Info: PSMN002-25P; PSMN002-25B N-channel enhancement mode field-effect transistor Rev. 01 — 22 October 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original
    psmn002-25ppsmn002-25bo-220abot404 PDF

    NP88N03KUG

    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N03KUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP88N03KUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP88N03KUG TO-263 MP-25ZK


    Original
    np88n03kugo-263mp-25zk PDF

    NP88N03KDG

    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N03KDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP88N03KDG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP88N03KDG TO-263 MP-25ZK


    Original
    np88n03kdgo-263mp-25zk PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan
    1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503 PDF

    Contextual Info: N AMER PHILIPS/DISCRETE DEVELOPMENT DATA OLE D ~m LbS3T31 DDmTfc,3 • LTE21025R This data sheat contains advance Information and specifications are subject to change w ithout notice. J V r- 2 1 - 0 *? MICROWAVE LINEAR POWER TRANSISTOR N-P’ N Silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4,2 GHz.


    OCR Scan
    lbs3t31lte21025rfo-41b PDF

    Contextual Info: PBSS4041NX 60 V, 6.2 A NPN low VCEsat BISS transistor 11 December 2012 Product data sheet 1. Technical summary NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.


    Original
    pbss4041nxsc-62pbss4041pxaec-q101 PDF