DA28F320 Search Results

DA28F320J5

Contextual Info: CIC-56SS-40D-B6-TI 56-Lead SSOP to a 40-Pin DIP Mar-98 EXAMPLES SSOP DEVICES: A DA28F016XS DA28F160S3 / S5 B DA28F320S3 / S5 C PIN CONFIGURATION: DA28F320J5 DA28F640J5 SOCKET: Texas Instruments CSP056-054 PRICING: QTY PRICE EACH 1-4 5-9 10-24 25-49 $180.00

CIC-56SS-48D-B6-TI

Abstract: DA28F320j5 DA28F160S3 DA28F640J5
Contextual Info: CIC-56SS-48D-B6-TI 56-Lead SSOP to a 48-Pin DIP Mar-98 EXAMPLES SSOP DEVICES: A DA28F016XS DA28F160S3 / S5 B DA28F320S3 / S5 C PIN CONFIGURATION: BASE 48-Pin DIP DA28F320J5 DA28F640J5 SOCKET: Texas Instruments CSP056-054 PRICING: QTY PRICE EACH 1-4 5-9 10-24

"NOR Flash" intel 28f

Abstract: 29060
Contextual Info: PRELIMINARY intei 5 VOLT INTEL StrataFlash MEMORY 28F320J5 and 28F640J5 x8/x16 High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) Cross-Compatible Command Support — Intel Basic Command Set

F1H16

Abstract: 29060
Contextual Info: PRODUCT PREVIEW INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT 28F320J5 and 28F640J5 High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks 64 M — 32 128-Kbyte Erase Blocks (32 M) Cross-Compatible Command Support — Intel Basic Command Set

5 PEN PC TECHNOLOGY free

Contextual Info: ADVANCE INFORMATION INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT 28F320J5 a n d 28F640J5 High-Density Sym m etrically-Blocked A rchitecture — 64 128-Kbyte Erase Blocks 64 M — 32 128-Kbyte Erase Blocks (32 M) Cross-Com patible Command Support

intel topside mark

Abstract: 28F320J5 28F640J5 DA28F320J5-100 DA28F320J5-120 DA28F640J5-150 E28F320J5-100 E28F320J5-120 G28F640J5-150 intel DOC
Contextual Info: Intel StrataFlash Memory 32 and 64 Mbit SPECIFICATION UPDATE Release Date: September 1998 Order Number: 297848-010 The 28F320J5 and 28F640J5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

292235

Abstract: 28F016SV 28F160S5 28F320J5 28F640J5
Contextual Info: 5 Volt Intel StrataFlash Memory 28F320J5 and 28F640J5 x8/x16 Preliminary Datasheet Product Features • ■ ■ ■ ■ High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) 4.5 V–5.5 V VCC Operation

160S5

Abstract: e28f160s5-70 IR3637 28F016SA 28F016SV 28F160S3 28F160S5 28F320S5 A0-A21 297372
Contextual Info: irrtel, ADVANCE INFORMATION WORD-WIDE FlashFile MEMORY FAMILY 28F160S5, 28F320S5 Includes Extended Temperature Specifications Two 32-Byte Write Buffers — 2 jxs per Byte Effective Programming Time Operating Voltage Cross-Compatible Command Support — Intel Standard Command Set

phase controller L120

Abstract: 28F032SA 28F160S5 28F320J5 28F320S5 28F640J5 "NOR Flash" intel retention
Contextual Info: E PRODUCT PREVIEW INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT 28F320J5 and 28F640J5 n n n n n n High-Density Symmetrically-Blocked Architecture  64 128-Kbyte Erase Blocks 64 M  32 128-Kbyte Erase Blocks (32 M) 5V VCC Operation  2.7V I/O Capable

29060

Contextual Info: 5 Volt Intel StrataFlash Memory 28F320J5 and 28F640J5 x8/x16 Preliminary Datasheet Product Features • ■ ■ ■ ■ High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) 4.5 V–5.5 V VCC Operation

AP-647

Abstract: 29060
Contextual Info: 5 Volt Intel StrataFlash Memory 28F320J5 and 28F640J5 x8/x16 Preliminary Datasheet Product Features • ■ ■ ■ ■ High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) 4.5 V–5.5 V VCC Operation

29060

Contextual Info: 5 Volt Intel StrataFlash Memory 28F320J5 and 28F640J5 x8/x16 Preliminary Datasheet Product Features • ■ ■ ■ ■ High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) 4.5 V–5.5 V VCC Operation

E28F320J5A-120

Abstract: da28f640j5a150 28F016SA 28F016SV 28F032SA 28F160S5 28F320J5 28F640J5 Migration Guide for Intel StrataFlash Memory J 03BCD
Contextual Info: 5 Volt Intel StrataFlash Memory 28F320J5 and 28F640J5 x8/x16 Datasheet Product Features • ■ ■ ■ ■ High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) 4.5 V–5.5 V VCC Operation

Contextual Info: PRODUCT PREVIEW in te i INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT 28F320J5 and 28F640J5 High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks 64 M — 32 128-Kbyte Erase Blocks (32 M) 5V Vcc Operation — 2.7V I/O Capable

297848

Abstract: DA28F320j5 120 g28F640j5 28F320J5 28F640J5 DA28F320J5-100 DA28F320J5-120 DA28F640J5-150 E28F320J5-120 G28F640J5-150
Contextual Info: 5 Volt Intel StrataFlash Memory 28F320J5 and 28F640J5 Specification Update May 2002 Notice: The 28F320J5 and 28F640J5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized

TN80C196KC20

Abstract: TE28F800B3TA120 N80C51FA1 TN80C196KB16 N80C31BH1 TE28F008B3T115 N80C196KC20 DT28F320S5-90 TE28F160F3T120 N80C3224
Contextual Info: Product Change Notification Please respond to your distributor if you have any issues with the timeline or content of this change. No response from customers will be deemed as acceptance of the change and the change will be implemented pursuant to the key milestones set forth in this attached PCN.

Device-List

Abstract: NEC D2716D novatek nt68f63 nt68f63 NEC D2732D D2716D 16V8H-25 ATMEL 220 24C16 D2732D 16V8H-15
Contextual Info: LabTool-48 Version 4.67 <ALL> Device List Page 1 of 20 ACTRANS AC29LV400B *44PS AC29LV400B *48TS AC29LV400T *44PS AC29LV400T *48TS ALi M6759 M6759 *44 M6759 *44Q M8720 Alliance AS29F040 AS29LV800T *48TS AS29LV800B *44PS AS29LV800B *48TS AS29LV800T *44PS Altera

DA28F640

Abstract: 29060 A1A22
Contextual Info: 5 Volt Intel StrataFlash Memory 28F320J5 and 28F640J5 x8/x16 Preliminary Datasheet Product Features • ■ ■ ■ ■ High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) 4.5 V–5.5 V VCC Operation

DT28F320S5-90

Abstract: q371 DT28F320S590 TE28F160S570 TE28F160S5-70 DT28F320-S590 DT28F160S5-70 INTEL FLASH MEMORY pcn TE28F160S375 SB93
Contextual Info: Product Change Notification Product Change Notification Please respond to your distributor if you have any issues with the timeline or content of this change. No response from customers will be deemed as acceptance of change and the change will implement according to the key milestones given.

NEC D2732D

Abstract: nt68f63 novatek nt68f63 d2716d NEC D2716D atc 93lc46 D2732D CIRCUIT NEC D2716D TMS87C510 16V8H-25
Contextual Info: Dataman-48 Version 4.30 <ALL> Device List ALi M6759 www.dataman.com M6759 *44 M6759 *44Q M8720 AS29LV800B *44PS AS29LV800B *48TS AS29LV800T *44PS Altera EP1210 EP220 EP312 EP330 EP900 EP910-T EPC1064 EPC1213 EPC1441 as 1213 EPM3064A *44 EPM5192 @84 EPM7032AEas7032 *44

Contextual Info: Date: 12-2-13 Source Control Drawing QM: 6121 P/N: FT28F160S5-70 BS EN ISO 9001:2000 Accreditation AS9100 REV C Upscreening/Manufacturing Specification Document Contents Reference Documents Source of Parts Original Part Manufacturer/Donor Supplier Screening

Contextual Info: INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT 28F320J5 and 28F640J5 • High-Density Sym m etrically-Blocked Architecture — 64 128-Kbyte Erase Blocks 64 M — 32 128-Kbyte Erase Blocks (32 M) ■ C ross-Com patible Command Support — Intel Basic Command Set

2dh04

Contextual Info: in U ADVANCE INFORMATION WORD-WIDE FlashFile MEMORY FAMILY 28F160S5, 28F320S5 Includes Extended Temperature Specifications T w o 3 2 -B y te W rite B uffers — 2 ^ p er B yte E ffec tiv e P ro g ram m in g T im e O p e ra tin g V o lta g e — 5VVcc — 5V Vpp