DA 9394 Search Results

MO-224

Abstract: microDIMM DDR2-400 HYS64T32000GDL HYS64T64020GDL
Contextual Info: Da t a S he et , V 0. 8 2 , O c t. 2 00 3 HYS6 4T320 00GDL 2 5 6 M B y t e HYS6 4T640 20GDL ( 5 1 2 M B y t e ) D D R 2 S ma l l O u t l i n e DIM M Mod ules M em or y P r od uc t s N e v e r s t o p t h i n k i n g . HYS64T32000GDL HYS64T64020GDL Preliminary Datasheet Rev. 0.82 (10.03)

HYS64T128020GU

Abstract: HYS64T32000GU HYS64T64000GU HYS72T128020GU HYS72T64000GU
Contextual Info: Da ta S h e et , V 0. 84 , J a n. 2 00 4 H YS64 T 320 00 GU 2 56 M B y t e H YS64 T 640 00 GU (5 12 M B y t e ) H YS72 T 640 00 GU (5 12 M B y t e E C C ) H YS64 T 128 02 0GU ( 1 G B y t e ) H YS72 T 128 02 0GU ( 1 G B y t e E C C ) DDR 2 Unb uffe r ed DIMM Mo dul es

ddr2 5300

Abstract: cs 1694 DDR2-400 DDR2-533 HYS72T32000GR HYS72T64001GR HYS72T64020GR PC2-3200 PC2-3200R
Contextual Info: Da ta Sh e et , V 0. 2 2, Fe b. 2 00 4 H YS72 T 320 00 GR 2 56 M B y t e H YS72 T 640 01 GR (5 12 M B y t e ) H YS72 T 640 20 GR (5 12 M B y t e ) DDR 2 Reg istered D IMM Modu les M em or y P r od uc t s N e v e r s t o p t h i n k i n g . HYS72T32000GR, HYS72T64001GR

pc2-5300u

Abstract: DDR2-400 DDR2-533 PC2-3200 PC2-4300 ddr infineon hyb
Contextual Info: Da t a S he et , V 0. 2 , O c t. 2 00 3 H YS64 T 160 00 GU 1 28 M B y t e H YS72 T 320 00 GU (2 56 M B y t e E C C ) DDR 2 Unb uffe r ed DIMM Mo dul es M em or y P r od uc t s N e v e r s t o p t h i n k i n g . HYS64T16000GU HYS72T32000GU Preliminary Datasheet Rev. 0.2 (10.03)

arcotronics mkp 1.44

Abstract: m6t35 ARCOTRONICS MKP 1.44 7.5 condensatori ARCOTRONICS MKP 1.44 2 arcotronics C94 C92-C9C arcotronics c92 ARCOTRONICS MKP 1.44/ A arcotronics mkp
Contextual Info: Indice: Condensatori monofase – C93 Condensatori monofase – C20 Condensatori trifase – C9T Condensatori trifase modulari – C88 Condensatori trifase modulari impregnati – C21 Quadri automatici rifasamento – C94 Quadri automatici rifasamento – C92 – C9C

7476 truth table

Abstract: 7474 truth table fairchild 9322 se 9315-1 signetics 8281 7474 equivalent 9N73/7473 82S62 signetics 8235 93178
Contextual Info: SELECTOR GUIDE/FUNCTIONAL INDEX MSI MULTIPLEXERS Function Type No. Enable Input Comple­ mentary O u tp ut 9322 93L22 Dual 4 -Input 9309 93L09 93153 X X X X Single 8 -In p u t 9312 93L12 93S12 9313 93151 93152 X X X X X X 93150 X X X X X X X Page No. Data Z

TAG 9322

Abstract: 49570 DMD5602 200mvr 5602 46330 9975 5602V
Contextual Info: DMD 56021 10CH SELECTOR FOR CORDLESSPHONE 16DP Unit mm The DMD5602 channel selector is a CMOS inte­ grated circuit designed speaficaiy to select 10 chan­ nels used in 46/49MHz cordess phones. This device has programmable counter, reference frequency gen­

BD 4914

Abstract: BD 4908 fm metal case REGULATOR IC 7812 pin diagram REGULATOR IC 7809 MSP 34250 D 8227 audio amplifier bd 9969 analog frequency divider ic 200 khz crystal Nippon capacitors
Contextual Info: Order this docum ent by MC13109/D M MOTOROLA — Advance Information Universal Cordless Telephone Subsystem 1C UNIVERSAL CT-1 SUBSYSTEM INTEGRATED CIRCUIT The M C 13109 integrates several of the functions required for a cordless telephone into a single integrated circuit. This significantly reduces

SANSUI all circuit diagram

Abstract: sansui tv diagram digital ic cd 4074 ic 7490 which divide by 2 SANSUI all tv circuit diagram ic 7490 which divide by 5 cd 4074 BD 4914 SANSUI diagram chip amp ba 4908
Contextual Info: Order this docum ent by MC13108/D ^ MOTOROLA Advance Information Universal Cordless Telephone Subsystem 1C UNIVERSAL CT-1 SUBSYSTEM INTEGRATED CIRCUIT The MC13108 integrates several of the functions required for a cordless telephone into a single integrated circuit. This significantly reduces

mh2s64cxjj10

Contextual Info: Preliminary Spec. Some contents are subject to change without notice. MITSUBISHI LSIs MH2S64CXJJ-10,-12,-15 134217728-BIT 2097152-WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH2S64CXJJ is 2097152-word by 64-bit Synchronous DRAM module. This consists of eight

MH4S64CBMD-10

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH4S64CBMD-10,-12,-15,-10B,-12B,-15B 268435456-BIT 4194304-WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH4S64CBMD is 4194304-word by 64-bit Synchronous DRAM module. This consists of sixteen

MH1S72CPG-10

Abstract: JEP-108E
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH1S72CPG-10,-12,-15 75497472-BIT 1048576-WORD BY 72-BIT SynchronousDRAM DESCRIPTION The MH1S72CPG is 1048576-word by 64-bit Synchronous DRAM module. This consists of five

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH4S72CMD-10,-12,-15,-10B,-12B,-15B 301989888-BIT 4194304-WORD BY 72-BIT SynchronousDRAM DESCRIPTION The MH4S72CMD is 4194304-word by 72-bit Synchronous DRAM module. This consists of

MIT-DS-0105-2

Abstract: MITSUBISHI date code
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH2S72CMD-10,-12,-15,-10B,-12B,-15B 150994944-BIT 2097152-WORD BY 72-BIT SynchronousDRAM DESCRIPTION The MH2S72CMD is 2097152-word by 72-bit Synchronous DRAM module. This consists of nine

MH2S64CBLD-10

Abstract: MH2S64CBLD
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH2S64CBLD-10,-12,-15,-10B,-12B,-15B 134217728-BIT 2097152-WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH2S64CBLD is 2097152-word by 64-bit Synchronous DRAM module. This consists of eight

MH4S64CCMD-10B

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH4S64CCMD-10,-12,-15,-10B,-12B,-15B 268435456-BIT 4194304-WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH4S64CCMD is 4194304-word by 64-bit Synchronous DRAM module. This consists of sixteen

Contextual Info: Prelim inary Spee„ iu ii_ io w e /ie ra A i-7 Some of contents are subject to change w ithout notice. |y | y 0 4 * 3 ^ TSI^ ISHILS|S J 0 j™ * _ HYPER PAGE MODE 16777216-BIT 2097152-BIT BY 64-BIT DYNAMIC RAM PIN CONFIGURATION DESCRIPTION

AMC-250

Abstract: amc 250
Contextual Info: v •I BROADBAND GaAs FET AMPLIFIER M O DELS A M -/A M C -2 5 0 150 M H z -5 .2 G H z G AIN:11 dB > 2 Decade Bandwidth +19 dBm Compression Point + 30 dBm Typical Intercept Internal Voltage Regulator Guaranteed Specifications* From - 5 5 °C to + 8 5 °C Case Tem p

TMS626812

Contextual Info: TM2SN64EPU 2097152 BY 64-BIT TM4SN64EPU 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES SMMS681 - AUGUST 1997 • • • • • • • • Organization: - TM2SN64EPU . . . 2 097 152 x 64 Bits - TM4SN64EPU . . . 4 194 304 x 64 Bits Single 3.3-V Power Supply

M80-01300XX

Abstract: M8-001 M80-01100XX dil 18 mz M80-1030898S M80-1031098S M80-1031298S
Contextual Info: DRAWING No.: M 80-103X X 98S CD ID O t-1 Cusí SH EET 2 OF 2 | IF n1FormaHon S heel ^Ml IN DOUBT - ASK j c j NOT TO S C A L E J THIRD ANGLE PRO JECTIO N ALL DIMENSIONS IN mm ORDER CODE; (7,55) M80-103XX98S 3,92 J.lü | No. OF CONTACTS — 04, 06, 08, 10, 12, H

rh56d-pci

Abstract: R6789 51 Rockwell V.17 DD536 0.1 uF non polarized capacitor TOYOCOM NC-60 HCF Family KDS 28.224 MHZ crystal 603 6xe kds 97 45
Contextual Info: 5+'3&, +RVW&RQWUROOHG9.IOH[0RGHP 'HYLFH DPLO\IRU'HVNWRS$SSOLFDWLRQV 'HVLJQHU•V*XLGH 3UHOLPLQDU\ ROCKWELL PROPRIETARY INFORMATION. DISSEMINATION OR USE OF THIS INFORMATION IS NOT PERMITTED WITHOUT THE WRITTEN PERMISSION OF ROCKWELL INTERNATIONAL.

Contextual Info: MITSUBISHI LSIs Specifications subject to change without notice. MH4V7245AWXJ -5, -6 HYPER PAGE MODE 301989888 - BIT 4194304 - WORD BY 72 - B IT DYNAMIC RAM DESCRIPTION The MH4V7245AWXJ is 4194304-word x 72-bit dynamic ram module. This consist of four industry standard 4M x

Contextual Info: TOSHIBA THMY7232F0EG-75 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232F0EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: TOSHIBA THMY648071EG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY648071EG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408FT DRAMs and an unbuffer on a printed circuit board.