c 337 25
Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3
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c 337 25sc160dtic 2160 triacv130he150+6general electric scr c220es54494533 gem2n4401 2n3904 2222a1n21es5451
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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M395T5160QZ4-CE66
Abstract: M395T1G60QJ4-CE68 M395T5160QZ4-CE68 M395T5160QZ4-CE65 M395T5663QZ4-CE66 M395T2863QZ4-CE65 M395T5163QZ4-CE68 M395T5663QZ4 M395T5663QZ4-CE65 M395T5160QZ4-CE6
Contextual Info: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb Q-die 60FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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240pin60fbga256mbx41gx72+11m395t1g60qj4m395t5160qz4-ce66m395t1g60qj4-ce68m395t5160qz4-ce68m395t5160qz4-ce65m395t5663qz4-ce66m395t2863qz4-ce65m395t5163qz4-ce68m395t5663qz4m395t5663qz4-ce65m395t5160qz4-ce6
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M395T5160QZ4-CE65
Abstract: M395T5663QZ4-CE65 M395T5663QZ4 sda 5241 M395T5160QZ4-CE68 M395T5663QZ4-CE66 m395t2863qz4-ce68 M395T5160QZ4-CE66 M395T1G60QJ4-CE68 DDR-667
Contextual Info: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb Q-die 60FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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240pin60fbga256mbx41gx72+11m395t1g60qj4m395t5160qz4-ce65m395t5663qz4-ce65m395t5663qz4sda 5241m395t5160qz4-ce68m395t5663qz4-ce66m395t2863qz4-ce68m395t5160qz4-ce66m395t1g60qj4-ce68ddr-667
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SGS-Ates
Abstract: sgs-ates transistors BD698 2SB1146 bd266 Motorola TIP125
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max A V(BR)CEO Of) PD hFE Max ON) Min Max *T 'CBO Max tr Max (Hz) (A) (8) r (CE)sat Max (Ohms) T Oper Max Package Style <°C) Darlington Transistors, PNP (Cont'd) . . . .5 . . . .10 . . 15 .
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sdm3203sdm3201sdm3204sgs125+9tip125tip625mje1090sgs-atessgs-ates transistorsbd6982sb1146bd266motorola tip125
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relay 04501
Abstract: D45D2 b0712 D45D1 D45D5 04501 relay 04503 8712 RESISTOR D45D D45D3
Contextual Info: VERY HIGH GAIN PNP POWER DARLINGTON TRANSISTORS D45D Series -40 - -80 VOLTS -6 AMP, 30 WATTS COMPLEMENTARY TO THE D44D SERIES The General Electric D45D isa Darlington power transistor. It is designed for general purpose switching of m ulti-ampere loads directly from low level logic circuitry. A monolithic bias
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t0-220abrelay 04501d45d2b0712+7d45d1d45d504501 relay045038712 resistord45dd45d3
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M395T5663QZ4
Abstract: M395T2863QZ4-CD59 CI 3060 elsys M395T5160QZ4 CI 4940 M395T5163QZ
Contextual Info: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb Q-die 60FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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240pin60fbga256mbx41gx72+7m395t1g60qj4m395t5663qz4m395t2863qz4-cd59ci 3060 elsysm395t5160qz4ci 4940m395t5163qz
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M395T5160QZ4-CE65
Contextual Info: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb Q-die 60FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL
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240pin60fbga256mbx41gx72+2m395t1g60qj4m395t5160qz4-ce65
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relay 04501
Abstract: 04501 relay
Contextual Info: HARRIS SEMICOND SECTOR SbE d m 4302271 0040327 4T0 « H A S D 45D S e rie s Rie Number 2353 - ^ 6-Ampere P-N-P Darlington Power Transistors 3 7 - 2 e? TERMINAL DESIGNATIONS Complementary to the D44D Series -40, -60, and -8 0 Volts, 30 Watts Gain of 2000 at -1 A
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9zcs-39969o-220abd45d-seriesd45d5+4125ecd45d2relay 0450104501 relay
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D45D1
Abstract: ic 2407 g D45D5 D4505
Contextual Info: File N um ber 2353 045D Series 6-Ampere P-N-P Darlington Power Transistors TERMINAL DESIGNATIONS Com plementary to the D 44D Series -40, -60, and -8 0 Volts, 30 Watts Gain of 2000 at -1 A Features: 9 2C S-39969 • Operates fro m 1C w ith o u t p re d riv e r
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s-39969o-220abd45d-seriesd45d2+4d45d1ic 2407 gd45d5d4505
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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