D3S 50 Search Results

d3s 05 diode

Contextual Info: Philips Semiconductors bbS3T31 002570A D3S * A P X Dual rectifiers - SMD version Ultra fast recovery N AHER PHILIPS/DISCRETE GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency monolithic dual rectifiers in SOT223 plastic envelope suitable for surface mounting,

D3S 50

Abstract: OA61 AEG Diode
Contextual Info: A E G CORP 17E D 005145b 000*1335 3 Kleindioden Lower power diodes Diodes de faible puissance Typ Type V rrm V D 1,5/ A IS A /°C 400 800 50 100 400 200 800 55 200 600 400 160 800 150 800 1000 110 1200 ¡50 D3/ D6/ trr 200 600 1000 D2S D3S •favm Ifsm t=>10m* tal

Sharp IIS

Abstract: C31A SHARP ORDERING INFORMATION
Contextual Info: SHARP b lE CORP LH5P8512 FEATURES • 524,288 x 8 bit organization • Access time: 60/70/80 ns MAX. • Cycle time: 110/130/150 ns (MIN.) • Power supply: D • ûlfiOTSfi GG G T b 5 5 D3S H S R P J PRELIMINARY CMOS 4M (512K x 8) Pseudo-Static RAM •

Contextual Info: = = = 5 HE D " • cì 5 3 c]bcì 0 DG01SM7 D3S ■ ÜJAF WS57C71C ÜIAFER SCALE INTEGRATION HIGH SPEED 32K x 8 CMOS PROM/RPROM K E Y FEATURES • Ultra-Fast Access Time • Immune to Latch-UP — 35 ns — Up to 200 mA • Low Power Consumption • Fast Programming

Contextual Info: I □ï SUPERTEX INC DE § 07732^5 □□□1731 1 | 8773295 SU PERTEX INC 0 1E 01731 D VP11A Supertex inc. T -3Ï-I? /1g \ P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information O rder N um ber / Package b v D3S/ ^DS ON ^D(ON) bvms (max)

Contextual Info: aixYS H igh V o lta g e M O SFET IX TU 01 N 80 v D3S IX TU 01 N 100 lD25 =800/1000 V = 100 mA ^ D S o n = 80 f ì N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 VDSS Tj = 25°C to 150°C 800 1000 V VpOR

BLX94C

Abstract: BLX94A BLX94
Contextual Info: L^E » N AMER PHILIPS/DISCRETE • bfc.53T31 D021b3E IAPX D3S BLX94A BLX94C J BLX94A IS MAINTENANCE TYPE U.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors suitable fo r transmitting applications in class-A, B or C in the u.h.f. range fo r a nominal supply voltage up to 28 V . The transistors are resistance stabilized and tested

d3s diode

Abstract: d3s 57 diode 6562s DIODE d3s d3s schottky d3s 05 diode DIODE d3s 57 D3S6
Contextual Info: 5 /a s /h *- AUT' S H 'Í Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D3S6M Package I AX14 60V 3A CD 1 •Tjl50°C • P rrsm 26.5±2 I7 ffiiE U> t w Í7+0.5 7-0 26.5±2 W °@ • 1.40 U - K m D3S 1D • S R S ÎÜ •D C /D C n y j K — P •W M , tf- h s

d3s diode

Abstract: d3s4m diode DIODE d3s
Contextual Info: 5 / a s / h * - A U T ' S H ' Í Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D S 3 Package I AX14 M 4 40V 3A CD •T jl5 0 °C • P r r s m I 7 • IÍ7+0.5 26.5±2 f f iiE t w 7-0 U > W 26.5±2 °@ 1 .4 0 U - K m D3S 51 • S R S ÎÜ ffi'E Polarity

"digital to synchro"

Abstract: digital to synchro converter DSL416 DSL412 DSL410 DSL60-H-1 Scans-001802 synchro to digital converter 11 bits synchro computer conversions
Contextual Info: COMPUTER CONVERSIONS CORP f • C o m p u te r KBo n v e r s o n s C o r p o r a t io n EAST NO RTHPORT, N.Y. 11731 516 261-3300 • TWX 510-226-0448 SIE D ■! 2310Ö0D □ □□□Mbcì D3S H C C O LOW PROFILE DIGITAL TO SYNCHRO CONVERTER DSL SERIES W Ih I IIIh W

"digital to synchro"

Abstract: digital to synchro converter DSL60-H-1 DSL40 DSL410 DSL416 DSL412 synchro to digital converter 11 bits DSL40-LorH-1
Contextual Info: COMPUTER CONVERSIONS CORP f • C o m p u te r KBo n v e r s o n s C o r p o r a t io n EAST NO RTHPORT, N.Y. 11731 516 261-3300 • TWX 510-226-0448 SIE D ■! 2310Ö0D □ □□□Mbcì D3S H C C O LOW PROFILE DIGITAL TO SYNCHRO CONVERTER DSL SERIES W Ih I IIIh W

2SK941

Abstract: transistor 2SK941 za sot89 d3s diode
Contextual Info: T O S H IB A 2SK941 TGTTSSD 0Q2327cì D3S T O S H IB A FIELD EFFECT T R A N S IS T O R SILIC O N N C H A N N E L M O S T Y P E L2-jt - M O S III 2SK941 H IGH S P E E D S W IT C H IN G A P P L IC A T IO N S . R E L A Y D R IV E, M O T O R D R IV E A N D DC-DC C O N V E R T E R A P P L IC A T IO N S .

D2S 56

Abstract: OA61 S1600 sj51
Contextual Info: A E G- AK TI ENGE S EL L S C H A F T 17E » 002^15 GGDTBBS 7 M A E Û G Kleindioden Lower power diodes Diodes de faible puissance Typ Type V rrm If a v m •f s m trr tvjmax Maßbild G t=10mt tal te V A/°C A US °C g 200 600 1000 400 800 50 1.5 /100 - 175

HD63265

Abstract: 5.25 floppy interface HD63265P HD63265FP FLOPPY DISK Clk16MHZ
Contextual Info: H D63265 -Floppy Disk Controller FDC HD63265 is a floppy disk controller (FDC) VLSI cir­ cuit which is capable of controlling u p to 3.5", 5.25", or 8" floppy disk drives receiving com m ands from a microprocessor in a 68 or 80-series m icrocom puter

HD63265P

Abstract: HD63265 765 fdc HD63265FP d2s 28 diode d3s diode 41ES ABE 802 PVDX FDD service
Contextual Info: H D63265-F lo p p y D isk C o n tro lle r FD C HD63265 is a floppy disk controller (FDC) VLSI cir­ cuit w hich is capable of controlling up to 3.5", 5.25", or 8" floppy disk drives receiving com m ands from a m icroprocessor in a 68 or 80-series microcomputer

SEGA

Abstract: 100PF NJU6415 SEG40
Contextual Info: NJU6415 Y .y h V h IJ y ? X L C D 151- •m s NJU6415 l ì , -tzi’V K ' y h v h U i ^ i S â i S i y ' J T A A A , > h K 7 - f A 'T , fi 80 H r f * Î È * f f l K 7 -î/n*t L T S i â T - f o r t S R 80 tC "j Y =7-y^-t 4 U ^ J L - K 7 - 1 ' ^ \ ' * ' i b * S $ n T l ' i ' r o

d3s 58

Abstract: D3S 50
Contextual Info: Bi - Directional trigger - DIACS. T h e plastic m aterial carries U /L recognition 94 V-O. ELECTRICAL CHARACTERISTICS Tc B erak o v er V oltage = 25 °C B erakover V oltage Dynam ic B reakover Peak Pulse Symm etry B reakback C u rren t C urrent for lOjus

D3S 50

Abstract: d3s 15
Contextual Info: Low power diodes Rectifier diodes Type V rrm O u tlin e If a v m t Ir A A MS °c 160 3 - 150 97 100 6 150 98 V br If s m tv j r'lax O u tlin e If s m 1= tv, m ax 10 ms tv. = tv, max V 200 • 03/ 800 06/ 1200 1400 1600 Controlled avalanche diodes Type V rrm

BYY 56

Abstract: byy 57 1200 OA61 BYY57 BYS 98-50 byy57e BYy5758
Contextual Info: Low Power Diodes Rectifier diodes V rrm V Ifsm Ifavm trr outline A 10 ms, A °c /w lo Type 100 6 - 150 151 V br A 1 0 ms, Ifsm Ifavm tvj max outline A A °C C a th o r iA tv, ~ tvj max D 6/ 1200. 1600 151 Controlled avalanche diodes T ype VrrM V tA = 4 5 °C

D3S 50

Abstract: D3S 57
Contextual Info: VG/CA-B Connector Dim ensions Wall Mounting Receptacle CA3100E-B-08 Flange with threaded holes CA3100E-B-09 (Flange with through holes) CA3100E-B-08, -09 designates a wall mounting receptacle, with 90° endbell, cable clam p and telescoping bushing. Modifications see page 10

D3S 59

Contextual Info: O a 2SD1383K / T ransistors b~7 U I O o O I V *-y > h > # * Epitaxial Planar NPN Silicon Transistor (Darlington) il/H ig h Gain Amp. • ¥ i% 1) • • Dimensions (Unit : mm) ? - ' ) > h > S » T lh F E 7 A 5 . h F E = 5 0 000 (Typ.) (at 100mA) i . i -S:?

DCM21-PC

Abstract: 600C CSA-22 TTC-108 FL040 microtran 6000CT
Contextual Info: REV. S ta tu e ISSUE 2 REVISED AND REDRAWN ON CAD/CAM 0 1 /0 0 /9 2 HA ISSUE 3 TEMECULA WAS CARSON 0 1 /2 8 /9 3 TS ISSUE 4 ADDCD DCM21—PC MICROTRAN AND SAFETY 0 1 /2 0 /9 6 TS TELECOMMUNICATION DRY COUPLING TRANSFORMER DESIGNED TO OPERATE AT A MAX LEVEL OF +7dBm AND TO REFLECT A PRIMARY SOURCE IMPEDANCE OF APPROXIMATELY

Contextual Info: AVG Semiconductors DDiT Technical Data « o DV74LS30 DV74ALS30A 8-lnput NAND Gate This device contains a single gate, which performs the logic NAND function. N Suffix Plastic DIP AVG-001 Case • AVG’s LS operates over extended Vcc from 4.5 to 5.5 V • AVG’s LS and ALS both have guaranteed DC and AC

Contextual Info: 2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching HITACHI Features • Low on-resistance RDS „n, = 0. m typ. (Vos = 4 V, ID = 1(M mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK *2 1. Source 2. Gate 3. Drain 990 ADE-208-574