D3S 50 Search Results

d3s 05 diode

Contextual Info: Philips Semiconductors bbS3T31 002570A D3S * A P X Dual rectifiers - SMD version Ultra fast recovery N AHER PHILIPS/DISCRETE GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency monolithic dual rectifiers in SOT223 plastic envelope suitable for surface mounting,

Contextual Info: = = = 5 HE D " • cì 5 3 c]bcì 0 DG01SM7 D3S ■ ÜJAF WS57C71C ÜIAFER SCALE INTEGRATION HIGH SPEED 32K x 8 CMOS PROM/RPROM K E Y FEATURES • Ultra-Fast Access Time • Immune to Latch-UP — 35 ns — Up to 200 mA • Low Power Consumption • Fast Programming

Contextual Info: I □ï SUPERTEX INC DE § 07732^5 □□□1731 1 | 8773295 SU PERTEX INC 0 1E 01731 D VP11A Supertex inc. T -3Ï-I? /1g \ P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information O rder N um ber / Package b v D3S/ ^DS ON ^D(ON) bvms (max)

d3s diode

Abstract: d3s4m diode DIODE d3s
Contextual Info: 5 / a s / h * - A U T ' S H ' Í Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D S 3 Package I AX14 M 4 40V 3A CD •T jl5 0 °C • P r r s m I 7 • IÍ7+0.5 26.5±2 f f iiE t w 7-0 U > W 26.5±2 °@ 1 .4 0 U - K m D3S 51 • S R S ÎÜ ffi'E Polarity

"digital to synchro"

Abstract: digital to synchro converter DSL416 DSL412 DSL410 DSL60-H-1 Scans-001802 synchro to digital converter 11 bits synchro computer conversions
Contextual Info: COMPUTER CONVERSIONS CORP f • C o m p u te r KBo n v e r s o n s C o r p o r a t io n EAST NO RTHPORT, N.Y. 11731 516 261-3300 • TWX 510-226-0448 SIE D ■! 2310Ö0D □ □□□Mbcì D3S H C C O LOW PROFILE DIGITAL TO SYNCHRO CONVERTER DSL SERIES W Ih I IIIh W

"digital to synchro"

Abstract: digital to synchro converter DSL60-H-1 DSL40 DSL410 DSL416 DSL412 synchro to digital converter 11 bits DSL40-LorH-1
Contextual Info: COMPUTER CONVERSIONS CORP f • C o m p u te r KBo n v e r s o n s C o r p o r a t io n EAST NO RTHPORT, N.Y. 11731 516 261-3300 • TWX 510-226-0448 SIE D ■! 2310Ö0D □ □□□Mbcì D3S H C C O LOW PROFILE DIGITAL TO SYNCHRO CONVERTER DSL SERIES W Ih I IIIh W

D2S 56

Abstract: OA61 S1600 sj51
Contextual Info: A E G- AK TI ENGE S EL L S C H A F T 17E » 002^15 GGDTBBS 7 M A E Û G Kleindioden Lower power diodes Diodes de faible puissance Typ Type V rrm If a v m •f s m trr tvjmax Maßbild G t=10mt tal te V A/°C A US °C g 200 600 1000 400 800 50 1.5 /100 - 175

HD63265

Abstract: 5.25 floppy interface HD63265P HD63265FP FLOPPY DISK Clk16MHZ
Contextual Info: H D63265 -Floppy Disk Controller FDC HD63265 is a floppy disk controller (FDC) VLSI cir­ cuit which is capable of controlling u p to 3.5", 5.25", or 8" floppy disk drives receiving com m ands from a microprocessor in a 68 or 80-series m icrocom puter

NJU6511

Abstract: JUG-51 HJU6501 HJU6511 HJU651IB JUB501 JUG511 KJU6511XC NJU6511D v3160
Contextual Info: v4, D Vi­ li O < < < < < < < < < • íi t -i i r S ü o d s j a % 0 \ T A O 'S mis.fi y mti t & æ ü & t s mizi s h * ¿ > . \ h » t * IÍ»S0IAI-0* mí» diHo/doi • • EE <1 I t ^ A » £ a - V ¡5¡¡f M » M i Ii 8 V- ^ Hl ¡ffi • * vi • I

HD63265P

Abstract: HD63265 765 fdc HD63265FP d2s 28 diode d3s diode 41ES ABE 802 PVDX FDD service
Contextual Info: H D63265-F lo p p y D isk C o n tro lle r FD C HD63265 is a floppy disk controller (FDC) VLSI cir­ cuit w hich is capable of controlling up to 3.5", 5.25", or 8" floppy disk drives receiving com m ands from a m icroprocessor in a 68 or 80-series microcomputer

SEGA

Abstract: 100PF NJU6415 SEG40
Contextual Info: NJU6415 Y .y h V h IJ y ? X L C D 151- •m s NJU6415 l ì , -tzi’V K ' y h v h U i ^ i S â i S i y ' J T A A A , > h K 7 - f A 'T , fi 80 H r f * Î È * f f l K 7 -î/n*t L T S i â T - f o r t S R 80 tC "j Y =7-y^-t 4 U ^ J L - K 7 - 1 ' ^ \ ' * ' i b * S $ n T l ' i ' r o

d3s 58

Abstract: D3S 50
Contextual Info: Bi - Directional trigger - DIACS. T h e plastic m aterial carries U /L recognition 94 V-O. ELECTRICAL CHARACTERISTICS Tc B erak o v er V oltage = 25 °C B erakover V oltage Dynam ic B reakover Peak Pulse Symm etry B reakback C u rren t C urrent for lOjus

D3S 50

Abstract: D3S 57
Contextual Info: VG/CA-B Connector Dim ensions Wall Mounting Receptacle CA3100E-B-08 Flange with threaded holes CA3100E-B-09 (Flange with through holes) CA3100E-B-08, -09 designates a wall mounting receptacle, with 90° endbell, cable clam p and telescoping bushing. Modifications see page 10

DCM21-PC

Abstract: 600C CSA-22 TTC-108 FL040 microtran 6000CT
Contextual Info: REV. S ta tu e ISSUE 2 REVISED AND REDRAWN ON CAD/CAM 0 1 /0 0 /9 2 HA ISSUE 3 TEMECULA WAS CARSON 0 1 /2 8 /9 3 TS ISSUE 4 ADDCD DCM21—PC MICROTRAN AND SAFETY 0 1 /2 0 /9 6 TS TELECOMMUNICATION DRY COUPLING TRANSFORMER DESIGNED TO OPERATE AT A MAX LEVEL OF +7dBm AND TO REFLECT A PRIMARY SOURCE IMPEDANCE OF APPROXIMATELY

Contextual Info: Schottky Barrier Diode Axial Diode mtm D3S4M O U T L IN E U n it ! m m Package I AX14 W e igh t 1 .0 6 g T yp 40V 3A * Feature 7 26.5 • Tj=150°C • P r r s m Rating • T j=150T C • PRRSM ^y^ VÍ/X<SÍ¡E • D C /D C 3 • ÍÜ 5 1 . y - A . O A t l f s

T0220F

Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
Contextual Info: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)

diode d3s6m

Abstract: 251C
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE Package I AX14 D3S6M U nit : m m W eight 1.06g Typ 60V 3A @ T Feature Z I 26.5 • T j= 1 5 C fC • Tj=150°C • P rrsm P K ^ V î/x (S ü E • P r r s m Rating 26.5 M Main Use * g m m iH N H M arking • Switching Regulator

2SK1217

Abstract: 2SK962 2SK1512 MOSFET Modules 2SK1008-01 2SK1010-01 2SK1012-01 2SK1082 2SK1511 2SK1171
Contextual Info: COLLHER SEMICONDUCTOR INC 22307^2 ODGISTT OTT « C O L MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)

2SK1082

Abstract: T0220F 2SK1512 T0-220F 2SK1018-01 2SK1084 2SK1388 2SK1217 2SK1090 2SK1276
Contextual Info: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss 0 0 900 900 900 900 1000 C h aracteristics (Tc=25°C)

2SB1172

Abstract: 2SB1172A 2SD1742 2SD1742A
Contextual Info: 2SD1742, 2sdi742a P o w er T ra n s ls to rs m b^3stss nolb831 1T, m 2SD 1742, 2SD 1742A Silicon PNP Triple-Diffused Planar Type Package Dim ensions AF Pow er Am plifier C om plem entary Pair with 2 S B 1 1 7 2 , 2 S B 1 1 7 2 A Unit ‘ mm • Features 3.7max

d3s marking

Abstract: d3s diode DIODE marking S6 89
Contextual Info: Schottky Barrier Diode Axial Diode Wtm OUTLINE P ack ag e : AX14 D3S4M 40V 3A 0 Feature • Tj=150°C • Tj=150°C • P r r s m T ’A ' ^ V ì ' I ' K ì E • P rrsm Rating DC/DC n y j t - l ? • m m 26.5 26.5 iT > Main Use • * JS fM M B S H Marking

Contextual Info: International IO R Rectifier • • • • • PD - 9.1435B PRELIMINARY IRF7311 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Vdss = 20 V ^DS on = 0.029Î2 Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier

d3s diode

Abstract: EIGHT n-channel MOSFET ARRAY AN0140ND
Contextual Info: AN01 in c . 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ Order Number / Package * ' If BV qss/ BV dgs min RDS(ON) (max) 160V 350Ü 200V 300Ì2 300V 300CÌ 25mA 320V 350£2 25mA 400V 350£2

DIODE D3S 90

Abstract: BC 247 sot-23 d2s diode DIODE d3s TRAY DIMENSIONS SOIC16 tape & reel d3s diode
Contextual Info: Discrete Surface Mount Prefixes Suffixes Pkg dim D-PAK TO-252-2L RHRD RURD S S D2S Dim D-PAK (TO-252-3L) IRFR RFD RLD FDD MOSFET Bipolar Diode JFETs IGBT Pkg method Qty (pcs) Reel dia Tape width (inch) (mm) Tape & Reel 2.5K 13 16 X Tape & Reel 2.5K 13 16