D3S 15 Search Results

d3s 05 diode

Contextual Info: Philips Semiconductors bbS3T31 002570A D3S * A P X Dual rectifiers - SMD version Ultra fast recovery N AHER PHILIPS/DISCRETE GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency monolithic dual rectifiers in SOT223 plastic envelope suitable for surface mounting,

Contextual Info: LVQ02 fciME ]> bSüllEE DG7b374 D3S « N S C l Semiconductor 54LVQ/74LVQ02 Low Voltage Quad 2-Input NOR Gate General Description Features The ’LVQ02 contains four, 2-input NOR gates. • Ideal for low power/low noise 3.3V applications ■ Guaranteed simultaneous switching noise level and

Sharp IIS

Abstract: C31A SHARP ORDERING INFORMATION
Contextual Info: SHARP b lE CORP LH5P8512 FEATURES • 524,288 x 8 bit organization • Access time: 60/70/80 ns MAX. • Cycle time: 110/130/150 ns (MIN.) • Power supply: D • ûlfiOTSfi GG G T b 5 5 D3S H S R P J PRELIMINARY CMOS 4M (512K x 8) Pseudo-Static RAM •

Contextual Info: aixYS H igh V o lta g e M O SFET IX TU 01 N 80 v D3S IX TU 01 N 100 lD25 =800/1000 V = 100 mA ^ D S o n = 80 f ì N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 VDSS Tj = 25°C to 150°C 800 1000 V VpOR

D3S 50

Abstract: OA61 AEG Diode
Contextual Info: A E G CORP 17E D 005145b 000*1335 3 Kleindioden Lower power diodes Diodes de faible puissance Typ Type V rrm V D 1,5/ A IS A /°C 400 800 50 100 400 200 800 55 200 600 400 160 800 150 800 1000 110 1200 ¡50 D3/ D6/ trr 200 600 1000 D2S D3S •favm Ifsm t=>10m* tal

Contextual Info: = = = 5 HE D " • cì 5 3 c]bcì 0 DG01SM7 D3S ■ ÜJAF WS57C71C ÜIAFER SCALE INTEGRATION HIGH SPEED 32K x 8 CMOS PROM/RPROM K E Y FEATURES • Ultra-Fast Access Time • Immune to Latch-UP — 35 ns — Up to 200 mA • Low Power Consumption • Fast Programming

75w 50

Abstract: VP1106N1 VP1106N2 VP1106N5 VP1106ND VP1110N1 VP1110N2 VP1110N5 VP1110ND VP11A
Contextual Info: I □ï SUPERTEX INC DE § 07732^5 □□□1731 1 | 8773295 SU PE RT EX INC 01E 01731 D VP11A Supertex inc. T -3Ï-I? /1g\ P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information O rd e r N um b e r / P ackage b v D3S/ ^DS ON ^D(ON) bvms

Contextual Info: I □ï SUPERTEX INC DE § 07732^5 □□□1731 1 | 8773295 SU PERTEX INC 0 1E 01731 D VP11A Supertex inc. T -3Ï-I? /1g \ P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information O rder N um ber / Package b v D3S/ ^DS ON ^D(ON) bvms (max)

BLX94C

Abstract: BLX94A BLX94
Contextual Info: L^E » N AMER PHILIPS/DISCRETE • bfc.53T31 D021b3E IAPX D3S BLX94A BLX94C J BLX94A IS MAINTENANCE TYPE U.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors suitable fo r transmitting applications in class-A, B or C in the u.h.f. range fo r a nominal supply voltage up to 28 V . The transistors are resistance stabilized and tested

d3s diode

Contextual Info: 2SK1906 LD L o w D rive S eries V D3S= 1 0 0 V 2063 N Channel Power M OSFET F e a tu re s • Low ON resistance. - Very high-speed switching. •Low-voltage drive. ■M icaless package facilitating mounting. A b s o lu te M ax im u m R a tin g s a t Ta = 25°C

d3s diode

Abstract: DIODE d3s 2092A
Contextual Info: 2SK1471 LD L o w D rive S eries V D3s = 6 0 V 2083 A2092A N Channel Power M OSFET E 3772A F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage

m 43171

Abstract: 2sj307 43171
Contextual Info: 2SJ307 AP A d v a n c e d P e rfo rm a n c e Series V D3S= 2 5 0 V 2063 P Channel Power M OSFET £ 4 3 17 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Micaless package facilitating mounting. A bsolute M axim um R atings at Ta = 25°C

d3s diode

Abstract: d3s 57 diode 6562s DIODE d3s d3s schottky d3s 05 diode DIODE d3s 57 D3S6
Contextual Info: 5 /a s /h *- AUT' S H 'Í Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D3S6M Package I AX14 60V 3A CD 1 •Tjl50°C • P rrsm 26.5±2 I7 ffiiE U> t w Í7+0.5 7-0 26.5±2 W °@ • 1.40 U - K m D3S 1D • S R S ÎÜ •D C /D C n y j K — P •W M , tf- h s

d3s diode

Abstract: d3s4m diode DIODE d3s
Contextual Info: 5 / a s / h * - A U T ' S H ' Í Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D S 3 Package I AX14 M 4 40V 3A CD •T jl5 0 °C • P r r s m I 7 • IÍ7+0.5 26.5±2 f f iiE t w 7-0 U > W 26.5±2 °@ 1 .4 0 U - K m D3S 51 • S R S ÎÜ ffi'E Polarity

"digital to synchro"

Abstract: digital to synchro converter DSL60-H-1 DSL40 DSL410 DSL416 DSL412 synchro to digital converter 11 bits DSL40-LorH-1
Contextual Info: COMPUTER CONVERSIONS CORP f • C o m p u te r KBo n v e r s o n s C o r p o r a t io n EAST NO RTHPORT, N.Y. 11731 516 261-3300 • TWX 510-226-0448 SIE D ■! 2310Ö0D □ □□□Mbcì D3S H C C O LOW PROFILE DIGITAL TO SYNCHRO CONVERTER DSL SERIES W Ih I IIIh W

2SK941

Abstract: transistor 2SK941 za sot89 d3s diode
Contextual Info: T O S H IB A 2SK941 TGTTSSD 0Q2327cì D3S T O S H IB A FIELD EFFECT T R A N S IS T O R SILIC O N N C H A N N E L M O S T Y P E L2-jt - M O S III 2SK941 H IGH S P E E D S W IT C H IN G A P P L IC A T IO N S . R E L A Y D R IV E, M O T O R D R IV E A N D DC-DC C O N V E R T E R A P P L IC A T IO N S .

2SK941

Abstract: transistor 2SK941
Contextual Info: TO S H IB A 2SK941 T G T T S S D 0 Q 2 3 2 7 cì D3S T O S H IB A FIELD EFFECT T R A N S IS T O R SILIC O N N C H A N N E L M O S T Y P E L2-jt - M O S III 2SK941 H IGH S P E E D S W IT C H IN G A P P L IC A T IO N S . R E L A Y D R IV E, M O T O R D R IV E A N D DC-DC C O N V E R T E R A P P L IC A T IO N S .

HUF75307D

Contextual Info: Harris New Low rDS ON MOSFET Products UltraFETTM is a new low voltage, low rDS(ON) MOSFET design and process technology. The UltraFETTM technology provides Harris with world class power MOSFET product performance in several package styles. The UltraFET TM technology

d3s diode

Abstract: DIODE D3S 90 DIODE d3s D3S 50 D3SB10 D3SB10 20 Diode B60 d3s 04 diode d3s 15 D3SB80
Contextual Info: High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique

d3s diode

Abstract: d3s schottky Ic d3s DIODE D3S 90
Contextual Info: Audio B an d w id th Designs 20W - 400W M ultimedia, Autom otive, Home Theater m/^ Half Bridge and Full Bridge Features: 20Hz - 22kHz Bandwidth >90% Efficiency ^ ^ <0.05% THD >95db SNR FCC Class-B/CE Com pliant COMING SOON A Full Portfolio of Audio Components for Audio Switching Pow er Supplies

SEGA

Abstract: 100PF NJU6415 SEG40
Contextual Info: NJU6415 Y .y h V h IJ y ? X L C D 151- •m s NJU6415 l ì , -tzi’V K ' y h v h U i ^ i S â i S i y ' J T A A A , > h K 7 - f A 'T , fi 80 H r f * Î È * f f l K 7 -î/n*t L T S i â T - f o r t S R 80 tC "j Y =7-y^-t 4 U ^ J L - K 7 - 1 ' ^ \ ' * ' i b * S $ n T l ' i ' r o

D3S 50

Abstract: d3s 15
Contextual Info: Low power diodes Rectifier diodes Type V rrm O u tlin e If a v m t Ir A A MS °c 160 3 - 150 97 100 6 150 98 V br If s m tv j r'lax O u tlin e If s m 1= tv, m ax 10 ms tv. = tv, max V 200 • 03/ 800 06/ 1200 1400 1600 Controlled avalanche diodes Type V rrm

D2S 56

Abstract: OA61 S1600 sj51
Contextual Info: A E G- AK TI ENGE S EL L S C H A F T 17E » 002^15 GGDTBBS 7 M A E Û G Kleindioden Lower power diodes Diodes de faible puissance Typ Type V rrm If a v m •f s m trr tvjmax Maßbild G t=10mt tal te V A/°C A US °C g 200 600 1000 400 800 50 1.5 /100 - 175

BYY 56

Abstract: byy 57 1200 OA61 BYY57 BYS 98-50 byy57e BYy5758
Contextual Info: Low Power Diodes Rectifier diodes V rrm V Ifsm Ifavm trr outline A 10 ms, A °c /w lo Type 100 6 - 150 151 V br A 1 0 ms, Ifsm Ifavm tvj max outline A A °C C a th o r iA tv, ~ tvj max D 6/ 1200. 1600 151 Controlled avalanche diodes T ype VrrM V tA = 4 5 °C