D3S 15 Search Results

d3s 05 diode

Contextual Info: Philips Semiconductors bbS3T31 002570A D3S * A P X Dual rectifiers - SMD version Ultra fast recovery N AHER PHILIPS/DISCRETE GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency monolithic dual rectifiers in SOT223 plastic envelope suitable for surface mounting,

Contextual Info: = = = 5 HE D " • cì 5 3 c]bcì 0 DG01SM7 D3S ■ ÜJAF WS57C71C ÜIAFER SCALE INTEGRATION HIGH SPEED 32K x 8 CMOS PROM/RPROM K E Y FEATURES • Ultra-Fast Access Time • Immune to Latch-UP — 35 ns — Up to 200 mA • Low Power Consumption • Fast Programming

Contextual Info: I □ï SUPERTEX INC DE § 07732^5 □□□1731 1 | 8773295 SU PERTEX INC 0 1E 01731 D VP11A Supertex inc. T -3Ï-I? /1g \ P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information O rder N um ber / Package b v D3S/ ^DS ON ^D(ON) bvms (max)

d3s diode

Contextual Info: 2SK1906 LD L o w D rive S eries V D3S= 1 0 0 V 2063 N Channel Power M OSFET F e a tu re s • Low ON resistance. - Very high-speed switching. •Low-voltage drive. ■M icaless package facilitating mounting. A b s o lu te M ax im u m R a tin g s a t Ta = 25°C

d3s diode

Abstract: DIODE d3s 2092A
Contextual Info: 2SK1471 LD L o w D rive S eries V D3s = 6 0 V 2083 A2092A N Channel Power M OSFET E 3772A F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage

m 43171

Abstract: 2sj307 43171
Contextual Info: 2SJ307 AP A d v a n c e d P e rfo rm a n c e Series V D3S= 2 5 0 V 2063 P Channel Power M OSFET £ 4 3 17 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Micaless package facilitating mounting. A bsolute M axim um R atings at Ta = 25°C

d3s diode

Abstract: d3s4m diode DIODE d3s
Contextual Info: 5 / a s / h * - A U T ' S H ' Í Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D S 3 Package I AX14 M 4 40V 3A CD •T jl5 0 °C • P r r s m I 7 • IÍ7+0.5 26.5±2 f f iiE t w 7-0 U > W 26.5±2 °@ 1 .4 0 U - K m D3S 51 • S R S ÎÜ ffi'E Polarity

"digital to synchro"

Abstract: digital to synchro converter DSL416 DSL412 DSL410 DSL60-H-1 Scans-001802 synchro to digital converter 11 bits synchro computer conversions
Contextual Info: COMPUTER CONVERSIONS CORP f • C o m p u te r KBo n v e r s o n s C o r p o r a t io n EAST NO RTHPORT, N.Y. 11731 516 261-3300 • TWX 510-226-0448 SIE D ■! 2310Ö0D □ □□□Mbcì D3S H C C O LOW PROFILE DIGITAL TO SYNCHRO CONVERTER DSL SERIES W Ih I IIIh W

Contextual Info: Schottky Barrier Diode Axial Diode mtm D3S4M O U T L IN E U n it ! m m Package I AX14 W e igh t 1 .0 6 g T yp 40V 3A * Feature 7 26.5 • Tj=150°C • P r r s m Rating • T j=150T C • PRRSM ^y^ VÍ/X<SÍ¡E • D C /D C 3 • ÍÜ 5 1 . y - A . O A t l f s

HD63265

Abstract: 5.25 floppy interface HD63265P HD63265FP FLOPPY DISK Clk16MHZ
Contextual Info: H D63265 -Floppy Disk Controller FDC HD63265 is a floppy disk controller (FDC) VLSI cir­ cuit which is capable of controlling u p to 3.5", 5.25", or 8" floppy disk drives receiving com m ands from a microprocessor in a 68 or 80-series m icrocom puter

diode d3s6m

Abstract: 251C
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE Package I AX14 D3S6M U nit : m m W eight 1.06g Typ 60V 3A @ T Feature Z I 26.5 • T j= 1 5 C fC • Tj=150°C • P rrsm P K ^ V î/x (S ü E • P r r s m Rating 26.5 M Main Use * g m m iH N H M arking • Switching Regulator

0-10V

Contextual Info: 1. M echanical Dim ensions: 2. Sch em atic: -o 5 1 o- 0.480 Max ñ ñ ñ ñ 3 o- XFMRS X o XF0043 mo o -A D 3 S 4 o- -o 8 D YYWW ü ü ü ü D 0.098 3. E lectrical Specification s: 25°C |— 0.026x0.013 0_0J_L OCL: Pins 1 -4 4 .0 m H ± 5 % @1KHz, 0.10V OAdc

D3S 50

Abstract: D3S 57
Contextual Info: VG/CA-B Connector Dim ensions Wall Mounting Receptacle CA3100E-B-08 Flange with threaded holes CA3100E-B-09 (Flange with through holes) CA3100E-B-08, -09 designates a wall mounting receptacle, with 90° endbell, cable clam p and telescoping bushing. Modifications see page 10

Contextual Info: SAN YO S E M I C O N D U C T O R CORP 53E D T ' n T O T b 000*1505 553 « T S A J 1-74 - O f - o i i O rd e rin g n u m b e r: EN 4 0 8 7 A Monolithic Linear IC LA4598 NO.4087A i S A \Y O Two-channel Power Amplifier for Radio-cassette Players PINOUT OVERVIEW

Contextual Info: r Z J SGS-THOMSON *7W » TSH151 RfflO g[S ilL[i©TO M©i WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 200V4is VERY FAST SETTLING TIME : 70ns (0.1% VERY HIGH INPUT IMPEDANCE

2D 1002 diode

Abstract: d3s marking DIODE D3S 90 MARKING tAN SOT-23 diode MARKING tAN SOT-23
Contextual Info: PD - 9 .1508C International IOR Rectifier IR L M S 1 5 0 3 HEXFET Power MOSFET • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • N-Channel MOSFET V dss = 3 0 V RDS(on) = 0 .1 0 Î2 Description Fifth Generation H EXFETsfrom International Rectifier

2SK1217

Abstract: 2SK962 2SK1512 MOSFET Modules 2SK1008-01 2SK1010-01 2SK1012-01 2SK1082 2SK1511 2SK1171
Contextual Info: COLLHER SEMICONDUCTOR INC 22307^2 ODGISTT OTT « C O L MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)

2SK1082

Abstract: T0220F 2SK1512 T0-220F 2SK1018-01 2SK1084 2SK1388 2SK1217 2SK1090 2SK1276
Contextual Info: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss 0 0 900 900 900 900 1000 C h aracteristics (Tc=25°C)

2SB1172

Abstract: 2SB1172A 2SD1742 2SD1742A
Contextual Info: 2SD1742, 2sdi742a P o w er T ra n s ls to rs m b^3stss nolb831 1T, m 2SD 1742, 2SD 1742A Silicon PNP Triple-Diffused Planar Type Package Dim ensions AF Pow er Am plifier C om plem entary Pair with 2 S B 1 1 7 2 , 2 S B 1 1 7 2 A Unit ‘ mm • Features 3.7max

d3s diode

Abstract: EIGHT n-channel MOSFET ARRAY AN0140ND
Contextual Info: AN01 in c . 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ Order Number / Package * ' If BV qss/ BV dgs min RDS(ON) (max) 160V 350Ü 200V 300Ì2 300V 300CÌ 25mA 320V 350£2 25mA 400V 350£2

d3s diode

Abstract: 2SK534
Contextual Info: ~73 HITACHI/-COPTOELECTRONICS} — ^ ^ § 7 D =5 =FíTT 7íC l:r3 r7 X Q P T U E U F C T K 0 ÍT rü 3 T d E J 4 4 clti50 S O D I O C H S 73C 1 0 0 9 2 D T - 37 -/3 2SK534-S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING • FEATURES

cd 7523

Contextual Info: B B e PER DE T T AGL IO POLARI ZZA ZION I VEDERE F OGLIO 2 DI 3 PER P/N5 CONTROPARTI P O R T A M A S C H I , VEDERE TABELLA. CFOR P O L A R I Z A T I ON DETAIL SEE SHEET 2 OF 3, C O U N T E R P A R T CAP H S G . P/NS SEE THE T A B L E . C Ì82S2S-8 VE .RS. V E R T IC A L E

LF2246QC-33

Contextual Info: LF2246 11 x 10-bit Image Filter DESCRIPTION FEATURES □ 40 M H z Data and Coefficient Input and Com putation Rate □ Four 11 x 10-bit M ultipliers w ith Individual Data and Coefficient Inputs and a 25-bit A ccum ulator □ U ser-Selectable Fractional or

12AH-3

Abstract: 12A H3 12ah3 VEGA vega-lite 550 d2s diode series Lambda VEGA Lambda VEGA 750 diode d2s EN61010-1
Contextual Info: Vega-Lite 550 to 900W Multiple Output Modular Power Supply ‹ Suitable for higher volume applications ‹ 1-10 Wide Range Outputs With Adjustment ‹ Output Voltages From 1.8 - 56V ‹ Medical Approval Options ‹ MIL-STD-810 Shock and Vibration Ve g a F e a t u r e s a n d B e n e f i t s