D3 TRANSISTOR Search Results

LA 2910

Abstract: D2 Pack dsa001
Contextual Info: SVR1086-2.85M, Z, D2, & D3 thru SVR1086-12M, Z, D2, & D3 PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 1.5 Amps 2.85 thru 12Volts LOW DROPOUT POSITIVE LINEAR VOLTAGE REGULATOR

DSA-001

Abstract: dsa001 D2 Pack lm117 3.3V LM117 SVR1085-12M voltage regulator, 0 to 48V, 0 to 15 amps DS-A001
Contextual Info: SVR1085-3.3M, Z, D2, & D3 thru SVR1085-12M, Z, D2, & D3 PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 1.5 Amps 2.85 thru 12Volts LOW DROPOUT POSITIVE LINEAR VOLTAGE REGULATOR

power transistor 1802

Abstract: transistor 010C ARF1510
Contextual Info: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

power transistor 1802

Abstract: ARF1511 750w planar transistor C 4927 rf power generator ARF 250v 1500w
Contextual Info: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

Contextual Info: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

Contextual Info: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

AMPLIFIER 1500w

Abstract: Simple test MOSFET Procedures Transistor S1D ARF1510 750w planar transistor AN 1510
Contextual Info: D1 ARF1510 D3 G1 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 RF POWER MOSFET D3 D1 G3 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 400V 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.

AMPLIFIER 1500w

Abstract: ARF1510 15VCrss
Contextual Info: D1 ARF1510 D3 G1 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 RF POWER MOSFET D3 D1 G3 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 400V 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.

rf power generator

Abstract: ARF1511 750w planar transistor ARF 250v 1500w
Contextual Info: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 ARF1511 S1D2 G2 RF POWER MOSFET G3 G1 S3D4 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 380V 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.

C 4927

Abstract: AMPLIFIER 1500w Simple test MOSFET Procedures ARF1511
Contextual Info: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 ARF1511 S1D2 G2 RF POWER MOSFET G3 G1 S3D4 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 380V 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.

Contextual Info: mß/EREX KD221275A7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 DlISl D3 flinQtOfl Transistor Module 75 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

HN1V01H

Contextual Info: HN1V01H TO SH IBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1V01H Unit in mm AM RADIO BAND TUNING APPLICATIONS. “ “0.3 4.5 - 0.2 MAXIMUM RATINGS (Ta = 25°C (D1# D2, D3, D4) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range

Q62702-S510

Contextual Info: SIPMOS Kleinsignaltransistoren SIPMOS®Small-Signal Transistors Bedrahtete Bauformen Leaded Types Typ Type ^DS max. V ^ 3S (thj V (max) mA Iff [» Ä D3 {on) max N-Kanal-Anreicherungstypen . Aot mW Bestellnummer Ordering Code Gehäuse Package 1! Bild Figure

BCW32

Abstract: BCW31 BCW33
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS

BFP96

Abstract: BFP96 P6 BFQ32C OA74 Philips MBB UBB824 1462, TRANSISTOR MB8627 transistor 1548
Contextual Info: Philips Semiconductors bbSB'ÎBl D D3 14Û 5 1ÔS M A P X Product specification NFN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE ]> PINNING NPN transistor in hermetically sealed sub-miniature SOT173 and SOT173X micro-stripline envelopes.

301 marking code PNP transistor

Abstract: Marking Y1 ROHM D3A transistor marking D3N marking code D3 SC-74
Contextual Info: UMD3N IMD3A Transistor, digitai, dual, NPN and PNP, with 2 resistors Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) packages UM D3N (UMT6) 2.0±Q,2 package marking: UMD3N and IMD3A; D3 1,3±0.1 I 0.65 package contains a PNP

Contextual Info: BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.09 0.48 0.38 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1.02

IRFMJ044

Contextual Info: PD-97258 POWER MOSFET SURFACE MOUNT D3 PAK IRFMJ044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMJ044 RDS(on) ID 0.04 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: BCW31 BCW32 BCW33 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS PARTMARKING DETAILS:BCW31 - D1 BCW32 - D2 BCW33 - D3 BCW31R - D4 BCW32R - 05 BCW33R - D6 ABSOLUTE MAXIMUM RATINGS VALUE UNIT v CB0 32 V V ECO 32 V PARAMETER SYM BO L C ollector-B ase V oltage

bcw33

Contextual Info: n BCW31 BCW32 BCW33 i SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 • ^pT59 Ö3B 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 2 .4 1.4 1.2

BCW32

Abstract: BCW33 33T4 BCW31
Contextual Info: BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE O UTLIN E D ETAILS ALL DIM EN SION S IN mm _3.0_ 2.8 0.48 0.38 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 0.14 _L02

IRFBC30AF

Abstract: HV9906 DC DC converter 400V lighting traffic light controller 2N2222 NPN Transistor features OFF-LINE SWITCH MODE TRANSFORMERS NPN transistor 2n2222 8uF 400V advantages of 1N4007 HV9906P
Contextual Info: Product Summary Sheet HV9906 FlexSwitch Simple Off-Line/PFC & >9V DC/DC Switcher NPN Bipolar Transistor Array or Matched 2N2222 1N4007 D1 D2 12VDC to 400VDC or 65VAC to 280VAC D4 D3 C1 0.047uF 400V D6 MURS160 L2 15uH C3 0.033uF D7 MURS160 C4 Optional Q1 +

AN9322

Abstract: AN9321 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334
Contextual Info: RFD3N08L, RFD3N08LSM Data Sheet Title FD3 8L, D3 8LS bt A, V, 00 m, gic vel, Cha el wer OSTs utho July 1999 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors