D3 TRANSISTOR Search Results

LA 2910

Abstract: D2 Pack dsa001
Contextual Info: SVR1086-2.85M, Z, D2, & D3 thru SVR1086-12M, Z, D2, & D3 PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 1.5 Amps 2.85 thru 12Volts LOW DROPOUT POSITIVE LINEAR VOLTAGE REGULATOR

DSA-001

Abstract: dsa001 D2 Pack lm117 3.3V LM117 SVR1085-12M voltage regulator, 0 to 48V, 0 to 15 amps DS-A001
Contextual Info: SVR1085-3.3M, Z, D2, & D3 thru SVR1085-12M, Z, D2, & D3 PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 1.5 Amps 2.85 thru 12Volts LOW DROPOUT POSITIVE LINEAR VOLTAGE REGULATOR

Contextual Info: High Voltage Latch-Up Proof, Quad SPST Switches ADG5412/ADG5413 FEATURES FUNCTIONAL BLOCK DIAGRAMS S1 D1 S2 S2 IN2 IN2 D2 D2 ADG5412 ADG5413 S3 S3 IN3 IN3 D3 D3 Relay replacement Automatic test equipment Data acquisition Instrumentation Avionics Audio and video switching

power transistor 1802

Abstract: transistor 010C ARF1510
Contextual Info: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

ARF1511

Abstract: 225MH
Contextual Info: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

power transistor 1802

Abstract: ARF1511 750w planar transistor C 4927 rf power generator ARF 250v 1500w
Contextual Info: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

Contextual Info: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

Contextual Info: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

Contextual Info: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

AMPLIFIER 1500w

Abstract: Simple test MOSFET Procedures Transistor S1D ARF1510 750w planar transistor AN 1510
Contextual Info: D1 ARF1510 D3 G1 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 RF POWER MOSFET D3 D1 G3 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 400V 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.

AMPLIFIER 1500w

Abstract: ARF1510 15VCrss
Contextual Info: D1 ARF1510 D3 G1 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 RF POWER MOSFET D3 D1 G3 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 400V 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.

rf power generator

Abstract: ARF1511 750w planar transistor ARF 250v 1500w
Contextual Info: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 ARF1511 S1D2 G2 RF POWER MOSFET G3 G1 S3D4 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 380V 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.

C 4927

Abstract: AMPLIFIER 1500w Simple test MOSFET Procedures ARF1511
Contextual Info: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 ARF1511 S1D2 G2 RF POWER MOSFET G3 G1 S3D4 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 380V 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.

Contextual Info: mß/EREX KD221275A7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 DlISl D3 flinQtOfl Transistor Module 75 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

Q62702-S510

Contextual Info: SIPMOS Kleinsignaltransistoren SIPMOS®Small-Signal Transistors Bedrahtete Bauformen Leaded Types Typ Type ^DS max. V ^ 3S (thj V (max) mA Iff [» Ä D3 {on) max N-Kanal-Anreicherungstypen . Aot mW Bestellnummer Ordering Code Gehäuse Package 1! Bild Figure

BCW32

Abstract: BCW31 BCW33
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS

BCW32R

Abstract: BCW33R BCW31 BCW31R BCW32 BCW33 DS44
Contextual Info: BCW31 BCW32 BCW33 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS PARTMARKING DETAILS:BCW31 - D1 BCW32 - D2 BCW33 - D3 BCW31R - D4 BCW32R - D5 BCW33R - D6 ABSOLUTE MAXIMUM RATINGS VALUE SYMBOL PARAMETER UNIT Collector-Base Voltage V CBO 32 V Collector-Emltter Voltage lc = 2.0mA

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS

BFP96

Abstract: BFP96 P6 BFQ32C OA74 Philips MBB UBB824 1462, TRANSISTOR MB8627 transistor 1548
Contextual Info: Philips Semiconductors bbSB'ÎBl D D3 14Û 5 1ÔS M A P X Product specification NFN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE ]> PINNING NPN transistor in hermetically sealed sub-miniature SOT173 and SOT173X micro-stripline envelopes.

301 marking code PNP transistor

Abstract: Marking Y1 ROHM D3A transistor marking D3N marking code D3 SC-74
Contextual Info: UMD3N IMD3A Transistor, digitai, dual, NPN and PNP, with 2 resistors Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) packages UM D3N (UMT6) 2.0±Q,2 package marking: UMD3N and IMD3A; D3 1,3±0.1 I 0.65 package contains a PNP

Contextual Info: BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.09 0.48 0.38 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1.02

IRFMJ044

Contextual Info: PD-97258 POWER MOSFET SURFACE MOUNT D3 PAK IRFMJ044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMJ044 RDS(on) ID 0.04 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD-97258 POWER MOSFET SURFACE MOUNT D3 PAK IRFMJ044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMJ044 RDS(on) ID 0.04 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: BCW31 BCW32 BCW33 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS PARTMARKING DETAILS:BCW31 - D1 BCW32 - D2 BCW33 - D3 BCW31R - D4 BCW32R - 05 BCW33R - D6 ABSOLUTE MAXIMUM RATINGS VALUE UNIT v CB0 32 V V ECO 32 V PARAMETER SYM BO L C ollector-B ase V oltage