D27 DIODE Search Results

MA151K

Abstract: OH00035
Contextual Info: Diodes Composite Elements , Triggers, Hall Elements • Triggers DO-35 (D27) In << C L £ Package (A) Leadless (D30) MA64 MA2R064 150 V bo Topr ( ”C) 2!) 100 Ibo 1 A) min (V) max (V) Ib O 28 36 V max (V) typ (/iA ) (M > VB0 10 100 1 )T a = 2 5 ° C ,t < 1 0 / / s, f= 6 0 H z

KY710

Abstract: KY712 KY701F KY717 KY708 KY715 KY718 KY719 KY702F KY711
Contextual Info: I SILICON RECTIFIER DIODES 0.7. 1, 10, 20 A SILIZIUM GLEICHRICHTERDIODEN 0,7, 1, 10, 20 A Type Typ Maximum ratings • Grenzdaten If /W l/SM Ua ef UR W M UfiSM Ro min A A V s V V a Characteristic data • Kenndaten at Uf If iRmai a t bei bei V A f«A KY701F

Contextual Info: Diodes • Silicon Diodes Switching Vr Type No. (V ) If Ir * Ir (AV) max. (nA) (mA) CD max. *typ. (pF) trr max. (ns) Package Vr Type No. (V ) N o. If Ir * Ir (av) max. (nA) (mA) Co max. *typ. trr max. (ns) Package No. (P F ) MA111 « 80 100 100 1.2 3 S Mini (2 pins)

MA154WA

Abstract: MA162 MA177 MA10152D MA171 ma27q MA27 MA27T Bta MA10152K MA1015
Contextual Info: Diodes I Silicon Diodes Switching Type No. V If r (mA) max. (nA) * I r (AV) (V ) Ir CD max. *typ. (pF) Co trr max. (ns) Package No. Type No. V If Ir (mA) max. (nA) max. * typ. (PF) r * I r (a v ) (V ) trr max. (ns) Package No. S M in i (2 pins) D3 M A176W K

BPC817B

Abstract: BPC-817 TNY279GN J117 DO-214AC 1.5KE-200A 2n2 1kv CAPR508 CAPR508-381X1016X1168 C4622
Contextual Info: F2_220VAC F1_220VAC J11-6 J11-7 F3 125mA DO-214AC DIODE_GS1D D24 DO-214AC D25 DIODE_GS1D DO-214AC DO-214AC FUSE_202_SERIES D23 DIODE_GS1D D22 DIODE_GS1D + 2 1 C47 22u 400V CAPELEC_D12.5_P5 C42 2n2 1KV CAPR508-381X1016X1168 U10 TNY279GN DO-214AC D26 US1J R102

Diode d29 08

Abstract: DIODE D29 -08
Contextual Info: AZ23-Series VISHAY Vishay Semiconductors Small Signal Zener Diodes, Dual Features • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23 case with the

AZ23C3V0

Abstract: d29 08 AZ23C2V7 AZ23C3V3 AZ23C3V6 AZ23C3V9 AZ23C4V3 BZT52C BZX84C DZ23
Contextual Info: AZ23-Series VISHAY Vishay Semiconductors Small Signal Zener Diodes, Dual Features • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23 case with the

Contextual Info: AZ23-V-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • These diodes are also available in other case styles and configurations including: e3 the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23 case with the type designation

AZ23C3V3-V

Abstract: AZ23B36-V AZ23C5V6V
Contextual Info: AZ23-V-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • These diodes are also available in other case styles and configurations including: the dual diode common cathode configu- e3 ration with type designation DZ23, the single diode SOT-23 case with the type designation

diode zener ZD 15

Abstract: diode zener fz 12.6 zener diode d27 zener zd 31 diode zener ZD 39 zener diode fz diode zener ZD 200 diode zd 33 FZD18 diode zd 22
Contextual Info: ZENER DIODE F SERIES SEMICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONS > I D. Zeiier Diode F Series(lW K Ta=25°C Min(V) Max(V) Iz(mA) M ax.Zener Impedance Rz( Q ) FZD2.7 2.6 2.9 40 FZD3.0 2.8 3.2 FZD3.3 3.1 FZD3.6 IR(uA) VR(V) T emperature Coefficient

Contextual Info: □IXYS DSEP 8-06A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Soft Recovery V RSM V V RRM 10 A V RRM 600 V t rr 35 ns TO-220 AC Type V 600 600 DSEP 8-06A A = Anode, C = Cathode Symbol Test Conditions Maximum Ratings per diode U rms 35

DIODE D29 -08

Abstract: zener diode d27 Diode d29 08
Contextual Info: AZ23 Series VISHAY Vishay Semiconductors Dual Common-Anode Zener Diodes Features • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23 case with the

zener D13 marking

Abstract: Diode d29 08
Contextual Info: AZ23 Series VISHAY Vishay Semiconductors Dual Common-Anode Zener Diodes 3 Features • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designa- tion DZ23, the single diode SOT-23 case with the

DIODE D29 -08

Abstract: D8 marking, SOD123 Vishay zener SOT23 D13 marking code zener diode d27 Diode d29 08
Contextual Info: AZ23 Series VISHAY Vishay Semiconductors Dual Common-Anode Zener Diodes Features • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23 case with the

Contextual Info: FORWARD INTERNATIONAL ELECTRON 11 U D. ZENER DIODE F SERIES SEMICONDUCTOR TECHNICAL DATA Zener Diode F Series lW Ta=25°C M in(V ) M ax(V ) Iz(m A ) M ax.Z ener Im pedance Rz( Q ) FZD 2.7 2.6 2.9 40 FZD 3.0 2.8 3.2 FZD3.3 3.1 FZD 3.6 IR (uA ) V R (V ) T cm perature

0D27

Contextual Info: SEMiX 101GD126HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT  .  * 1 .  ')0 * 145   ()*-

6822

Abstract: resistor 56E BA281
Contextual Info: SbE » • VllDÖSb ODMOOR? TÔT « P H I N PHILIPS INTERNATIONAL SbE T> II BA281 T- 07-07 ÜN SILICON RATIO DETECTOR DIODE Silicon planar epitaxial diode in DO -35 envelope, intended fo r use in ratio detector circuits. Due to small spreads of forw ard voltage at low currents and of junction capacitance, the diodes can be used as

TCD2713DG

Abstract: Toshiba
Contextual Info: TCD2713DG TOSHIBA CCD Linear Image Sensor TENTATIVE CCD Charge Coupled Device TCD2713DG The TCD2713DG is a high sensitive and low dark current 7500 pixels x 4 line CCD color image sensor. The sensor is designed for color scanner. The device contains a row of 7500 pixels × 4 line photodiodes

marking D9 diode

Abstract: dz 140 case d29 marking code D18 ZENER marking D9 sot-23 marking D9 marking D9 SOT-23 AZ23C3V0 AZ23C3V3 DIODE D28
Contextual Info: AZ23C2V7 THRU AZ23C51 Dual Surface Mount Zener Diode Voltage Range 2.7 to 51 Volts 300m Watts Power Dissipation SOT-23 Features a a a a a 0.020 0.51 0.015(0.37) Dual zeners in common anode configuration 300 mW power dissipation rating Ideally suited for automated insertion

D22 diode marking code

Abstract: marking code D23 marking D25 KDS -5a marking D9 AZ23C3V0 DIODE D28 transistor marking D9 AZ23C2V7 AZ23C3V3
Contextual Info: AZ23C2V7 - AZ23C51 300mW DUAL SURFACE MOUNT ZENER DIODE Features • · · · · Dual Zeners in Common Anode Configuration 300 mW Power Dissipation Rating Ideally Suited for Automatic Insertion D VZ For Both Diodes in One Case is £ 5% Common Cathode Style Available

D22 diode marking code

Abstract: marking d29 sot23 marking CODE D22 marking d9 sot23 D28 SOT23 marking KDK SOT23 marking d26 Marking KDA AZ23C22 diode SOT23 D13 marking code
Contextual Info: AZ23C2V7 - AZ23C51 300mW DUAL SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features • • • • • Dual Zeners in Common Anode Configuration 300 mW Power Dissipation Rating Ideally Suited for Automatic Insertion ∆ VZ For Both Diodes in One Case is ≤ 5%

AZ23C2V7

Abstract: AZ23C3V0 AZ23C3V3 AZ23C3V6 AZ23C3V9 AZ23C4V3 AZ23C4V7 AZ23C51 sot-23 DIODE marking code D3 marking d29 sot23
Contextual Info: AZ23C2V7 THRU AZ23C51 Dual Surface Mount Zener Diode Voltage Range 2.7 to 51 Volts 300m Watts Power Dissipation SOT-23 Features 0.020 0.51 0.015(0.37) Dual zeners in common anode configuration 300 mW power dissipation rating Ideally suited for automated insertion

marking code D22

Abstract: KDK SOT-23
Contextual Info: AZ23C2V7 - AZ23C51 VISHAY 300mW DUAL SURFACE MOUNT ZENER DIODES /uT E M ir I POWER SEMICONDUCTOR J Features Dual Zeners in Common Anode Configuration 300 mW Power Dissipation Rating Ideally Suited tor Automatic Insertion A Vz For Both Diodes in One Case is < 5%

Contextual Info: N AUER PHILIPS/DISCRETE b'lE » • J bbS3^31 0D2b3a2 143 M A P X _ BB119_ SILICON VARIABLE CAPACITANCE DIODE Planar-diffused diode in a DO-35 envelope intended for autom atic frequency control in radio and television r e c e iv e r s .