D2502 DIODE Search Results

Contextual Info: Ordering number : ENN5766A SVD101 Hyperabrupt Junction Type GaAs Varactor Diode SVD101 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274A [SVD101] 0.5 1.0 max 1.4 1 : Cathode 2 : Anode 1.5 4.4 1.5 1 2 0.5 0.1

Contextual Info: Ordering number : ENN5770A SVD302 Hyperabrupt Junction Type GaAs Varactor Diode SVD302 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274A [SVD302] 0.5 1.0 max 1.4 1 : Cathode 2 : Anode 1.5 4.4 1.5 1 2 0.5 0.1

Contextual Info: Ordering number : ENN5500B SVD301 Hyperabrupt Junction Type GaAs Varactor Diode SVD301 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274A [SVD301] 0.5 1.0 max 1.4 1 : Cathode 2 : Anode 1.5 4.4 1.5 1 2 0.5 0.1

TA-3713

Abstract: D2502 SVD301 GaAs varactor diode D2502 diode
Contextual Info: Ordering number : ENN5500C SVD301 SANYO Semiconductors DATA SHEET SVD301 Hyperabrupt Junction Type GaAs Varactor Diode X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD301] 2 1.43 1.35 1.8 0.4 0.5

D2502

Abstract: SVD201 D2502 diode
Contextual Info: Ordering number : ENN5768B SVD201 Hyperabrupt Junction Type GaAs Varactor Diode SVD201 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD201] 2 1.43 1.35 1.8 0.4 0.5 0.1 0.9 1 : Cathode 2 : Anode

D2502

Abstract: SVD102
Contextual Info: Ordering number : ENN5767B SVD102 Hyperabrupt Junction Type GaAs Varactor Diode SVD102 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD102] 2 1.43 1.35 1.8 0.4 0.5 0.1 0.9 1 : Cathode 2 : Anode

D2502

Abstract: ECSP1006-2 ESGD100
Contextual Info: Ordering number : ENN7320A ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321A [ESGD100] Type No. Indication Top view

Contextual Info: Ordering number : ENN5769A SVD202 Hyperabrupt Junction Type GaAs Varactor Diode SVD202 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274A [SVD202] 0.5 1.0 max 1.4 1 : Cathode 2 : Anode 1.5 4.4 1.5 1 2 0.5 0.1

Contextual Info: Ordering number : ENN7320A ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321A [ESGD100] Type No. Indication Top view

D2502

Abstract: SVD101
Contextual Info: SVD101 Ordering number : ENN5766C SANYO Semiconductors DATA SHEET SVD101 Hyperabrupt Junction Type GaAs Varactor Diode X Band VCO, PLO Features • • High Q. High capacitance ratio. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions

Contextual Info: Ordering number : ENN5768A SVD201 Hyperabrupt Junction Type GaAs Varactor Diode SVD201 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274A [SVD201] 0.5 1.0 max 1.4 1 : Cathode 2 : Anode 1.5 4.4 1.5 1 2 0.5 0.1

D2502

Abstract: SVD301 GaAs varactor diode SANYO DIODE
Contextual Info: Ordering number : ENN5500C SVD301 Hyperabrupt Junction Type GaAs Varactor Diode SVD301 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD301] 2 1.43 1.35 1.8 0.4 0.5 0.1 0.9 1 : Cathode 2 : Anode

GaAs varactor diode

Abstract: D2502 SVD101
Contextual Info: Ordering number : ENN5766C SVD101 SVD101 Hyperabrupt Junction Type GaAs Varactor Diode X Band VCO, PLO Features • • High Q. High capacitance ratio. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Peak Reverse Voltage

D2502

Abstract: SVD101
Contextual Info: Ordering number : ENN5766B SVD101 Hyperabrupt Junction Type GaAs Varactor Diode SVD101 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD101] 2 1.43 1.35 1.8 0.4 0.5 0.1 0.9 1 : Cathode 2 : Anode

Contextual Info: Ordering number : ENN5767A SVD102 Hyperabrupt Junction Type GaAs Varactor Diode SVD102 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274A [SVD102] 0.5 1.0 max 1.4 1 : Cathode 2 : Anode 1.5 4.4 1.5 1 2 0.5 0.1

D2502

Abstract: SVD302 sanyo TA-3713 ta3713
Contextual Info: Ordering number : ENN5770B SVD302 Hyperabrupt Junction Type GaAs Varactor Diode SVD302 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD302] 2 1.43 1.35 1.8 0.4 0.5 0.1 0.9 1 : Cathode 2 : Anode

Contextual Info: Ordering number : ENN7320 ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features • • Package Dimensions Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321 [ESGD100]

w503

Abstract: D2502 FW503 MCH3306 SBS004 Schottky Barrier 3A ENN7312
Contextual Info: Ordering number : ENN7312 FW503 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FW503 DC / DC Converter Applications Composite type with a low ON-resistance, ultrahighunit : mm speed switching, low voltage drive, P-channel 2210 MOSFET and a short reverse recovery time, low

2SC5831

Abstract: D2502 ITR06005 ITR06006 ITR06007 ITR06008 ITR06009
Contextual Info: Ordering number : ENN7261 2SC5831 NPN Epitaxial Planar Silicon Transistor 2SC5831 Driver Applications Preliminary Package Dimensions Suitable for use in switching of inductive load motor drivers, printer hammer drivers, relay drivers . unit : mm 2042B •

Q8031

Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED

ISL9504

Abstract: "board view" macbook macbook C4130 k20 apple PP3V42G3H PP3V42 U6200 58A-6 p66 apple
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED

l9122

Abstract: IT8510 ATI RC415ME CON3602 ATI SB600 RC415ME ics951463 X51RL L1208 asus
Contextual Info: 5 4 3 2 1 <60 7IVMIV &PSGO MEKVEQ FAN + SENSOR MAX6657MSA PAGE 4 CLOCK GEN ICS951463 CPU Merom-CM D PAGE 5 DISCHARGER CIRCUIT D PAGE 37 PAGE 2,3 Power On Sequence FSB 533MHz PAGE 40 DC/BATT IN LVDS & INV ATI RC415M PAGE 12 CRT OUT PAGE 41 DDR2-533 Dual Channel DDR2

L9122

Abstract: CON3602 12G04600479A ics951463 ATI SB600 IT8510 asus RC415ME c3506 ATI RC415ME
Contextual Info: 5 4 3 2 1 86 7IVMIV &PSGO MEKVEQ FAN + SENSOR MAX6657MSA PAGE 4 CLOCK GEN ICS951463 CPU YONAH-CM D PAGE 5 DISCHARGER CIRCUIT D PAGE 37 PAGE 2,3 Power On Sequence FSB 533MHz DC/BATT IN LVDS & INV ATI RC415M PAGE 12 CRT OUT PAGE 13 PAGE 41 DDR2-533 Dual Channel DDR2

ar9350

Abstract: PP3V42 p51 apple PP3V42G3H FERR-220-OHM apple lcd pinout B20 SC70-6 p66 apple LPC Debug Connector APPLE LCD INVERTER
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MLB,M1 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE D DATE 428208PRODUCTION RELEASED 03/04/06