D221 Search Results

LM318 data

Abstract: LM318 APPLICATION LM318D LM318 LM218 LM318 application note LM318J LM218D LM218P LM318JG
Contextual Info: LM218, LM318 HIGH-PERFORMANCE OPERATIONAL AMPLIFIERS D2219, JUNE 1976-REVISED OCTOBER 1988 • Small-Signal Bandwidth . . . 15 MHz Typ D, JG , OR P PACKAGE TOP VIEW • Slew Rate . . . 50 V/ |is Min BAL/COMP C • Bias Current. . . 250 nA Max (LM218) • Supply Voltage Range . . . ± 5 V to ± 20 V

LM318D

Abstract: LM318 LM218 LM318 data LM318J LM218D LM218P LM318JG
Contextual Info: TEXAS INSTR LIN/INTFC m fl=ibl72M DD77455 b LM218, LM318 HIGH-PERFORMANCE OPERATIONAL AMPLIFIERS 7 - ^ 7 9 '0 6 -/0 IflE D D2219, JUNE 1976—REVISEO OCTOBER 1988 • Small-Signal Bandwidth . . . 15 MHz Typ D, JG , OR P PACKA G E (TOP VIEW) • Slew R a te . . . 50 V/|is Min

Contextual Info: Xcelite 22-10 AWG Die Set for MAC2210 Maxi-Crimper-Insulated Terminals & Splices Product Details Catalog No. UPC Code Description For End Item Packaging Low Res. Image High Res. Image Stock Item D2210 037103490186 Die Sets MAC2210 Industrial Box/Carton D2210_100.jpg

d2219uk

Contextual Info: PR EL IM INA RY TetraFET D2219UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss

ORD2210

Abstract: 150AC D2210 J2R0020-38-21
Contextual Info: J2R0020-38-21 l OR D2210 REED SWTICH D2210 High Power n GENERAL DESCRIPTION The D2210 is a single-contact reed switch designed for high current of 1.0 A DC and 0.7 A AC and high power of AC 70 VA and DC 50 W. The contacts are sealed within the glass tube with

D2210UK

Contextual Info: TetraFET D2210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

D2211UK

Contextual Info: TetraFET D2211UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 R A 3 6 F 5 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 7.2V – 1GHz SINGLE ENDED L I P H G FEATURES DBC3 Package PIN 1 Source PIN 5 Source • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: TetraFET D2210UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G

Contextual Info: TetraFET D2219UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P H GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE PIN 1 – SOURCE

D2213UK

Contextual Info: TetraFET D2213UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 1GHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS

D2211UK

Contextual Info: TetraFET D2211UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 F A 3 6 5 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 7.2V – 1GHz SINGLE ENDED L I P H G FEATURES DBC1 Package • SIMPLIFIED AMPLIFIER DESIGN

transistor D2217

Abstract: 75452 D2217 TRANSISTOR d2217
Contextual Info: I_ • ■ I I I SN55451B THRU SN55454B SN75451B THRU SN75454B DUAL PERIPHERAL DRIVERS SLRS021 A - D2217, DECEMBER 1976 - REVISED MAY 1993 PERIPHERALDRIVERS FOR HIGH-CURRENT SWITCHING AT VERYHIGH SPEEDS • Characterized for Use to 300 mA • High-Voltage Outputs

LM217 NATIONAL

Contextual Info: LM217, LM317 3 TERMINAL ADJUSTABLE REGULATORS _ D2212. SEPTEMBER 1977-REVISED FEBRUARY 1988 • Output Voltage Range Adjustable from 1.2 V to 3 7 V • Peak Output Current Constant Over Temperature Range o f Regulator • Output Current Capability

D2212UK

Contextual Info: TetraFET D2212UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D2214UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz SINGLE ENDED C B A ! D 2 p ls FEATURES E • SIMPLIFIED AMPLIFIER DESIGN  • SUITABLE FOR BROAD BAND APPLICATIONS H G

7127

Contextual Info: TetraFET D2218UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 500MHz SINGLE ENDED C B A ! D 2 p ls FEATURES E • SIMPLIFIED AMPLIFIER DESIGN  • SUITABLE FOR BROAD BAND APPLICATIONS H

D2213

Abstract: 08af D2213UK
Contextual Info: TetraFET D2213UK SEME LAB ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 1GHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M

d2219uk

Abstract: DSA00300037
Contextual Info: TetraFET D2219UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED H K FEATURES M L J • SIMPLIFIED AMPLIFIER DESIGN E F G • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: nil Vrr r = mi TetraFET D2219UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2 .5 W - 1 2 .5 V - 1GHz SINGLE ENDED I D f C A I FEATURES • SIMPLIFIED AMPLIFIER DESIGN G • SUITABLE FOR BROAD BAND APPLICATIONS

transistor D2217

Abstract: d2217 SN75450 sn75450a 453B SN55451B SN55452B SN55453B SN55454B SN75451B
Contextual Info: SN55451B THRU SN55454B SN75451B THRU SN75454B DUAL PERIPHERAL DRIVERS SLRS021A – D2217, DECEMBER 1976 – REVISED MAY 1993 • • • • • • Characterized for Use to 300 mA High-Voltage Outputs No Output Latch-Up at 20 V After Conducting 300 mA High-Speed Switching

D2212UK

Contextual Info: TetraFET D2212UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET SEME D2213UK LAB ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 1GHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M

D2210UK

Abstract: RF35 ER35 core
Contextual Info: TetraFET D2210UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G

Contextual Info: TetraFET D2212UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS