D1345 Search Results

PA1911

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1911 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 2.8 ±0.2 The µPA1911 is a switching device which can be driven

PA1855

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DS1345Y/AB P R E L IM IN A R Y DALLAS SEMICONDUCTOR FEATURES DS1345Y/AB 1024K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • Built-in lithium battery provides more than 10 years of data retention 34 33 32 31 30 29 28 27 26 25 24 23 • Data is automatically protected during V cc power

vqc 10 d

Abstract: 34-PIN DS1345 DS1345BL DS1345YL Lithium Battery Protection Circuit for Battery P
Contextual Info: DS1345YL/BL DS1345YL/BL DALLAS SEMICONDUCTOR 1024K Nonvolatile SRAM with Battery M onitor NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1345Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • B u ilt-in lithium b a tte ry p ro v id e s m o re th a n 10 ye a rs of d a ta re tentio n

DS1345

Abstract: DS1345AB DS1345Y DS1334
Contextual Info: DS1345Y/AB PRELIMINARY DS1345Y/AB 1024K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • Built–in lithium battery provides more than 10 years of data retention • Data is automatically protected during VCC power loss • Power supply monitor resets processor when VCC

C461B

Abstract: D1162 B11B6
Contextual Info: 11 11111111 1 1 111111111111111111111111111111234567894A1 1 1 BCDEFC1 2 1212111 21345164789AB1C9DABE1F112111 1 1!31"1 21F3FE1111 F1!"#8$1 2 12A#1C$$%&1%' % 1D%*%1

PA1911

Abstract: D1345
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1911 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 • Can be driven by a 2.5-V power source • Low on-state resistance

PA1855

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1855 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1855 is a switching device which can be driven directly by a 2.5 V power source. The µPA1855 features a low on-state resistance and

Contextual Info: DS1345Y/AB P R E L IM IN A R Y DS1345Y/AB DALLAS 1024K Nonvolatile SRAM with Battery Monitor SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Replaces 128K x R volatile static RAM or EEPROM

DS1345

Abstract: DS1345BL DS1345YL
Contextual Info: DS1345YL/BL DS1345YL/BL 1024K Nonvolatile SRAM with Battery Monitor NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1345Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • Built–in lithium battery provides more than 10 years of data retention • Data is automatically protected during VCC power

NP24N06HLB

Abstract: NP24N06ILB MOS 6502
Contextual Info: PRELIMINARY PRODUCT INFORMATION M O S Field Effect PowerTransistor N P 2 4 N 0 6 H L B ,N P 2 4 N 0 6 1 L B SW ITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS in millimeter DESCRIPTION This product is N-Channel MOS Field Effect Transistor de­

D1345

Abstract: MJ5025 NP12N06HLB NP12N06ILB
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP12N06HLB, NP12N06ILB SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. PART NUMBER PACKAGE

PA1855

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1855 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1855 is a switching device which can be driven directly by a 2.5 V power source. The µPA1855 features a low on-state resistance and

D1345

Abstract: 34-PIN DS1345 DS1345AB DS1345Y DS1345Y-70 monitor btc
Contextual Info: D S 1345Y /A B P R E L IM IN A R Y l% A I I j l o D S 1 3 4 5 Y /A B 10 2 4 K U A L L A 9 Nonvolatile SR A M w jtl1 Battery Monitor s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Built-in lithium battery provides more than 10 years of data retention NC

DS1345

Abstract: DS1345BL DS1345YL
Contextual Info: DS1345YL/BL •»A a ■ DS1345YL/BL 1024K Nonvolatile SRAM with Battery Monitor s a U A L L A O s e m ic o n d u c t o r NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1345Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • B u ilt-in lithium battery provides more than 10 years of

D1345

Abstract: NP24N06HLB NP24N06ILB
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP24N06HLB, NP24N06ILB SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. PART NUMBER PACKAGE

Contextual Info: DS1345YL/BL •»A a ■ DS1345YL/BL Nonvolatile SRAM with Battery Monitor s a 1 024K U A L L A O s e m ic o n d u c t o r NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1345Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • B u ilt-in lithium battery provides more than 10 years of

PA1911

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

nec 501 t

Abstract: NP12N06HLB NP12N06ILB 2130m
Contextual Info: PRELIMINARY PRODUCT INFORMATION M O S Field Effect Power Transistor NP12N06HLB,NP12N06ILB SW ITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is N-Channel MOS Field Effect Transistor de­ 2.3±0.2 signed for high current switching applications.

Contextual Info: DATA SH EET MOS FIELD EFFECT TRANSISTOR / ¿ P A 1 9 1 1 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The jtiPAI 911 PACKAGE DRAWING Unit : mm is a switching device which can be driven

GFB7400D

Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest

equivalent transistor D1555

Abstract: transistor d1555 transistor d1047 d1555 transistor TRANSISTOR DATASHEET D1555 delta plc DVP 14SS DVP-40EH DVP-10SX d1555 D1557
Contextual Info: PLC PLC DVP-PLC Application Manual 【Programming】 Table of Contents Chapter 1 Basic Principles of PLC Ladder Diagram Foreword: Background and Functions of PLC . 1-1 1.1 The Working Principles of Ladder Diagram . 1-1

DVP-10SX

Abstract: DVP-14SS delta plc DVP 14SS DVP-32EH DVP-80EH DVP-64EH DVP-32ES DVP-48EH DVP-60ES DVP-20EX
Contextual Info: PLC www.delta.com.tw/industrialautomation PLC ASIA Delta Electronics, Inc. Taoyuan1 31-1, Xingbang Road, Guishan Industrial Zone, Taoyuan County 33370, Taiwan, R.O.C. TEL: 886-3-362-6301 / FAX: 886-3-362-7267 Delta Electronics Jiang Su Ltd. Wujiang Plant3

Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 5 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1855 is a switching device which can be driven directly by a 2.5 V power source.