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Samtec Inc


Samtec Inc FFSD-10-S-60.00-01-N Ribbon Cables / IDC Cables .050 Low Profile Tiger Eye IDC Ribbon Cable Assembly
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	FFSD-10-S-60.00-01-N					1 $17.38 10 $16.12 100 $12.30 1000 $7.21 10000 $7.21	Get Quote
Samtec Inc TCMD-10-S-60.00-01 Ribbon Cables / IDC Cables 2.00 mm IDC Ribbon Cable Assembly
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TCMD-10-S-60.00-01					1 $13.98 10 $13.24 100 $11.11 1000 $7.74 10000 $7.74	Get Quote
Samtec Inc TCMD-10-S-60.00-01-SR Ribbon Cables / IDC Cables 2.00MM IDC RIBBON CABLE ASSY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TCMD-10-S-60.00-01-SR					1 $14.82 10 $14.03 100 $11.87 1000 $9.53 10000 $9.53	Get Quote
TTI	TCMD-10-S-60.00-01-SR	Each			1	1 $14.82 10 $14.03 100 $11.87 1000 $9.53 10000 $9.53	Buy Now
Samtec Inc TCSD-10-S-60.00-01 Ribbon Cables / IDC Cables IDC Socket Cable Assemblies
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TCSD-10-S-60.00-01					1 $15.87 10 $15.02 100 $12.28 1000 $7.89 10000 $7.89	Get Quote
Samtec Inc TCSD-10-S-60.00-01-N Ribbon Cables / IDC Cables IDC Socket Cable Assemblies
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TCSD-10-S-60.00-01-N					1 $15.87 10 $15.02 100 $12.28 1000 $7.89 10000 $7.89	Get Quote

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D10S60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IDB10S60C Abstract: PG-TO220-3-45 D10S60C JESD22 Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDB10S60C D10S60C IDB10S60C PG-TO220-3-45 D10S60C JESD22	PDF
D10S60C Abstract: IDH10S60C JESD22 Contextual Info: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDH10S60C PG-TO220-2 D10S60C D10S60C IDH10S60C JESD22	PDF
Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDB10S60C PG-TO263-3-2) D10S60C	PDF
D10S60C Abstract: IDB10S60C JESD22 D10S60 Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDB10S60C PG-TO220-3-45) D10S60C D10S60C IDB10S60C JESD22 D10S60	PDF
D10S60C Abstract: IDT10S60C JESD22 Contextual Info: IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDT10S60C PG-TO220-2-2 D10S60C PG-TO220-2-2: D10S60C IDT10S60C JESD22	PDF
AN 22022 Contextual Info: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery	Original	SDT10S60 PG-TO220-2-2. Q67040S4643 D10S60 AN 22022	PDF
d10s60c Contextual Info: IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDT10S60C PG-TO220-2-2 IDT10S60C PG-TO220-2-2 D10S60C	PDF
Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDB10S60C PG-TO220-3-45 D10S60C	PDF
Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDB10S60C PG-TO220-3-45) D10S60C	PDF
d10s60c Abstract: W6015 IDT10S60C JESD22 Contextual Info: IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDT10S60C PG-TO220-2-2 D10S60C d10s60c W6015 IDT10S60C JESD22	PDF
SDT10S60 Contextual Info: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery	Original	SDT10S60 P-TO220-2-2. D10S60 Q67040S4643 SDT10S60	PDF
Contextual Info: IDT10S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 24 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 10 A I F @ T C < 100 °C 15 A • Revolutionary semiconductor material - Silicon Carbide	Original	IDT10S60C PG-TO220-2-2 20mA2)	PDF
Contextual Info: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDH10S60C IDH10S60C PG-TO220-2 D10S60C	PDF
D10S60 Abstract: DIODE 200A 600V schottky PG-TO-220-2-2 Schottky diode TO220 SDT10S60 Contextual Info: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery	Original	SDT10S60 PG-TO220-2-2. D10S60 Q67040S4643 PG-TO-220-2-2 D10S60 DIODE 200A 600V schottky PG-TO-220-2-2 Schottky diode TO220 SDT10S60	PDF

D10S60C Contextual Info: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDH10S60C PG-TO220-2 D10S60C D10S60C	PDF
Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDB10S60C D10S60C	PDF