D1020 Search Results

Contextual Info: bQE D • 0133107 DGOORMS =137 ■ SMLB ' T v2>\ ' “2-5 SEMELAB PLC SEMELAB D1020UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 150W -28V —400MHz PUSH-PULL MECHANICAL DATA Dimensions DR c — S, —B— h FEATURES • EXTRA LOW Cr5s

D1020UK

Abstract: UT-47 18SWG 064R siemens plc
Contextual Info: TetraFET D1020UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 400MHz PUSH–PULL E (4 pls) F I FEATURES • EXTRA LOW Crss N O M J K • SIMPLIFIED AMPLIFIER DESIGN

ADTL2-18

Abstract: D2E diode smd DNC-10 dnc-9 1N4148W/D4 ADC08D1000 RELAY-RF303 CY7C68013A-100AXC XCF08PVO48 VCO190-492Ty
Contextual Info: BIG GIG REFERENCE PLATFORM ADC08/500/D500/D1000/D1020/D1500/D1520 MANUFACTURING KIT / REFERENCE DESIGN A1 National Semiconductor GHz 8 bit ADC + XILINX Virtex 4 SPECIAL NOTES These schematics reflect the current state of product development. This design

Contextual Info: Illl TetraFET E ^ E mi D1020UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1S O W -2 8 V -4 0 0 M H z PUSH-PULL FEATURES - EXTRA LOW Crss * SIMPLIFIED AMPLIFIER DESIGN DR PIN 1 SOURCE COMMON PIN 2

coaxial plc cable

Contextual Info: TetraFET D1020UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 400MHz PUSH–PULL E (4 pls) F I FEATURES • EXTRA LOW Crss N O M J K • SIMPLIFIED AMPLIFIER DESIGN

UT85 coaxial

Abstract: UT85 COAXIAL CABLE D1020UK UT47 UT85 064R
Contextual Info: TetraFET D1020UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 400MHz PUSH–PULL E (4 pls) F I FEATURES • EXTRA LOW Crss N O M J

D1020UK

Contextual Info: TetraFET D1020UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 400MHz PUSH–PULL E (4 pls) F I FEATURES • EXTRA LOW Crss N O M J K • SIMPLIFIED AMPLIFIER DESIGN

UT-47

Abstract: UT85 coaxial ut47 UT85 COAXIAL CABLE "storm products" coaxial plc cable D1020UK EXE18 19/30 S1TW coaxial cable siemens plc UT85 coax
Contextual Info: TetraFET D1020UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 400MHz PUSH–PULL E (4 pls) F I FEATURES • EXTRA LOW Crss N O M J K • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: TetraFET D1020UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 400MHz PUSH–PULL E (4 pls) F I FEATURES • EXTRA LOW Crss N O M J

UT85 COAXIAL CABLE

Abstract: D1020UK storm exe wire UT62-18 UT85 coaxial ut47 EXE18 19/30 S1TW coaxial cable FT50B-43
Contextual Info: TetraFET D1020UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 400MHz PUSH–PULL E (4 pls) F I FEATURES • EXTRA LOW Crss N O M J K • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: TetraFET Illl Illl D1020UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA c_ G typ (2 pis) ► I A P j (2 pis) !A :r (4 pis) j FEATURES V_ □ r A N GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W -28V -400M H z PUSH-PULL .J i > M • EXTRA LOW Crss

N1254

Contextual Info: SANGDEST MICROELECTRONICS SDURB D 1020 Green Products Technical Data Data Sheet N1254, Rev. - SDURB/D1020 ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode

ut47

Abstract: EXE18
Contextual Info: TetraFET D1020UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 400MHz PUSH–PULL E (4 pls) F I FEATURES • EXTRA LOW Crss N O M J K • SIMPLIFIED AMPLIFIER DESIGN

D1020UK

Contextual Info: TetraFET D1020UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 400MHz PUSH–PULL E (4 pls) F I FEATURES • EXTRA LOW Crss N O M J K • SIMPLIFIED AMPLIFIER DESIGN

ADR4525ARZ

Abstract: adr3450 ADR4533BRZ
Contextual Info: Ultralow Noise, High Accuracy Voltage References ADR4520/ADR4525/ADR4530/ADR4533/ADR4540/ADR4550 FEATURES PIN CONFIGURATION ADR4520/ADR4525/ ADR4530/ADR4533/ ADR4540/ADR4550 Maximum temperature coefficient TCVOUT : 2 ppm/°C Output noise (0.1 Hz to 10 Hz)

Acopian Power Supply Model A24H1200

Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
Contextual Info: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5

PT100MF1MP

Abstract: phototransistor sharp
Contextual Info: Under development New product PT100MF1MP Phototransistor Compact, Surface Mount Type Phototransistor Outline Dimensions 0.75 1.5 Unit : mm 1.5 0.4 1 2.2 (1) Compact, thin type(3.0 x 1.5 × 2.2mm) (2) Darlington phototransistor output (3) Surface mount type

PD101SC0SS2

Contextual Info: Under development New product PD101SC0SS2 Photodiode Photodiode for 12x Speed Writing CD-R/RW power monitor Features Outline Dimensions 1 High speed response (Response frequency TYP. 400 MHz) CD-R/RW : 12× speed writing ( 2 ) High sensitivity ( Sensitivity TYP. 0.55 A/W )

Contextual Info: CHAPTER 22 INTERRUPT FUNCTIONS The ¿¿PD784038 is provided with three interrupt request service modes see Table 22-1 . These three service modes can be set as required in the program. However interrupt service by macro service can only be selected for interrupt request

ecg semiconductors master replacement guide

Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei

GA102T1M2MZ

Abstract: light detector opic
Contextual Info: Under development New product GA102T1M2MZ OPIC Light Detector *OPIC Light Detector for 4x Speed Writing DVD-R/RW,+R/RW power monitor Features Outline Dimensions 1 DVD-R/RW,+R/RW : 4× speed writing ( 2 ) OPIC light detector (PIN photodiode and IC onto single device)

m7101

Abstract: hp 2140 circuit diagram of motherboard uli m1573 m1573 m1573 a1 AOS3413 schematic diagram lcd tv sharp inverter ATI-RS480M M1573M keyboard and touchpad schematic
Contextual Info: SERVICE MANUAL FOR 8317 BY: Sinty Zhang Repair Technology Research Department /EDVD Jun.2005 / R01 8317 N/B Maintenance Contents 1. Hardware Engineering Specification ……………………………………………………………………… 4 1.1 Introduction ……………………………………………………………………………………………………………….

12c675

Abstract: 8541P Inventec tpa6017 sc1470I LPC47N249 *8541p L1019 R502 3443 070435FR015
Contextual Info: Approvals Revisions REV ECN NO. Description Of Change DATE DFTG. ENGR. REL. TABLE OF CONTENTS PAGE 4 - CLOCK GENERATOR 5-7 - BANIAS PROCESSOR 8-10 - ODEM 11-14 - DDR 15-18 - ATI_M10_P 19-20 - VGA DDR 21 -LCD INTERFACE 22-24- ICH4-M 25 - HDD CONNECTOR 26 - CD-ROM CONNECTOR

Contextual Info: FEATURES FUNCTIONAL BLOCK DIAGRAM AVDD Low power: 55 mW per channel at 65 MSPS with scalable power options SNR = 75.5 dB to Nyquist SFDR = 91.6 dBc (to Nyquist) DNL = ±0.6 LSB (typical), INL = ±1.1 LSB (typical) Serial LVDS (ANSI-644, default) Low power, reduced signal option (similar to IEEE 1596.3)