D1 37 Search Results

LN536YAMY

Abstract: LN536YKMY LNM436AA01 LNM436KA01
Contextual Info: Numeric Display 3 Digit 14.4mm .6” Series Terminal Connection 28 27 26 25 24 23 22 21 20 19 18 17 16 15 f e a g b D1 d c dp1 D2 dp2 D3 dp3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Assignment 37.5 Anode e1 Cathode d1 Anode d1 3 Common Anode D1 Common Cathode D1

LN536YAMY

Abstract: LN536YKMY LNM436AA01 LNM436KA01
Contextual Info: Numeric Display 3 Digit 14.4mm .6” Series Terminal Connection 28 27 26 25 24 23 22 21 20 19 18 17 16 15 f e a g b D1 d c dp1 D2 dp2 D3 dp3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Assignment 37.5 Anode e1 Cathode d1 Anode d1 3 Common Anode D1 Common Cathode D1

ANSI-644

Abstract: ANSI644 CP-48-13 MO-220-WKKD
Contextual Info: FUNCTIONAL BLOCK DIAGRAM DRVDD 14 VIN+A VIN–A 14 VIN+B DIGITAL SERIALIZER PIPELINE ADC VIN–B RBIAS VREF SERIAL LVDS D0+A D0–A D1+A D1–A SERIAL LVDS D0+B D0–B SERIAL LVDS SERIAL LVDS D1+B D1–B FCO+ FCO– D0+C D0–C D1+C D1–C SERIAL LVDS D0+D

LN536RAMR

Abstract: LN53 LN533GAMG LN533GKMG LN533RAMR LN533RKMR LN536RKMR LNM236AA01 LNM236KA01
Contextual Info: Numeric Display 3 Digit 14.4mm .6” Series Terminal Connection 28 27 26 25 24 23 22 21 20 19 18 17 16 15 f e a g b D1 d c dp1 D2 dp2 D3 dp3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Assignment 37.5 Anode e1 Anode d1 3 Common Anode D1 Common Cathode D1 4 Cathode c1

LN536RKMR

Abstract: LN53 LN533GAMG LN533GKMG LN533RAMR LN533RKMR LN536RAMR LNM236AA01 LNM236KA01 LN536GAMG
Contextual Info: Numeric Display 3 Digit 14.4mm .6” Series Terminal Connection 28 27 26 25 24 23 22 21 20 19 18 17 16 15 f e a g b D1 d c dp1 D2 dp2 D3 dp3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Assignment 37.5 Anode e1 Anode d1 3 Common Anode D1 Common Cathode D1 4 Cathode c1

AP4565GM

Contextual Info: AP4565GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 40V RDS ON 25mΩ

AP4511GM

Abstract: AP4511
Contextual Info: AP4511GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 35V RDS ON 25mΩ

Contextual Info: AP4511GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET  Simple Drive Requirement D2 D1 D2 D1 D1 D1  Low On-resistance  Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 35V RDS ON 25m ID G2

Contextual Info: AP4565GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET  Simple Drive Requirement D2 D1 D2 D1 D1 D1  Low On-resistance  Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 40V RDS ON 25m ID G2

AP4565M

Contextual Info: AP4565M Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 40V RDS ON 25mΩ ID G2 G2 S2 G1 S2 S1 G1

AP4511

Abstract: AP4511M RD18
Contextual Info: AP4511M Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 S2 G1 S2 S1 G1 S1 G2 G2 Description 35V RDS ON

d237m

Abstract: ap4936m
Contextual Info: AP4936M Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D2 ▼ Simple Drive Requirement D1 D1 ▼ Fast Switching BVDSS 25V RDS ON 37mΩ ID 5.8A G2 S2 SO-8 G1 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the

Contextual Info: SSM4565M/GM COMPLEMENTARY N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement N-CH BV DSS D2 D2 D1 D2 D1 D1 D1 Lower gate charge Fast switching characteristic SO-8 40V 25mΩ R DS ON ID G2 G2 S2 G1 S2 S1 G1 S1 7.6A P-CH BVDSS -40V RDS(ON)

49528

Abstract: SI9945 Si9945AEY
Contextual Info: Si9945AEY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V "3.7 0.100 @ VGS = 4.5 V "3.4 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET

Si9945AEY

Contextual Info: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V "3.7 0.100 @ VGS = 4.5 V "3.4 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET

Contextual Info: IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application

SSM9975M

Abstract: SSM99
Contextual Info: SSM9975M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 D2 Lower gate charge D1 D1 Fast switching characteristics S1 60V R DS ON 21mΩ 7.6A ID G2 S2 SO-8 BV DSS G1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the

Contextual Info: IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application

Contextual Info: SSD2011A Dual P-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1 D2 ! Improved High Temperature Reliability

SSD2011A

Contextual Info: SSD2011A Dual P-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1 D2 ! Improved High Temperature Reliability

IRFHS9351

Contextual Info: PD - 97572B IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application

Contextual Info: PD - 97572B IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) T OP VIEW S1 1 D1 6 D1 G2 S2 D1 ID -3.4 (@TC = 25°C) d G1 2 FET 1 D1 D2 5 G2 A D2 D2 3 G1 4 S2 S1 D2 FET 2 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application

MTO-T1-S3-20.100MHZ

Contextual Info: Coils/Delay Lines Chip Coils for High Frequency Wire Wound Type LQWppA Series o LQWppA Series T D2 W L W1 D1 D1 Dimensions mm Part Number L W W1 T D1 D2 LQW04A 0.8±0.05 0.4±0.05 0.4±0.05 0.4±0.05 0.15±0.05 0.06+0.09/-0.03 LQW15A_00 1.0±0.1 0.5±0.1

Zener Z 5

Abstract: FX-D1 FX-D1P fx-a1 FX-mr5 FX-M1P FT-V41 FX-A1P FD-H20-M1 transistor WT4
Contextual Info: SERIES Slim Body Digital/Auto/Manual Setting Fiber Sensor FX-D1/A1/M1 PHOTOELECTRIC SENSORS FX-D1/A1/M1 FX-13 FX-11A Fiber Sensors Simple Operation with Innovative Jog Switch FZ-10 Marked Conforming to EMC Directive CX-20 Simple Operation FX-D1/A1 series Uses an innovative highly operable jog