D1 37 Search Results
D1 37 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
BD137
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JCET Group | NPN transistor in TO-126 package, available as BD135, BD137, or BD139, with collector current up to 1.5 A, collector-emitter voltage from 45 V to 80 V, and DC current gain up to 250. | Original |
D1 37 Price and Stock
Diodes Incorporated ZXLD1370EST16TCIC LED DRIVER CTRLR PWM 16TSSOP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ZXLD1370EST16TC | Cut Tape | 26,483 | 1 |
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ZXLD1370EST16TC | Cut Tape | 478 | 1 |
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ZXLD1370EST16TC | Bulk | 1 |
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ZXLD1370EST16TC | 8 Weeks | 2,500 |
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ZXLD1370EST16TC | 14 Weeks | 2,500 |
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ZXLD1370EST16TC | 49,210 |
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Diodes Incorporated ZXLD1371QESTTCIC LED DRIVER CTRLR PWM 16TSSOP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ZXLD1371QESTTC | Digi-Reel | 5,012 | 1 |
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ZXLD1371QESTTC | Tape & Reel | 7,500 | 12 Weeks | 2,500 |
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ZXLD1371QESTTC | 1 |
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ZXLD1371QESTTC | 12 Weeks | 2,500 |
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ZXLD1371QESTTC | 14 Weeks | 2,500 |
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ZXLD1371QESTTC | 131,500 |
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KOA Speer Electronics Inc RK73G1JTTD1373FRES 137K OHM 1% 1/10W 0603 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RK73G1JTTD1373F | Cut Tape | 3,898 | 1 |
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KOA Speer Electronics Inc RK73H2ATTD1371FRES 1.37K OHM 1% 1/4W 0805 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RK73H2ATTD1371F | Digi-Reel | 3,499 | 1 |
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RK73H2ATTD1371F | Reel | 45,000 | 5,000 |
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RK73H2ATTD1371F | 1,417 |
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KOA Speer Electronics Inc RN73H1JTTD1371B25RES 1.37K OHM 0.1% 1/10W 0603 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RN73H1JTTD1371B25 | Cut Tape | 3,375 | 1 |
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RN73H1JTTD1371B25 | Reel | 5,000 | 5,000 |
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D1 37 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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LN536YAMY
Abstract: LN536YKMY LNM436AA01 LNM436KA01
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LN536YAMY
Abstract: LN536YKMY LNM436AA01 LNM436KA01
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LN536YAMY LN536YKMY LNM436AA01 LNM436KA01 | |
ANSI-644
Abstract: ANSI644 CP-48-13 MO-220-WKKD
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14-Bit, AD9253-EP 48-Lead 02-14-2011-B CP-48-13 CP-48-13 AD9253-EP D11074-0-2/13 ANSI-644 ANSI644 MO-220-WKKD | |
LN536RAMR
Abstract: LN53 LN533GAMG LN533GKMG LN533RAMR LN533RKMR LN536RKMR LNM236AA01 LNM236KA01
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LN536RKMR
Abstract: LN53 LN533GAMG LN533GKMG LN533RAMR LN533RKMR LN536RAMR LNM236AA01 LNM236KA01 LN536GAMG
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LN5366RKMR LN536RKMR LN53 LN533GAMG LN533GKMG LN533RAMR LN533RKMR LN536RAMR LNM236AA01 LNM236KA01 LN536GAMG | |
AP4565GMContextual Info: AP4565GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 40V RDS ON 25mΩ |
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AP4565GM 100us 100ms 135oC/W AP4565GM | |
AP4511GM
Abstract: AP4511
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AP4511GM 100ms 135oC/W AP4511GM AP4511 | |
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Contextual Info: AP4511GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D2 D1 D2 D1 D1 D1 Low On-resistance Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 35V RDS ON 25m ID G2 |
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AP4511GM 100ms 135oC/W | |
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Contextual Info: AP4565GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D2 D1 D2 D1 D1 D1 Low On-resistance Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 40V RDS ON 25m ID G2 |
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AP4565GM 100us 100ms 135oC/W | |
AP4565MContextual Info: AP4565M Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 40V RDS ON 25mΩ ID G2 G2 S2 G1 S2 S1 G1 |
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AP4565M 100us 100ms AP4565M | |
AP4511
Abstract: AP4511M RD18
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AP4511M 100us 100ms 135oC/W AP4511 AP4511M RD18 | |
d237m
Abstract: ap4936m
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AP4936M d237m ap4936m | |
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Contextual Info: SSM4565M/GM COMPLEMENTARY N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement N-CH BV DSS D2 D2 D1 D2 D1 D1 D1 Lower gate charge Fast switching characteristic SO-8 40V 25mΩ R DS ON ID G2 G2 S2 G1 S2 S1 G1 S1 7.6A P-CH BVDSS -40V RDS(ON) |
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SSM4565M/GM SSM4565M | |
49528
Abstract: SI9945 Si9945AEY
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Si9945AEY S-49528--Rev. 28-Oct-97 49528 SI9945 | |
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Si9945AEYContextual Info: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V "3.7 0.100 @ VGS = 4.5 V "3.4 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET |
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Si9945AEY 08-Apr-05 | |
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Contextual Info: IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application |
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IRFHS9351PbF | |
SSM9975M
Abstract: SSM99
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SSM9975M/GM SSM9975M SSM99 | |
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Contextual Info: IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application |
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IRFHS9351PbF IRFHS9351T | |
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Contextual Info: SSD2011A Dual P-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1 D2 ! Improved High Temperature Reliability |
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SSD2011A SSD2011A 12011ATF | |
SSD2011AContextual Info: SSD2011A Dual P-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1 D2 ! Improved High Temperature Reliability |
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SSD2011A SSD2011A | |
IRFHS9351Contextual Info: PD - 97572B IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application |
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97572B IRFHS9351PbF IRFHS9351TRPBF IRFHS9351TR2PBF J-STD-020D IRFHS9351 | |
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Contextual Info: PD - 97572B IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) T OP VIEW S1 1 D1 6 D1 G2 S2 D1 ID -3.4 (@TC = 25°C) d G1 2 FET 1 D1 D2 5 G2 A D2 D2 3 G1 4 S2 S1 D2 FET 2 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application |
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97572B IRFHS9351PbF IRFHS9351TR J-STD-020Dâ | |
MTO-T1-S3-20.100MHZContextual Info: Coils/Delay Lines Chip Coils for High Frequency Wire Wound Type LQWppA Series o LQWppA Series T D2 W L W1 D1 D1 Dimensions mm Part Number L W W1 T D1 D2 LQW04A 0.8±0.05 0.4±0.05 0.4±0.05 0.4±0.05 0.15±0.05 0.06+0.09/-0.03 LQW15A_00 1.0±0.1 0.5±0.1 |
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LQW04A LQW15A LQW18A MTO-T1-S3-20.100MHZ | |
Zener Z 5
Abstract: FX-D1 FX-D1P fx-a1 FX-mr5 FX-M1P FT-V41 FX-A1P FD-H20-M1 transistor WT4
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FX-13 FX-11A FZ-10 CX-20 CX-30 CX-RVM5/D100/ND300R EX-10 12-turn) EX-20 Zener Z 5 FX-D1 FX-D1P fx-a1 FX-mr5 FX-M1P FT-V41 FX-A1P FD-H20-M1 transistor WT4 | |