D032 Search Results

DIP32

Abstract: dip32 package
Contextual Info: PACKAGE DIMENSIONS DIP32 41.9 ± 0.3 17 1 16 14.0 ± 0.3 32 1.27 2.54 GD-D03201H-2 Ver.2004-03-10 15.24 3.3 4.83M AX 0.45 ± 0.1 0.64M IN 1.91 0 to 15° 0.25 ± 0.13 UNIT : mm

1N5148A

Abstract: 1N5139A MIL-STD-750 METHOD 2036 5961-N072 jantx 1n5139a
Contextual Info: 44E D MIL SPECS • G00Q125 D032flhb fi ■ M I L S The documentation and process conversion measures necessary to comply with this revision shall be completed by 93 • ! INCH-POUNO I 2 June MIL-S-19500/383A 2 March 1993 SUPERSEDING MIL-S-19500/383 14 January 1969

nj TRANSISTOR

Abstract: 35 15 rail en 50022 C250
Contextual Info: 3 Interface Relays Interface Relays I1-OC Transistor Output 500mA 1N/O I1-OC Transistor Output (500mA 1N/O) Part No. Rated Voltage (Un) I1-OC-D032R I1-OC-U024R I1-OC-U230R 0.5A/70VDC 0.5A/70VDC 0.5A/70VDC 5…32VDC Coil 24VAC/DC Coil 230VAC/DC Coil Relays with transistor output up to 500 mA / 70 V DC

MSA806

Abstract: msa80 philips Q 522 philips if catv amplifier
Contextual Info: N AMER PHI LI PS/DISCRE TE b^E D • bbSB^l D0325bb GT1 ■ APX P hilips S em iconductors Prelim inary specification Wideband amplifier module OM2082/60 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use

Contextual Info: MA3010K10000000 N-Ch 30V Fast Switching MOSFETs Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage 10s Steady State 30 Units V TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: MA3408Y20000000 N-Ch 30V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: MA2414V10000000 N-Ch 20V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: MA0008J10000000 N-Ch 100V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: MA2419K10000000 P-Ch 20V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: MA2518C10000000 Dual N-Ch 20V Fast Switching MOSFET s Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 4 Rev A.01 D032610 4

Contextual Info: MA2414K10000000 N-Ch 20V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: MA0007G10000000 P-Ch 100V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: MA2410K10000000 N-Ch 20V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: MA3003K10000000 P-Ch 30V Fast Switching MOSFETs Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage 10s Steady State -30 Units V TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: MA3007J10000000 P-Ch 30V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: MA2421K10000000 P-Ch 20V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: MA3002V10000000 N-Ch 30V Fast Switching MOSFETs Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage 10s Steady State 30 Units V TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: MA3002K10000000 N-Ch 30V Fast Switching MOSFETs Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage 10s Steady State 30 Units V TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

PD43256B

Abstract: nec A2C 2C12 PD43256BGU-55L
Contextual Info: N E C ELECTRONICS INC 3ÖE D • b427525 D032121 S * N E C E pPD43256B 32,768 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The pPD43256B Is a 32,768-word by 8-blt static RAM fabricated with advanced slllcon-gate technology. Its

Contextual Info: MA2607C10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage N-Channel P-Channel 20 -20 Units V TXC CORPORATION , All Rights Reserved. 4 Rev A.01 D032610 4

Contextual Info: MA3010J10000000 N-Ch 30V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: MA3403K10000000 P-Ch 30V Fast Switching MOSFETs Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage 10s Steady State -30 Units V TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: MA2401V10000000 P-Ch 20V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: MA2607V10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage N-Channel P-Channel 20 -20 Units V TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610