D02FC Search Results

Contextual Info: B U R R - BROW N ADS802 19-Bit j 10MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • NO MISSING CODES The ADS802 is alow power, monolithic 12-bit, 10MHz analog-to-digital converter utilizing a small geometry CMOS process. This COMPLETE converter includes

Contextual Info: MITSUBISHI MICROCOMPUTERS M 37702E6LXXXFP PROM VERSION of M 37702M 6LX X X FP DESCRIPTION • Single low supply voltage. 2 .7 ~ 5 .5 V The M37702E6LXXXFP is a single-chip microcomputer d e­ • Low power dissipation signed with high-performance C M O S silicon gate technolo­

96-Seg

Contextual Info: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features

Contextual Info: TOSHIBA TC551402T-20/25/30 4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM Description The TC551402J is a 4,194,304 bit high speed CMOS static random access memory that is configurable to an organization of either 4,194,304 words by 1 bit or 1,048,576 words by 4 bits when power is initially applied to the device. The mode x1/x4 is

Contextual Info: B U R R - BROW N ADS802 • & *& *& 12-Bit, 10MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • NO MISSING CODES The ADS802 is a low power, monolithic 12-bit, 10MHz analog-to-digital converter utilizing a small geometry CMOS process. This COMPLETE converter includes

D02fc

Contextual Info: TOSHIBA TC55329AP/AT-15/20/25/35 SILICON GATE CMOS 32,768 WORD x 9 BIT CMOS STATIC RAM Description The TC55329AP/AJ is a 294,912 bit high speed CMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.

m514800

Abstract: D02fc 002B4 S4800 HM514800AJ-7 HM514800AJ-8 HM514800ALRR-7 HM514800ALRR-8 HM514800AZ-7 M514800A
Contextual Info: HM514800A/AL Series HM51S4800A/AL Series Preliminary 5 2 4,28 8-w o rd x 8 -b it D y n a m ic R a n d o m A c c e s s M em ory T he H itach i H M 514800A are C M O S dynam ic R A M o rg a n iz e d as 5 2 4 ,2 8 8 -w o rd x 8 -b it. HM 514800A have realized higher density, higher

shindengen SH

Abstract: 2SJ488 shindengen diode df SHINDENGEN DF-45
Contextual Info: Power 1 . Absolute Maximum Ratings Item Symbol Storage Temperature T st« Channel Temperature Tch Drain-Source Voltage V DSS Gate-Sourse Voltage V GSS Drain Current DC I D (Peak) I DP Source Current (DC) IS Total Power Dissipation 1 P T MOS F E T Specification

D02fc

Abstract: ITE13F06
Contextual Info: Si GE C P L E S S E Y SHM C O N D U C T O R S PRELIMINARY INFORMATION D S 4310 -1.2 IT E 1 3 F 0 6 /IT E 1 3 C 0 6 POWERLINE N-CHANNELIGBT WITH OPTIONAL ULTRAFAST DIODE The ITE13X06 is a robust n-channel, enhancement mode insulated gate bipolar transistor (IGBT designed for

JQC - 3F -1C

Abstract: D02fc DSASL TC8563 hard disk toshiba
Contextual Info: TOSHIBA UC/UP b4E J> • ^0=1724^ Q02b43B 3bS m i O Z 3 HARD DISK CONTROLLER | | TC8561F l TENTATIVE Hard Disk Controller 1. GENERAL DESCRIPTION The T C 8 5 6 1 F (HDC) is a h igh efficiency 108 73 h a rd d isk c o n tro lle r w ith a b u ilt-in d is k controller, sy stem in terface, b u ffe r m em ory