ITE13F06 Search Results

D02fc

Abstract: ITE13F06
Contextual Info: Si GE C P L E S S E Y SHM C O N D U C T O R S PRELIMINARY INFORMATION D S 4310 -1.2 IT E 1 3 F 0 6 /IT E 1 3 C 0 6 POWERLINE N-CHANNELIGBT WITH OPTIONAL ULTRAFAST DIODE The ITE13X06 is a robust n-channel, enhancement mode insulated gate bipolar transistor (IGBT designed for