D0101 Search Results

asus

Abstract: UM6K1N EGA10603V05A1 R0101
Contextual Info: 5 4 EXP_GATE#_R 2 EXP_GATE# 0Ohm 3 2 1 +5VSUS D0101 4 1 1 1 1 R0104 SW0101 D 3 R0102 R0103 330Ohm 330Ohm D GND 1 + D0101 2 2 3 Q0101B UM6K1N 6 4 EXP_GATE_LED_G 5 C Q0101A UM6K1N 2 GND 1 EXP_GATE_LED# WHITE EXP_GATE_LED_GND 100KOhm C LED0102 2 WHITE R0101

raychem heat shrinkable sleeve

Abstract: raychem ad-1319 D-150-0096 D-150-0094 D010122 raychem AD-1377 drawings raychem solder sleeve ANSI-J-STD-004 AD-1377 SHIELD SOLDER SLEEVE
Contextual Info: SPECIFICATION CONTROL DRAWING Product Rev Part Name D-150-0094 B Color Code Yellow D-150-0095 B Yellow D-150-0096 A Red Metal Crimp Splice øB C øA 0.81 0.032 0.56 (0.022) 0.81 (0.032) 0.56 (0.022) 1.35 (0.053) 1.14 (0.045) 2.03 (0.080) 1.91 (0.075) 2.03 (0.080)

8011 f2

Abstract: da 8012 VS8011 VS8022
Contextual Info: VITESSE FEATURES • Serial data: up to 1.25 Gb/s • E C L 100K/10KH compatible parallel data inputs/outputs • Standard E C L power supplies: VEE = -5.2 V ± 0.26 V, Vj j = -2.0 V ± 0.1 V • VS8010: 8 bit Mux/Demux and SONET frame detection and recovery

Contextual Info: HB56U272E Series 2,097,152-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-713A Z Rev. 1.0 Jan. 27, 1997 Description The HB56U272E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Contextual Info: xDSL line driver that features full ADSL central office CO Performance on ±12 V supplies Low power operation ±5 V to ±12 V voltage supply 12.5 mA/amp (typical) total supply current Power reduced keep alive current of 4.5 mA/amp High output voltage and current drive

FME-210B

Abstract: sanken CF35 Sanken catalog
Contextual Info: Schottky Barrier Diode FME-210B April. 2007 •General Description ■Package-TO220F FME-210B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters

sanken power transistor

Abstract: CF35 FMEN-220A sanken DSA0016518 Sanken catalog "Sanken Rectifiers"
Contextual Info: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters

SES14

Abstract: 45418 MCY4 si6334 SC375
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA , MC141535 LCD Segment / Common Driver CMOS M C141535 is a CM O S LC D D river which co nsists of 4 annunciátor out­ puts and 178 high voltage LC D drtvingsignals 17 ro w sa n d 1 6 1 s8 g m e rts . It h as parallel interface capability for operating with general M CU. B esid es

FME-220B

Abstract: CF35 615t
Contextual Info: Schottky Barrier Diode FME-220B April. 2007 •General Description ■Package-TO220F FME-220B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters

RW54

Abstract: B105
Contextual Info: Schottky Barrier Diode RW54 July 2006 •General Description ■Package RW54 is an SBD for the high power current of 5A guarantee. Low forward voltage drop and excellent switching characteristics have been achieved. Φ6.5 axial ■Applications •DC-DC converters

M80C88

Abstract: N80C88 harris 6616 D80C88 412A11 HM-8616 M80C88-2 62C88 80C88A intel 8085 pin assignments
Contextual Info: HARRIS SENICOND SECTOR TS 4305571 D O I Q Ö ^ 0 ~ -p -H I-n -0 7 88008 80C8S HARRIS CMOS 8/16-Bit Microprocessor Features Pinout* • Com patible w ith N M O S 6088 T O P VIEW • D irect Softw are C om patibility w ith 80C 86, 8086, 80C8B M IN MODE • 8-B lt Data bus Interface; 16-B lt Internal Architecture

Contextual Info: a FEATURES High Dynamic Range Output IP3: +28 dBm: Re 50 ⍀ @ 250 MHz Low Noise Figure: 5.9 dB @ 250 MHz Two Gain Versions: AD8350-15: 15 dB AD8350-20: 20 dB –3 dB Bandwidth: 1.0 GHz Single Supply Operation: 5 V to 10 V Supply Current: 28 mA Input/Output Impedance: 200 ⍀

sanken power transistor

Abstract: CF35 SANKEN DIODE 5a schottky axial RW54 B105 10E01 diode ir ALLEGRO MICROSYSTEMS
Contextual Info: Schottky Barrier Diode RW54 July 2006 •General Description ■Package RW54 is an SBD for the high power current of 5A guarantee. Low forward voltage drop and excellent switching characteristics have been achieved. Φ6.5 axial ■Applications •DC-DC converters

BD6127

Abstract: cm capacitor m5e 32C9003 SSI ata controller 32C9003-CGT2 CAPACITOR BD 94-6 AMd 939 pinout BA7106 32c9000
Contextual Info: SSI 32C9003 M m M b t is PC-AT Combo Controller 80 Mbit/s, Dual Bit NRZ Interface 8 A TDK G rou p/C o m p an y Preliminary Data January 1994 DESCRIPTION FEATURES The SSI 32C9003 is an advanced CMOS VLSI device which integrates major portions of the hardware

Contextual Info: V L S I TECHNOLOGY INC b OE D • T3ÔÔ347 0010111 V L S I T ech n o lo g y, inc. T3Ô « V T I 7S_ VP14341 T1XC FEATURES Integrates a full-featured T1 transceiver in a single device with analog circuitry for receiving and transmitting DSX-1 compatible signals and digital circuitry for terminating the duplex DS-1 signal.

E17A

Abstract: dual mixers 77aprvt
Contextual Info: Y@ !! 9h‡hÃTurr‡ QAMP Matching network IAMP LNA LIM LPF FSK DEMODULATOR Dual Mixers LPF FEI Phase Shifter RFOUT PA LIM RSSI BIAS BIT SYNCHRON IZER DIGITAL CONTROL & MODE SPROG XTAL OSC /N TKB VCO tank DCLK DATAIN POR Programmable Synthesizer TKA DATAOUT

30638

Contextual Info: SPECIFICATION CONTROL DRAWING MATERIALS 1. INSULATION SLEEVE: Heat-shrinkable, transparent blue, radiation cross-linked modified polyvinylidene fluoride. APPLICATION 1. This part is designed for insulating unterminated ends of shielding on cables having 24 to 16 AWG conductors.

MIL-STD-1773

Abstract: DDC 61580 BU-65180 BUS-61580 B-3067 HLP-6002 DDC 65170 MIL-STD 1553B cable connector 4BA7 BU-61580
Contextual Info: 000 BU-65170/61580 and BU-61585 ILC DATA. DEVICE CORPORATION _ _ MIL-STD-1553A/B NOTICE 2 RT and BC/RT/MT, ADVANCED COMMUNICATION ENGINE ACE ACE User’s Guide Also Available D E S C R IP T IO N D D C ’s B U -651 70 , B U -6 1 5 8 0 a n d BU-61585 BC/RT/MT Advanced Com­

20EE0007

Abstract: 29A00004 1391406 7025-F50 austrian micro systems e001, 7025 20E0000B 21A00002 Ethernet E168 SA38-0541-01
Contextual Info: RS/6000 7025 F50 Series IBM Service Guide SA38-0541-01 Second Edition February 1998 The following paragraph does not apply to the United Kingdom or any country where such provisions are inconsistent with local law: THIS PUBLICATION IS PROVIDED “AS IS” WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, INCLUDING,

Contextual Info: Schottky Barrier Diode FMEN-220A March, 2006 General Description Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications DC-DC converters

D010171

Contextual Info: AT27C040 Features • • • • • • • • • Fast Read Access Time - 80 ns Low Power CMOS Operation 100 |iA max. Standby 30 mA max. Active at 5 MHz JEDEC Standard Packages 32-Lead 600-mil PDIP 32-Lead 450-mil SOIC SOP 32-Lead PLCC 32-Lead TSOP 5V± 10% Supply

ansi-j-std-006 a solder wire

Abstract: ANSI-J-STD-006 d1413 ANSI-J-STD-004 D-141-30
Contextual Info: SPECIFICATION CONTROL DRAWING MATERIALS 1. INSULATION SLEEVE: Heat-shrinkable, transparent blue, radiation cross-linked polyvinylidene fluoride. 2. SOLDER PREFORM WITH FLUX: SOLDER: TYPE Sn63 per ANSI-J-STD-006. FLUX: TYPE ROL1 per ANSI-J-STD-004. APPLICATION

PD42S16405

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 4 0 5 , 4 2 1 6 4 0 5 16 M-BIT DYNAMIC RAM 4M -W O RD BY 4-BIT, HYPER PAGE MODE EDO D escrip tio n The ¿iPD42S16405,4216405 are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional hyper page mode

AMD2960

Abstract: 2595D IDT39C60B IDT39C60 AM01B IDT39C60A
Contextual Info: INTEGRATED DEVICE SflE D 4025771 QGl[H3fl 034 • IDT IDT39C60 IDT39C60-1 IDT39C60A IDT39C60B 16-BIT CMOS ERROR DETECTION AND CORRECTION UNIT FEATURES • Standard Military Drawing #5962-88613 available for this function • Low-power CEMOS — Military: 100mA max.