D0047 Search Results

2388 jrc

Abstract: jrc 2368 2388 84 JRC 700PE20 900PE20 RS-397 700PE120
Contextual Info: INTERNA TIO NAL RECTIFIER MT dËTJ 4 0 5 5 4 5 2 D004744 Data Sh eet No. PD-3.067 IN T E R N A T IO N A L IOR R E C T IF IE R - T - S S ' - A O 1410A, 1100A RMS Hockey Puk Thyristors 9 0 0 P E , 7 0 0 P E S E R IE S Description The 700PE and 900PE series of converter type hockey puk thyristors

po111

Contextual Info: MICRO POWER SYSTEMS INC LIE ]> • bDT7444 D004770 331 « M P S - „ 5 -1 -\<2>-\ î> MP8795 CMOS Very Low Power 10-Bit Analog-to-Digital Converter Micro Power Systems FEATURES BENEFITS • • • • • • • • • • • • • • • • • 10-Bit Resolution

564-0100-132

Abstract: 564-0700-444 LED 020 564-0100-xxx
Contextual Info: 2öl2b72 D004733 T52 D ialíght LED CBI Circuit Board Indicator Tri Level 564-OxOO-xxx PART NO. LED DATA SHEET COLOR HIGH EFFICIENCY - LED TYPE 01 564-0100-111 564-0100-132 564-0100-222 564-0100-777 R/R/R R/Y/G G/G/G O/O/O 3H D-XXXX LOW CURRENT - LED TYPE 02

din41494

Abstract: 551-0601 551-1301
Contextual Info: E612b7E D00471G 4 SS Dîalîght LED CBï Circuit Board Indicator DIN 41494 Compatible 551 -xx01 PART NO. COLOR LED DATA SHEET HIGH EFFICIENCY 551-0201 551-0301 551-0401 551-2501 Green Yellow Red Orange 3HD -xxxx INTEGRAL RESISTOR, 5V 551-0501 551-0601 551-0701

2SK2758-01L

Abstract: 2U 73 diode
Contextual Info: FU JI 2SK2758-01L,S N-channel MOS-FET FAP-IIS Series > Features - 50 0V 0 ,9 Q 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated T-RA.CK S

ESJA52-12A

Abstract: HIGH VOLTAGE DIODE 12kv 22VZ
Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA52-12A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig. 3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

DIODE 914

Abstract: ESJA53-18A GDD4775
Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA53-18A nade by RJJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

Contextual Info: - i i j i « I W M W A N C E A •VAI OC 1N"£GRATEC C '^ C U 'I S Features A pplications • • • • • • R G B am plifiers Video am plifiers Cable driver T est equipm ent am plifiers C urrent to voltage converters Video broadcast equipm ent O rdering Inform ation

Contextual Info: LSI LOGIC L64281 FFT Video Shift Register FFTSR Preliminary General Description The L64281 is a high-speed Fast Fourier Trans­ form (FFT) video shift register. It is used to per­ form data formatting in real-time FFT systems using the L64280 Fast Fourier Transform Pro­

2D222

Abstract: AB028H1-14 CuMoCu amplifier 6vdc diagram
Contextual Info: EBAlpha 23-30 GHz High Gain Amplifier AB028H1-14 Features • 36 dB Gain 0.470 11.94 mm 0.235 (5.60 mm) ■ +16 dBm Output Power 0.008 (0.20 mm) ■ 3 dB Noise Figure _ ■ Rugged, Reliable Package (11.43 mm) 1 AB028H1-14 ■ Single Voltage Operation 0.024

Contextual Info: SL5500 SL5501 SL5511 , ÛUALITY TECHNOLOGIES CORP 57E D • 74bbô51 0GD4bûT 270 «fiTY OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn phototransistor with accessible base. Plastic envelopes. Suitable for T T L integrated circuits.

METAL FILM RESISTORS PHILIPS

Abstract: 0.25 WATT philips METAL film resistor philips metal film resistor
Contextual Info: Philips Components Product Specification Fusible Metal Film Resistor .33 Watt 5% APPLICATION These resistors have been designed to meet the safety requirements in audio and video applications, in circuits where protection against overloads is needed, e.g.

tv schematic diagram PHILIPS

Contextual Info: 17E PHILIPS E C G INC jj • ^53*120 000474=1 7 m - f - y y - Q - j - Q j ECG1231 TV Sound IF and AF PO Sem iconductors Features • Nominal power output: 4 W at V + =24 V, Ru= 16 Q, dist. = 10%; 2 W at V + =12 V, RL= 8 Q . dist. = 10% • Wide power-supply range:

EIT30

Abstract: 29C93
Contextual Info: T e m ic 29C98 MATRA MHS B-Channel Resynchronizer Description ISDN public networks CENTRAL OFFICES usually implement channel switching except on leased lines. When higher data rates than 64 kbps are required between two terminals or between a terminal and a

Contextual Info: -HYUNDAI H Y 5 1 1 6 1 6 4 B S e r ie s 1Mx 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: SEDI 634 SEDI 634 LOW-POWER 100-BIT LCD COMMON DRIVER • DESCRIPTION The SED1634 is a 100 50 x 2 output dot matrix LCD common (row) driver for driving high-capacity LCD panels at duty cycles higher than 1/64 (up to 1/300). The LSI has a wide range of the LCD driving voltages,

Contextual Info: Preliminary n G zG RETICON ¿'^E HS0512J Fast Framing CCD Imager General Description 1 40 : 13 [ 2 V ID 1 2 [ The HS0512J is a split frame CCD sensor designed specifically for high speed photographic, and high contrast imaging applica­ tions. Its combination of high speed readout with 1000 times

Contextual Info: IB M 1 1 M 4 7 3 0 H IB M 1 1 M 4 7 3 0 H B 4M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Au contacts • Optimized for ECC applications • 4Mx72 Dual Bank Fast Page Mode DIMM • Performance: • System Performance Benefits:

Contextual Info: Preliminary H J ^ RA6464N E B s B R E T IC O Solid State High Speed Image Sensor Array N W Description ® ® ® ® ® ® ® ® ® s ® ® ® The Reticon RA6464N is a very-high-speed PMOS 64 x 64 pixel imaging array. It has 32 parallel outputs that allow

AA028N1-99

Contextual Info: EHAlpha 23-30 GHz Low Noise Amplifier AA028N1-99 Features • 3 dB Noise Figure -0.295 7.49 mm — 0.225 — (5.72 mm) ■ 18 dB Gain i ■ +9 dBm Output Power 0.011 0.022 (0.28 mm) I Ì0.E mm) (0.56 n T l 0.180 (4.57 mm) r ■ Rugged, Reliable Package 0.090 — I

HY5116164B

Abstract: HY5116164BJC wx19
Contextual Info: »HYUNDAI HY5116164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

gl393

Abstract: GL-393 GL-393-A avr shematic GL393A zero crossing detector GL 393
Contextual Info: @ LG Semicon. Co. LTD._ GL393/393A LOW POWER, LOW OFFSET VOLTAGE DUAL COMPARATORS Description Pin Configuration The GL393 consists of two independent precision voltage comparators designed specifically to operate from a single power supply. Operation from split power supplies is also

Contextual Info: 3mm Discrete LED Super Bright Tinted, Clear Dîalight 521-9716, -9717 PART NO. LED COLOR 521-9716 Pure Green 521-9717 Blue MOUNTING CLIP: 515-0006 located on page 4-47 Pure Green Blue -9716 -9717 Power dissipation mW 120 120 Forward Voltage (mA) 30 30 AB SO LUTE M A X IM U M RATING S (T,-25'C )

skfh150

Contextual Info: se MIKRD n V drm tq Itrm s maximum values for continuous operation V rrm (Tv| = 125 °C) 350 A V (is 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 DS 1) Ita v (sin. 180; Tease = 76 °C; 50 Hz) 150 A SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3