D PAK Search Results

BUP213

Abstract: BSS123L6327 BSS123E6327 bup314d IPD06N03LAG BSP170PE6327T BSP315 SPD06N80C3XT BSP295-L6327 BSP129E6327
Contextual Info: Mosfets TO-218AB TO-220AB and TO-220 1-G TO-220FP TO-247 1 G 2 D 3 S 1-G 1-G 2-C 2-D 3-E TO-262 NEW! 3-S D-PAK, D2-PAK and TO-252 D D 2 S 3-S 3 SO-8 Dual G2 S2 1 3-D D2 D2 D 5 3-S 2-D G2 1 D 2 D G1 G 1 D1 4 3 2 2 1 G 6 7 D 8 D D 8 7 D 6 D 2-D 4 D D C 3 2S

Contextual Info: A Heatsinks for D PAK and others B C D – copper heatsinks with excellent heat conductivity – direct mounting on printed circuit through solderable surface – especially suitable for SMD components of type D PAK TO 252 , D² PAK (TO 263), D³ PAK (TO 268), SOT 669 LF PAK,

573300D00010G

Abstract: 7109DG 7106DG
Contextual Info: Surface Mount Heat Sinks For D-PAK, D PAK, D PAK, and SO-10 2 3 RoHS Compliant NEW RoHS Compliant SURFACE MOUNT HEAT SINKS The Aavid Thermalloy line of low profile surface mount heat sinks are suitable for SMT power semiconductor devices in D-PAK, D2 PAK, D 3PAK and SO-10 packages.

573300d00010g

Abstract: 7106d/trg heat sink 7109DG 7106DG 7106d 573400D00010G
Contextual Info: Surface Mount Heat Sinks For D-PAK, D PAK, D PAK, and SO-10 2 3 RoHS Compliant NEW RoHS Compliant SURFACE MOUNT HEAT SINKS The Aavid Thermalloy line of low profile surface mount heat sinks are suitable for SMT power semiconductor devices in D-PAK, D2 PAK, D 3PAK and SO-10 packages.

IRGDDN600M06

Abstract: power mosfet 600v 600A IRGRDN600M06 mosfet 600V 600A circuit
Contextual Info: International S Rectifier Provisional Data Sheet P D -9 .1176 IRGDDN600M06 IRGRDN600MQ6 "SINGLE SWITCH" IGBT DOUBLE -A-PAK Low conduction loss IGBT IR G D D . IR G R D . ? • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"

Contextual Info: RN PAK-8/PAK-51M P08 — 050 H Detail A S = 4 :1 X TiE?Ü D b Plating I ,D = Type D L = Locator Posts —1 No. of Contacts 50 X — D — TG Number of Contacts: — J 50 H = Hermaphroditic — C = Adhesive Suction Cover Blank = No Adhesive Cover A B C D

6484RP

Contextual Info: PRELIMINARY SPACE ELECTRONICS INC. CMOS QUAD RAIL-TO-RAIL I/O OP AMP S PACE PRODUCTS 6484RP V+ IN+A OUT A 1 14 IN- A OUT D IN-A OUT A OUT D IN-D OUT B OUT C IN+C IN- D IN+ A IN+ D 6484RP Rad-Pak V+ V- IN+ B IN+ C IN- B IN- C OUT B IN+D 7 8 OUT C V- IN+B

Contextual Info: SCHOTTKY BARRIER DIODE C20T03QL C 2 0 T 0 3 Q L-11A 20A / 30V F E A TU R ES o lSQUARE-PAKl TO-263AB SMD P a c k a g e d in 2 4 m m T a p e a n d R e el : C 2 0 T - -Q L oT abless TO-220 : C20T-QL-11A o D u a l D io d e s —C a th o d e C o m m o n o L o w F o r w a r d V o lta g e D ro p

si7386

Abstract: SI7386DP-T1-E3 Si7386DP
Contextual Info: Si7386DP New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Gen II Power MOSFET RoHS D PWM Optimized for High Efficiency COMPLIANT D New Low Thermal Resistance Power– PAKr Package with Low 1.07-mm Profile D 100 % Rg Tested

IRFR020

Abstract: IRFR120 international rectifier data book EIA-541 DPAK JEDEC OUTLINE MOSFET dynamic
Contextual Info: PD- 97064 IRFR020 HEXFET Power MOSFET • Dynamic dv/dt Rating • Surface Mount IRFR020 • Available in Tape & Reel • Fast Switching • Ease of Paralleling • Simple Drive Requirements D G D S D-Pak IRFR020 Absolute Maximum Ratings www.irf.com G D S Gate

Contextual Info: Fast Recovery Diodes International IO R Rectifier Fast Recovery Diodes in D-Pak, D 2Pak, TO-220 and TO-247 Packages QUIET/A? Series 600V, 60ns IF ¡AVG: P a c k a g e S ty le V o ita a e G r a d e 200 tO A 10A D -P ak D ?-Pak T O -22 0A C % # H EW F02S 1.1V

Contextual Info: SCHOTTKY BARRIER DIODE C30T06QH C 3 0 T0 6 Q H -11A soA/eov FEATU RES o [SQUARE-PAKl TO-263AB S M D P a c k a g e d in 24m m T a p e an d R e e l : C 3 0 T 0 6 Q H o T a b l e s s T O -2 2 0 : C 3 0 T 0 6 Q H -1 1 A O D u a l D io d es - C a th o d e C om m on

Contextual Info: PD- 97064 IRFR020 HEXFET Power MOSFET • Dynamic dv/dt Rating • Surface Mount IRFR020 • Available in Tape & Reel • Fast Switching • Ease of Paralleling • Simple Drive Requirements D G D S D-Pak IRFR020 Absolute Maximum Ratings G D S Gate Drain Source

vishay MOSFET code marking

Abstract: IRFR020 EIA-541 IRFR120
Contextual Info: PD- 97064 IRFR020 HEXFET Power MOSFET • Dynamic dv/dt Rating • Surface Mount IRFR020 • Available in Tape & Reel • Fast Switching • Ease of Paralleling • Simple Drive Requirements D G D S D-Pak IRFR020 Absolute Maximum Ratings G D S Gate Drain Source

54LVTH373

Abstract: SN54LVT16373
Contextual Info: J P relim in a ry Radiation H a r d e n e d 54LVTH373RP Technology For Space Applications F S e I ’s 54LVT16373RP RP forRAD-PAK 16bit transparent D-type latch features aminimum 1Q1 100 Idlorad (Si) total dose tolerance. Using SEI's ra d ia tio n hardened

Contextual Info: IRF614S A d v a n c e d Power MOSFET FEATURES B ^D S S - ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology 00 evi Q II ♦ Lower Input Capacitance 250 V 2.0 Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK

Contextual Info: IRLR8729PbF-1 HEXFET Power MOSFET VDS 30 V 8.9 mΩ 10 nC D D RDS on max (@VGS = 10V) Q g (typical) f ID 58 (@TC = 25°C) S G G A D-Pak IRLR8729PbF-1 S Features Benefits Industry-standard pinout D-Pak and I-Pak Compatible with Existing Surface Mount Techniques

FK 244 13 D2 PAK

Abstract: Heatsinks D-PAK TO-268 IC A 244 FK 330 lf 244 so-10 sot 669 aluminium profile
Contextual Info: Hola1 H A H Heatsinks for D PAK and others B C – copper heatsinks with excellent heat conductivity – direct mounting on printed circuit through solderable surface – especially suitable for SMD components of type D PAK TO 252 , D² PAK (TO 263), D³ PAK (TO 268), SOT 669 LF PAK,

Contextual Info: IRFW/I614A A d v a n c e d Power MOSFET FEATURES B ^D S S 250 V - ♦ Avalanche Rugged Technology 2.0 Q ^ D S o n = ♦ Rugged Gate Oxide Technology 00 evi Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK

Carrier tape for TO263 package

Abstract: 16101
Contextual Info: Package Information TO263 DD2-PAK Outline Dimensions 3-pin TO263 Outline Dimensions A E L 2 E 1 C 2 D 1 2 D 1 L 3 L 3 L 4 0 ~ 5 L 1 A A e Symbol B B 2 D e ta il A E 2 C Z D e ta il A ( R o ta te d 9 0 ) Dimensions in mil Min. Nom. Max. A 170 ¾ 185 B 28

Contextual Info: D im e n sio n s in Milimeters » E lz SS 11 11 817 ELECTRONICS D im e n sio n s in Milimeters T0-3P 1) ss SOT-23 818 ELECTRONICS D im e n sio n s in Milimeters D-PAK l-PAK 819 ELECTRONICS D im e n sio n s in Milimeters 8-DIP-300 8 5 n n n n o u u u Í •1

Contextual Info: International Hü Rectifier Provisional D ata S h eet P D -9 .1 193 IRGTIN100K06 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE - 600V lc = 100A Vce O N <2.7V • R u g g e d D esig n tsc> 10ps •S im p le g a te -d riv e •S w itc h in g -L o s s R atin g inclu des all "tail"

Contextual Info: IRF820S A d van ced Power MOSFET FEATURES B ^D S S 500 V - ♦ Avalanche Rugged Technology 3.0Q r\D a II ♦ Lower Input Capacitance cn ^ D S o n = ♦ Rugged Gate Oxide Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V

Contextual Info: IRLR8721PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Q g (typical) 30 V 8.4 mΩ 8.5 nC f ID 65 (@TC = 25°C) D D S G G A D-Pak IRLR8721PbF-1 S Features Benefits Industry-standard pinout D-Pak Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free