SI7386 Search Results

Si7386DP

Abstract: SI7386DP-T1-GE3 Si7386DP-T1-E3
Contextual Info: Si7386DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 19 0.0095 at VGS = 4.5 V 17 Qg (Typ.) 11.5 • • • • Halogen-free available TrenchFET Gen II Power MOSFET

Contextual Info: Si7386DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 19 0.0095 at VGS = 4.5 V 17 Qg (Typ.) 11.5 • • • • Halogen-free available TrenchFET Gen II Power MOSFET

Contextual Info: Si7386DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 19 0.0095 at VGS = 4.5 V 17 Qg (Typ.) 11.5 • • • • Halogen-free available TrenchFET Gen II Power MOSFET

Contextual Info: Si7386DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 19 0.0095 at VGS = 4.5 V 17 Qg (Typ.) 11.5 • • • • Halogen-free available TrenchFET Gen II Power MOSFET

Contextual Info: Si7386DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 19 0.0095 at VGS = 4.5 V 17 Qg (Typ.) 11.5 • • • • Halogen-free available TrenchFET Gen II Power MOSFET

Si7386DP

Contextual Info: SPICE Device Model Si7386DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SPICE Device Model Si7386ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Si7386ADP

Contextual Info: SPICE Device Model Si7386ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Si7386DP

Abstract: Si7386DP-T1-E3 Si7386DP-T1-GE3
Contextual Info: Si7386DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 19 0.0095 at VGS = 4.5 V 17 Qg (Typ.) 11.5 • • • • Halogen-free available TrenchFET Gen II Power MOSFET

73145

Abstract: Si7386DP
Contextual Info: SPICE Device Model Si7386DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

si7386

Abstract: SI7386DP-T1-E3 Si7386DP
Contextual Info: Si7386DP New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Gen II Power MOSFET RoHS D PWM Optimized for High Efficiency COMPLIANT D New Low Thermal Resistance Power– PAKr Package with Low 1.07-mm Profile D 100 % Rg Tested

3203 MOSFET

Abstract: AN609 Si7386DP
Contextual Info: Si7386DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

2576-5

Abstract: 4139 temperature AN609
Contextual Info: Si7386ADP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

so-8 vishay weight

Abstract: land pattern for ppak
Contextual Info: Si7386DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 19 0.0095 at VGS = 4.5 V 17 Qg (Typ.) 11.5 • • • • Halogen-free available TrenchFET Gen II Power MOSFET

48V SMPS

Abstract: smps 12v 1W HB LED TIGER TRIAC triac dimmer LED mr16 4060 TRIAC LM3423 cd 6283 cs lm 7404 LM3409
Contextual Info: 針對高亮度照明系統的 LED 驅動器 national.com/LED 產品彙集 2009 第二冊 Temp Sensor PWM Dimming Signal MCU 3.3V 48V 一般照明系統 LED 驅動器 技術概要 產品亮點 高亮度 LED 應用 設計實例 技術文章 AC/DC LED Driver

1W HB LED

Abstract: 90V, 350mA LED driver luminus datasheet PAR38 Q5 LED 12vdc 350ma led driver circuit LM3404HV LEDMR16 LM5002 LM3401
Contextual Info: 高輝度ライティング向けLED ドライバ ソリューション・ガイド national.com/JPN/led 2009年 Vol. 1 一般照明用LED ドライバ 技術概要 製品概要 設計例 記事 Temp Sensor PWM Dimming Signal MCU 3.3V 48V アプリケーション情報

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Contextual Info: User's Guide SNVA461A – September 2011 – Revised April 2013 AN-2094 LM3481 SEPIC Evaluation Board 1 Introduction The LM3481 SEPIC evaluation board is designed to provide the design engineer with a fully functional power converter solution with two output voltage options. It produces a selectable output voltage of 12 V

12 VAC MR16 LED Circuit

Abstract: LM3414 dimmer MR16 SCHEMATIC simple dimmer mosfet pwm LM3409 various PWM techniques for triac Light Dimmer 800 watt with Schematic LM3404HV 150 Amps dimmer module 5 led white drl
Contextual Info: LED Drivers for High-Brightness Lighting Solutions Guide national.com/LED 2010 Vol. 1 Temp Sensor PWM Dimming Signal MCU 3.3V 48V Technology Overview Product Highlights Application Information Design Examples Articles AC/DC LED Driver LED Driver LED Driver

Contextual Info: LM3434 LM3434 Common Anode Capable High Brightness LED Driver with High Frequency Dimming Literature Number: SNVS619A LM3434 Common Anode Capable High Brightness LED Driver with High Frequency Dimming General Description Features The LM3434 is an adaptive constant on-time DC/DC buck

Si4830

Abstract: Fast Switching mosfet SI3433B smd diode 615
Contextual Info: Notebook Table of Contents POWER MANAGEMENT, Charger Power. 3 POWER MANAGEMENT, CPU Power. 6