D 823 TRANSISTOR Search Results

Fdd spindle motor circuit 300

Abstract: panasonic servo motor AC Motor Speed Controller AX 1668 F 24 pin Fdd spindle motor circuit RPM 777 AN8235S D012 AC motor current limiter panasonic ac servo motor
Contextual Info: Panasonic ICs for Motor AN8235S 3.5-inch FDD Spindle Motor Controller • Overview Unii I mm T h e A N 823 5S is an 1C developed for controlling the 3.5-inch F D D s' belt type spindle motors. Using the digital FG servo system, it can easilly realize adjustment-free

AC motor current limiter

Abstract: 300rpm 6v dc motor panasonic ac servo motor AX 1668 F Fdd spindle motor circuit 300 high rpm 5V dc motors AX 1668 F 24 pin 132F AN8235S D012
Contextual Info: Panasonic ICs for Motor AN8235S 3.5-inch FDD Spindle Motor Controller • Overview Unii I mm T h e A N 823 5S is an 1C developed for controlling the 3.5-inch F D D s' belt type spindle motors. Using the digital FG servo system, it can easilly realize adjustment-free

1rf830

Abstract: 1rf840 RF822 IRFB40R IRF820R IRF830R J50 mosfet IRFS30 RF842 IRF820
Contextual Info: HLAJRRIS IRF820/82 i/822/823 IRF820R/821R/822R/823R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Fea tu res Package T 0 -2 2 0 A B TOP VIEW • 2.2 and 2.5A, 450V - 500V • f D S !0 0 = 3 -0 i l an d DRAIN FLAN GE) • Single Pulse Avalanche Energy Rated*

D 823 transistor

Abstract: transistor IRF 450 821 transistor transistor D 822 P irf transistors transistor irf 500 transistor D 822 ON 823 823FI irf822f
Contextual Info: rz7 SGS-THOMSON [ÜD g»iIL[l RDD(gi IRF 820/FI-821/FI IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRF820 IRF820FI 500 V 500 V 3.0 3.0 IRF821 IRF821FI 450 V 450 V 3.0 3.0 IRF822 IRF822FI 500 V 500 V 4.0 4.0 IRF823 IRF823FI

N 821 Diode

Abstract: transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821
Contextual Info: rz 7 A 7#. SCS-THOMSON IRF 820/FI-821/FI mnmglliigmiBiMnigi_ IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS RdS OI1 IRF820 IRF820FI 500 V 500 V 3.0 ß 3.0 ß IRF821 IRF821FI 450 V 450 V 3.0 ß 3.0 n 2.5 A 2.0 A IRF822

ts 4052

Abstract: 2sc 5241
Contextual Info: High Speed Switching Transistors FX series B ipolar transistors NPN ITO-220 TO -220 A bsolute M axim um Ratings VcEO V ebo Ic [V] [V] [A] 2SC4051 4052 Type No. E lectrical C haracteristics VcE V cE O IlFE (min) V be d jc (sat) (sat) (m ax) (m ax) (max) ton

D 823 transistor

Abstract: BF56 BF821S
Contextual Info: TELEFUNKEN ELECTRONIC 17E » • a'lSDQ^b 0 0 0 ^ 2 3 IALGG BF 821 S BF 823 S TTllUlFüiKIKIKI electronic C rM tM "ftchrtotoQtes Silicon PNP Epitaxial Planar Transistors A p p lica tio n s: For telephone sets, telecommunication circuits, hybrid circuits, video-B-class power

Contextual Info: High Voltage • High Speed Switching Transistore HFX series ITO-220 MTO-3P TO-220 Bipolar transistors NPN Electrica Characteristics Absolute Maximum Ratings V cE O hFE ton V cE V be 0jc fr ts tf (sat) (sat) (min) (max) (max) (max) (typ) (max) (max) (max)

55TI

Contextual Info: High Voltage* High Speed Switching Transistors H F X series IT 0 - 2 2 0 T O -220 Bipolar transistors N PN Type No. Absolute Maximum Ratings Electrical C haracteristics V ceo E IA J h FE VcE V be (min) (sat) (max) [V ] (sat) (max) d\G VcBO VCEO V ebo lo

D 823 transistor

Abstract: transistor IRF 450 821 transistor irf transistors irf821 IRF820 IRF820FI IRF821FI IRF822 IRF822FI
Contextual Info: 30E D M 7cj5ci237 OQETflQ? 0 • ¿ Z T SGS-THOMSON ^7# RiöD [S IiIL[l©¥ S®Rflö©i S 6 S-THOMSON TYPE IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI Voss 500 V 500 V 450 V 450 V 500 V 500 V 450 V 450 V ^DS(on 3.0 n 3.0 fi 3.0 fi

transistor 123 DL

Abstract: TRANSISTOR 8FB a406 transistor A7N transistor
Contextual Info: AOL1444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1444 uses advanced trench technology to provide excellent R DS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power

transistor a7n

Abstract: DIODE A7N A7N transistor 1df diode transistor 123 DL
Contextual Info: AOL1408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1408 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power

Contextual Info: W79E825/824/823/822 Data Sheet 8-BIT MICROCONTROLLER Table of Contents1 2 3 4 5 6 7 8 9 10 11 GENERAL DESCRIPTION . 4 FEATURES . 5

W79E825ADG

Abstract: W79E825 w79e824adg W79E822BDG
Contextual Info: W79E825/824/823/822 Data Sheet 8-BIT MICROCONTROLLER Table of Contents1 2 3 4 5 6 GENERAL DESCRIPTION . 4 FEATURES . 5

822 sop20

Contextual Info: W79E825/824/823/822 Data Sheet 8-BIT MICROCONTROLLER Table of Contents1 2 3 4 5 6 GENERAL DESCRIPTION . 4 FEATURES . 5

D 823 transistor

Abstract: 821 transistor
Contextual Info: UMC3N/FMC3A h 7 > V ^ ^ /Transistors UMC3N FMC3A r :a.77il/$ —J\/ K K ‘7 > v ^ ^ / D u a l Mini-Mold Transistor PNP/NPN '> U = I> h 7 > y ^ $ Epitaxial Planar PNP/NPN Silicon Transistor Z .'f y ^- i&/Switching Circuit • #i-ff$~$>£!E/Dimensions U n it: mm

Contextual Info: 32E D • ISIP Ô23b320 001724b S S M B T 4126 PNP Silicon Sw itching Transistor SIEMENS/ SPCL-, SEMICONDS _ T - 3 7 - I5 " High current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Type M arking Ordering code for ve rsio ns in bulk Ordering code for

Contextual Info: Darlington Transistors D a rlin g to n P o w e r T r a n s is to r s Bipolar transistors T ype No. E IA J Absolute Maximum Ratings Electrical Characteristics VCBO VOEO V ebo lo Ib Pt Tstg Tj sus (min) [V ] [V ] [V ] [A ] [A ] [W ] [•c] [•c] [V ] 100

Contextual Info: CZT31C CZT32C Central" NPN PNP Semiconductor Corp. SURFACE MOUNT 2.0W COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT31C and CZT32C types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for sur­

JRF820

Abstract: F820R
Contextual Info: 2 3 H A R R IS IR F 820/ 821/ 822/823 IR F 820 R /8 2 1R /822 R /823 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Features Package T O -2 2 0 A B TOP VIEW • 2 .2 and 2.5A , 4 5 0 V - 5 0 0 V • rD S ° n = 3.on and 4 .0 ÎÎ DRAIN

npn transistor w16

Abstract: 1608B 2SC3590
Contextual Info: SANYO SEMICONDUCTOR 15E CORP D • 1 7 cH?D7f ci 0004404 T'33~U 2SC3590 201OA NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Horizontal Deflection Output Applications Features . Fast switching speed. , Low saturation voltage. . Adoption of MBIT process.

marking code nt amplifier

Abstract: D 823 transistor
Contextual Info: Central" CJD31C NPN CJD32C PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DRÂKI! DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package

2SB113

Abstract: 2SD1665
Contextual Info: 2SD1665M/2SD1857 Is ~7 > V 7s £ /Transistors x 2 S D 1 6 6 2 S D 1 8 5 5 M e ^ # ' > 7 ^ 7 V - ^ N P N '> • ; = ] > h Epitaxal Planar N PN Silicon Transistors /Medium Power Amp. 7 • • JF^Tj-;i[2|/Dimensions Unit : mm 1) raifi/3: X ' $> -5 o B V c e o = 120V

2SC2120

Abstract: 2sC2120 transistor Audio Power Amplifier TOSHIBA 2SC2120-Y 2SC2120-O 2SC2120-0 2SA950 2SC2120 0 transistor 2sc2120 ic 824 J
Contextual Info: J D > N P N I^ ICON o NPN 9 5/ 7 ^ 5 JW B h EPITAXIAL > 9 ^ TRANSISTOR r % P C T B S C (P C T PROCESS 2SC 2120 A udio Pow er A m p l if i e r A p p l i c a t i o n s V* : hpBj = 100~ -320 2SA950 ¿ a y / J / y i i J K i N t o 1W O u t p u t A p p l i c a t i o n s