D 727 TRANSISTOR Search Results

4 pin dual-emitter

Abstract: dual-emitter BFQ741 UBC869 philips MATV amplifiers
Contextual Info: Objective specification Philips Semiconductors y NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES 5L.E D ' 3 3 -0 5 BFQ741 WM 7110flEb OOMSbflO 727 • P H I N PINNING • Low distortion DESCRIPTION PIN • Gold metallization ensures excellent reliability

D-621-EE

Abstract: D-621-GE BROWN BOVERI brown Boveri diode D-621-EC D-621-GB BROWN BOVERI protection D-621-GC diode brown boveri 621GB
Contextual Info: -FMC BBC BROWN BOVERI Silicon Power Rectifiers Fast switching B R O W N , B O V E R I & C IE A K T IE N G E S E L L S C H A F T M A N N H E IM G eschäftsbereich H albleiter und S trom rich te r Telefon 06206 503-1, T elex 0 4 -6 5 727 Postfach 200, D -6840 Lam pertheim

Boveri voltage regulator

Abstract: brown Boveri diode DIODE BBC diode 628 bbc DIODE Transistor ge 718 DIODE BBC D BROWN BOVERI D-628-GC D-628-EB
Contextual Info: -FMC BBC BROWN BOVERI Silicon Power Rectifiers Fast switching B R O W N , B O V E R I & C IE A K T IE N G E S E L L S C H A F T M A N N H E IM G eschäftsbereich H albleiter und S trom rich te r Telefon 0620(3 5 0 3-1 , T e le x 0 4 -6 5 727 Postfach 200, D -6840 Lam pertheim

ic 7465

Abstract: HT3020B D 727 Transistor 7465 HT3020A HT3020C HT3020D Rhythm Percussion Generator CMOS drum generator
Contextual Info: HT3020A/B/C/D One Rhythm Generator Features • • • • Operating Voltage: 2.4V~5.0V Directly drive an external transistor Low stand-by current One percussion instrument • • • One demo song End-pulse output 16 pin dual-in-line package • Sound effect generators

bcw 94 b

Abstract: BF-139 F 540 NS BSY54 BCW95B BSY55
Contextual Info: CB 76 (CB 6} (CB 7) Silicon NPN transistors, general purpose (continued) Tamb= 25 °C Transistors N P N silicium , usage générai (suite) (mW) VCEO (V) h21 E VCER* h21E V c E X a min max F 139 Bc F 139 B<> F 139 B TO 18 TO 18 540 540 540 330 330 40 60 60

CMOS drum generator

Abstract: HT3020D 7465 holtek drum
Contextual Info: HOLTEK r r HT3020A/B/C/D One Rhythm Generator Features • • • • Operating Voltage: 2.4V~5.0V Directly drive an external transistor Low stand-by current One percussion instrument • • • One demo song End-pulse output 16 pin dual-in-line package

Contextual Info: User’s Manual 16 R8C/34W Group, R8C/34X Group, R8C/34Y Group, R8C/34Z Group User’s Manual: Hardware RENESAS MCU R8C Family / R8C/3x Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

hengstler 890 manual

Abstract: hengstler 890 hengstler 890 counter hengstler, 890 signo 727 Hengstler relay 890 Hengstler Hengstler counter 890 signo 727 operation manual Hengstler counter
Contextual Info: Betriebsanleitung Operating instructions signo 727.1 Positionsanzeige mit/ohne Grenzwerte Position-Indicator with/without limit values Inhaltsverzeichnis Contents 1. 2. 2.1. 2.2. 2.2.1 2.2.2 2.3. 3. 3.1. 3.2. 3.3. 4. 4.1 4.2 4.3 4.4 5. 6. 7. 7.1. 7.2. 7.3

bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K

2SC1892

Abstract: E JHAA AC42C
Contextual Info: 2/ U D > N P N = « f f i l b « . W h 5 > 2; ^ SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR O * ?- y V o Color TV Horizontal Outp u t A p p l ications • A 2 SC 1892 V CB 0 = 1 5 0 0 V • V cœ eat = 5 V (Typ.) ; -X -í y ; l&ZfcÆfè MAXIMUM RATINGS CHARACTERISTIC

BFW61

Contextual Info: BFW61 J V N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers. QUICK REFERENCE DATA

Contextual Info: Ordering num ber:EN 2 4 3 0 2SD1883 NPN Triple Diffused Planar Silicon Transistor SAiYO Color TV Horizontal Deflection , Output Applications i Applications . Color TV horizontal deflection output . Color display horizontal deflection output Features . High speed tf=100ns

Contextual Info: Power Transistors 2SD1457, 2SD1457A 2SD1457, 2SD1457A Silicon NPN Triple-Diffused Planar Darlington Type Power A m plifier • Features • High DC current gain Iif e • High collector-base voltage (V cbo ) • “Full Pack” package for simplified mounting on a heat sink with one

GSO 69

Contextual Info: bbSB^ai 0023^74 6RD * A P X N AMER PHILIPS/ DISCRE TE b?E ]> BST110 yv P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.

Contextual Info: ERICSSON ^ PTB 20053 60 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20053 is a class AB, NPN, common emitter R F power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 60 watts minimum output power, it may be used for both CW and P E P

727 Transistor power values

Contextual Info: SIEMENS BCR191S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package »Built in bias resistor (R1=22kß, R2=22kfl) Type BCR191S Marking Ordering Code Pin Configuration

BST60

Abstract: BST50
Contextual Info: BST50 BST51 BST52 J V N-P-N SILICON PLANAR DARLINGTON TRANSISTORS Silicon n-p-n planar Darlington transistors fo r industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a m icrom iniature SOT-89 package. P-N-P complements are BST60, 6 1 ,6 2 respectively.

Contextual Info: _ • /= T ^ 7 # 7 g g I B 37 0 0 5 5 ^ 7 3 I ■ _ S G S -T H O M S O N ^D g^ [llLlCTi©lMia©i S G S-THOMSON BUX42 3GE D HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESC RIPTIO N The BUX42 is a silicon multiepitaxial planar NPN

2SK1407

Contextual Info: ROHM CO LTD 4DE D • 7 0 2 f l cm OGQhMMb 2 B R H M h 7 > v X £ /Transistors 2SK1407 ‘ 2SSC1407 Low Noise High Electron Mobility Transistor • 2SK1407 i , ~ 7 ^3 / ~ 2 S ' \f iiH /D im e n s io n s (Unit: mm M BE (Molecular Beam Epitaxy) H E M T T -fo

sc08820

Contextual Info: f Z 7 SGS-THOMSON ^ 7# « E g m iO T a ! ! ! ! _B U W 3 8 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH CURRENT CAPABILITY . VERY LOW SATURATION VOLTAGE AT le =20A . FAST TURN-ON AND TURN-OFF . HIGH FREQUENCY AND EFFICIENCY

2SD1957

Contextual Info: 2SD1957 /Transistors HS&fj*7°U-/^NPN yi j 3>h7>y^$ 2SD1957 Freq . Power A m p. • 1 B E h F E V>M V; V sjl tt Triple Diffused Planar N P N S ilico n Transistor Dimensions Unit: mm) : hFE = 300 (Typ.)o 2) V ce (sat) VcE (sat)=0.2V (Typ.) M, A V I 0 05 to

VHF-UHF Band Low Noise Amplifier

Abstract: 2SC5322
Contextual Info: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain : Ga = 10dB (f=2GHz)

Contextual Info: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • ,0.8 ± 0 . 1, r— r - i Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain