D 6 / 1400 Search Results

T-OT-27

Abstract: EUPEC km 17
Contextual Info: D60N 7 ~ 0 1 - 3 . 1 D60NR EUPEC 52E D • anaBsi? oaaoöflfi 33o ■ upec Typen reihe/Type range_ D 6 0 N / D 6 0 N R _ 400 _800_ 1200_ 1400_ 1600 Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte

Contextual Info: Fast Recovery Epitaxial Diodes FRED U , = 8 - 582 A V Type RRM 1 @ T1c 'FAV U rms vF *FSM 10 m s @ t rr 'f m a x. 4 5 °C Irm @ -d i/d t typ. T vjm = 1 5 0 °C V A V A °C ^"v JM A ► D S E I 6 -0 6 A S 600 6 125 16 65 1.3 8 35 2.5 D S E I 8 -0 6 A D S E I 8 -0 6 A S

E-2507A

Abstract: EI-33-1 EI33 ET2910A E-4215A ER39 EF2509 RM0600B ET4415A E2507A
Contextual Info: Soft Ferrites Power Applications Switch Mode Power Supply Fig. 5 Fig. 6 b d b d Fig. 7 Fig. 8 h2 = = c a g ha gha g h a c d b i d3 d2 b f c j c = = h1 e E Cores See Fig. 5 5 5 5 5 5 See Fig. 6 6 6 6 P/N ETD cores ET2910A ET3411A ET3913A ET4415A ET4916A ET5419A

PC3200R-30331-C0

Abstract: HYS72D128300GBR-5-B HYS72D256220GBR-5-B PC2700R-25330-D0 HYS72D128300HBR-6-B pc2100r 25330 z DDR400 DDR400B HYS72D64301 pc2700r-25330-c0
Contextual Info: January 2007 HYS72D64301[G/H]BR–[5/6]–B HYS72D128xxx[G/H]BR–[5/6/7]–B HYS72D256220[G/H]BR–[5/6/7]–B HYS72D256320[G/H]BR–[5/6/7]–B 1 8 4 - P i n R e g i s t e r e d D o u bl e - D a t a - R a t e S D R A M M o d u l e DDR SDRAM RoHS Compliant Products

PC2700R-25331

Abstract: PC2700R-25331-C0 4070 data sheet cmos 4070 TFBGA 117-pin DDR400 DDR400B HYS72D64301HBR HYS72D256920HBR HYS72D128300HBR-5-C
Contextual Info: Aug. 2006 HYS72D 64301H B R– [ 5 / 6 ] – C HYS72D128x00HBR–[5/6]–C HYS72D 128321 H BR– [ 5 / 6 ] – C HYS72D256x20HBR–[5/6]–C 1 8 4 - P i n R e g i s t e r e d D o u b l e - D a t a - R a t e SD R A M M o d u l e RDIMM DDR SDRAM RoHS Compliant

ISO 8015

Abstract: HYS72D128300HBR-5-C PC2700R-25331 TFBGA 117-pin 6n25 cmos 4070 PC2700R-25331-F0 HYS72D64301HBR-5-C DDR400 HYS72D64301HBR
Contextual Info: August 2007 HYS72D 64301H B R– [ 5 / 6 ] – C HYS72D 128300 H BR– [ 5 / 6 ] – C HYS72D 128321 H BR– [ 5 / 6 ] – C HYS72D256x20HBR–[5/6]–C 1 8 4 - P i n R e g i s t e r e d D o u b l e - D a t a - R a t e SD R A M M o d u l e RDIMM DDR SDRAM

n channel mosfet 1400 v

Abstract: FS20SM6
Contextual Info: MITSUBISHI Neh POWER MOSFET FS20SM-6 HIGH-SPEED SWITCHING USE FS20SM-6 OUTLINE DRAWING D im ension s in mm 4.5 • V dss .300V .0.26Q • I d . 20 A

tic 32a

Abstract: V48A
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 312 OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 64 GRAY SCALES T h e ¿¡PD16 6 3 6 is a s o u rc e d riv e r fo r T F T -L C D s ca p a b le of d e a lin g w ith d is p la y s w ith 6 4 g ra y sca le s. D ata in p u t

FK20KM6

Contextual Info: MITSUBISHI Neh POWER MOSFET FK20KM-6 HIGH-SPEED SWITCHING USE FK20KM-6 • v d s s •300V . • rDS ON (MAX) ■0.33Q • I d . ■■■ 20A • V iso. 2000V

T2 WICKMANN FUSE

Abstract: FUSE T 160mA wickmann 275 Wickmann USA
Contextual Info: MINIATURE FUSES WICKMANN ag m L 5m e Series 241 10 Indicator Fuse 0 ,0 2m Tim x 5 diu 00 DIN 41 576, T.2 Tim e-current characteristics M in -M a x L im its Me D IN 4 1 5 7 6 , T .2 (8 0 . 1 0 0 m A ) D IN 4 1 5 7 6 , T .2 (1 2 5 m A .1 .2 5 A ) D IN 4 1 5 7 6 , T .2 (1 .6 0 . 6 .3 0 A )

40C1500

Abstract: T1200 T1200N T1209N k005
Contextual Info: E G-AKTIENGESELLSCHAFT SIC D • QDSTmS D00b513 □ M A E 6 6 p T 1200 N T 1209 N Typ enreihe/Type range T1200N 1200 1400 1600 1800 _T 1 2 0 9 N

Contextual Info: HERRNANN 4SE KG D • M 4 3 b5 7S QQQ0CH3 T ■ HRMN T-*>l~X3 Schnelle Dioden Fast Switching Diodes Diodes rapides 15 1500 HDS 235/07 - 6 700 12 1200 15 1500 HDS 240/11 - 6 1100 14 1400 16 1600 HDS 280/11 -6 1100 15 1500 20 2000 HDS 350/20 -6 2000 22 2200

d3s diode

Abstract: diode d2s RECTIFIER DIODES
Contextual Info: Low power diodes Rectifier diodes blE D eupec Type Vrrm 34G3ET7 Ifsm D0[]135G 7^5 M U P E C O utline Ifavm trr tvj max A A IS °c 400 800 160 3 - 150 104 D 6 / 400 800 1200 1400 1600 100 6 150 106 Type V V br If s m t = 10 ms tvj = V i max V D 3 / Controlled avalanche diodes

68000l8

Abstract: 68000L12
Contextual Info: H D 6 8 0 0 0 HD68000-4. HD68000-6, HD68000-& HD68000-ia HD68000-12 H D 6 8 0 0 0 Y (HD68000Y4, HD68000Y6, HD68000Y8. H068000Y10. HD68000Y12) MPU (Micro Processing Unit) Advances in semiconductor technology have provided the capability to place on a single silicon chip a microprocessor at

Si6410DQ

Contextual Info: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.014 @ VGS = 10 V "7.8 0.021 @ VGS = 4.5 V "6.3 D TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6410DQ * Source Pins 2, 3, 6 and 7 must be tied common. G Top View

S-49534

Abstract: Si6434DQ
Contextual Info: Si6434DQ Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "5.6 0.042 @ VGS = 4.5 V "4.5 30 D TSSOP-8 D 1 S 2 S G D 8 D 7 S 3 6 S 4 5 D Si6434DQ * Source Pins 2, 3, 6 and 7 must be tied common. G Top View

Contextual Info: SN54AC11, SN74AC11 TRIPLE 3ĆINPUT POSITIVEĆAND GATES SCAS532D − AUGUST 1995 − REVISED OCTOBER 2003 D 2-V to 6-V VCC Operation D Inputs Accept Voltages to 6 V D Max tpd of 7.5 ns at 5 V 1 14 2 13 3 12 4 11 5 10 6 9 7 8 VCC 1C 1Y 3A 3B 3C 3Y 2A NC 2B NC

Si6459DQ

Contextual Info: Si6459DQ Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6459DQ G * Source Pins 2, 3, 6 and 7 must be tied common.

Si6459DQ

Contextual Info: Si6459DQ Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6459DQ G * Source Pins 2, 3, 6 and 7 must be tied common.

Si6434DQ

Contextual Info: Si6434DQ Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "5.6 0.042 @ VGS = 4.5 V "4.5 D TSSOPĆ8 D S S G 1 2 3 D 8 Si6434DQ 4 7 6 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View

Si6459DQ

Contextual Info: Si6459DQ Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6459DQ G * Source Pins 2, 3, 6 and 7 must be tied common.

Contextual Info: Si6459DQ Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 D 8 D 7 S 3 6 S 4 5 D 1 S 2 S G D Si6459DQ G * Source Pins 2, 3, 6 and 7 must be tied common.

PC3200U 30331

Abstract: PC2700U-25331-A1 pc3200u-30331 PC3200U-30331-a1 PC3200U HYS64D128320HU-5-C PC3200U 3033 PC3200U-30331-B2 PC2700U-25331-C3 PC3200
Contextual Info: September 2006 HYS64D32301HU–[5/6]–C HYS[7 2/64]D 64 3 0 0 H U– [ 5 / 6 ] – C HYS[64/72]D128320HU–[5/6]–C 184-Pin Unbuffered Double Data Rate SDRAM UDIMM DDR SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.21 Internet Data Sheet HYS[64/72]D[16/32/128]3xxHU–[5/6]–C

iC-nc

Contextual Info: MITSUBISHI Neh POWER MOSFET FS20KM-6 HIGH-SPEED SWITCHING USE FS20KM-6 OUTLINE DRAWING Dimensions in mm • V d s s .3 0 0 V • rDS ON (MAX) .0 . 2 6 0