D 317 TRANSISTOR Search Results

d 317 transistor

Abstract: E6327 Q67000-S94
Contextual Info: BSP 317 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-2.0 V Pin 1 G Type VDS ID RDS(on) Package BSP 317 -200 V -0.37 A 6Ω SOT-223 Type BSP 317 Ordering Code Q67000-S94 Pin 2 D Pin 3 Pin 4 S D Marking

G10507

Abstract: motorola LM317 LM317BD2T g1050 LM317T schematic diagram ac voltage regulator 6 pin layout for LM317 motorola LM317T
Contextual Info: Order this document by LM317/D M M O TO R O LA — LM 317 Three-Term inal A djustable Output Positive V oltage Regulator The LM317 is an adjustable 3-terminal positive voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of 1.2 V to 37 V.

Power Transisitor 100V 2A

Abstract: NJM317 CONSTANT CURRENT regulator NJM317 equivalent
Contextual Info: NJM317 ADJUSTABLE 3-T E R M IN A L POSITIVE VOLTAGE REGULATOR • GENERAL DESCRIPTION PACKAGE OUTLINE T he N JM 317 is adjustable 3 -term inal p o sitiv e v oltage re g u la to r IC. It is cap ab le o f a d ju stm en t fro m ty p ical 1.25V to 37V output voltage

Motorola transistors MRF648

Abstract: Motorola transistors MRF646 MRF648 MRF515 MRF646 MRF627 Transistor MRF630 2N5945 Motorola MRF644 MRF629
Contextual Info: RF PRODUCTS — BIPOLAR POWER TRANSISTORS continued <C^, TO-22Q 333-03 UHF Applications (continued) 317-01 407-512 MHz, UHF FM Transistors H igher po w e r o u tp u t de vice s in this U H F po w e r tra n sisto r series fe a tu re in te rna lly in p u t-m a tch e d co n stru ctio n , are de sig ned

6V1825

Abstract: 10KHZ GELM317
Contextual Info: CORPORATION ISSUED DATE :2004/07/30 REVISED DATE : GELM 317 3 - T E R M I N A L 1 A P O S I T I V E A D J U S T A B L E V O L T A G E R E G U L AT O R Description The GELM317 is an adjustable 3-termial positive voltage regulator, designed to supply more than 1.5A of

GJLM317

Contextual Info: CORPORATION ISSUED DATE :2003/07/29 REVISED DATE :2006/06/01B GJLM 317 3 - T E R M I N A L 1 . 5 A P O S I T I V E A D J U S T A B L E V O L T A G E R E G U L AT O R Description The GJLM317 is an adjustable 3-termial positive voltage regulator, designed to supply more than 1.5A of

8060 transistor

Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45
Contextual Info: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,

transistors BC 487

Abstract: 327A-16 C 337-40 transistors BC 337a c 33740 tr bc 337 C 337-25 BC 327/25 transistor transistor BC 321 C 32725
Contextual Info: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B

LE104M

Abstract: ASR75A arrestor ceramic disk capacitor Disc ceramic capacitor LC103M LC104M LC223M LC224M LC333M
Contextual Info: EIA Class 3, Semiconductor Type Disc Ceramic Capacitors GENERAL SPECIFICATIONS Reduced Titanite { Ideal in Transistorized Circuity for Bypass and Coupling Applications { Low Power Factor & Superior Radio Frequency Impedance Characteristics { Meets RS-198C for Class 3

2sc2112

Abstract: 2SA951 TA 2119 AF 138B 2SA950 Scans-00103502
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

2sa1820

Abstract: 2SA1903 2SB1425 2SC4721 2SC4720 2sa190 2SA934 2SA1818 2SA1902 2SA935
Contextual Info: T ranslstors TO -92L • TO-92LS * MRT TO-92L is a high power version o l TO-92 and T0-92LS is a sfcnmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automate placemen« machine. : iiUNtt I»0*pW« IWNffl •Product Designation

C 547 B pin configuration

Abstract: transistors BC 548 BC 558 bc 547 557 C 547 C transistors BC 546 B C 548 B BC Transistors BC 547 pnp transistors BC 548 C 547 B
Contextual Info: general purpose transistors — plastic case o transistors usage général — boîtier plastique THOMSON-CSF Characteristic» at 25°C M axim um ratings Type N PN PIMP Ptot VcEO mW (V) min zzzz zzzz zzzz / lc h21E V C E (sat) / lc/*B *T C22b Fb 1KHz max

ULN2003NA

Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
Contextual Info: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module

FD6666

Abstract: FD6666 equivalent jantx2n2920 355ML 1N5318 1N4148 JANTX 1N4148 JAN 1N5319 JANTX2N2222A JANTX2N918
Contextual Info: MILITARY APPROVED DIODES & TRANSISTORS DIODES JAN1N251 JAN1N457 JAN1N458 JAN1N459 JAN1N483B JAN-TX1N483B JAN1N485B JAN-TX1N485B JAN1N486B JAN-TX1N486B JAN1N643 JAN1N658 JAN1N662 JAN1N663 JAN1N753A JAN1N754A JAN1N755A JAN1N756A JAN1N757A JAN1N758A JAN1N759A

Contextual Info: BF 569 PNP Silicon RF Transistor 3SE D • aa3b3S0 QQ l b 7 m T hsip SIEMENS/ SPCL-, SEMICONDS • Suitable for oscillators, mixers and self-oscillating mixer stages in UHF TV tuners C Type Marking BF 569 LH Ordering code for versions In bulk Q62702-F548 Ordering code for

nec 2571

Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .

bu800

Abstract: BU500 MJ12004 2N3448 BU208A MJ16024 BU205 2N3447 mj15011 MJ8503
Contextual Info: POWER TRANSISTORS — BIPOLAR M ETAL TO-204AA Formerly TO-3 CASE 11-01, 11-3 — 40 mil pins CASE 1-04, 1-05 — 40 mil pins MODIFIED TO-3 CASE 197-01 — 60 mil pins S T Y L E 1: PIN 1. 2. CASE. BASE EM ITTER C O LLEC TO R R e sistiv e Sw itching lcCont

EB05

Contextual Info: Ce n t r a 1 TM CZT5551 Sem i c o n d u c t o r C o r p . NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high

Contextual Info: KSC5021 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING: t, = 0.1 WIDE SOA Typ TO-220 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage Collector Current (DC)

928 606 402 00

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low

Contextual Info: Power Transistors 2SB1416 2SB1416 Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SD2136 •Features • High DC current gain Iife and good linearity • Low collector-emitter saturation voltage (Vc e m )

BF936

Contextual Info: _ i _ OLE D N AUER PHILIPS/DISCRETE ^ 5 3 ^ 3 1 0012322 S BES3& T ^ 3 i- I7 SILICO N PLANAR TRANSISTOR P-N-P transistor in a TO-92 envelope intended for use in h.f. amplifiers and also in mixer and oscillator stages in v.h.f. and u.h.f. television receivers.

Contextual Info: • bb53^31 002444b EOT * A P X N AUER PHILIPS/DISCRETE b?E B C 817 B C 818 D J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic package for use in driver and output stages of audio amplifiers in thick and thin-film hybrid circuits.

mrf8372

Contextual Info: MOTOROLA Order this document by MRF837/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics