D 317 TRANSISTOR Search Results

d 317 transistor

Abstract: E6327 Q67000-S94
Contextual Info: BSP 317 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-2.0 V Pin 1 G Type VDS ID RDS(on) Package BSP 317 -200 V -0.37 A 6Ω SOT-223 Type BSP 317 Ordering Code Q67000-S94 Pin 2 D Pin 3 Pin 4 S D Marking

Power Transisitor 100V 2A

Abstract: NJM317 CONSTANT CURRENT regulator NJM317 equivalent
Contextual Info: NJM317 ADJUSTABLE 3-T E R M IN A L POSITIVE VOLTAGE REGULATOR • GENERAL DESCRIPTION PACKAGE OUTLINE T he N JM 317 is adjustable 3 -term inal p o sitiv e v oltage re g u la to r IC. It is cap ab le o f a d ju stm en t fro m ty p ical 1.25V to 37V output voltage

6V1825

Abstract: 10KHZ GELM317
Contextual Info: CORPORATION ISSUED DATE :2004/07/30 REVISED DATE : GELM 317 3 - T E R M I N A L 1 A P O S I T I V E A D J U S T A B L E V O L T A G E R E G U L AT O R Description The GELM317 is an adjustable 3-termial positive voltage regulator, designed to supply more than 1.5A of

GJLM317

Contextual Info: CORPORATION ISSUED DATE :2003/07/29 REVISED DATE :2006/06/01B GJLM 317 3 - T E R M I N A L 1 . 5 A P O S I T I V E A D J U S T A B L E V O L T A G E R E G U L AT O R Description The GJLM317 is an adjustable 3-termial positive voltage regulator, designed to supply more than 1.5A of

8060 transistor

Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45
Contextual Info: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,

transistors BC 487

Abstract: 327A-16 C 337-40 transistors BC 337a c 33740 tr bc 337 C 337-25 BC 327/25 transistor transistor BC 321 C 32725
Contextual Info: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B

2sc2112

Abstract: 2SA951 TA 2119 AF 138B 2SA950 Scans-00103502
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

2sa1820

Abstract: 2SA1903 2SB1425 2SC4721 2SC4720 2sa190 2SA934 2SA1818 2SA1902 2SA935
Contextual Info: T ranslstors TO -92L • TO-92LS * MRT TO-92L is a high power version o l TO-92 and T0-92LS is a sfcnmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automate placemen« machine. : iiUNtt I»0*pW« IWNffl •Product Designation

C 547 B pin configuration

Abstract: transistors BC 548 BC 558 bc 547 557 C 547 C transistors BC 546 B C 548 B BC Transistors BC 547 pnp transistors BC 548 C 547 B
Contextual Info: general purpose transistors — plastic case o transistors usage général — boîtier plastique THOMSON-CSF Characteristic» at 25°C M axim um ratings Type N PN PIMP Ptot VcEO mW (V) min zzzz zzzz zzzz / lc h21E V C E (sat) / lc/*B *T C22b Fb 1KHz max

nec 2571

Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .

EB05

Contextual Info: Ce n t r a 1 TM CZT5551 Sem i c o n d u c t o r C o r p . NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high

2SC2644

Abstract: 2SC264
Contextual Info: TOSHIBA 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VHF-UHF BAND WIDEBAND AMPLIFIER APPLICATIONS. 5.1 MAX. , • • • High Gain Low IMD fp = 4GHz Typ. 0.55M AX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

ir 319

Abstract: BFS55A ir319
Contextual Info: IMP N -S iliz iu m -B re itb a n d tra n s isto r B F S 55A B F S 5 5 A ist ein N PN -Silizium -H F-Transistor im Gehäuse 18 A 4 D IN 41 8 7 6 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist besonders für H F -A n w e n dungen bis in den GH z-Bereich geeignet. z.B. in Antennenverstärkern sow ie für Radar-ZFVerstärker und Satellitentechnik.

IC SEM 2105

Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

Contextual Info: HOE D ROHM CO LTD n □ □ □ ¿ b lS S BBRHM 2SB1306/2SB1307M/2SB1326/2SB1386 /T ra n s is to rs 7^27-21 S B 1 3 S / 2 S B 1 3 7 2 S 3 1 3 2 3 / 2 5 3 1 3 S S 7 tl7 - Z IV 3 VhJJVSVvJI-r 2 m m m t i m m m / L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistors

BUZ54

Contextual Info: SIEMENS SIPMOS Power Transistors BUZ 54 • N channel • Enhancement mode • Avalanche-rated VOTOSI 52 Type v DS ^DS on Package 1> Ordering Code BUZ 54 1000 V 5.1 A 2.0 £2 TO-204 AA C67078-S1010-A2 BUZ 54 A 1000 V 4.5 A 2.6 Q TO-204 AA C67078-S1010-A3

Contextual Info: LM317 3-Terminal Adjustable Output Positive Voltage Regulators Semiconductor [t h r e e -t e r m i n a l a d ju s t a b l e o u t p u t p o s it iv e v o l t a g e r e g u l a t o r s he LM317 is adjustable 3-terminal positive voltage external resistors to set the output voltage. Further,

bc 471

Abstract: IC 415 BC 241 bc 415 c BC415 BC416C bc 188 BC415B Bc 188 pnp IR LFN
Contextual Info: SIE T> SIEM ENS m 023SbGS □□ms'îe S3B « s i e g SIEMENS AKTIENGESELLSCHAF PNP Sil icon AF Transistors • • • • BC 415 BC 416 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 413, BC 414 NPN

Contextual Info: ta n a a i DDi7 ¿ m DOT MITSUBISHI SEMICONDUCTOR <GaAs FET> • M G F4910E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: GaAs IRED S PHOTO-TRANSISTOR T L P 6 2 1 , - 2 , - 4 Unit in mm PROGRAMMABLE CONTROLLER AC/DC-INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP621, -2 and -4 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP621-2 offers two isolated channels in

Lautsprecher LP

Abstract: transistor DA3 307 rft lautsprecher Langwelle Scans-048 26pOL rft tgl rft relais DSAGER0002 DSAGER00028
Contextual Info: T E C H N I S C H E DO KU MEN TA TI ON Progrom m geberleil Pr T 801 Z.Nr 8721BOI—00001 . . 1 2 Bestückung und Zubehör t 1* 2.1 Beatüokung des Pr-T 801 01 (von oben linke)» Funktion 1.2.1.1. 1.2.1.2. 1.2.1*3* 1.2.1.4. 1.2.1*5. 1.2*1»S. 1.2.1.7. 1.2.1.8.

C 331 Transistor

Abstract: transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331
Contextual Info: LINEAR INTEGRATED CIRCUIT TBA 331 GENERAL PURPOSE The TBA 331 is an assembly of 5 silicon NPN transistors on a common monolithic substrate In a Jedec TO-116 14-lead dual in-line plastic package. Two transistors are internally connected to form a differential amplifier.

340G-02

Abstract: Y25N120 GY25N120 motorola transistor m 237
Contextual Info: MOTOROLA Order this document by MGY25N 120/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet M GY25N120 Insulated G ate Bipolar Transistor N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage

AC INRUSH CURRENT 1000A LIMITER

Abstract: KLH Series littelfuse l50s L15S L25S L50S L60S L70S LR29862 UL 248-14
Contextual Info: Next Semiconductor Fuses 150/250/500/600/700 VAC • Very Fast-Acting ■ 1 – 1000 Amperes SPECIFICATIONS Voltage Ratings: L15S: 150 V AC/DC 1 – 60A 150 VAC (70 – 1000A) 100 VDC (70 – 1000A) L25S: 250 V AC/DC (1 – 200A) 250 VAC (225 – 800A) 200 VDC (225 – 800A)