D 25 N 12 Search Results

2743037447

Abstract: 2744555577 2773019447 2773021447 PO 118 2743019447 2744044447 2744555567
Contextual Info: 49 15th E d itio n S M B e a d s D iffe re n tia l-M o d e Lower Frequencies < 50 MHz (73 material) Part Number Typical impedanceCi) 1 MHZ 5 MHz 10 MHz* 25 MHZ* Max Rdc<m-4 2773019447 12 25 31 40 OS 2773021447 25 50 60 78 12 2773037447 25 50 60 78 12 2773044447

transistor ESM 30

Abstract: 80fiV transistor ESM ESM25 C12S dss2 ESM25A L1T voltage C12SS amplificateur BF
Contextual Info: *ESM 25 *ESM25A D U AL FIELD -EFFECT TRANSISTORS, SILICON. N C H A N N EL DOUBLES TRANSISTORS A E F F E T D E CHAMP, SILICIUM. CANAL N 5ji Preferred device D isp o sitif recommandé - L F amplification Amplification BF 25 mV max. V GS1'V GS2 120 mV max.

SPP80P06PIN-ND

Abstract: BSS84P-L6327 BSS138N-L6327 IPD06N03LAG BSC042N03LSG IPD060N03LG BSS138N L6327 BSS123L6327 BSS138N SPP15P10PIN-ND
Contextual Info: Mosfets Cont. OptiMOS 2 Package Type ® Vds (V) TO-220AB N-CH 25 30 TO-220 N-CH 100 600 TO-220-3 N-CH 100 TO-251 N-CH 25 TO-262AB N-CH 25 D2-PAK N-CH 25 25 TO-252 N-CH 30 D-PAK N-CH 25 Bent up Leads DSO-8 N-CH 30 SUPERSO8 N-CH 30 25 TDSON-8 N-CH 30 25

Contextual Info: Connector module design N Female connector 3 special contacts 25 mm extension module Fe m a le c o n n e c to r m o d u le d e sig n N Fig. 48 Dimension drawings and board hole pattern raering intorniai - V ^ ttt////777777p. i 25 max -EC —EC p r~Vi 1U 12.25

DIODE DO-220

Contextual Info: S-THOMSON QGDEbtiB . . O 1H0MS0N-CSF DIVISION SEM IC O N D U C T EU R S 59C Dt - h 02663 zs BZW 25 -12, B— BZW 25 -120, B _ U N I - A N D B ID IR E C T IO N A L T R A N S IE N T V O LT A G E S U P P R E S S O R S D IO D E S D E PR O T ECT IO N U N I - ET B ID IR E C T IO N N E LLE S

SCR TAG Semiconductors

Abstract: TAG scr RD101 scr 6A T1010MH SCR 10A L0100BV L0100DV TRIAC TAG J light activated scr
Contextual Info: part N um ber D e fin itio n t a g s e m ic o n d u c t o r s l t d E x a m p le T 1 010M H : T = Glass passivated Triac 10= 10A 10= Ig T 25/25/25/25 mA M = 600 V H = TQ-220 T e c h n o lo g y C u rre n t R a n g e | Q T -C u rre n t R a n g e V o lt a g e

Contextual Info: MINIATURE TEST PROBES MINIATURE TEST PROBE TO BANANA PLUG 795-2668-10-25 Black 795-2668-12-25 Red S pecify C o lo r 48 IN.5 0 - „.5 8 Dia .28 D ia. W IR E - 20 A W G , tin n e d , PVC insulated. 1st E N D — N y lo n insulated m in ia tu re test probe. N ickel plated brass chuck.

scr types

Abstract: C220-2 GE C220B Thyristor C220 A c15d ge c15c C122D SCR thyristor GE type C2202 C126A 2N1770
Contextual Info: GETYPE JEDEC C10 C11 C15 C 116 2N1770A77A 2N1770-78 - - 25-400 25-600 25-600 C l 22-3* C220-2 C126 C36 C37 - - 2 N 1842-50 - 25-600 25 600 25-600 25-800 j I E L E C T R IC A L S P E C IF IC A T IO N S | VO LTAG E RANGE i 50-600 25-600 { F O R W A R D C O N D U C T IO N

EUPEC TT25

Abstract: powerblock tt 93 tt 25 n powerblock EUPEC tt 93 n 14 EUPEC powerblock TD EUPEC powerblock TT25 EUPEC tt 162 n 16 EUPEC tt 93 n powerblock td 162 DT25
Contextual Info: b lE EUPEC D 3M03217 ODOlOHb 5 11 IUPEC r 25 N, TD 25 N, DT 25 N Elektrische Eigenschaften Electrical properties H öchstzu lässige Werte M axim um rated values Perio d ische Vorwärts- und R ückw ärts-Spitzensp errspann ung repetitive peak forward off-state

skm 152 ga

Abstract: skm 3s semikron skm 152 ga skm 152
Contextual Info: sE M I K R O n Absolute Maximum Ratings S ym bol C o n d itio n s 11 VcES VCGR lc ICM V ges Rge = 20 ki.2 Tcase —25/80 °C Tcase = 25/80 °C P to t per IGBT. Tease = 25 °C Tj, Tstg Visol humidity climate Values . 102 D 122 D 1000 1200 1000 1200 400/300

SD-51338-004

Abstract: connector TFM SD 338 513380874 5L33
Contextual Info: 10 -H Z ] B ( 1.7 5 ) i i n D D n n n n n D D E i D n n D D n n~ii _L 1 MMMMMMMMMMMMMMMMMMMM f T ^ y w + - n m r i ^ ^ p t o (3.4) SECT F IT T IN G hU — h TRADE 7- ^ 7 NAI 25 .5 23.6 27. 51338-1274 5 3 3 8 - 209 20 21.5 19.6 23.1 51338-1074 51338-1009

U430

Abstract: U431 Jfet U431
Contextual Info: U430/431 Siliconix Matched NĆChannel JFET Pairs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) U430 -1 to -4 -25 10 -15 25 U431 -2 to -6 -25 10 -15 25 jVGS1 - VGS2j Typ (mV) Features Benefits Applications D D D D D D D

Contextual Info: 74075 ITEM 25 GROUND M ATERIAL H 74051-0025 BP HOUSING, 8 ROW, 25 COLU M N, O P E N - E N D E D 1 2 74056-1527 GROUND S H IE L D 8 ROW 25 o 74054-3527 M ED IU M S I G N A L 4.75mm PIN A 74054-2527 S H ORT S I G N A L (4.25mm) PIN • 74054-1527 LONG S I G N A L

Contextual Info: MP3274 DIE Complete 32 Channel, 12-Bit Data Acquisition Subsystem CMOS Die Specifications _ E 3 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings TA = 25°C V c c to D G N D . V EE to D G N D .

15326942

Contextual Info: 280 GT Series SE AL SE AL N E U D D U E U N Unsealed System Application Information 280 SERIES TERMINALS – Tin Plated TEMPERATURE RISE ABOVE o AMBIENT 25 C VS CURRENT* TEMP RANGE C: O RESISTANCE: . 0-25 . -40 to 125 . <10mΩ@20mV

F0810MH

Abstract: E0102YG F0810NH E0102YA E0102AB E0102AA TAG RD101 SCR TAG Semiconductors scr tag 2 200 SCR 10A
Contextual Info: part Num ber D efinition ta g s e m ic o n d u c to r s l t d Exam ple T1010MH: T = Glass passivated Triac 10= 10A 10= Ig T 25/25/25/25 mA M = 600 V H = TQ-220 T ech n olo gy C u rre n t R ange |Q T -C u rre n t R ang e V o lta g e P ac ka g e SCR 01 = up to 1A

BAT31

Abstract: microwave varactor diode x band varactor diode 1N4885 varactor ghz BAY96 varactor diode capacitance range SOD-31 Diode BAY96 BXY56
Contextual Info: Microwave solid state book 1 part 8 D e s c r ip tio n D ra w in g re fe re n ce T ype No. O u tlin e multiplier varactor diodes 25 6 55 N 1 .5 6 45 1 0 0 m in . S O D -3 1 N 1 .0 6 25 120 S O D -3 1 N 0 .7 5 6 20 150 150 9 5 3 1.6 1 .0 0 .6 5 0 .4 6 6 6 6

Contextual Info: SUD25N04-25 New Product Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 25 0.040 @ VGS = 4.5 V 20 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD25N04-25 S N-Channel MOSFET

Contextual Info: SUD25N04-25 New Product Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 25 0.040 @ VGS = 4.5 V 20 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD25N04-25 S N-Channel MOSFET

Contextual Info: R@25 C = 1 0 K D H M + / - 1 Z N T C = ~ 4 , 4%/C CURVE Z LEADS= 22 AWG PVC Tw isted P a i r , 30 0V P / N ! Q T 0 1 0 0 2 - 0 7 8 - " X" 25 0" □ , Dt HOUSING ! QT MDL D- HVA C Notes ! 25" Insert For STRIP "L" 1 — G Leads - 2 = 12" L e a d s -3 = 24" DRAWING

SMP50N06-25

Abstract: v13010 z570
Contextual Info: Tem ic SMP50N06-25 Siliconix N-Channel Enhancement-Mode MOSFET, 25-mQ ros on 175 °C Maximum Junction Temperature Product Summary V(BR)DSS (V) r DS(on) ( ß ) I d (A) 60 0.025 46 D O TO-220AB o -im D R A IN co n n ected to TAB G D S Top V iew N -C h an n el M O S F E T

1NU7

Abstract: 1N2487 1N1492 1N2508 IN400T 1N1711 equivalent to 1N4001 1N1490 1N2484 1N20B2
Contextual Info: 386 9 7 2 0 GENERAL ~fiï 86D 0 0 3 1 7 DIODE CORP Ï Ë 3öbT?2Q 0D00317 h LE A D M O U N T ED SILICO N POW ER RECTIFIERS P' TYPE y \ % D t -° -a cont'd \ \ r1' | t IH > % 'S 1, •e 25 @ 25 1@ 25 25 @ 25 > 1@ 25 IN 599 1N599A 1N600 1N600A Oo-l Do-1 Oo-l

Contextual Info: Technical Specification IQ24xxxQEXxx 5-50 V Continuous Input Outputs 50V 300W 2250V dc Quarter-brick Isolation DC-DC Converter Transient Input Max Power a pu d bl va ic n at ce io d n 18-36 V A 25 @ UT V O 12 IN 24 IQ 24 12 0Q EC 25 N RA -G The InQor Quarter-brick converter series is composed

S25A05

Abstract: S25A1 S25A10 S25A2 S25A3 S25A4 S25A5 S25A6 S25A8 S40A05
Contextual Info: SEMICON COMPONENTS INC 2SE D • A135157 DDD0B3fi 4 M OJ STUD BASE RECTIFIERS DO-5 CASE lQ RATINGS TO 60.0 AMPS TYPE TEMP CURRENT °C AMPERES *o TEMP AMPS <*0 JiA 25 25 25 25 25 145 145 145 145 145 2000 2000 2000 2000 2000 100 100 100 100 100 N/A N/A N/A