D 25 N 12 Search Results

2743037447

Abstract: 2744555577 2773019447 2773021447 PO 118 2743019447 2744044447 2744555567
Contextual Info: 49 15th E d itio n S M B e a d s D iffe re n tia l-M o d e Lower Frequencies < 50 MHz (73 material) Part Number Typical impedanceCi) 1 MHZ 5 MHz 10 MHz* 25 MHZ* Max Rdc<m-4 2773019447 12 25 31 40 OS 2773021447 25 50 60 78 12 2773037447 25 50 60 78 12 2773044447

transistor ESM 30

Abstract: 80fiV transistor ESM ESM25 C12S dss2 ESM25A L1T voltage C12SS amplificateur BF
Contextual Info: *ESM 25 *ESM25A D U AL FIELD -EFFECT TRANSISTORS, SILICON. N C H A N N EL DOUBLES TRANSISTORS A E F F E T D E CHAMP, SILICIUM. CANAL N 5ji Preferred device D isp o sitif recommandé - L F amplification Amplification BF 25 mV max. V GS1'V GS2 120 mV max.

SCR TAG Semiconductors

Abstract: TAG scr RD101 scr 6A T1010MH SCR 10A L0100BV L0100DV TRIAC TAG J light activated scr
Contextual Info: part N um ber D e fin itio n t a g s e m ic o n d u c t o r s l t d E x a m p le T 1 010M H : T = Glass passivated Triac 10= 10A 10= Ig T 25/25/25/25 mA M = 600 V H = TQ-220 T e c h n o lo g y C u rre n t R a n g e | Q T -C u rre n t R a n g e V o lt a g e

scr types

Abstract: C220-2 GE C220B Thyristor C220 A c15d ge c15c C122D SCR thyristor GE type C2202 C126A 2N1770
Contextual Info: GETYPE JEDEC C10 C11 C15 C 116 2N1770A77A 2N1770-78 - - 25-400 25-600 25-600 C l 22-3* C220-2 C126 C36 C37 - - 2 N 1842-50 - 25-600 25 600 25-600 25-800 j I E L E C T R IC A L S P E C IF IC A T IO N S | VO LTAG E RANGE i 50-600 25-600 { F O R W A R D C O N D U C T IO N

U430

Abstract: U431 Jfet U431
Contextual Info: U430/431 Siliconix Matched NĆChannel JFET Pairs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) U430 -1 to -4 -25 10 -15 25 U431 -2 to -6 -25 10 -15 25 jVGS1 - VGS2j Typ (mV) Features Benefits Applications D D D D D D D

Contextual Info: BDATEL INNOVATION and EXCELLENCE T f i n n /D C C o n v e * I M P MO D E L S ter P-5/5-12/1-D48 m a d e in u s a Triple Output High-Efficiency, Smaller-Package 25-40 Watt, DC/DC Converters DATEUs new T M P Models are fully potted, 25-40 Watt, triple-output DC/DC

F0810MH

Abstract: E0102YG F0810NH E0102YA E0102AB E0102AA TAG RD101 SCR TAG Semiconductors scr tag 2 200 SCR 10A
Contextual Info: part Num ber D efinition ta g s e m ic o n d u c to r s l t d Exam ple T1010MH: T = Glass passivated Triac 10= 10A 10= Ig T 25/25/25/25 mA M = 600 V H = TQ-220 T ech n olo gy C u rre n t R ange |Q T -C u rre n t R ang e V o lta g e P ac ka g e SCR 01 = up to 1A

BAT31

Abstract: microwave varactor diode x band varactor diode 1N4885 varactor ghz BAY96 varactor diode capacitance range SOD-31 Diode BAY96 BXY56
Contextual Info: Microwave solid state book 1 part 8 D e s c r ip tio n D ra w in g re fe re n ce T ype No. O u tlin e multiplier varactor diodes 25 6 55 N 1 .5 6 45 1 0 0 m in . S O D -3 1 N 1 .0 6 25 120 S O D -3 1 N 0 .7 5 6 20 150 150 9 5 3 1.6 1 .0 0 .6 5 0 .4 6 6 6 6

Contextual Info: SUD25N04-25 New Product Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 25 0.040 @ VGS = 4.5 V 20 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD25N04-25 S N-Channel MOSFET

SMP50N06-25

Abstract: v13010 z570
Contextual Info: Tem ic SMP50N06-25 Siliconix N-Channel Enhancement-Mode MOSFET, 25-mQ ros on 175 °C Maximum Junction Temperature Product Summary V(BR)DSS (V) r DS(on) ( ß ) I d (A) 60 0.025 46 D O TO-220AB o -im D R A IN co n n ected to TAB G D S Top V iew N -C h an n el M O S F E T

Contextual Info: Technical Specification IQ24xxxQEXxx 5-50 V Continuous Input Outputs 50V 300W 2250V dc Quarter-brick Isolation DC-DC Converter Transient Input Max Power a pu d bl va ic n at ce io d n 18-36 V A 25 @ UT V O 12 IN 24 IQ 24 12 0Q EC 25 N RA -G The InQor Quarter-brick converter series is composed

Contextual Info: D R A W I N G No.: Customer Information Sheet I G 12 5 - F C X X X 0 5 L 0 -XX XXL CONTACT IF IN D O U B T - ASK ÇQ | N OT T O S C A L E THIRD ANGLE PROJECTION A LL D I M E N S I O N S IN m m No.I I .25 TYP DIM 'B' I .25 SECTION SEE O R D E R X-X CODE FOR G A U G E

SMP25N05-45L

Contextual Info: Tem ic SMP25N05-45L Siliconix N-Chaniiel Enhancement-Mode Transistor, Logic Level 175 °C Maximum Junction Temperature Product Summary Jd IA 0.045 @ V qs = 10 V 25 0.060 @ VGS = 4.25 V 25 50 D O TO-220AB o .►JE D rain C o n n e c ted to Tab G D S Top View

DT25N

Abstract: tt 25 n powerblock
Contextual Info: blE D EUPEC BMGBSI? OGÜiaHb S U «IIPEC TT 25 N, TD 25 N, DT 25 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte M axim um rated values Periodische Vorw ärts- und R ückw ärts-Spitzensperrspannung repetitive peak forward off-state

SUD25N04-25

Contextual Info: SUD25N04-25 Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 25 0.040 @ VGS = 4.5 V 20 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD25N04-25 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: FILTERED " D " C O N N E C T O R S m u R n tn C U B L09 & 2 5 SERIES EMI SUPPRESSION D-CONNECTOR -C U B L25 SERIES SPECIFICATIONS PART NUMBERING SYSTEM CUBL 25 P T T N T 25 Connector Type -— I Number ol Lines - ' 9 Lines

Contextual Info: Mbôb22b DÜ0n4S 5bl « I X Y □IXYS V10500-12S Advanced Technical Information Hybrid IGBT Power Modules S ym b o l v CES C o n d itio n M ax. R ating 1200 V ±30 V T s = 25°C 1 600 A T s = 65°C 500 A 1200 A T s = 25°C 430 A T S = 25°C , 1ms 860 A 2500

acrian RF POWER TRANSISTOR

Abstract: z3 transistor TRIMMER capacitor 5-60 pF Scans-00115662
Contextual Info: 0182998 ACRIAN INC T? DE lOlñSTTfl DOOlOflS 5 | ~ D m w m G EN ER A L 0912-25 D E SC R IP TIO N 25 WATTS - 50 VOLTS 960-1215 MHz The 0912-25 is an internally matched, common base transistor providing 25 watts of pulsed RF output power across the 960-1215 MHz bandwidth. This hermetically

Contextual Info: SPRAGUE/SEF1IC0ND CROUP 8514019 SPRAG U E! 1H D • SS13fiS0 0003530 5 ■ S E M IC O N D S / I C S 93D 03580 3>T -2?-25 _ JUNCTION FIELD-EFFECT TRA N SISTO R C H IP S N-Channel JFETs ELECTRICAL CHARACTERISTICS atTA =

AD9012AQ

Abstract: AD9028J AN8124K CXD1179Q CXD2300Q HA19217MP MB40568
Contextual Info: - # 8 m 221 t' y h 3 Ê ? |JJ£ $ M A - D 3 V MB40568 & HA19217MP AD9012AQ, BQ AD9028J, K AN8124K CXD1179Q CXD2300Q / — il S ± il B Í A n a lo g D e v ic e s A n alog D e v ic e s f ô T S Ï V - - 7 ;- m SBimStî TFS +25' C TFS +25' C + 2 5 'C 25"C 25”C

1N1733A

Abstract: 1N1731A 1N173 1N1730A
Contextual Info: ED AL INDUSTRIES INC M5E D BQRSTlb 0000261 270 « E D L T'Of-oÿ •it BL pjy • SEE CHART .0 5 amps I ' 175 @ ' _ AMPS SEE CHART V @ 1 u amp @ 12 u amps STYLE STAMP PIV @ 25 25 PIV @ 150 ,k amp @ O, o, Algd EDAL,' P/N EXCEPT' EQUIV. TO. • P/N -1N1730A

Contextual Info: 2 A 3 4 5 6 7 Pos i t i o n _ 25 position 7, 25 ±0,05 3 A +0,1 3 >k -fl Re i he row Re i he row B B B B B B B B D 1D D 1D D 1D D 1D D 1D D 1D D X U n ln U n ln U n ln 7 7 _ _ 24x 2 =48 ln \ 11,35 ±0,05 iIFIF i i iI ii Ififif ii ififIf ii ifif If ii ii If 11 , mi

Contextual Info: DATE DRAWN JAN.-25-‘ 07 CHECKED JAN.-25-‘ 07 CHECKED JAN.-25-‘ 07 NAME APPROVED DWG.NO. T h i s m a t er i a l a n d t h e in f or m at i o n h e r ei n i s th e pr o pe r ty o f Fuji Electric D e v i c e Te c h n o lo g y C o . , L td . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,

FUJI DATE CODE

Contextual Info: DATE DRAWN JAN.-25-‘ 07 CHECKED JAN.-25-‘ 07 CHECKED JAN.-25-‘ 07 NAME APPROVED DWG.NO. T h i s m a t er i a l a n d t h e in f or m at i o n h e r ei n i s th e pr o pe r ty o f Fuji Electric D e v i c e Te c h n o lo g y C o . , L td . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,