2743019447 Search Results

Contextual Info: Fair-Rite Product's Catalog Part Data Sheet, 2743019447 Printed: 2013-07-03 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2743019447 Frequency Range: Broadband Frequencies 25-300 MHz (43 & 44 materials)

Contextual Info: Fair-Rite Product's Catalog Part Data Sheet, 2743019447 Printed: 2014-06-11 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2743019447 Frequency Range: Broadband Frequencies 25-300 MHz (43 & 44 materials)

2743019447 fair-rite

Contextual Info: Fair-Rite Product's Catalog Part Data Sheet, 2743019447 Printed: 2009-01-16 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2743019447 Frequency Range: Broadband Frequencies 25-300 MHz (43 & 44 materials)

Contextual Info: Fair-Rite Catalog 2743019447LF | Page 1 of 6 Products Catalog Part Search: Technical Abo 2643168351 Lower & Broadband Frequencies 1-300 MHz 31 material Broadband Frequencies 25-300 MHz (43 material) Part Number: 2643168351 Frequency Range: Broadband Frequencies 25-300 MHz (43 material)

2743019447

Contextual Info: Fair-Rite Products Corp. Catalog Page 1 of 3 Products Technical About Us Contact Us Catalog Part Search: Part Number: 2743019447 Frequency Range: Broadband Frequencies 25-300 MHz 43 & 44 materials Description: BDS2.9/3.1/4.7-43-1 43 SM BEAD Application:

2743019447

Contextual Info: Fair-Rite Product's Catalog Part Data Sheet, 2743019447 Printed: 2010-11-09 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2743019447 Frequency Range: Broadband Frequencies 25-300 MHz (43 & 44 materials)

AGR19045XF

Contextual Info: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

TH 2190 HOT Transistor

Contextual Info: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

square d LC circuit breaker curves

Abstract: MIC2590B MIC2590B-2BTQ MIC2590B-5BTQ
Contextual Info: MIC2590B Dual-Slot PCI Hot Plug Controller General Description Features The MIC2590B is a power controller supporting power distribution requirements for Peripheral Component Interconnect PCI hot plug compliant systems incorporating the Intelligent Platform Management Interface (IPMI). The

6603 Shenzhen

Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
Contextual Info: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

J593

Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
Contextual Info: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

transistor 7350

Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
Contextual Info: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR

e140 transformer

Abstract: transformer E166 e141 transformer toshiba e225 Transformer E140 Fairchild E212 ADP3330ART-3.3 E212 transistor AD10242 AD10465
Contextual Info: a Dual Channel, 14-Bit, 65 MSPS A/D Converter with Analog Input Signal Conditioning AD10465 FEATURES Dual, 65 MSPS Minimum Sample Rate Channel-to-Channel Matching, ؎0.5% Gain Error Channel-to-Channel Isolation, >90 dB DC-Coupled Signal Conditioning Included

motorola MOSFET 935

Abstract: XRF184 MRF184 MRF184S 173 MHz RF CHIP
Contextual Info: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

G2225X7R225KT3AB

Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.

Z9 TRANSISTOR SMD

Abstract: AGR18045E JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8
Contextual Info: Preliminary Data Sheet November 2004 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

mosfet j172

Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

ICS5342

Contextual Info: ICS5342 GENDAC 16-Bit Integrated Clock-LUT-DAC General Description Features The ICS5342 GENDAC is a combination of dual programmable clock generators, a 256 x 18-bit RAM, and a triple 8-bit video DAC. The GENDAC supports 8-bit pseudo color applications, as well as 15-bit, 16-bit, and 24-bit True Color bypass

SD3932

Abstract: pF CAPACITOR 100v 700B
Contextual Info: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC

pal22v10h

Abstract: MM74HC245AWM 96F8740 PCC473BCTND MC68340 PM4314 PM4388 PM6344 PM7364 PM7375
Contextual Info: PM4388 TOCTL PRELIMINARY INFORMATION REFERENCE DESIGN PMC-980942 ISSUE 1 CABGA TOCTL WITH FREEDM-32 REFERENCE DESIGN PM4388 CABGA TOCTL WITH FREEDM-32 REFERENCE DESIGN PRELIMINARY INFORMATION ISSUE 1: SEPT 1998 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE

2743037447

Abstract: 2744555577 2773019447 2773021447 PO 118 2743019447 2744044447 2744555567
Contextual Info: 49 15th E d itio n S M B e a d s D iffe re n tia l-M o d e Lower Frequencies < 50 MHz (73 material) Part Number Typical impedanceCi) 1 MHZ 5 MHz 10 MHz* 25 MHZ* Max Rdc<m-4 2773019447 12 25 31 40 OS 2773021447 25 50 60 78 12 2773037447 25 50 60 78 12 2773044447